JP2006503166A - 熱軟化熱伝導性組成物およびその調製方法 - Google Patents
熱軟化熱伝導性組成物およびその調製方法 Download PDFInfo
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- JP2006503166A JP2006503166A JP2004546727A JP2004546727A JP2006503166A JP 2006503166 A JP2006503166 A JP 2006503166A JP 2004546727 A JP2004546727 A JP 2004546727A JP 2004546727 A JP2004546727 A JP 2004546727A JP 2006503166 A JP2006503166 A JP 2006503166A
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- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- MSRJTTSHWYDFIU-UHFFFAOYSA-N octyltriethoxysilane Chemical compound CCCCCCCC[Si](OCC)(OCC)OCC MSRJTTSHWYDFIU-UHFFFAOYSA-N 0.000 description 1
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- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
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- 229910052717 sulfur Inorganic materials 0.000 description 1
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- 238000010345 tape casting Methods 0.000 description 1
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Abstract
Description
B.H.Copely、修士論文MS Thesis、University of Minnesota、 1984 Wengorvius, J.H.、Burnell, T.B.、Zumbrum, M.A.、Krenceski,M.A.、Polym. Preprints 1998、39(1)、512
「A」および「an」の各々は、1個またはそれ以上を意味する。
本発明はHSTC組成物に関する。HSTC組成物は、
(A)シリコーン樹脂を含む母材と、
(B)熱伝導性充填剤と、
任意選択的に(C)処理剤と、
任意選択的に(D)酸化防止剤とを含む。
シリコーン樹脂は当技術分野に既知であり、市場で入手可能である。シリコーン樹脂は、組成物に組成物の4〜60%の量加えることができる。シリコーン樹脂は、DT、MDT、DTQ、MQ、MDQ、MDTQ、またはMTQ樹脂、あるいはDTまたはMQ樹脂など、M、D、T、Qユニットの組合せを含むことができる。
(R1R2SiO2/2)a(R3SiO3/2)b
を含む樹脂で例示される。
(R1 2SiO2/2)a(R2 2SiO2/2)b(R1SiO3/2)a(R2SiO3/2)b(式中、R1、R2、a、bは上述の通りである)を有することができる。あるいは、この式において、各R1はアルキル基とすることができ、各R2は芳香族基とすることができる。
(R1R2R3SiO1/2)c(SiO4/2)d (式中、R1、R2、R3、は上述の通りであり、cは1〜100であり、dは1〜100であり、dに対するcの平均比率は0.65〜1.9である)の樹脂によって例示される。
(R1R2R3SiO1/2)2(R1R2SiO2/2)e(式中、R1、R2、R3、は上述の通りであり、eは5〜800であり、あるいは50〜200である)のポリマーによって例示される。
成分(B)は熱伝導性充填剤である。成分(B)は成分(A)の中に分散される。組成物中の成分(B)の量は、成分(A)に選択した材料、成分(B)に選択した材料、および組成物の軟化温度を含む様々な要因に依存する。成分(B)の量は、組成物全体の少なくとも40%、あるいは組成物全体の少なくとも50%、あるいは組成物全体の少なくとも80%、あるいは組成物全体の少なくとも85%とすることができる。成分(B)の量は、組成物の96%まで、あるいは95%までとすることができる。成分(B)の量があまり少ないと、組成物はある用途において十分な熱伝導性を持たないであろう。
熱伝導性充填剤である成分(B)は、熱伝導性充填剤に加えて、または熱伝導性充填剤の一部の替わりに、任意選択的に強化充填剤を含むことができる。強化充填剤は、破砕したKEVLAR(登録商標)などの破砕したファイバーとすることができる。理論に拘束されることは望まないが、破砕したKEVLAR(登録商標)は強度および熱膨張係数(CTE)を向上させるものと考えられる。また、強化充填剤は成分(C)で処理することができる。
成分(A)は、組成物が室温で固体として取り扱うことができ、電子デバイスの組立て温度またはそれを超える温度で変形可能であるように選択される。
上述のHSTC組成物は熱界面材料(TIM)などの界面材料として使用することができる。界面材料は任意の都合のよい形態を有することができ、当業者であれば、成分(A)および他の成分を適切に選択することによって形態を制御することが可能であろう。HSTC組成物は環境条件の下で安定な形に処方することができる。HSTC組成物は環境条件下で自立型に処方することができる。HSTC組成物は、任意選択的にパッド、錠剤、シート、またはテープなどの平坦な部材として提供することができる。あるいは、HSTC組成物は、半球状の小塊、凸状部材、ピラミッド、または円錐形として提供することができる。理論に拘束されることは望まないが、成分(A)は環境条件下でHSTC組成物を粘着性のある固体にすることができ、粘着性は基板へのHSTC組成物の貼付に有利であろうと考えられる。
(a)電子部品と、
(b)界面材料と、
(c)ヒートシンクと
を含む製品に関し、界面材料は電子部品の表面からヒートシンクの表面へ展延する熱通路に沿って配置され、界面材料は上述の組成物を含む。
(a)ヒートスプレッダと、
(b)ヒートスプレッダ表面上の界面材料と
を含む製品に関し、界面材料およびヒートスプレッダは電子部品とヒートシンクとの間に熱伝導通路の一部を含むように構成され、界面材料は上述の組成物を含む。
熱界面材料の熱インピーダンス測定はHolometrix Microflash 300装置(Holometrix Micromet、Bedford、MA、現在NETZSCH Instruments, Inc.)で行われる。サンプル調製に使用するためのシリコンウェーハはSan Jose、CAのAddison Engineering, Inc.から入手する。シリコンウェーハは8±0.13ミリメートル(mm)平方の基板に切り分け、Nashua、NHのSilicon Senseで脱イオン水洗浄する。
温度の関数としての組成物の複合粘度測定はPiscataway、NJ、USAのRheometric Scientific製Advanced Rheometric Expansion System (ARES) Rheometerで測定される。データは、組成物を25mmの平行なプレートの間で、0.5%の動的応力、周波数1ラジアン/秒、および冷却速度2℃/分の下で、90〜30℃に冷却することによって記録する。
式、(Ph2SiO2/2)19(Me2SiO2/2)19(PhSiO3/2)37(MeSiO3/2)25のシリコーン樹脂を、樹脂と充填剤を80℃に加熱し、遠心混合することによって、Al2O3充填剤(Showa-Denko K.K.製のCB-A20SとAl-43-Me酸化アルミニウム充填剤の2:1混合物)と混合する。混合物は85.65重量%の充填剤充填量である。
式、(Ph2SiO2/2)19(Me2SiO2/2)19(PhSiO3/2)37(MeSiO3/2)25のシリコーン樹脂を、樹脂と充填剤を80℃に加熱し、遠心混合することによって、Al2O3充填剤(Showa-Denko K.K.製のCB-A20SとAL-43-Me酸化アルミニウム充填剤の2:1混合物)と混合する。混合物は88.08重量%の充填剤充填量である。
(i)(CH3)3SiO1/2シロキサンユニットとSiO4/2シロキサンユニットからなるオルガノポリシロキサン樹脂(樹脂は数平均分子量が2,600であり、SiO4/2ユニットに対する(CH3)3SiO1/2ユニットのモル比が0.9:1であり、樹脂は1重量%未満のケイ素結合ヒドロキシル基を含む)61.08重量%と、(ii)25℃で約0.3〜0.6パスカル・秒(Pa・s)の粘度を有するジメチルビニルシロキシ末端のポリジメチルシロキサン38.92重量%とからなるシリコーン樹脂/シリコーンポリマー混合物をこの実施例の母材として使用する。上述の樹脂/ポリマー混合物を、樹脂と充填剤を80℃に加熱し、遠心混合することによって、Al2O3充填剤(Showa-Denko K.K.製のCB-A20SとAL-43-Me酸化アルミニウム充填剤の2:1混合物)および充填剤処理剤としてステアリン酸(Aldrich Chemical Company)に混合する。混合物は、88.08重量%の充填剤、0.6重量%のステアリン酸、および11.32重量%の母材を含む。
式、(Ph2SiO2/2)19(Me2SiO2/2)19(PhSiO3/2)37(MeSiO3/2)25のシリコーン樹脂を、樹脂と充填剤を100℃に加熱し、遠心混合することによって、窒化ホウ素充填剤(Advanced Ceramics Corporation製PT350S)と混合する。混合物は54.87重量%の充填剤充填量である。
101 基板
102 HSTC組成物の層
103 剥離ライナー
200 デバイス
201 ヒートシンク
202 第2の熱的界面材料(TIM2)
203 電子部品
204 基板
205 半田ボール
206 第1の熱的界面材料(TIM1)
207 金属カバー
208 矢で表された熱通路
209 チップアンダーフィル
210 パッド
211 半田ボールアレイ
Claims (21)
- (A)(i)組成物の重量に対して4〜60%のシリコーン樹脂と、
(ii)組成物の重量に対して0〜35%のシリコーンポリマーと
を含む母材と、
(B)組成物の重量に対して40〜96%の熱伝導性充填剤と、
(C)組成物の重量に対して0〜5%の処理剤と、
(D)組成物の重量に対して0〜1%の酸化防止剤と
を含む組成物。 - 成分(i)がDT樹脂、MQ樹脂、またはその組合せを含む請求項1に記載の組成物。
- 成分(i)が、(R1R2SiO2/2)a(R3SiO3/2)bおよび(R1 2SiO2/2)a(R2 2SiO2/2)b(R1SiO3/2)c(R2SiO3/2)d(式中、
各R1は独立にヒドロキシル基または有機基を表し、
各R2は独立にヒドロキシル基または有機基を表し、
各R3は独立にヒドロキシル基または有機基を表し、
aは少なくとも1であり、
aは200までであり、
bは少なくとも1であり、
bは100までであり、
cは少なくとも1であり、
cは100までであり、
dは少なくとも1であり、
dは100までである)
から選択されるDT樹脂を含む請求項1に記載の組成物。 - 成分(i)が、式(R1R2R3SiO1/2)c(SiO4/2)d
(各R1は独立にヒドロキシル基または有機基を表し、
各R2は独立にヒドロキシル基または有機基を表し、
各R3は独立にヒドロキシル基または有機基を表し、
cは少なくとも1であり、
cは100までであり、
dは少なくとも1であり、
dは100までであり、
c/dの平均比は0.65〜1.9である)
のMQ樹脂を含む請求項1に記載の組成物。 - 成分(ii)が存在し、式(R1R2R3SiO1/2)2(R1R2SiO2/2)e(式中、
各R1は独立にヒドロキシル基または有機基を表し、
各R2は独立にヒドロキシル基または有機基を表し、
各R3は独立にヒドロキシル基または有機基を表し、
eは少なくとも5であり、
eは800までである)を有する請求項1に記載の組成物。 - 成分(B)が、窒化アルミニウム、酸化アルミニウム、チタン酸バリウム、酸化ベリリウム、窒化ホウ素、ダイヤモンド、グラファイト、酸化マグネシウム、金属粒子、シリコンカーバイド、タングステンカーバイド、酸化亜鉛、またはその組合せを含む請求項1に記載の組成物。
- (E)抑制剤、(F)有機官能性シリコーンワックス、シリコーン-有機物ブロックコポリマー、またはその組合せ、(G)ビヒクル、(H)湿潤剤、(I)消泡剤、(J)顔料、(K)難燃剤、(L)スペーサー、(M)低融点金属充填剤、(N)強化充填剤、またはその組合せから選択される任意選択的な成分をさらに含む請求項1に記載の組成物。
- (I)請求項1に記載の組成物を含む界面材料であって、前記組成物が、平坦な部材、半球状の小塊、凸状部材、ピラミッド、または円錐形として形成される界面材料。
- 前記組成物が、基板表面上にコーティングされる請求項8に記載の界面材料。
- 前記基板が、金属箔、穴あけされた金属箔、ポリアミドシート、ポリイミドシート、またはポリエチレンテレフタレートポリエステルシートを含む請求項9に記載の界面材料。
- 前記組成物が、前記基板の2面にコーティングされる請求項9に記載の界面材料。
- (II)前記基板の反対側の組成物の表面を被覆する剥離シートをさらに含む請求項11に記載の界面材料。
- (i)熱源とヒートスプレッダとの間の熱通路に沿って、請求項1に記載の組成物を挿入することを含む方法。
- 前記熱源が電子部品を含む請求項13に記載の方法。
- 前記ヒートスプレッダが、ヒートシンク、熱伝導性プレート、熱伝導性カバー、ファン、または循環冷却系を含む請求項13に記載の方法。
- (ii)前記組成物を前記組成物の軟化温度以上の温度に加熱すること、
(iii)前記組成物に圧力を加えること、
(iv)前記組成物を相変化温度よりも低い温度に冷却すること
をさらに含む請求項13に記載の方法。 - 請求項16に記載の方法によって調製されるデバイス。
- 成分(A)(i)および成分(A)(ii)は、存在するならば、成分(A)が室温で100Pa・sを超える粘度を有するように、かつ、成分(A)が動作温度または組立て温度でモジュラスおよび粘度を低下させるように選択される請求項1、6および7のいずれか一項に記載の組成物。
- 成分(A)が90℃以上で10Pa・s以下の粘度を有する請求項18に記載の組成物。
- 成分(A)(i)が、
(a)(Ph2SiO2/2)19((CH3)2SiO2/2)19(PhSiO3/2)37((CH3)SiO3/2)25(Phはフェニル基を表す)と、
(b)(CH3)3SiO1/2シロキサンユニットおよびSiO4/2シロキサンユニットからなるオルガノポリシロキサン樹脂(樹脂は数平均分子量が2,600であり、SiO4/2ユニットに対する(CH3)3SiO1/2ユニットのモル比が0.9:1であり、樹脂は1重量%未満のケイ素結合ヒドロキシル基を含む)
から選択される請求項1、6および7のいずれか一項に記載の組成物。 - 成分(A)(ii)が存在し、成分(A)(ii)がジメチルビニルシロキシ末端のポリジメチルシロキサンである請求項1、6、7、および20のいずれか一項に記載の組成物。
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Also Published As
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KR20050074486A (ko) | 2005-07-18 |
DE60317232D1 (de) | 2007-12-13 |
EP1559114B1 (en) | 2007-10-31 |
ATE377249T1 (de) | 2007-11-15 |
MY133214A (en) | 2007-10-31 |
US6783692B2 (en) | 2004-08-31 |
WO2004038732A1 (en) | 2004-05-06 |
US20040075076A1 (en) | 2004-04-22 |
TW200409801A (en) | 2004-06-16 |
JP4954475B2 (ja) | 2012-06-13 |
DE60317232T2 (de) | 2008-08-07 |
KR101061457B1 (ko) | 2011-09-02 |
TWI308169B (en) | 2009-04-01 |
AU2003265983A1 (en) | 2004-05-13 |
EP1559114A1 (en) | 2005-08-03 |
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