JP2006517737A - 集積回路の金属層の研磨装置および２段階研磨方法 - Google Patents

集積回路の金属層の研磨装置および２段階研磨方法 Download PDF

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Publication number
JP2006517737A
JP2006517737A JP2006502538A JP2006502538A JP2006517737A JP 2006517737 A JP2006517737 A JP 2006517737A JP 2006502538 A JP2006502538 A JP 2006502538A JP 2006502538 A JP2006502538 A JP 2006502538A JP 2006517737 A JP2006517737 A JP 2006517737A
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JP
Japan
Prior art keywords
polishing
etchant
metal
period
prefabricated
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JP2006502538A
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English (en)
Japanese (ja)
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JP2006517737A5 (https=
Inventor
ベト、グエン、ホアン
ロエル、ダーメン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
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Koninklijke Philips Electronics NV
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Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JP2006517737A publication Critical patent/JP2006517737A/ja
Publication of JP2006517737A5 publication Critical patent/JP2006517737A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

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  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
JP2006502538A 2003-02-11 2004-01-23 集積回路の金属層の研磨装置および２段階研磨方法 Withdrawn JP2006517737A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP03100284 2003-02-11
PCT/IB2004/050047 WO2004073060A1 (en) 2003-02-11 2004-01-23 Polishing apparatus and two-step method of polishing a metal layer of an integrated circuit

Publications (2)

Publication Number Publication Date
JP2006517737A true JP2006517737A (ja) 2006-07-27
JP2006517737A5 JP2006517737A5 (https=) 2007-03-08

Family

ID=32865028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006502538A Withdrawn JP2006517737A (ja) 2003-02-11 2004-01-23 集積回路の金属層の研磨装置および２段階研磨方法

Country Status (7)

Country Link
US (1) US7709387B2 (https=)
EP (1) EP1595286A1 (https=)
JP (1) JP2006517737A (https=)
KR (1) KR20050094481A (https=)
CN (1) CN100568485C (https=)
TW (1) TWI324798B (https=)
WO (1) WO2004073060A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021090040A (ja) * 2019-11-21 2021-06-10 東京応化工業株式会社 エッチング液、エッチング液の製造方法、被処理体の処理方法、及びルテニウム含有配線の製造方法
US11898081B2 (en) 2019-11-21 2024-02-13 Tokyo Ohka Kogyo Co., Ltd. Ruthenium-etching solution, method for manufacturing ruthenium-etching solution, method for processing object to be processed, and method for manufacturing ruthenium-containing wiring

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006040585B4 (de) * 2006-08-30 2013-02-07 Infineon Technologies Ag Verfahren zum Auffüllen eines Grabens in einem Halbleiterprodukt
CN103985668B (zh) * 2014-05-13 2018-02-23 上海集成电路研发中心有限公司 铜互连的制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5854140A (en) * 1996-12-13 1998-12-29 Siemens Aktiengesellschaft Method of making an aluminum contact
US5934980A (en) * 1997-06-09 1999-08-10 Micron Technology, Inc. Method of chemical mechanical polishing
JP4095731B2 (ja) * 1998-11-09 2008-06-04 株式会社ルネサステクノロジ 半導体装置の製造方法及び半導体装置
JP3293783B2 (ja) * 1998-11-10 2002-06-17 日本電気株式会社 半導体装置の製造方法
JP2001085378A (ja) 1999-09-13 2001-03-30 Sony Corp 半導体装置およびその製造方法
JP4264781B2 (ja) 1999-09-20 2009-05-20 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
US6436829B1 (en) * 2000-08-04 2002-08-20 Agere Systems Guardian Corp. Two phase chemical/mechanical polishing process for tungsten layers
US20020098673A1 (en) * 2001-01-19 2002-07-25 Ming-Shi Yeh Method for fabricating metal interconnects
US6660627B2 (en) * 2002-03-25 2003-12-09 United Microelectronics Corp. Method for planarization of wafers with high selectivities

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021090040A (ja) * 2019-11-21 2021-06-10 東京応化工業株式会社 エッチング液、エッチング液の製造方法、被処理体の処理方法、及びルテニウム含有配線の製造方法
JP2021122075A (ja) * 2019-11-21 2021-08-26 東京応化工業株式会社 エッチング液、エッチング液の製造方法、被処理体の処理方法、及びルテニウム含有配線の製造方法
US11898081B2 (en) 2019-11-21 2024-02-13 Tokyo Ohka Kogyo Co., Ltd. Ruthenium-etching solution, method for manufacturing ruthenium-etching solution, method for processing object to be processed, and method for manufacturing ruthenium-containing wiring
JP7624882B2 (ja) 2019-11-21 2025-01-31 東京応化工業株式会社 エッチング液、エッチング液の製造方法、被処理体の処理方法、及びルテニウム含有配線の製造方法
KR102932627B1 (ko) 2019-11-21 2026-02-27 도오꾜오까고오교 가부시끼가이샤 에칭액, 에칭액의 제조 방법, 피처리체의 처리 방법, 및 루테늄 함유 배선의 제조 방법

Also Published As

Publication number Publication date
CN100568485C (zh) 2009-12-09
TW200507093A (en) 2005-02-16
CN1748302A (zh) 2006-03-15
WO2004073060A1 (en) 2004-08-26
US7709387B2 (en) 2010-05-04
US20060134915A1 (en) 2006-06-22
TWI324798B (en) 2010-05-11
EP1595286A1 (en) 2005-11-16
KR20050094481A (ko) 2005-09-27

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