JP2006521725A5 - - Google Patents

Download PDF

Info

Publication number
JP2006521725A5
JP2006521725A5 JP2006503694A JP2006503694A JP2006521725A5 JP 2006521725 A5 JP2006521725 A5 JP 2006521725A5 JP 2006503694 A JP2006503694 A JP 2006503694A JP 2006503694 A JP2006503694 A JP 2006503694A JP 2006521725 A5 JP2006521725 A5 JP 2006521725A5
Authority
JP
Japan
Prior art keywords
component
matching network
impedance
series
network
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006503694A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006521725A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2004/004846 external-priority patent/WO2004077894A2/en
Publication of JP2006521725A publication Critical patent/JP2006521725A/ja
Publication of JP2006521725A5 publication Critical patent/JP2006521725A5/ja
Pending legal-status Critical Current

Links

JP2006503694A 2003-02-25 2004-02-20 インピーダンスマッチングネットワークおよびネットワークアセンブリを提供するための方法およびシステム Pending JP2006521725A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44954303P 2003-02-25 2003-02-25
PCT/US2004/004846 WO2004077894A2 (en) 2003-02-25 2004-02-20 Method and system for providing impedance matching network and network assembly

Publications (2)

Publication Number Publication Date
JP2006521725A JP2006521725A (ja) 2006-09-21
JP2006521725A5 true JP2006521725A5 (enExample) 2007-04-05

Family

ID=32927532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006503694A Pending JP2006521725A (ja) 2003-02-25 2004-02-20 インピーダンスマッチングネットワークおよびネットワークアセンブリを提供するための方法およびシステム

Country Status (4)

Country Link
US (1) US7212078B2 (enExample)
JP (1) JP2006521725A (enExample)
KR (1) KR101002371B1 (enExample)
WO (1) WO2004077894A2 (enExample)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7264676B2 (en) * 2003-09-11 2007-09-04 United Microelectronics Corp. Plasma apparatus and method capable of adaptive impedance matching
CN100362619C (zh) * 2005-08-05 2008-01-16 中微半导体设备(上海)有限公司 真空反应室的射频匹配耦合网络及其配置方法
JP4943879B2 (ja) * 2007-01-31 2012-05-30 株式会社日立ハイテクノロジーズ プラズマ処理装置
GB2492168A (en) * 2011-06-24 2012-12-26 Penny & Giles Controls Ltd Inductive position sensor with datum adjustment
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
CN107079576B (zh) * 2014-08-15 2020-01-21 应用材料公司 用于等离子体处理系统的紧凑型可配置式模块化射频匹配网络组件
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
ES2814004T3 (es) 2016-08-09 2021-03-25 John Bean Technologies Corp Aparato y procedimiento de procesamiento de radiofrecuencia
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10715095B2 (en) * 2017-10-06 2020-07-14 Lam Research Corporation Radiofrequency (RF) filter for multi-frequency RF bias
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
JP6846387B2 (ja) * 2018-06-22 2021-03-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10622972B2 (en) * 2018-09-10 2020-04-14 Advanced Energy Industries, Inc. Variable capacitor bank
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) * 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US11158488B2 (en) * 2019-06-26 2021-10-26 Mks Instruments, Inc. High speed synchronization of plasma source/bias power delivery
JP7542630B2 (ja) * 2020-01-30 2024-08-30 ラム リサーチ コーポレーション 伸長rfストラップを有するインピーダンス整合器
US11348761B2 (en) * 2020-09-04 2022-05-31 Tokyo Electron Limited Impedance matching apparatus and control method
JP2022067569A (ja) * 2020-10-20 2022-05-06 パナソニックIpマネジメント株式会社 プラズマ処理装置
US12020902B2 (en) 2022-07-14 2024-06-25 Tokyo Electron Limited Plasma processing with broadband RF waveforms
US12284747B2 (en) * 2023-03-07 2025-04-22 Finesse Technology Co., Ltd. Hollow cathode discharge assistant transformer coupled plasma source and operation method of the same

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1911980A (en) * 1932-03-31 1933-05-30 Gen Electric Variable inductor
FR2133211A5 (enExample) * 1971-04-13 1972-11-24 Thomson Csf
US4362632A (en) * 1974-08-02 1982-12-07 Lfe Corporation Gas discharge apparatus
FR2350672A1 (fr) 1976-05-05 1977-12-02 Lignes Telegraph Telephon Procede de fabrication de noyaux magnetiques en ferrite
US4441092A (en) * 1982-05-03 1984-04-03 Rockwell International Corporation Variable inductance with variable pickoff and variable flux medium permeability
US4673589A (en) * 1986-02-18 1987-06-16 Amoco Corporation Photoconducting amorphous carbon
US5315611A (en) * 1986-09-25 1994-05-24 The United States Of America As Represented By The United States Department Of Energy High average power magnetic modulator for metal vapor lasers
JPH0319305A (ja) 1989-06-16 1991-01-28 Fujitsu Ltd 可変インダクタ
US4951009A (en) * 1989-08-11 1990-08-21 Applied Materials, Inc. Tuning method and control system for automatic matching network
US5392018A (en) * 1991-06-27 1995-02-21 Applied Materials, Inc. Electronically tuned matching networks using adjustable inductance elements and resonant tank circuits
US5309063A (en) * 1993-03-04 1994-05-03 David Sarnoff Research Center, Inc. Inductive coil for inductively coupled plasma production apparatus
US5537004A (en) * 1993-03-06 1996-07-16 Tokyo Electron Limited Low frequency electron cyclotron resonance plasma processor
JPH0799351A (ja) * 1993-06-14 1995-04-11 Mitsubishi Electric Corp プラズマ装置
JP3210207B2 (ja) * 1994-04-20 2001-09-17 東京エレクトロン株式会社 プラズマ処理装置
JPH0818309A (ja) * 1994-06-27 1996-01-19 Advantest Corp Yigデバイス用励磁器
US5473291A (en) * 1994-11-16 1995-12-05 Brounley Associates, Inc. Solid state plasma chamber tuner
JP2817647B2 (ja) * 1995-02-02 1998-10-30 日本電気株式会社 可変インダクタンス素子
US5710486A (en) * 1995-05-08 1998-01-20 Applied Materials, Inc. Inductively and multi-capacitively coupled plasma reactor
US5656123A (en) * 1995-06-07 1997-08-12 Varian Associates, Inc. Dual-frequency capacitively-coupled plasma reactor for materials processing
US5767628A (en) * 1995-12-20 1998-06-16 International Business Machines Corporation Helicon plasma processing tool utilizing a ferromagnetic induction coil with an internal cooling channel
US6095084A (en) * 1996-02-02 2000-08-01 Applied Materials, Inc. High density plasma process chamber
US6252354B1 (en) 1996-11-04 2001-06-26 Applied Materials, Inc. RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control
US5889252A (en) * 1996-12-19 1999-03-30 Lam Research Corporation Method of and apparatus for independently controlling electric parameters of an impedance matching network
US6652717B1 (en) 1997-05-16 2003-11-25 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6579426B1 (en) * 1997-05-16 2003-06-17 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6178920B1 (en) 1997-06-05 2001-01-30 Applied Materials, Inc. Plasma reactor with internal inductive antenna capable of generating helicon wave
US6375810B2 (en) * 1997-08-07 2002-04-23 Applied Materials, Inc. Plasma vapor deposition with coil sputtering
US5842154A (en) * 1997-09-15 1998-11-24 Eni Technologies, Inc. Fuzzy logic tuning of RF matching network
US6028394A (en) 1998-03-24 2000-02-22 International Business Machines Corporation Cold electron plasma reactive ion etching using a rotating electromagnetic filter
US6155199A (en) * 1998-03-31 2000-12-05 Lam Research Corporation Parallel-antenna transformer-coupled plasma generation system
WO2001010047A1 (fr) * 1999-07-29 2001-02-08 Tdk Corporation Isolateur a amplificateur de puissance integre
US6424232B1 (en) 1999-11-30 2002-07-23 Advanced Energy's Voorhees Operations Method and apparatus for matching a variable load impedance with an RF power generator impedance
US6462482B1 (en) * 1999-12-02 2002-10-08 Anelva Corporation Plasma processing system for sputter deposition applications
US6437653B1 (en) 2000-09-28 2002-08-20 Sun Microsystems, Inc. Method and apparatus for providing a variable inductor on a semiconductor chip
US6806201B2 (en) 2000-09-29 2004-10-19 Hitachi, Ltd. Plasma processing apparatus and method using active matching
JP2002231540A (ja) 2001-01-31 2002-08-16 Nec Tokin Corp 磁気バイアス用磁石を有する磁気コア及びそれを用いたインダクタンス部品

Similar Documents

Publication Publication Date Title
JP2006521725A5 (enExample)
WO2007127496A3 (en) Topography directed patterning
WO2009041294A1 (ja) 積層帯域通過フィルタ
JP2007516682A5 (enExample)
MY130797A (en) Multilayer ceramic capacitor and method for manufacturing same
JP2002179603A5 (enExample)
JP2008160192A5 (enExample)
FR2945154B1 (fr) Filtre de mode commun a inductances couplees
WO2009077856A3 (en) Variable inductor
TW200703765A (en) Multilayer filter
EP1598934A3 (en) Filter comprising thin-film resonators and inductor, duplexer and fabricating methods thereof
EP2475098A3 (en) Variable matching circuit
CA2344077A1 (en) Laminate maple baseball bat construction
JP2008121644A5 (enExample)
JP2006222971A5 (enExample)
JP2008521318A5 (enExample)
ATE512494T1 (de) Netzfilter
WO2009044585A1 (ja) 弾性波フィルタ装置
JP2014519234A5 (enExample)
WO2006127778A3 (en) Stent used in conjunction with a resonant circuit
EP1777803A3 (en) Frequency converter
EP2309642A3 (en) Bias circuit
Fernando et al. Supercoherent states of OSp (8∗| 2N), conformal superfields and the AdS7/CFT6 duality
JP2007028366A5 (enExample)
CN220701661U (zh) 一种新提把