JP2006517737A - 集積回路の金属層の研磨装置および２段階研磨方法 - Google Patents

集積回路の金属層の研磨装置および２段階研磨方法 Download PDF

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JP2006517737A
JP2006517737A JP2006502538A JP2006502538A JP2006517737A JP 2006517737 A JP2006517737 A JP 2006517737A JP 2006502538 A JP2006502538 A JP 2006502538A JP 2006502538 A JP2006502538 A JP 2006502538A JP 2006517737 A JP2006517737 A JP 2006517737A
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polishing
etchant
metal
period
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Japanese (ja)
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JP2006517737A5 (enExample
Inventor
ベト、グエン、ホアン
ロエル、ダーメン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
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Koninklijke Philips Electronics NV
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Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JP2006517737A publication Critical patent/JP2006517737A/ja
Publication of JP2006517737A5 publication Critical patent/JP2006517737A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
JP2006502538A 2003-02-11 2004-01-23 集積回路の金属層の研磨装置および２段階研磨方法 Withdrawn JP2006517737A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP03100284 2003-02-11
PCT/IB2004/050047 WO2004073060A1 (en) 2003-02-11 2004-01-23 Polishing apparatus and two-step method of polishing a metal layer of an integrated circuit

Publications (2)

Publication Number Publication Date
JP2006517737A true JP2006517737A (ja) 2006-07-27
JP2006517737A5 JP2006517737A5 (enExample) 2007-03-08

Family

ID=32865028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006502538A Withdrawn JP2006517737A (ja) 2003-02-11 2004-01-23 集積回路の金属層の研磨装置および２段階研磨方法

Country Status (7)

Country Link
US (1) US7709387B2 (enExample)
EP (1) EP1595286A1 (enExample)
JP (1) JP2006517737A (enExample)
KR (1) KR20050094481A (enExample)
CN (1) CN100568485C (enExample)
TW (1) TWI324798B (enExample)
WO (1) WO2004073060A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021090040A (ja) * 2019-11-21 2021-06-10 東京応化工業株式会社 エッチング液、エッチング液の製造方法、被処理体の処理方法、及びルテニウム含有配線の製造方法
US11898081B2 (en) 2019-11-21 2024-02-13 Tokyo Ohka Kogyo Co., Ltd. Ruthenium-etching solution, method for manufacturing ruthenium-etching solution, method for processing object to be processed, and method for manufacturing ruthenium-containing wiring

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006040585B4 (de) * 2006-08-30 2013-02-07 Infineon Technologies Ag Verfahren zum Auffüllen eines Grabens in einem Halbleiterprodukt
CN103985668B (zh) * 2014-05-13 2018-02-23 上海集成电路研发中心有限公司 铜互连的制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5854140A (en) * 1996-12-13 1998-12-29 Siemens Aktiengesellschaft Method of making an aluminum contact
US5934980A (en) * 1997-06-09 1999-08-10 Micron Technology, Inc. Method of chemical mechanical polishing
JP4095731B2 (ja) * 1998-11-09 2008-06-04 株式会社ルネサステクノロジ 半導体装置の製造方法及び半導体装置
JP3293783B2 (ja) * 1998-11-10 2002-06-17 日本電気株式会社 半導体装置の製造方法
JP2001085378A (ja) * 1999-09-13 2001-03-30 Sony Corp 半導体装置およびその製造方法
JP4264781B2 (ja) 1999-09-20 2009-05-20 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
US6436829B1 (en) * 2000-08-04 2002-08-20 Agere Systems Guardian Corp. Two phase chemical/mechanical polishing process for tungsten layers
US20020098673A1 (en) * 2001-01-19 2002-07-25 Ming-Shi Yeh Method for fabricating metal interconnects
US6660627B2 (en) * 2002-03-25 2003-12-09 United Microelectronics Corp. Method for planarization of wafers with high selectivities

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021090040A (ja) * 2019-11-21 2021-06-10 東京応化工業株式会社 エッチング液、エッチング液の製造方法、被処理体の処理方法、及びルテニウム含有配線の製造方法
JP2021122075A (ja) * 2019-11-21 2021-08-26 東京応化工業株式会社 エッチング液、エッチング液の製造方法、被処理体の処理方法、及びルテニウム含有配線の製造方法
US11898081B2 (en) 2019-11-21 2024-02-13 Tokyo Ohka Kogyo Co., Ltd. Ruthenium-etching solution, method for manufacturing ruthenium-etching solution, method for processing object to be processed, and method for manufacturing ruthenium-containing wiring
JP7624882B2 (ja) 2019-11-21 2025-01-31 東京応化工業株式会社 エッチング液、エッチング液の製造方法、被処理体の処理方法、及びルテニウム含有配線の製造方法

Also Published As

Publication number Publication date
TWI324798B (en) 2010-05-11
KR20050094481A (ko) 2005-09-27
CN100568485C (zh) 2009-12-09
CN1748302A (zh) 2006-03-15
EP1595286A1 (en) 2005-11-16
TW200507093A (en) 2005-02-16
US20060134915A1 (en) 2006-06-22
US7709387B2 (en) 2010-05-04
WO2004073060A1 (en) 2004-08-26

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