JP2006518943A - 研磨パッド装置及び方法 - Google Patents
研磨パッド装置及び方法 Download PDFInfo
- Publication number
- JP2006518943A JP2006518943A JP2006503859A JP2006503859A JP2006518943A JP 2006518943 A JP2006518943 A JP 2006518943A JP 2006503859 A JP2006503859 A JP 2006503859A JP 2006503859 A JP2006503859 A JP 2006503859A JP 2006518943 A JP2006518943 A JP 2006518943A
- Authority
- JP
- Japan
- Prior art keywords
- polishing pad
- pad
- wafer
- porous
- conditioning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/373,513 US6899612B2 (en) | 2003-02-25 | 2003-02-25 | Polishing pad apparatus and methods |
| PCT/US2004/005563 WO2004077520A2 (en) | 2003-02-25 | 2004-02-23 | Wafer polishing and pad conditioning methods |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006518943A true JP2006518943A (ja) | 2006-08-17 |
| JP2006518943A5 JP2006518943A5 (enExample) | 2007-03-01 |
Family
ID=32868728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006503859A Withdrawn JP2006518943A (ja) | 2003-02-25 | 2004-02-23 | 研磨パッド装置及び方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6899612B2 (enExample) |
| JP (1) | JP2006518943A (enExample) |
| KR (1) | KR20050107760A (enExample) |
| CN (1) | CN1771110A (enExample) |
| TW (1) | TW200505634A (enExample) |
| WO (1) | WO2004077520A2 (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008188757A (ja) * | 2007-01-29 | 2008-08-21 | Rohm & Haas Electronic Materials Cmp Holdings Inc | ケミカルメカニカル研磨パッド |
| WO2015037606A1 (ja) * | 2013-09-11 | 2015-03-19 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
| WO2015098271A1 (ja) * | 2013-12-25 | 2015-07-02 | Dic株式会社 | 多孔体及び研磨パッド |
| JP2017042852A (ja) * | 2015-08-25 | 2017-03-02 | 株式会社フジミインコーポレーテッド | 研磨パッド、研磨パッドのコンディショニング方法、パッドコンディショニング剤、それらの利用 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005012684A1 (de) * | 2005-03-18 | 2006-09-21 | Infineon Technologies Ag | Verfahren zum Steuern eines CMP-Prozesses und Poliertuch |
| US7494404B2 (en) * | 2006-02-17 | 2009-02-24 | Chien-Min Sung | Tools for polishing and associated methods |
| US7241206B1 (en) * | 2006-02-17 | 2007-07-10 | Chien-Min Sung | Tools for polishing and associated methods |
| DE102007024954A1 (de) | 2007-05-30 | 2008-12-04 | Siltronic Ag | Poliertuch für DSP und CMP |
| US9802293B1 (en) * | 2016-09-29 | 2017-10-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method to shape the surface of chemical mechanical polishing pads |
| US20180085891A1 (en) * | 2016-09-29 | 2018-03-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Apparatus for shaping the surface of chemical mechanical polishing pads |
| JP7118841B2 (ja) * | 2018-09-28 | 2022-08-16 | 富士紡ホールディングス株式会社 | 研磨パッド |
| CN119167661B (zh) * | 2024-11-20 | 2025-03-21 | 苏州大学 | 球形抛光头氧化铈抛光液斜轴抛光加工表面形貌预测方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US182401A (en) * | 1876-09-19 | Thomas baeeett | ||
| US5569062A (en) * | 1995-07-03 | 1996-10-29 | Speedfam Corporation | Polishing pad conditioning |
| KR970023800A (ko) | 1995-10-19 | 1997-05-30 | 마에다 시게루 | 폴리싱포의 드레싱방법 및 장치 |
| US6245679B1 (en) * | 1996-08-16 | 2001-06-12 | Rodel Holdings, Inc | Apparatus and methods for chemical-mechanical polishing of semiconductor wafers |
| US6224465B1 (en) * | 1997-06-26 | 2001-05-01 | Stuart L. Meyer | Methods and apparatus for chemical mechanical planarization using a microreplicated surface |
| US6139402A (en) | 1997-12-30 | 2000-10-31 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates |
| KR20010093086A (ko) | 1998-11-18 | 2001-10-27 | 갤반 마틴 | 금속 반도체 구조물에서의 화학-기계적 편평화 공정 동안디슁율을 감소시키는 방법 |
| US6419553B2 (en) | 2000-01-04 | 2002-07-16 | Rodel Holdings, Inc. | Methods for break-in and conditioning a fixed abrasive polishing pad |
| US6641471B1 (en) | 2000-09-19 | 2003-11-04 | Rodel Holdings, Inc | Polishing pad having an advantageous micro-texture and methods relating thereto |
| US6679769B2 (en) * | 2000-09-19 | 2004-01-20 | Rodel Holdings, Inc | Polishing pad having an advantageous micro-texture and methods relating thereto |
| US20020182401A1 (en) | 2001-06-01 | 2002-12-05 | Lawing Andrew Scott | Pad conditioner with uniform particle height |
| US6659846B2 (en) * | 2001-09-17 | 2003-12-09 | Agere Systems, Inc. | Pad for chemical mechanical polishing |
-
2003
- 2003-02-25 US US10/373,513 patent/US6899612B2/en not_active Expired - Lifetime
-
2004
- 2004-02-23 JP JP2006503859A patent/JP2006518943A/ja not_active Withdrawn
- 2004-02-23 KR KR1020057015513A patent/KR20050107760A/ko not_active Ceased
- 2004-02-23 WO PCT/US2004/005563 patent/WO2004077520A2/en not_active Ceased
- 2004-02-23 CN CNA2004800048310A patent/CN1771110A/zh active Pending
- 2004-02-25 TW TW093104782A patent/TW200505634A/zh unknown
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008188757A (ja) * | 2007-01-29 | 2008-08-21 | Rohm & Haas Electronic Materials Cmp Holdings Inc | ケミカルメカニカル研磨パッド |
| WO2015037606A1 (ja) * | 2013-09-11 | 2015-03-19 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
| JPWO2015037606A1 (ja) * | 2013-09-11 | 2017-03-02 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
| TWI648129B (zh) * | 2013-09-11 | 2019-01-21 | 日商富士紡控股股份有限公司 | 研磨墊以及其製造方法 |
| WO2015098271A1 (ja) * | 2013-12-25 | 2015-07-02 | Dic株式会社 | 多孔体及び研磨パッド |
| JP2017042852A (ja) * | 2015-08-25 | 2017-03-02 | 株式会社フジミインコーポレーテッド | 研磨パッド、研磨パッドのコンディショニング方法、パッドコンディショニング剤、それらの利用 |
Also Published As
| Publication number | Publication date |
|---|---|
| US6899612B2 (en) | 2005-05-31 |
| WO2004077520A3 (en) | 2004-10-14 |
| US20040166780A1 (en) | 2004-08-26 |
| KR20050107760A (ko) | 2005-11-15 |
| WO2004077520A2 (en) | 2004-09-10 |
| TW200505634A (en) | 2005-02-16 |
| CN1771110A (zh) | 2006-05-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5916011A (en) | Process for polishing a semiconductor device substrate | |
| US6361413B1 (en) | Apparatus and methods for conditioning polishing pads in mechanical and/or chemical-mechanical planarization of microelectronic device substrate assemblies | |
| US6423640B1 (en) | Headless CMP process for oxide planarization | |
| US7104869B2 (en) | Barrier removal at low polish pressure | |
| US5216843A (en) | Polishing pad conditioning apparatus for wafer planarization process | |
| JP3676030B2 (ja) | 研磨パッドのドレッシング方法及び半導体装置の製造方法 | |
| JP2000301454A5 (enExample) | ||
| JP2000301454A (ja) | 化学的機械研磨プロセス及びその構成要素 | |
| US6341997B1 (en) | Method for recycling a polishing pad conditioning disk | |
| WO2000030159A1 (en) | Method to decrease dishing rate during cmp in metal semiconductor structures | |
| US7105446B2 (en) | Apparatus for pre-conditioning CMP polishing pad | |
| US6899612B2 (en) | Polishing pad apparatus and methods | |
| US6302770B1 (en) | In-situ pad conditioning for CMP polisher | |
| CN1484566A (zh) | 用于化学-机械打磨的交联聚乙烯打磨垫、打磨装置和打磨方法 | |
| US6391779B1 (en) | Planarization process | |
| US6843708B2 (en) | Method of reducing defectivity during chemical mechanical planarization | |
| US20230127390A1 (en) | Polishing of polycrystalline materials | |
| US6080671A (en) | Process of chemical-mechanical polishing and manufacturing an integrated circuit | |
| JP2004296596A (ja) | 半導体装置の製造方法 | |
| US20220388117A1 (en) | Polishing pad surface cooling by compressed gas | |
| JPH0957587A (ja) | 軟質材の平坦化方法及び装置 | |
| Wei | Application of chemical‐mechanical polishing for planarizing of silicon nitride passivation layers used in high power III‐V laser devices | |
| JPH1058307A (ja) | ウエハ研磨装置及びウエハ研磨方法 | |
| JP2006319052A (ja) | 半導体装置の製造方法および研磨装置 | |
| JP2009094096A (ja) | 半導体装置の製造装置および半導体装置の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070109 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070109 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20080612 |