KR101002371B1 - 임피던스 매치 네트워크 및 네트워크 어셈블리를 제공하는 방법 및 시스템 - Google Patents
임피던스 매치 네트워크 및 네트워크 어셈블리를 제공하는 방법 및 시스템 Download PDFInfo
- Publication number
- KR101002371B1 KR101002371B1 KR1020057015699A KR20057015699A KR101002371B1 KR 101002371 B1 KR101002371 B1 KR 101002371B1 KR 1020057015699 A KR1020057015699 A KR 1020057015699A KR 20057015699 A KR20057015699 A KR 20057015699A KR 101002371 B1 KR101002371 B1 KR 101002371B1
- Authority
- KR
- South Korea
- Prior art keywords
- match network
- inductive elements
- variable inductive
- radio frequency
- magnetic core
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Coils Or Transformers For Communication (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US44954303P | 2003-02-25 | 2003-02-25 | |
| US60/449,543 | 2003-02-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20060015465A KR20060015465A (ko) | 2006-02-17 |
| KR101002371B1 true KR101002371B1 (ko) | 2010-12-17 |
Family
ID=32927532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020057015699A Expired - Fee Related KR101002371B1 (ko) | 2003-02-25 | 2004-02-20 | 임피던스 매치 네트워크 및 네트워크 어셈블리를 제공하는 방법 및 시스템 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7212078B2 (enExample) |
| JP (1) | JP2006521725A (enExample) |
| KR (1) | KR101002371B1 (enExample) |
| WO (1) | WO2004077894A2 (enExample) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7264676B2 (en) * | 2003-09-11 | 2007-09-04 | United Microelectronics Corp. | Plasma apparatus and method capable of adaptive impedance matching |
| CN100362619C (zh) * | 2005-08-05 | 2008-01-16 | 中微半导体设备(上海)有限公司 | 真空反应室的射频匹配耦合网络及其配置方法 |
| JP4943879B2 (ja) * | 2007-01-31 | 2012-05-30 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| GB2492168A (en) * | 2011-06-24 | 2012-12-26 | Penny & Giles Controls Ltd | Inductive position sensor with datum adjustment |
| US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
| KR102432150B1 (ko) * | 2014-08-15 | 2022-08-11 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마 프로세싱 시스템들을 위한 소형의 구성 가능한 모듈형 무선 주파수 매칭 네트워크 조립체 |
| US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
| US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
| US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
| US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
| US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
| ES2814004T3 (es) | 2016-08-09 | 2021-03-25 | John Bean Technologies Corp | Aparato y procedimiento de procesamiento de radiofrecuencia |
| US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
| US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
| US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
| US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
| US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
| JP7176860B6 (ja) | 2017-05-17 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | 前駆体の流れを改善する半導体処理チャンバ |
| US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
| US10715095B2 (en) * | 2017-10-06 | 2020-07-14 | Lam Research Corporation | Radiofrequency (RF) filter for multi-frequency RF bias |
| US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
| US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
| US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
| US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
| US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
| US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
| JP6846387B2 (ja) * | 2018-06-22 | 2021-03-24 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US10622972B2 (en) * | 2018-09-10 | 2020-04-14 | Advanced Energy Industries, Inc. | Variable capacitor bank |
| US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
| US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
| US11062887B2 (en) * | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
| US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
| US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
| US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
| US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
| US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
| US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
| US11158488B2 (en) * | 2019-06-26 | 2021-10-26 | Mks Instruments, Inc. | High speed synchronization of plasma source/bias power delivery |
| CN115004331A (zh) * | 2020-01-30 | 2022-09-02 | 朗姆研究公司 | 具有细长rf带的阻抗匹配器 |
| US11348761B2 (en) * | 2020-09-04 | 2022-05-31 | Tokyo Electron Limited | Impedance matching apparatus and control method |
| JP2022067569A (ja) * | 2020-10-20 | 2022-05-06 | パナソニックIpマネジメント株式会社 | プラズマ処理装置 |
| US12020902B2 (en) | 2022-07-14 | 2024-06-25 | Tokyo Electron Limited | Plasma processing with broadband RF waveforms |
| US12284747B2 (en) * | 2023-03-07 | 2025-04-22 | Finesse Technology Co., Ltd. | Hollow cathode discharge assistant transformer coupled plasma source and operation method of the same |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1911980A (en) * | 1932-03-31 | 1933-05-30 | Gen Electric | Variable inductor |
| FR2133211A5 (enExample) * | 1971-04-13 | 1972-11-24 | Thomson Csf | |
| US4362632A (en) * | 1974-08-02 | 1982-12-07 | Lfe Corporation | Gas discharge apparatus |
| FR2350672A1 (fr) | 1976-05-05 | 1977-12-02 | Lignes Telegraph Telephon | Procede de fabrication de noyaux magnetiques en ferrite |
| US4441092A (en) * | 1982-05-03 | 1984-04-03 | Rockwell International Corporation | Variable inductance with variable pickoff and variable flux medium permeability |
| US4673589A (en) * | 1986-02-18 | 1987-06-16 | Amoco Corporation | Photoconducting amorphous carbon |
| US5315611A (en) * | 1986-09-25 | 1994-05-24 | The United States Of America As Represented By The United States Department Of Energy | High average power magnetic modulator for metal vapor lasers |
| JPH0319305A (ja) | 1989-06-16 | 1991-01-28 | Fujitsu Ltd | 可変インダクタ |
| US4951009A (en) * | 1989-08-11 | 1990-08-21 | Applied Materials, Inc. | Tuning method and control system for automatic matching network |
| US5392018A (en) * | 1991-06-27 | 1995-02-21 | Applied Materials, Inc. | Electronically tuned matching networks using adjustable inductance elements and resonant tank circuits |
| US5309063A (en) * | 1993-03-04 | 1994-05-03 | David Sarnoff Research Center, Inc. | Inductive coil for inductively coupled plasma production apparatus |
| US5537004A (en) * | 1993-03-06 | 1996-07-16 | Tokyo Electron Limited | Low frequency electron cyclotron resonance plasma processor |
| JPH0799351A (ja) * | 1993-06-14 | 1995-04-11 | Mitsubishi Electric Corp | プラズマ装置 |
| JP3210207B2 (ja) * | 1994-04-20 | 2001-09-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JPH0818309A (ja) * | 1994-06-27 | 1996-01-19 | Advantest Corp | Yigデバイス用励磁器 |
| US5473291A (en) * | 1994-11-16 | 1995-12-05 | Brounley Associates, Inc. | Solid state plasma chamber tuner |
| JP2817647B2 (ja) * | 1995-02-02 | 1998-10-30 | 日本電気株式会社 | 可変インダクタンス素子 |
| US5710486A (en) * | 1995-05-08 | 1998-01-20 | Applied Materials, Inc. | Inductively and multi-capacitively coupled plasma reactor |
| US5656123A (en) * | 1995-06-07 | 1997-08-12 | Varian Associates, Inc. | Dual-frequency capacitively-coupled plasma reactor for materials processing |
| US5767628A (en) * | 1995-12-20 | 1998-06-16 | International Business Machines Corporation | Helicon plasma processing tool utilizing a ferromagnetic induction coil with an internal cooling channel |
| US6095084A (en) * | 1996-02-02 | 2000-08-01 | Applied Materials, Inc. | High density plasma process chamber |
| US6252354B1 (en) * | 1996-11-04 | 2001-06-26 | Applied Materials, Inc. | RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control |
| US5889252A (en) * | 1996-12-19 | 1999-03-30 | Lam Research Corporation | Method of and apparatus for independently controlling electric parameters of an impedance matching network |
| US6652717B1 (en) | 1997-05-16 | 2003-11-25 | Applied Materials, Inc. | Use of variable impedance to control coil sputter distribution |
| US6579426B1 (en) * | 1997-05-16 | 2003-06-17 | Applied Materials, Inc. | Use of variable impedance to control coil sputter distribution |
| US6178920B1 (en) * | 1997-06-05 | 2001-01-30 | Applied Materials, Inc. | Plasma reactor with internal inductive antenna capable of generating helicon wave |
| US6375810B2 (en) * | 1997-08-07 | 2002-04-23 | Applied Materials, Inc. | Plasma vapor deposition with coil sputtering |
| US5842154A (en) * | 1997-09-15 | 1998-11-24 | Eni Technologies, Inc. | Fuzzy logic tuning of RF matching network |
| US6028394A (en) * | 1998-03-24 | 2000-02-22 | International Business Machines Corporation | Cold electron plasma reactive ion etching using a rotating electromagnetic filter |
| US6155199A (en) * | 1998-03-31 | 2000-12-05 | Lam Research Corporation | Parallel-antenna transformer-coupled plasma generation system |
| CN1319277A (zh) * | 1999-07-29 | 2001-10-24 | Tdk株式会社 | 具有内置功率放大器的隔离装置 |
| US6424232B1 (en) * | 1999-11-30 | 2002-07-23 | Advanced Energy's Voorhees Operations | Method and apparatus for matching a variable load impedance with an RF power generator impedance |
| US6462482B1 (en) * | 1999-12-02 | 2002-10-08 | Anelva Corporation | Plasma processing system for sputter deposition applications |
| US6437653B1 (en) * | 2000-09-28 | 2002-08-20 | Sun Microsystems, Inc. | Method and apparatus for providing a variable inductor on a semiconductor chip |
| US6806201B2 (en) * | 2000-09-29 | 2004-10-19 | Hitachi, Ltd. | Plasma processing apparatus and method using active matching |
| JP2002231540A (ja) | 2001-01-31 | 2002-08-16 | Nec Tokin Corp | 磁気バイアス用磁石を有する磁気コア及びそれを用いたインダクタンス部品 |
-
2004
- 2004-02-18 US US10/779,876 patent/US7212078B2/en not_active Expired - Fee Related
- 2004-02-20 WO PCT/US2004/004846 patent/WO2004077894A2/en not_active Ceased
- 2004-02-20 JP JP2006503694A patent/JP2006521725A/ja active Pending
- 2004-02-20 KR KR1020057015699A patent/KR101002371B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060015465A (ko) | 2006-02-17 |
| US20040163594A1 (en) | 2004-08-26 |
| WO2004077894A3 (en) | 2004-11-18 |
| US7212078B2 (en) | 2007-05-01 |
| JP2006521725A (ja) | 2006-09-21 |
| WO2004077894A2 (en) | 2004-09-10 |
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