KR20050107760A - 웨이퍼 연마 및 패드 컨디셔닝 방법 - Google Patents

웨이퍼 연마 및 패드 컨디셔닝 방법 Download PDF

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Publication number
KR20050107760A
KR20050107760A KR1020057015513A KR20057015513A KR20050107760A KR 20050107760 A KR20050107760 A KR 20050107760A KR 1020057015513 A KR1020057015513 A KR 1020057015513A KR 20057015513 A KR20057015513 A KR 20057015513A KR 20050107760 A KR20050107760 A KR 20050107760A
Authority
KR
South Korea
Prior art keywords
pad
polishing pad
wafer
polishing
conditioning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020057015513A
Other languages
English (en)
Korean (ko)
Inventor
앤드류 스코트 로윙
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 filed Critical 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
Publication of KR20050107760A publication Critical patent/KR20050107760A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
KR1020057015513A 2003-02-25 2004-02-23 웨이퍼 연마 및 패드 컨디셔닝 방법 Ceased KR20050107760A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/373,513 US6899612B2 (en) 2003-02-25 2003-02-25 Polishing pad apparatus and methods
US10/373,513 2003-02-25

Publications (1)

Publication Number Publication Date
KR20050107760A true KR20050107760A (ko) 2005-11-15

Family

ID=32868728

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057015513A Ceased KR20050107760A (ko) 2003-02-25 2004-02-23 웨이퍼 연마 및 패드 컨디셔닝 방법

Country Status (6)

Country Link
US (1) US6899612B2 (enExample)
JP (1) JP2006518943A (enExample)
KR (1) KR20050107760A (enExample)
CN (1) CN1771110A (enExample)
TW (1) TW200505634A (enExample)
WO (1) WO2004077520A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101526010B1 (ko) * 2007-01-29 2015-06-04 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 화학 기계적 연마 패드

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005012684A1 (de) * 2005-03-18 2006-09-21 Infineon Technologies Ag Verfahren zum Steuern eines CMP-Prozesses und Poliertuch
US7494404B2 (en) * 2006-02-17 2009-02-24 Chien-Min Sung Tools for polishing and associated methods
US7241206B1 (en) * 2006-02-17 2007-07-10 Chien-Min Sung Tools for polishing and associated methods
DE102007024954A1 (de) 2007-05-30 2008-12-04 Siltronic Ag Poliertuch für DSP und CMP
WO2015037606A1 (ja) * 2013-09-11 2015-03-19 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
KR101800650B1 (ko) * 2013-12-25 2017-11-23 디아이씨 가부시끼가이샤 연마 패드
JP6809779B2 (ja) * 2015-08-25 2021-01-06 株式会社フジミインコーポレーテッド 研磨パッド、研磨パッドのコンディショニング方法、パッドコンディショニング剤、それらの利用
US9802293B1 (en) * 2016-09-29 2017-10-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method to shape the surface of chemical mechanical polishing pads
US20180085891A1 (en) * 2016-09-29 2018-03-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Apparatus for shaping the surface of chemical mechanical polishing pads
JP7118841B2 (ja) * 2018-09-28 2022-08-16 富士紡ホールディングス株式会社 研磨パッド
CN119167661B (zh) * 2024-11-20 2025-03-21 苏州大学 球形抛光头氧化铈抛光液斜轴抛光加工表面形貌预测方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US182401A (en) * 1876-09-19 Thomas baeeett
US5569062A (en) * 1995-07-03 1996-10-29 Speedfam Corporation Polishing pad conditioning
KR970023800A (ko) 1995-10-19 1997-05-30 마에다 시게루 폴리싱포의 드레싱방법 및 장치
US6245679B1 (en) * 1996-08-16 2001-06-12 Rodel Holdings, Inc Apparatus and methods for chemical-mechanical polishing of semiconductor wafers
US6224465B1 (en) * 1997-06-26 2001-05-01 Stuart L. Meyer Methods and apparatus for chemical mechanical planarization using a microreplicated surface
US6139402A (en) 1997-12-30 2000-10-31 Micron Technology, Inc. Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates
KR20010093086A (ko) 1998-11-18 2001-10-27 갤반 마틴 금속 반도체 구조물에서의 화학-기계적 편평화 공정 동안디슁율을 감소시키는 방법
US6419553B2 (en) 2000-01-04 2002-07-16 Rodel Holdings, Inc. Methods for break-in and conditioning a fixed abrasive polishing pad
US6641471B1 (en) 2000-09-19 2003-11-04 Rodel Holdings, Inc Polishing pad having an advantageous micro-texture and methods relating thereto
US6679769B2 (en) * 2000-09-19 2004-01-20 Rodel Holdings, Inc Polishing pad having an advantageous micro-texture and methods relating thereto
US20020182401A1 (en) 2001-06-01 2002-12-05 Lawing Andrew Scott Pad conditioner with uniform particle height
US6659846B2 (en) * 2001-09-17 2003-12-09 Agere Systems, Inc. Pad for chemical mechanical polishing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101526010B1 (ko) * 2007-01-29 2015-06-04 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 화학 기계적 연마 패드

Also Published As

Publication number Publication date
US6899612B2 (en) 2005-05-31
WO2004077520A3 (en) 2004-10-14
US20040166780A1 (en) 2004-08-26
JP2006518943A (ja) 2006-08-17
WO2004077520A2 (en) 2004-09-10
TW200505634A (en) 2005-02-16
CN1771110A (zh) 2006-05-10

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