JP2006518549A - 混合研磨材の研磨用組成物及びその使用方法 - Google Patents
混合研磨材の研磨用組成物及びその使用方法 Download PDFInfo
- Publication number
- JP2006518549A JP2006518549A JP2006503285A JP2006503285A JP2006518549A JP 2006518549 A JP2006518549 A JP 2006518549A JP 2006503285 A JP2006503285 A JP 2006503285A JP 2006503285 A JP2006503285 A JP 2006503285A JP 2006518549 A JP2006518549 A JP 2006518549A
- Authority
- JP
- Japan
- Prior art keywords
- polishing composition
- abrasive particles
- acid
- abrasive
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 180
- 239000000203 mixture Substances 0.000 title claims abstract description 125
- 238000000034 method Methods 0.000 title claims abstract description 42
- 239000002245 particle Substances 0.000 claims abstract description 118
- 239000000758 substrate Substances 0.000 claims abstract description 54
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000007788 liquid Substances 0.000 claims abstract description 14
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 12
- 239000011164 primary particle Substances 0.000 claims abstract description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 17
- 239000007800 oxidant agent Substances 0.000 claims description 14
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 8
- 239000008119 colloidal silica Substances 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 7
- 238000007517 polishing process Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 6
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 6
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 6
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 6
- 150000007524 organic acids Chemical class 0.000 claims description 6
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 6
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 5
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 4
- 239000011975 tartaric acid Substances 0.000 claims description 4
- 235000002906 tartaric acid Nutrition 0.000 claims description 4
- 239000005711 Benzoic acid Substances 0.000 claims description 3
- 235000011054 acetic acid Nutrition 0.000 claims description 3
- 235000010233 benzoic acid Nutrition 0.000 claims description 3
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical class O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 3
- 239000004310 lactic acid Substances 0.000 claims description 3
- 235000014655 lactic acid Nutrition 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 235000019260 propionic acid Nutrition 0.000 claims description 3
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 3
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 13
- 230000003647 oxidation Effects 0.000 description 11
- 238000007254 oxidation reaction Methods 0.000 description 11
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- 239000002738 chelating agent Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 150000007942 carboxylates Chemical class 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- LLYCMZGLHLKPPU-UHFFFAOYSA-M perbromate Chemical compound [O-]Br(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-M 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000003082 abrasive agent Substances 0.000 description 3
- 239000008365 aqueous carrier Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 150000001413 amino acids Chemical class 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- PEYVWSJAZONVQK-UHFFFAOYSA-N hydroperoxy(oxo)borane Chemical compound OOB=O PEYVWSJAZONVQK-UHFFFAOYSA-N 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 150000002823 nitrates Chemical class 0.000 description 2
- 150000001451 organic peroxides Chemical class 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 2
- 125000000864 peroxy group Chemical group O(O*)* 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- TUSDEZXZIZRFGC-UHFFFAOYSA-N 1-O-galloyl-3,6-(R)-HHDP-beta-D-glucose Natural products OC1C(O2)COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC1C(O)C2OC(=O)C1=CC(O)=C(O)C(O)=C1 TUSDEZXZIZRFGC-UHFFFAOYSA-N 0.000 description 1
- PAOHAQSLJSMLAT-UHFFFAOYSA-N 1-butylperoxybutane Chemical compound CCCCOOCCCC PAOHAQSLJSMLAT-UHFFFAOYSA-N 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical class [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RGHNJXZEOKUKBD-SQOUGZDYSA-M D-gluconate Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O RGHNJXZEOKUKBD-SQOUGZDYSA-M 0.000 description 1
- 239000001263 FEMA 3042 Substances 0.000 description 1
- AEMRFAOFKBGASW-UHFFFAOYSA-M Glycolate Chemical compound OCC([O-])=O AEMRFAOFKBGASW-UHFFFAOYSA-M 0.000 description 1
- JVTAAEKCZFNVCJ-UHFFFAOYSA-M Lactate Chemical compound CC(O)C([O-])=O JVTAAEKCZFNVCJ-UHFFFAOYSA-M 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- LRBQNJMCXXYXIU-PPKXGCFTSA-N Penta-digallate-beta-D-glucose Natural products OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-PPKXGCFTSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052910 alkali metal silicate Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000001414 amino alcohols Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000002280 amphoteric surfactant Substances 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 239000012736 aqueous medium Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Chemical class [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 description 1
- 150000001728 carbonyl compounds Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical class [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 229940001468 citrate Drugs 0.000 description 1
- 150000001860 citric acid derivatives Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- QLBHNVFOQLIYTH-UHFFFAOYSA-L dipotassium;2-[2-[bis(carboxymethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [K+].[K+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O QLBHNVFOQLIYTH-UHFFFAOYSA-L 0.000 description 1
- 229940009662 edetate Drugs 0.000 description 1
- 229940058180 edetate dipotassium anhydrous Drugs 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229940050410 gluconate Drugs 0.000 description 1
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- ICIWUVCWSCSTAQ-UHFFFAOYSA-N iodic acid Chemical class OI(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229940001447 lactate Drugs 0.000 description 1
- 229940049920 malate Drugs 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-L malate(2-) Chemical compound [O-]C(=O)C(O)CC([O-])=O BJEPYKJPYRNKOW-UHFFFAOYSA-L 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 239000012702 metal oxide precursor Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 239000012285 osmium tetroxide Substances 0.000 description 1
- 229910000489 osmium tetroxide Inorganic materials 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000020477 pH reduction Effects 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- 150000003022 phthalic acids Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- -1 potassium ferricyanide Chemical compound 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000012925 reference material Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000007655 standard test method Methods 0.000 description 1
- 229940086735 succinate Drugs 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical compound [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Abstract
Description
Claims (39)
- (i)(a)8以上のモース硬さを有する第1の研磨粒子を5〜45wt%、(b)より小さな一次粒子の凝集体を含む三次元構造を有する第2の研磨粒子を1〜45wt%、及び(c)シリカを含む第3の研磨粒子を10〜90wt%含む研磨材と、
(ii)液体キャリヤーと
を含む、研磨用組成物。 - 前記第1の研磨粒子が#−アルミナ粒子である、請求項1に記載の研磨用組成物。
- 前記第2の研磨粒子がヒュームドアルミナ粒子である、請求項1に記載の研磨用組成物。
- 前記シリカがコロイド状シリカである、請求項1に記載の研磨用組成物。
- 前記液体キャリヤーが水を含む、請求項1に記載の研磨用組成物。
- 前記研磨材が、前記研磨用組成物の総質量に基づいて0.5〜20wt%の量で存在する、請求項1に記載の研磨用組成物。
- 前記研磨材が、前記研磨用組成物の総質量に基づいて1〜6wt%の量で存在する、請求項6に記載の研磨用組成物。
- 前記研磨材が、(a)前記第1の研磨粒子を15〜40wt%、(b)前記第2の研磨粒子を15〜40wt%、及び(c)前記第3の研磨粒子を20〜70wt%含む、請求項1に記載の研磨用組成物。
- 前記研磨材が、(a)前記第1の研磨粒子を15〜25wt%、(b)前記第2の研磨粒子を1〜10wt%、及び(c)前記第3の研磨粒子を70〜80wt%含む、請求項1に記載の研磨用組成物。
- 前記第1の研磨粒子が、1μm以下の平均粒子サイズを有する、請求項1に記載の研磨用組成物。
- 前記第1の研磨粒子が、400nm以下の平均粒子サイズを有する、請求項10に記載の研磨用組成物。
- 前記第2の研磨粒子が、200nm以下の平均凝集体粒子サイズを有する、請求項1に記載の研磨用組成物。
- 前記第3の研磨粒子が、150nm以下の平均粒子サイズを有する、請求項1に記載の研磨用組成物。
- 前記研磨用組成物が酸化剤をさらに含む、請求項1に記載の研磨用組成物。
- 前記酸化剤が過酸化水素を含む、請求項14に記載の研磨用組成物。
- 前記研磨用組成物が酸をさらに含む、請求項1に記載の研磨用組成物。
- 前記酸が有機酸である、請求項16に記載の研磨用組成物。
- 前記有機酸が、シュウ酸、マロン酸、酒石酸、酢酸、乳酸、プロピオン酸、フタル酸、安息香酸、クエン酸、コハク酸、それらの塩、及びそれらの組み合わせから成る群より選択される、請求項17に記載の研磨用組成物。
- 前記研磨用組成物が1〜4のpHを有する、請求項1に記載の研磨用組成物。
- (i)研磨用組成物を用意する工程であって、
(a)(I)8以上のモース硬さを有する第1の研磨粒子を5〜45wt%、(II)より小さな一次粒子の凝集体を含む三次元構造を有する第2の研磨粒子を1〜45wt%、及び(III)シリカを含む第3の研磨粒子を10〜90wt%含む研磨材と、
(b)液体キャリヤーと
を含む研磨用組成物を用意する工程、
(ii)表面を有する基板を用意する工程、及び
(iii)基板表面の少なくとも一部を研磨用組成物で削って基板を研磨する工程
を含む、基板の研磨方法。 - 前記第1の研磨粒子が#−アルミナ粒子である、請求項20に記載の方法。
- 前記第2の研磨粒子がヒュームドアルミナ粒子である、請求項20に記載の方法。
- 前記シリカがコロイド状シリカである、請求項20に記載の方法。
- 前記液体キャリヤーが水を含む、請求項20に記載の方法。
- 前記研磨材が、前記研磨用組成物の総質量に基づいて0.5〜20wt%の量で存在する、請求項20に記載の方法。
- 前記研磨材が、前記研磨用組成物の総質量に基づいて1〜6wt%の量で存在する、請求項25に記載の方法。
- 前記研磨材が、(a)前記第1の研磨粒子を15〜40wt%、(b)前記第2の研磨粒子を15〜40wt%、及び(c)前記第3の研磨粒子を20〜70wt%含む、請求項20に記載の方法。
- 前記研磨材が、(a)前記第1の研磨粒子を15〜25wt%、(b)前記第2の研磨粒子を1〜10wt%、及び(c)前記第3の研磨粒子を70〜80wt%含む、請求項20に記載の方法。
- 前記第1の研磨粒子が、1μm以下の平均粒子サイズを有する、請求項20に記載の方法。
- 前記第1の研磨粒子が、500nm以下の平均粒子サイズを有する、請求項29に記載の方法。
- 前記第2の研磨粒子が、200nm以下の平均凝集体粒子サイズを有する、請求項20に記載の方法。
- 前記第3の研磨粒子が、150nm以下の平均粒子サイズを有する、請求項20に記載の方法。
- 前記研磨用組成物が酸化剤をさらに含む、請求項20に記載の方法。
- 前記酸化剤が過酸化水素を含む、請求項33に記載の方法。
- 前記研磨用組成物が酸をさらに含む、請求項20に記載の方法。
- 前記酸が有機酸である、請求項35に記載の方法。
- 前記有機酸が、シュウ酸、マロン酸、酒石酸、酢酸、乳酸、プロピオン酸、フタル酸、安息香酸、クエン酸、コハク酸、それらの塩、及びそれらの組み合わせから成る群より選択される、請求項36に記載の方法。
- 前記研磨用組成物が1〜4のpHを有する、請求項20に記載の方法。
- 前記基板がニッケル−リン層を有する、請求項20に記載の方法。
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US10/364,243 US6896591B2 (en) | 2003-02-11 | 2003-02-11 | Mixed-abrasive polishing composition and method for using the same |
US10/364,243 | 2003-02-11 | ||
PCT/US2004/003053 WO2004072199A2 (en) | 2003-02-11 | 2004-02-04 | Mixed-abrasive polishing composition and method for using the same |
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EP (1) | EP1594934B1 (ja) |
JP (2) | JP4740110B2 (ja) |
KR (1) | KR101073800B1 (ja) |
CN (1) | CN100355846C (ja) |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012516911A (ja) * | 2009-02-03 | 2012-07-26 | キャボット マイクロエレクトロニクス コーポレイション | ニッケル−リンメモリーディスク用の研磨組成物 |
JP2014210322A (ja) * | 2013-04-19 | 2014-11-13 | 株式会社フジミインコーポレーテッド | 磁気ディスク基板用研磨組成物キット |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040162011A1 (en) * | 2002-08-02 | 2004-08-19 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing and production process of semiconductor device |
US20050090104A1 (en) * | 2003-10-27 | 2005-04-28 | Kai Yang | Slurry compositions for chemical mechanical polishing of copper and barrier films |
US20050121969A1 (en) * | 2003-12-04 | 2005-06-09 | Ismail Emesh | Lubricant for wafer polishing using a fixed abrasive pad |
US20050139119A1 (en) * | 2003-12-24 | 2005-06-30 | Rader W. S. | Polishing composition |
JP4249008B2 (ja) * | 2003-12-25 | 2009-04-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
JP2005244123A (ja) * | 2004-02-27 | 2005-09-08 | Fujimi Inc | 研磨用組成物 |
US20050279964A1 (en) * | 2004-06-17 | 2005-12-22 | Ming-Tseh Tsay | Chemical mechanical polishing slurry for polishing copper layer on a wafer |
US7524347B2 (en) * | 2004-10-28 | 2009-04-28 | Cabot Microelectronics Corporation | CMP composition comprising surfactant |
US20060289387A1 (en) * | 2005-06-23 | 2006-12-28 | Lombardi John L | Non-aqueous lapping composition and method using same |
US8062096B2 (en) * | 2005-06-30 | 2011-11-22 | Cabot Microelectronics Corporation | Use of CMP for aluminum mirror and solar cell fabrication |
JP2009509784A (ja) * | 2005-09-30 | 2009-03-12 | サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド | 研磨スラリー及び当該研磨スラリーを利用する方法 |
US7955519B2 (en) * | 2005-09-30 | 2011-06-07 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
JP2007123759A (ja) * | 2005-10-31 | 2007-05-17 | Nitta Haas Inc | 半導体研磨用組成物および研磨方法 |
US20080135520A1 (en) * | 2006-12-12 | 2008-06-12 | Tao Sun | Chemical composition for chemical mechanical planarization |
US9120960B2 (en) * | 2007-10-05 | 2015-09-01 | Saint-Gobain Ceramics & Plastics, Inc. | Composite slurries of nano silicon carbide and alumina |
CA2700408A1 (en) * | 2007-10-05 | 2009-04-09 | Saint-Gobain Ceramics & Plastics, Inc. | Improved silicon carbide particles, methods of fabrication, and methods using same |
EP2215175A1 (en) * | 2007-10-05 | 2010-08-11 | Saint-Gobain Ceramics & Plastics, Inc. | Polishing of sapphire with composite slurries |
GB2454343B (en) * | 2007-10-29 | 2012-07-11 | Kao Corp | Polishing composition for hard disk substrate |
JP2009164186A (ja) * | 2007-12-28 | 2009-07-23 | Fujimi Inc | 研磨用組成物 |
US7922926B2 (en) | 2008-01-08 | 2011-04-12 | Cabot Microelectronics Corporation | Composition and method for polishing nickel-phosphorous-coated aluminum hard disks |
KR100935897B1 (ko) * | 2008-02-14 | 2010-01-07 | 동의대학교 산학협력단 | 연마 방법 |
CN101239785B (zh) * | 2008-02-26 | 2010-11-17 | 孙韬 | 大屏幕薄膜晶体管模组减薄液的生产方法 |
US20100221982A1 (en) * | 2009-02-27 | 2010-09-02 | Illinois Tool Works Inc. | Kit having two types of clay |
US8585920B2 (en) | 2009-11-09 | 2013-11-19 | John L. Lombardi | Polishing composition and method using same |
CN102115633A (zh) * | 2009-12-30 | 2011-07-06 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
JP5979872B2 (ja) * | 2011-01-31 | 2016-08-31 | 花王株式会社 | 磁気ディスク基板の製造方法 |
US9039914B2 (en) | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
US8518135B1 (en) | 2012-08-27 | 2013-08-27 | Cabot Microelectronics Corporation | Polishing composition containing hybrid abrasive for nickel-phosphorous coated memory disks |
CN103254799A (zh) * | 2013-05-29 | 2013-08-21 | 陈玉祥 | 一种亲水金刚石悬浮研磨抛光液及其制备方法 |
US9340706B2 (en) * | 2013-10-10 | 2016-05-17 | Cabot Microelectronics Corporation | Mixed abrasive polishing compositions |
SG11201602877RA (en) * | 2013-10-18 | 2016-05-30 | Cabot Microelectronics Corp | Polishing composition and method for nickel-phosphorous coated memory disks |
US9909032B2 (en) * | 2014-01-15 | 2018-03-06 | Cabot Microelectronics Corporation | Composition and method for polishing memory hard disks |
US9303190B2 (en) | 2014-03-24 | 2016-04-05 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
US9127187B1 (en) | 2014-03-24 | 2015-09-08 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
US9401104B2 (en) * | 2014-05-05 | 2016-07-26 | Cabot Microelectronics Corporation | Polishing composition for edge roll-off improvement |
WO2018123875A1 (ja) * | 2016-12-26 | 2018-07-05 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
US10636701B2 (en) * | 2017-09-29 | 2020-04-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming semiconductor devices using multiple planarization processes |
KR102544609B1 (ko) * | 2017-11-30 | 2023-06-19 | 솔브레인 주식회사 | 텅스텐 막 연마 슬러리 조성물 |
JP2022523515A (ja) * | 2019-01-31 | 2022-04-25 | プレオン インコーポレイテッド | 硬質基板を研磨するためのマルチモーダルダイヤモンド研磨剤パッケージ又はスラリー |
US11597854B2 (en) * | 2019-07-16 | 2023-03-07 | Cmc Materials, Inc. | Method to increase barrier film removal rate in bulk tungsten slurry |
CN115093829A (zh) * | 2022-07-11 | 2022-09-23 | 浙江奥首材料科技有限公司 | 一种混合磨料、包含其的光学石英玻璃抛光液、制备方法及用途 |
US20240117220A1 (en) * | 2022-10-11 | 2024-04-11 | Cmc Materials Llc | Chemical-mechanical polishing composition for heavily-doped boron silicon films |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1088111A (ja) * | 1996-09-13 | 1998-04-07 | Fujimi Inkooporeetetsudo:Kk | 研磨用組成物 |
JP2000239652A (ja) * | 1999-02-24 | 2000-09-05 | Yamaguchi Seiken Kogyo Kk | 硬脆材料用精密研磨組成物及びそれを用いた硬脆材料の精密研磨方法 |
JP2001260005A (ja) * | 2000-03-21 | 2001-09-25 | Praxair St Technol Inc | 混成研磨用スラリー |
JP2002141314A (ja) * | 2000-08-21 | 2002-05-17 | Toshiba Corp | 化学機械研磨用スラリおよび半導体装置の製造方法 |
JP2004193495A (ja) * | 2002-12-13 | 2004-07-08 | Toshiba Corp | 化学的機械的研磨用スラリーおよびこれを用いた半導体装置の製造方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE416643B (sv) * | 1973-12-17 | 1981-01-26 | Norton Co | Slipmedel omfattande en sammansmelt, stelnad och krossad blandning av oxider av aluminium, zirkonium och krom |
US5264010A (en) * | 1992-04-27 | 1993-11-23 | Rodel, Inc. | Compositions and methods for polishing and planarizing surfaces |
US5549962A (en) * | 1993-06-30 | 1996-08-27 | Minnesota Mining And Manufacturing Company | Precisely shaped particles and method of making the same |
US5693239A (en) | 1995-10-10 | 1997-12-02 | Rodel, Inc. | Polishing slurries comprising two abrasive components and methods for their use |
EP0786504A3 (en) | 1996-01-29 | 1998-05-20 | Fujimi Incorporated | Polishing composition |
US5942015A (en) * | 1997-09-16 | 1999-08-24 | 3M Innovative Properties Company | Abrasive slurries and abrasive articles comprising multiple abrasive particle grades |
US5989301A (en) * | 1998-02-18 | 1999-11-23 | Saint-Gobain Industrial Ceramics, Inc. | Optical polishing formulation |
JP2000160139A (ja) * | 1998-12-01 | 2000-06-13 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
KR20010046395A (ko) * | 1999-11-12 | 2001-06-15 | 안복현 | 연마용 조성물 |
US6293848B1 (en) | 1999-11-15 | 2001-09-25 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
JP2001187877A (ja) * | 1999-12-28 | 2001-07-10 | Nec Corp | 化学的機械的研磨用スラリー |
JP4094801B2 (ja) * | 2000-07-31 | 2008-06-04 | 株式会社ノリタケカンパニーリミテド | 磁気ディスク基板用テクスチャリング加工液 |
KR100481651B1 (ko) | 2000-08-21 | 2005-04-08 | 가부시끼가이샤 도시바 | 화학 기계 연마용 슬러리 및 반도체 장치의 제조 방법 |
JP4009986B2 (ja) * | 2000-11-29 | 2007-11-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物、およびそれを用いてメモリーハードディスクを研磨する研磨方法 |
JP4439755B2 (ja) * | 2001-03-29 | 2010-03-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いたメモリーハードディスクの製造方法 |
JP4637398B2 (ja) * | 2001-04-18 | 2011-02-23 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
JP4231632B2 (ja) * | 2001-04-27 | 2009-03-04 | 花王株式会社 | 研磨液組成物 |
-
2003
- 2003-02-11 US US10/364,243 patent/US6896591B2/en not_active Expired - Lifetime
-
2004
- 2004-02-04 KR KR1020057014686A patent/KR101073800B1/ko not_active IP Right Cessation
- 2004-02-04 JP JP2006503285A patent/JP4740110B2/ja not_active Expired - Lifetime
- 2004-02-04 WO PCT/US2004/003053 patent/WO2004072199A2/en active Application Filing
- 2004-02-04 CN CNB2004800034572A patent/CN100355846C/zh not_active Expired - Fee Related
- 2004-02-04 EP EP04708120.3A patent/EP1594934B1/en not_active Expired - Lifetime
- 2004-02-09 TW TW093102924A patent/TWI267540B/zh active
-
2011
- 2011-02-10 JP JP2011027371A patent/JP5563496B2/ja not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1088111A (ja) * | 1996-09-13 | 1998-04-07 | Fujimi Inkooporeetetsudo:Kk | 研磨用組成物 |
JP2000239652A (ja) * | 1999-02-24 | 2000-09-05 | Yamaguchi Seiken Kogyo Kk | 硬脆材料用精密研磨組成物及びそれを用いた硬脆材料の精密研磨方法 |
JP2001260005A (ja) * | 2000-03-21 | 2001-09-25 | Praxair St Technol Inc | 混成研磨用スラリー |
JP2002141314A (ja) * | 2000-08-21 | 2002-05-17 | Toshiba Corp | 化学機械研磨用スラリおよび半導体装置の製造方法 |
JP2004193495A (ja) * | 2002-12-13 | 2004-07-08 | Toshiba Corp | 化学的機械的研磨用スラリーおよびこれを用いた半導体装置の製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012516911A (ja) * | 2009-02-03 | 2012-07-26 | キャボット マイクロエレクトロニクス コーポレイション | ニッケル−リンメモリーディスク用の研磨組成物 |
JP2014210322A (ja) * | 2013-04-19 | 2014-11-13 | 株式会社フジミインコーポレーテッド | 磁気ディスク基板用研磨組成物キット |
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CN100355846C (zh) | 2007-12-19 |
JP4740110B2 (ja) | 2011-08-03 |
EP1594934B1 (en) | 2017-03-22 |
KR101073800B1 (ko) | 2011-10-13 |
JP2011126010A (ja) | 2011-06-30 |
US20040157535A1 (en) | 2004-08-12 |
TWI267540B (en) | 2006-12-01 |
CN1748009A (zh) | 2006-03-15 |
WO2004072199A3 (en) | 2004-12-02 |
US6896591B2 (en) | 2005-05-24 |
EP1594934A2 (en) | 2005-11-16 |
JP5563496B2 (ja) | 2014-07-30 |
WO2004072199A2 (en) | 2004-08-26 |
KR20050098311A (ko) | 2005-10-11 |
TW200422365A (en) | 2004-11-01 |
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