JP2006517737A5 - - Google Patents

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Publication number
JP2006517737A5
JP2006517737A5 JP2006502538A JP2006502538A JP2006517737A5 JP 2006517737 A5 JP2006517737 A5 JP 2006517737A5 JP 2006502538 A JP2006502538 A JP 2006502538A JP 2006502538 A JP2006502538 A JP 2006502538A JP 2006517737 A5 JP2006517737 A5 JP 2006517737A5
Authority
JP
Japan
Prior art keywords
polishing
period
etching agent
prefabricated
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006502538A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006517737A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/IB2004/050047 external-priority patent/WO2004073060A1/en
Publication of JP2006517737A publication Critical patent/JP2006517737A/ja
Publication of JP2006517737A5 publication Critical patent/JP2006517737A5/ja
Withdrawn legal-status Critical Current

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JP2006502538A 2003-02-11 2004-01-23 集積回路の金属層の研磨装置および２段階研磨方法 Withdrawn JP2006517737A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP03100284 2003-02-11
PCT/IB2004/050047 WO2004073060A1 (en) 2003-02-11 2004-01-23 Polishing apparatus and two-step method of polishing a metal layer of an integrated circuit

Publications (2)

Publication Number Publication Date
JP2006517737A JP2006517737A (ja) 2006-07-27
JP2006517737A5 true JP2006517737A5 (enExample) 2007-03-08

Family

ID=32865028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006502538A Withdrawn JP2006517737A (ja) 2003-02-11 2004-01-23 集積回路の金属層の研磨装置および２段階研磨方法

Country Status (7)

Country Link
US (1) US7709387B2 (enExample)
EP (1) EP1595286A1 (enExample)
JP (1) JP2006517737A (enExample)
KR (1) KR20050094481A (enExample)
CN (1) CN100568485C (enExample)
TW (1) TWI324798B (enExample)
WO (1) WO2004073060A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006040585B4 (de) * 2006-08-30 2013-02-07 Infineon Technologies Ag Verfahren zum Auffüllen eines Grabens in einem Halbleiterprodukt
CN103985668B (zh) * 2014-05-13 2018-02-23 上海集成电路研发中心有限公司 铜互连的制备方法
US11898081B2 (en) 2019-11-21 2024-02-13 Tokyo Ohka Kogyo Co., Ltd. Ruthenium-etching solution, method for manufacturing ruthenium-etching solution, method for processing object to be processed, and method for manufacturing ruthenium-containing wiring
JP6895577B2 (ja) * 2019-11-21 2021-06-30 東京応化工業株式会社 エッチング液、エッチング液の製造方法、被処理体の処理方法、及びルテニウム含有配線の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5854140A (en) * 1996-12-13 1998-12-29 Siemens Aktiengesellschaft Method of making an aluminum contact
US5934980A (en) * 1997-06-09 1999-08-10 Micron Technology, Inc. Method of chemical mechanical polishing
JP4095731B2 (ja) * 1998-11-09 2008-06-04 株式会社ルネサステクノロジ 半導体装置の製造方法及び半導体装置
JP3293783B2 (ja) * 1998-11-10 2002-06-17 日本電気株式会社 半導体装置の製造方法
JP2001085378A (ja) * 1999-09-13 2001-03-30 Sony Corp 半導体装置およびその製造方法
JP4264781B2 (ja) * 1999-09-20 2009-05-20 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
US6436829B1 (en) * 2000-08-04 2002-08-20 Agere Systems Guardian Corp. Two phase chemical/mechanical polishing process for tungsten layers
US20020098673A1 (en) * 2001-01-19 2002-07-25 Ming-Shi Yeh Method for fabricating metal interconnects
US6660627B2 (en) * 2002-03-25 2003-12-09 United Microelectronics Corp. Method for planarization of wafers with high selectivities

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