JP2006521725A5 - - Google Patents
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- Publication number
- JP2006521725A5 JP2006521725A5 JP2006503694A JP2006503694A JP2006521725A5 JP 2006521725 A5 JP2006521725 A5 JP 2006521725A5 JP 2006503694 A JP2006503694 A JP 2006503694A JP 2006503694 A JP2006503694 A JP 2006503694A JP 2006521725 A5 JP2006521725 A5 JP 2006521725A5
- Authority
- JP
- Japan
- Prior art keywords
- component
- matching network
- impedance
- series
- network
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US44954303P | 2003-02-25 | 2003-02-25 | |
| PCT/US2004/004846 WO2004077894A2 (en) | 2003-02-25 | 2004-02-20 | Method and system for providing impedance matching network and network assembly |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006521725A JP2006521725A (ja) | 2006-09-21 |
| JP2006521725A5 true JP2006521725A5 (enExample) | 2007-04-05 |
Family
ID=32927532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006503694A Pending JP2006521725A (ja) | 2003-02-25 | 2004-02-20 | インピーダンスマッチングネットワークおよびネットワークアセンブリを提供するための方法およびシステム |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7212078B2 (enExample) |
| JP (1) | JP2006521725A (enExample) |
| KR (1) | KR101002371B1 (enExample) |
| WO (1) | WO2004077894A2 (enExample) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7264676B2 (en) * | 2003-09-11 | 2007-09-04 | United Microelectronics Corp. | Plasma apparatus and method capable of adaptive impedance matching |
| CN100362619C (zh) * | 2005-08-05 | 2008-01-16 | 中微半导体设备(上海)有限公司 | 真空反应室的射频匹配耦合网络及其配置方法 |
| JP4943879B2 (ja) * | 2007-01-31 | 2012-05-30 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| GB2492168A (en) * | 2011-06-24 | 2012-12-26 | Penny & Giles Controls Ltd | Inductive position sensor with datum adjustment |
| US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
| CN107079576B (zh) * | 2014-08-15 | 2020-01-21 | 应用材料公司 | 用于等离子体处理系统的紧凑型可配置式模块化射频匹配网络组件 |
| US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
| US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
| US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
| US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
| US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
| ES2814004T3 (es) | 2016-08-09 | 2021-03-25 | John Bean Technologies Corp | Aparato y procedimiento de procesamiento de radiofrecuencia |
| US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
| US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
| US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
| US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
| US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
| JP7176860B6 (ja) | 2017-05-17 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | 前駆体の流れを改善する半導体処理チャンバ |
| US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
| US10715095B2 (en) * | 2017-10-06 | 2020-07-14 | Lam Research Corporation | Radiofrequency (RF) filter for multi-frequency RF bias |
| US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
| US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
| US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
| US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
| US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
| US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
| JP6846387B2 (ja) * | 2018-06-22 | 2021-03-24 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US10622972B2 (en) * | 2018-09-10 | 2020-04-14 | Advanced Energy Industries, Inc. | Variable capacitor bank |
| US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
| US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
| US11062887B2 (en) * | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
| US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
| US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
| US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
| US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
| US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
| US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
| US11158488B2 (en) * | 2019-06-26 | 2021-10-26 | Mks Instruments, Inc. | High speed synchronization of plasma source/bias power delivery |
| JP7542630B2 (ja) * | 2020-01-30 | 2024-08-30 | ラム リサーチ コーポレーション | 伸長rfストラップを有するインピーダンス整合器 |
| US11348761B2 (en) * | 2020-09-04 | 2022-05-31 | Tokyo Electron Limited | Impedance matching apparatus and control method |
| JP2022067569A (ja) * | 2020-10-20 | 2022-05-06 | パナソニックIpマネジメント株式会社 | プラズマ処理装置 |
| US12020902B2 (en) | 2022-07-14 | 2024-06-25 | Tokyo Electron Limited | Plasma processing with broadband RF waveforms |
| US12284747B2 (en) * | 2023-03-07 | 2025-04-22 | Finesse Technology Co., Ltd. | Hollow cathode discharge assistant transformer coupled plasma source and operation method of the same |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1911980A (en) * | 1932-03-31 | 1933-05-30 | Gen Electric | Variable inductor |
| FR2133211A5 (enExample) * | 1971-04-13 | 1972-11-24 | Thomson Csf | |
| US4362632A (en) * | 1974-08-02 | 1982-12-07 | Lfe Corporation | Gas discharge apparatus |
| FR2350672A1 (fr) | 1976-05-05 | 1977-12-02 | Lignes Telegraph Telephon | Procede de fabrication de noyaux magnetiques en ferrite |
| US4441092A (en) * | 1982-05-03 | 1984-04-03 | Rockwell International Corporation | Variable inductance with variable pickoff and variable flux medium permeability |
| US4673589A (en) * | 1986-02-18 | 1987-06-16 | Amoco Corporation | Photoconducting amorphous carbon |
| US5315611A (en) * | 1986-09-25 | 1994-05-24 | The United States Of America As Represented By The United States Department Of Energy | High average power magnetic modulator for metal vapor lasers |
| JPH0319305A (ja) | 1989-06-16 | 1991-01-28 | Fujitsu Ltd | 可変インダクタ |
| US4951009A (en) * | 1989-08-11 | 1990-08-21 | Applied Materials, Inc. | Tuning method and control system for automatic matching network |
| US5392018A (en) * | 1991-06-27 | 1995-02-21 | Applied Materials, Inc. | Electronically tuned matching networks using adjustable inductance elements and resonant tank circuits |
| US5309063A (en) * | 1993-03-04 | 1994-05-03 | David Sarnoff Research Center, Inc. | Inductive coil for inductively coupled plasma production apparatus |
| US5537004A (en) * | 1993-03-06 | 1996-07-16 | Tokyo Electron Limited | Low frequency electron cyclotron resonance plasma processor |
| JPH0799351A (ja) * | 1993-06-14 | 1995-04-11 | Mitsubishi Electric Corp | プラズマ装置 |
| JP3210207B2 (ja) * | 1994-04-20 | 2001-09-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JPH0818309A (ja) * | 1994-06-27 | 1996-01-19 | Advantest Corp | Yigデバイス用励磁器 |
| US5473291A (en) * | 1994-11-16 | 1995-12-05 | Brounley Associates, Inc. | Solid state plasma chamber tuner |
| JP2817647B2 (ja) * | 1995-02-02 | 1998-10-30 | 日本電気株式会社 | 可変インダクタンス素子 |
| US5710486A (en) * | 1995-05-08 | 1998-01-20 | Applied Materials, Inc. | Inductively and multi-capacitively coupled plasma reactor |
| US5656123A (en) * | 1995-06-07 | 1997-08-12 | Varian Associates, Inc. | Dual-frequency capacitively-coupled plasma reactor for materials processing |
| US5767628A (en) * | 1995-12-20 | 1998-06-16 | International Business Machines Corporation | Helicon plasma processing tool utilizing a ferromagnetic induction coil with an internal cooling channel |
| US6095084A (en) * | 1996-02-02 | 2000-08-01 | Applied Materials, Inc. | High density plasma process chamber |
| US6252354B1 (en) | 1996-11-04 | 2001-06-26 | Applied Materials, Inc. | RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control |
| US5889252A (en) * | 1996-12-19 | 1999-03-30 | Lam Research Corporation | Method of and apparatus for independently controlling electric parameters of an impedance matching network |
| US6652717B1 (en) | 1997-05-16 | 2003-11-25 | Applied Materials, Inc. | Use of variable impedance to control coil sputter distribution |
| US6579426B1 (en) * | 1997-05-16 | 2003-06-17 | Applied Materials, Inc. | Use of variable impedance to control coil sputter distribution |
| US6178920B1 (en) | 1997-06-05 | 2001-01-30 | Applied Materials, Inc. | Plasma reactor with internal inductive antenna capable of generating helicon wave |
| US6375810B2 (en) * | 1997-08-07 | 2002-04-23 | Applied Materials, Inc. | Plasma vapor deposition with coil sputtering |
| US5842154A (en) * | 1997-09-15 | 1998-11-24 | Eni Technologies, Inc. | Fuzzy logic tuning of RF matching network |
| US6028394A (en) | 1998-03-24 | 2000-02-22 | International Business Machines Corporation | Cold electron plasma reactive ion etching using a rotating electromagnetic filter |
| US6155199A (en) * | 1998-03-31 | 2000-12-05 | Lam Research Corporation | Parallel-antenna transformer-coupled plasma generation system |
| WO2001010047A1 (fr) * | 1999-07-29 | 2001-02-08 | Tdk Corporation | Isolateur a amplificateur de puissance integre |
| US6424232B1 (en) | 1999-11-30 | 2002-07-23 | Advanced Energy's Voorhees Operations | Method and apparatus for matching a variable load impedance with an RF power generator impedance |
| US6462482B1 (en) * | 1999-12-02 | 2002-10-08 | Anelva Corporation | Plasma processing system for sputter deposition applications |
| US6437653B1 (en) | 2000-09-28 | 2002-08-20 | Sun Microsystems, Inc. | Method and apparatus for providing a variable inductor on a semiconductor chip |
| US6806201B2 (en) | 2000-09-29 | 2004-10-19 | Hitachi, Ltd. | Plasma processing apparatus and method using active matching |
| JP2002231540A (ja) | 2001-01-31 | 2002-08-16 | Nec Tokin Corp | 磁気バイアス用磁石を有する磁気コア及びそれを用いたインダクタンス部品 |
-
2004
- 2004-02-18 US US10/779,876 patent/US7212078B2/en not_active Expired - Fee Related
- 2004-02-20 JP JP2006503694A patent/JP2006521725A/ja active Pending
- 2004-02-20 WO PCT/US2004/004846 patent/WO2004077894A2/en not_active Ceased
- 2004-02-20 KR KR1020057015699A patent/KR101002371B1/ko not_active Expired - Fee Related
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