JP2006520104A - 二酸化炭素を使用した浸漬リソグラフィ方法 - Google Patents

二酸化炭素を使用した浸漬リソグラフィ方法 Download PDF

Info

Publication number
JP2006520104A
JP2006520104A JP2006508689A JP2006508689A JP2006520104A JP 2006520104 A JP2006520104 A JP 2006520104A JP 2006508689 A JP2006508689 A JP 2006508689A JP 2006508689 A JP2006508689 A JP 2006508689A JP 2006520104 A JP2006520104 A JP 2006520104A
Authority
JP
Japan
Prior art keywords
immersion
layer
photoresist layer
carbon dioxide
fluid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006508689A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006520104A5 (https=
Inventor
デシモーネ，ジョゼフ・エム
ローランド，ジェイソン・ピー
Original Assignee
ユニヴァーシティ・オヴ・ノース・キャロライナ・アト・チャペル・ヒル
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ユニヴァーシティ・オヴ・ノース・キャロライナ・アト・チャペル・ヒル filed Critical ユニヴァーシティ・オヴ・ノース・キャロライナ・アト・チャペル・ヒル
Publication of JP2006520104A publication Critical patent/JP2006520104A/ja
Publication of JP2006520104A5 publication Critical patent/JP2006520104A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2006508689A 2003-03-11 2004-01-23 二酸化炭素を使用した浸漬リソグラフィ方法 Pending JP2006520104A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/386,356 US7029832B2 (en) 2003-03-11 2003-03-11 Immersion lithography methods using carbon dioxide
PCT/US2004/003556 WO2004081666A1 (en) 2003-03-11 2004-01-23 Immersion lithography methods using carbon dioxide

Publications (2)

Publication Number Publication Date
JP2006520104A true JP2006520104A (ja) 2006-08-31
JP2006520104A5 JP2006520104A5 (https=) 2007-03-08

Family

ID=32961680

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006508689A Pending JP2006520104A (ja) 2003-03-11 2004-01-23 二酸化炭素を使用した浸漬リソグラフィ方法

Country Status (5)

Country Link
US (1) US7029832B2 (https=)
EP (1) EP1602012A1 (https=)
JP (1) JP2006520104A (https=)
TW (1) TW200504864A (https=)
WO (1) WO2004081666A1 (https=)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006189687A (ja) * 2005-01-07 2006-07-20 Jsr Corp フォトレジストパターン形成方法、及びフォトレジストパターン形成用基板
JP2006344960A (ja) * 2005-06-10 2006-12-21 Internatl Business Mach Corp <Ibm> 浸漬リソグラフィ装置および方法（少なくとも投影光学コンポーネントとウェハ上で等圧力を有する浸漬リソグラフィ装置）
JP2007513518A (ja) * 2003-12-03 2007-05-24 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 適応浸漬媒体を使用した浸漬リソグラフィプロセス
JP2008530789A (ja) * 2005-02-10 2008-08-07 エーエスエムエル ネザーランズ ビー．ブイ． 液浸液、露光装置および露光方法
JP2008227548A (ja) * 2004-12-20 2008-09-25 Asml Netherlands Bv リソグラフィ装置とデバイス製造方法
JP2009500828A (ja) * 2005-07-01 2009-01-08 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 浸漬リソグラフィにおいて超臨界流体を用いてウェーハを乾燥し、レンズを洗浄するための方法及びシステム
JP2015029155A (ja) * 2004-06-09 2015-02-12 株式会社ニコン 露光装置及びデバイス製造方法

Families Citing this family (149)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG121819A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR100585476B1 (ko) 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
US7372541B2 (en) * 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4352874B2 (ja) * 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
US7242455B2 (en) * 2002-12-10 2007-07-10 Nikon Corporation Exposure apparatus and method for producing device
AU2003289271A1 (en) * 2002-12-10 2004-06-30 Nikon Corporation Exposure apparatus, exposure method and method for manufacturing device
EP1571695A4 (en) * 2002-12-10 2008-10-15 Nikon Corp EXPOSURE DEVICE AND METHOD FOR PRODUCING THE DEVICE
CN101872135B (zh) * 2002-12-10 2013-07-31 株式会社尼康 曝光设备和器件制造法
US7948604B2 (en) * 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
SG171468A1 (en) * 2002-12-10 2011-06-29 Nikon Corp Exposure apparatus and method for producing device
DE10261775A1 (de) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Vorrichtung zur optischen Vermessung eines Abbildungssystems
EP2466621B1 (en) 2003-02-26 2015-04-01 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR101181688B1 (ko) 2003-03-25 2012-09-19 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4902201B2 (ja) * 2003-04-07 2012-03-21 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
WO2004093159A2 (en) * 2003-04-09 2004-10-28 Nikon Corporation Immersion lithography fluid control system
EP2921905B1 (en) * 2003-04-10 2017-12-27 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
KR101177330B1 (ko) * 2003-04-10 2012-08-30 가부시키가이샤 니콘 액침 리소그래피 장치
JP4656057B2 (ja) * 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
WO2004090634A2 (en) * 2003-04-10 2004-10-21 Nikon Corporation Environmental system including vaccum scavange for an immersion lithography apparatus
KR20170016014A (ko) 2003-04-11 2017-02-10 가부시키가이샤 니콘 액침 리소그래피에 의한 광학기기의 세정방법
WO2004092830A2 (en) 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
KR101159564B1 (ko) 2003-04-11 2012-06-25 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침액체를 유지하는 장치 및 방법
ATE542167T1 (de) * 2003-04-17 2012-02-15 Nikon Corp Lithographisches immersionsgerät
TWI295414B (en) 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN100437358C (zh) * 2003-05-15 2008-11-26 株式会社尼康 曝光装置及器件制造方法
TWI424470B (zh) 2003-05-23 2014-01-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
TWI421911B (zh) 2003-05-23 2014-01-01 尼康股份有限公司 An exposure method, an exposure apparatus, and an element manufacturing method
CN100541717C (zh) 2003-05-28 2009-09-16 株式会社尼康 曝光方法、曝光装置以及器件制造方法
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317504B2 (en) * 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2261742A3 (en) 2003-06-11 2011-05-25 ASML Netherlands BV Lithographic apparatus and device manufacturing method.
KR101520591B1 (ko) * 2003-06-13 2015-05-14 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법
TWI515770B (zh) 2003-06-19 2016-01-01 尼康股份有限公司 An exposure apparatus, an exposure method, and an element manufacturing method
WO2005006026A2 (en) * 2003-07-01 2005-01-20 Nikon Corporation Using isotopically specified fluids as optical elements
EP2466382B1 (en) * 2003-07-08 2014-11-26 Nikon Corporation Wafer table for immersion lithography
WO2005006416A1 (ja) * 2003-07-09 2005-01-20 Nikon Corporation 結合装置、露光装置、及びデバイス製造方法
WO2005006418A1 (ja) 2003-07-09 2005-01-20 Nikon Corporation 露光装置及びデバイス製造方法
ATE513309T1 (de) * 2003-07-09 2011-07-15 Nikon Corp Belichtungsvorrichtung und verfahren zur bauelementeherstellung
EP1650787A4 (en) 2003-07-25 2007-09-19 Nikon Corp INVESTIGATION METHOD AND INVESTIGATION DEVICE FOR AN OPTICAL PROJECTION SYSTEM AND METHOD OF MANUFACTURING AN OPTICAL PROJECTION SYSTEM
CN102043350B (zh) * 2003-07-28 2014-01-29 株式会社尼康 曝光装置、器件制造方法、及曝光装置的控制方法
EP1503244A1 (en) 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7175968B2 (en) * 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7326522B2 (en) * 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US20050022731A1 (en) * 2003-07-30 2005-02-03 Bernard Petrillo Immersion optics fluid dispenser
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN100407371C (zh) * 2003-08-29 2008-07-30 株式会社尼康 曝光装置和器件加工方法
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI263859B (en) * 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR101523180B1 (ko) 2003-09-03 2015-05-26 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
WO2005029559A1 (ja) * 2003-09-19 2005-03-31 Nikon Corporation 露光装置及びデバイス製造方法
KR101664642B1 (ko) 2003-09-29 2016-10-11 가부시키가이샤 니콘 노광장치, 노광방법 및 디바이스 제조방법
WO2005031824A1 (ja) * 2003-09-29 2005-04-07 Nikon Corporation 投影露光装置、投影露光方法およびデバイス製造方法
JP2005136364A (ja) * 2003-10-08 2005-05-26 Zao Nikon Co Ltd 基板搬送装置、露光装置、並びにデバイス製造方法
WO2005036621A1 (ja) 2003-10-08 2005-04-21 Zao Nikon Co., Ltd. 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法
EP1672682A4 (en) * 2003-10-08 2008-10-15 Zao Nikon Co Ltd SUBSTRATE TRANSPORT DEVICE AND METHOD, EXPOSURE DEVICE AND METHOD AND COMPONENT MANUFACTURING METHOD
TWI598934B (zh) 2003-10-09 2017-09-11 尼康股份有限公司 Exposure apparatus, exposure method, and device manufacturing method
US7352433B2 (en) 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411653B2 (en) * 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
US7528929B2 (en) 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2717295B1 (en) 2003-12-03 2018-07-18 Nikon Corporation Exposure apparatus, exposure method, and method for producing a device
US20070081133A1 (en) * 2004-12-14 2007-04-12 Niikon Corporation Projection exposure apparatus and stage unit, and exposure method
DE602004030481D1 (de) * 2003-12-15 2011-01-20 Nippon Kogaku Kk Bühnensystem, belichtungsvorrichtung und belichtungsverfahren
KR101111363B1 (ko) * 2003-12-15 2012-04-12 가부시키가이샤 니콘 투영노광장치 및 스테이지 장치, 그리고 노광방법
MXPA06006738A (es) 2003-12-19 2006-08-31 Univ North Carolina Metodos para fabricar micro- y nano-estructuras aisladas utilizando litografia suave o de impresion.
US7460206B2 (en) * 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
JP4323946B2 (ja) * 2003-12-19 2009-09-02 キヤノン株式会社 露光装置
US7394521B2 (en) * 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN1938646B (zh) 2004-01-20 2010-12-15 卡尔蔡司Smt股份公司 曝光装置和用于投影透镜的测量装置
US7391501B2 (en) * 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
TWI259319B (en) * 2004-01-23 2006-08-01 Air Prod & Chem Immersion lithography fluids
US20050161644A1 (en) * 2004-01-23 2005-07-28 Peng Zhang Immersion lithography fluids
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
EP1713114B1 (en) 2004-02-03 2018-09-19 Nikon Corporation Exposure apparatus and device manufacturing method
US7741012B1 (en) * 2004-03-01 2010-06-22 Advanced Micro Devices, Inc. Method for removal of immersion lithography medium in immersion lithography processes
JP4220423B2 (ja) 2004-03-24 2009-02-04 株式会社東芝 レジストパターン形成方法
KR101851511B1 (ko) 2004-03-25 2018-04-23 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1747499A2 (en) 2004-05-04 2007-01-31 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
JP3981368B2 (ja) * 2004-05-17 2007-09-26 松下電器産業株式会社 パターン形成方法
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1774405B1 (en) 2004-06-04 2014-08-06 Carl Zeiss SMT GmbH System for measuring the image quality of an optical imaging system
US7463330B2 (en) * 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101433491B1 (ko) 2004-07-12 2014-08-22 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4264038B2 (ja) * 2004-07-13 2009-05-13 パナソニック株式会社 液浸露光用の液体及びパターン形成方法
KR20070048164A (ko) * 2004-08-18 2007-05-08 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7701550B2 (en) * 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7209213B2 (en) * 2004-10-07 2007-04-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7732123B2 (en) * 2004-11-23 2010-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion photolithography with megasonic rinse
US7397533B2 (en) * 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG124351A1 (en) 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1681597B1 (en) 2005-01-14 2010-03-10 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006080516A1 (ja) 2005-01-31 2006-08-03 Nikon Corporation 露光装置及びデバイス製造方法
US8692973B2 (en) 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
US7399581B2 (en) * 2005-02-24 2008-07-15 International Business Machines Corporation Photoresist topcoat for a photolithographic process
US7282701B2 (en) 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US7291850B2 (en) * 2005-04-08 2007-11-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7927779B2 (en) 2005-06-30 2011-04-19 Taiwan Semiconductor Manufacturing Companym, Ltd. Water mark defect prevention for immersion lithography
US20070002296A1 (en) * 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography defect reduction
US7571992B2 (en) * 2005-07-01 2009-08-11 Xerox Corporation Pressure compensation structure for microelectromechanical systems
US8383322B2 (en) 2005-08-05 2013-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography watermark reduction
US7535644B2 (en) * 2005-08-12 2009-05-19 Asml Netherlands B.V. Lens element, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7357768B2 (en) * 2005-09-22 2008-04-15 William Marshall Recliner exerciser
US7993808B2 (en) 2005-09-30 2011-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. TARC material for immersion watermark reduction
US7495743B2 (en) * 2005-09-30 2009-02-24 International Business Machines Corporation Immersion optical lithography system having protective optical coating
US20070124987A1 (en) * 2005-12-05 2007-06-07 Brown Jeffrey K Electronic pest control apparatus
KR100768849B1 (ko) * 2005-12-06 2007-10-22 엘지전자 주식회사 계통 연계형 연료전지 시스템의 전원공급장치 및 방법
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102006021797A1 (de) * 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
JP2008041741A (ja) * 2006-08-02 2008-02-21 Matsushita Electric Ind Co Ltd パターン形成方法
US8518628B2 (en) 2006-09-22 2013-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Surface switchable photoresist
US8817226B2 (en) 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
US8654305B2 (en) 2007-02-15 2014-02-18 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US8237911B2 (en) * 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
TWI389551B (zh) * 2007-08-09 2013-03-11 晨星半導體股份有限公司 迦瑪校正裝置
FR2927708A1 (fr) * 2008-02-19 2009-08-21 Commissariat Energie Atomique Procede de photolithographie ultraviolette a immersion
KR101448152B1 (ko) * 2008-03-26 2014-10-07 삼성전자주식회사 수직 포토게이트를 구비한 거리측정 센서 및 그를 구비한입체 컬러 이미지 센서
US20090246706A1 (en) * 2008-04-01 2009-10-01 Applied Materials, Inc. Patterning resolution enhancement combining interference lithography and self-aligned double patterning techniques
US9176393B2 (en) 2008-05-28 2015-11-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9695049B2 (en) 2014-03-14 2017-07-04 Saes Getters S.P.A. System and method for ultra high purity (UHP) carbon dioxide purification
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
KR102225957B1 (ko) * 2018-09-12 2021-03-11 세메스 주식회사 기판 처리 장치
US12211691B2 (en) 2018-12-20 2025-01-28 Lam Research Corporation Dry development of resists
TWI837391B (zh) 2019-06-26 2024-04-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
SG11202108851RA (en) 2020-01-15 2021-09-29 Lam Res Corp Underlayer for photoresist adhesion and dose reduction
EP4078292A4 (en) 2020-07-07 2023-11-22 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
US20230107357A1 (en) 2020-11-13 2023-04-06 Lam Research Corporation Process tool for dry removal of photoresist
JP7681106B2 (ja) 2020-12-08 2025-05-21 ラム リサーチ コーポレーション 有機蒸気によるフォトレジストの現像
KR102725782B1 (ko) 2022-07-01 2024-11-05 램 리써치 코포레이션 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상
US12474640B2 (en) 2023-03-17 2025-11-18 Lam Research Corporation Integration of dry development and etch processes for EUV patterning in a single process chamber
JP7852072B2 (ja) 2023-07-27 2026-04-27 ラム リサーチ コーポレーション 金属含有フォトレジストのためのオールインワン乾式現像

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5121256A (en) * 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
US5900354A (en) * 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
US6358673B1 (en) * 1998-09-09 2002-03-19 Nippon Telegraph And Telephone Corporation Pattern formation method and apparatus
JP2000085025A (ja) 1998-09-09 2000-03-28 Nikon Corp 光学薄膜の製造方法及び光学薄膜
US6593058B1 (en) 1998-09-23 2003-07-15 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
WO2000067072A1 (en) 1999-05-04 2000-11-09 E.I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
US6509138B2 (en) * 2000-01-12 2003-01-21 Semiconductor Research Corporation Solventless, resistless direct dielectric patterning
WO2002091078A1 (en) * 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
US6683008B1 (en) * 2002-11-19 2004-01-27 International Business Machines Corporation Process of removing ion-implanted photoresist from a workpiece

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007513518A (ja) * 2003-12-03 2007-05-24 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 適応浸漬媒体を使用した浸漬リソグラフィプロセス
JP2015029155A (ja) * 2004-06-09 2015-02-12 株式会社ニコン 露光装置及びデバイス製造方法
US9703210B2 (en) 2004-12-20 2017-07-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2012044227A (ja) * 2004-12-20 2012-03-01 Asml Netherlands Bv リソグラフィ装置
JP2008227548A (ja) * 2004-12-20 2008-09-25 Asml Netherlands Bv リソグラフィ装置とデバイス製造方法
JP2008227547A (ja) * 2004-12-20 2008-09-25 Asml Netherlands Bv リソグラフィ装置とデバイス製造方法
JP2008263221A (ja) * 2004-12-20 2008-10-30 Asml Netherlands Bv リソグラフィ装置とデバイス製造方法
JP2008277854A (ja) * 2004-12-20 2008-11-13 Asml Netherlands Bv リソグラフィ装置とデバイス製造方法
US10509326B2 (en) 2004-12-20 2019-12-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8941811B2 (en) 2004-12-20 2015-01-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006189687A (ja) * 2005-01-07 2006-07-20 Jsr Corp フォトレジストパターン形成方法、及びフォトレジストパターン形成用基板
JP2008530789A (ja) * 2005-02-10 2008-08-07 エーエスエムエル ネザーランズ ビー．ブイ． 液浸液、露光装置および露光方法
US9772565B2 (en) 2005-02-10 2017-09-26 Asml Netherlands B.V. Immersion liquid, exposure apparatus, and exposure process
US10712675B2 (en) 2005-02-10 2020-07-14 Asml Netherlands B.V. Immersion liquid, exposure apparatus, and exposure process
JP2006344960A (ja) * 2005-06-10 2006-12-21 Internatl Business Mach Corp <Ibm> 浸漬リソグラフィ装置および方法（少なくとも投影光学コンポーネントとウェハ上で等圧力を有する浸漬リソグラフィ装置）
JP2009500828A (ja) * 2005-07-01 2009-01-08 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 浸漬リソグラフィにおいて超臨界流体を用いてウェーハを乾燥し、レンズを洗浄するための方法及びシステム

Also Published As

Publication number Publication date
US7029832B2 (en) 2006-04-18
US20040180299A1 (en) 2004-09-16
WO2004081666A1 (en) 2004-09-23
EP1602012A1 (en) 2005-12-07
TW200504864A (en) 2005-02-01

Similar Documents

Publication Publication Date Title
US7029832B2 (en) Immersion lithography methods using carbon dioxide
CN101084467B (zh) 含硅的tarc/阻挡层
US6764809B2 (en) CO2-processes photoresists, polymers, and photoactive compounds for microlithography
US8822134B2 (en) Resist developer, method for forming a resist pattern and method for manufacturing a mold
CN100373260C (zh) 光刻法中使用的涂敷了氟聚合物的光学掩模
CN1272673C (zh) 使用反射掩膜的集成电路
CN101164013B (zh) 具有改进性能的浸渍表面涂料
US20080038676A1 (en) Top coat material and use thereof in lithography processes
JP2001133984A (ja) 反射防止膜材料及びパターン形成方法
US7078134B2 (en) Photolithographic mask having a structure region covered by a thin protective coating of only a few atomic layers and methods for the fabrication of the mask including ALCVD to form the thin protective coating
EP1686425B1 (en) Method for forming multilayer resist
CN101300317B (zh) 用于193nm沉浸平版印刷的水可浇铸-水可剥离的面涂层
CN102265217A (zh) 采用压印材料的衬底平坦化及方法
JP5619458B2 (ja) レジストパターンの形成方法及びモールドの製造方法
US9280046B2 (en) Method of fabricating mask
KR20240127294A (ko) 패턴 형성 방법
JP2007078744A (ja) 保護膜形成用材料およびこれを用いたホトレジストパターン形成方法
TWI905684B (zh) 光罩保護薄膜、光罩保護膜組裝件及其製作方法
Yamada et al. Development of spin-on metal hardmask (SOMHM) for advanced node
JP2001194798A (ja) 反射防止膜材料及びパターン形成方法
WO2006104100A1 (ja) 水パージ剤およびそれを用いたレジストパターン形成方法
US7410751B2 (en) Compositions and methods for image development of conventional chemically amplified photoresists
JP2005268382A (ja) パターン形成方法
JP2006196575A (ja) 液浸型露光方法によるレジストパターン形成方法
JP2007148167A (ja) 液浸露光プロセス用保護膜形成用材料およびこれを用いたホトレジストパターン形成方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070119

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070119

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070122

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091201

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100420