KR20050094481A - 집적 회로 제조 방법 및 연마 장치 - Google Patents

집적 회로 제조 방법 및 연마 장치 Download PDF

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Publication number
KR20050094481A
KR20050094481A KR1020057014701A KR20057014701A KR20050094481A KR 20050094481 A KR20050094481 A KR 20050094481A KR 1020057014701 A KR1020057014701 A KR 1020057014701A KR 20057014701 A KR20057014701 A KR 20057014701A KR 20050094481 A KR20050094481 A KR 20050094481A
Authority
KR
South Korea
Prior art keywords
polishing
etchant
metal
integrated circuit
time period
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020057014701A
Other languages
English (en)
Korean (ko)
Inventor
호앙 비에트 엔구옌
로엘 다아멘
Original Assignee
코닌클리즈케 필립스 일렉트로닉스 엔.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 코닌클리즈케 필립스 일렉트로닉스 엔.브이. filed Critical 코닌클리즈케 필립스 일렉트로닉스 엔.브이.
Publication of KR20050094481A publication Critical patent/KR20050094481A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
KR1020057014701A 2003-02-11 2004-01-23 집적 회로 제조 방법 및 연마 장치 Ceased KR20050094481A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP03100284.3 2003-02-11
EP03100284 2003-02-11

Publications (1)

Publication Number Publication Date
KR20050094481A true KR20050094481A (ko) 2005-09-27

Family

ID=32865028

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057014701A Ceased KR20050094481A (ko) 2003-02-11 2004-01-23 집적 회로 제조 방법 및 연마 장치

Country Status (7)

Country Link
US (1) US7709387B2 (https=)
EP (1) EP1595286A1 (https=)
JP (1) JP2006517737A (https=)
KR (1) KR20050094481A (https=)
CN (1) CN100568485C (https=)
TW (1) TWI324798B (https=)
WO (1) WO2004073060A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006040585B4 (de) * 2006-08-30 2013-02-07 Infineon Technologies Ag Verfahren zum Auffüllen eines Grabens in einem Halbleiterprodukt
CN103985668B (zh) * 2014-05-13 2018-02-23 上海集成电路研发中心有限公司 铜互连的制备方法
US11898081B2 (en) 2019-11-21 2024-02-13 Tokyo Ohka Kogyo Co., Ltd. Ruthenium-etching solution, method for manufacturing ruthenium-etching solution, method for processing object to be processed, and method for manufacturing ruthenium-containing wiring
JP6895577B2 (ja) * 2019-11-21 2021-06-30 東京応化工業株式会社 エッチング液、エッチング液の製造方法、被処理体の処理方法、及びルテニウム含有配線の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5854140A (en) * 1996-12-13 1998-12-29 Siemens Aktiengesellschaft Method of making an aluminum contact
US5934980A (en) * 1997-06-09 1999-08-10 Micron Technology, Inc. Method of chemical mechanical polishing
JP4095731B2 (ja) * 1998-11-09 2008-06-04 株式会社ルネサステクノロジ 半導体装置の製造方法及び半導体装置
JP3293783B2 (ja) * 1998-11-10 2002-06-17 日本電気株式会社 半導体装置の製造方法
JP2001085378A (ja) 1999-09-13 2001-03-30 Sony Corp 半導体装置およびその製造方法
JP4264781B2 (ja) 1999-09-20 2009-05-20 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
US6436829B1 (en) * 2000-08-04 2002-08-20 Agere Systems Guardian Corp. Two phase chemical/mechanical polishing process for tungsten layers
US20020098673A1 (en) * 2001-01-19 2002-07-25 Ming-Shi Yeh Method for fabricating metal interconnects
US6660627B2 (en) * 2002-03-25 2003-12-09 United Microelectronics Corp. Method for planarization of wafers with high selectivities

Also Published As

Publication number Publication date
CN100568485C (zh) 2009-12-09
TW200507093A (en) 2005-02-16
CN1748302A (zh) 2006-03-15
WO2004073060A1 (en) 2004-08-26
US7709387B2 (en) 2010-05-04
US20060134915A1 (en) 2006-06-22
TWI324798B (en) 2010-05-11
JP2006517737A (ja) 2006-07-27
EP1595286A1 (en) 2005-11-16

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N231 Notification of change of applicant
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PE0902 Notice of grounds for rejection

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E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000