JP2006344934A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
- Publication number
- JP2006344934A JP2006344934A JP2006114641A JP2006114641A JP2006344934A JP 2006344934 A JP2006344934 A JP 2006344934A JP 2006114641 A JP2006114641 A JP 2006114641A JP 2006114641 A JP2006114641 A JP 2006114641A JP 2006344934 A JP2006344934 A JP 2006344934A
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- Prior art keywords
- semiconductor substrate
- semiconductor
- acceleration sensor
- connection member
- substrate
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Abstract
【解決手段】半導体基板10に可動体20が設けられ、Alからなるボンディングワイヤ200によって半導体基板10と外部とが電気的に接続されてなる加速度センサS1において、ボンディングワイヤ200は半導体基板10の表面に直接接触しており、この接触部においてワイヤ200を構成するAlと半導体基板10を構成するSiとが反応した反応生成物としてのAl−Si合金からなるAl−Si反応層300を形成することにより、ワイヤ200と半導体基板10とが電気的に接続されている。
【選択図】図1
Description
図1に示されるように、本実施形態の加速度センサS1は、大きくは、半導体基板10に素子部としての可動体20を設けてなる加速度センサ素子100に、外部との電気的な接続を行うための導電性の材料よりなる接続部材としてのボンディングワイヤ200を電気的に接続することにより構成されている。
V0=(CS1−CS2)・Vcc/Cf
このようにして、加速度の検出がなされる。
このような加速度センサ素子100は、たとえば、次のようにして製造することができる。図6は、図1に示される本実施形態の加速度センサS1の製造方法を示す工程図である。
ところで、本実施形態によれば、半導体基板10と、この半導体基板10に設けられた素子部20と、半導体基板10と電気的に接続され外部との電気的な接続を行うための導電性の材料よりなる接続部材200とを備える半導体装置S1において、接続部材200は半導体基板10の表面に直接接触しており、この接触部において接続部材200を構成する導電性の材料と半導体基板10を構成する半導体とが反応した反応生成物300を形成することにより、接続部材200と半導体基板10とが電気的に接続されていることを特徴とする半導体装置S1が提供される。
ここで、本実施形態の種々の変形例について述べておく。図8(a)は、第1の変形例としての加速度センサにおける加速度センサ素子100の概略平面図であり、図8(b)は図8(a)の概略断面図である。なお、以下の各変形例を示す図のうち断面図は、上記図2(b)と同様に、加速度センサ素子100における可動体20を含む断面と接続部材200の近傍の断面とを合成したモデル的な断面を示している。
なお、ボンディングワイヤ200と半導体基板200との接触部において、ボンディングワイヤ200を構成する導電性の材料が半導体基板10の内部へくさび状に入り込んだ形、いわゆるアロイスパイクが発生していてもよい。
200…接続部材としてのボンディングワイヤ、
300…反応生成物としてのAl−Si反応層。
Claims (10)
- 半導体基板(10)と、
前記半導体基板(10)に設けられた素子部(20)と、
前記半導体基板(10)と電気的に接続され外部との電気的な接続を行うための導電性の材料よりなる接続部材(200)とを備える半導体装置において、
前記接続部材(200)は前記半導体基板(10)の表面に直接接触しており、前記接続部材(200)と前記半導体基板(10)とが電気的に接続されていることを特徴とする半導体装置。 - 前記半導体基板(10)における前記接続部材(200)の接触部において、前記接続部材(200)を構成する導電性の材料と前記半導体基板(10)を構成する半導体とが反応した反応生成物(300)を形成していることを特徴とする請求項1に記載の半導体装置。
- 前記接続部材は、ボンディングワイヤ(200)であることを特徴とする請求項1または2に記載の半導体装置。
- 前記接続部材(200)を構成する導電性の材料はAlであり、前記半導体基板(10)を構成する半導体はSiであり、前記反応生成物(300)はAl−Siであることを特徴とする請求項1ないし3のいずれか1つに記載の半導体装置。
- 前記素子部は、力学量の印加に伴い前記半導体基板(10)に対して変位可能な可動体(20)であることを特徴とする請求項1ないし4のいずれか1つに記載の半導体装置。
- 半導体基板(10)を用意し、前記半導体基板(10)に素子部(20)を設けるとともに、外部との電気的な接続を行うための導電性の材料よりなる接続部材(200)を前記半導体基板(10)に電気的に接続してなる半導体装置の製造方法において、
前記接続部材(200)を前記半導体基板(10)の表面に直接接触させた状態で、この接触部に熱処理を施すことにより、前記接触部において前記接続部材(200)を構成する導電性の材料と前記半導体基板(10)を構成する半導体とを反応させ反応生成物(300)を形成することを特徴とする半導体装置の製造方法。 - 前記熱処理は、前記接触部に対して局所的にレーザを照射することにより行うものであることを特徴とする請求項6に記載の半導体装置の製造方法。
- 前記接続部材は、ボンディングワイヤ(200)であり、
前記熱処理は、前記半導体基板(10)の表面にワイヤボンディングを行うのと同時に実行することを特徴とする請求項6または7に記載の半導体装置の製造方法。 - 前記接続部材は、ボンディングワイヤ(200)であり、
前記熱処理は、前記半導体基板(10)の表面にワイヤボンディングを行った後に実行することを特徴とする請求項6または7に記載の半導体装置の製造方法。 - 前記接続部材(200)を構成する導電性の材料はAlであり、前記半導体基板(10)を構成する半導体はSiであり、前記反応生成物(300)はAl−Siであることを特徴とする請求項6ないし9のいずれか1つに記載の半導体装置の製造方法。
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JP2006114641A JP4710700B2 (ja) | 2005-05-09 | 2006-04-18 | 半導体装置およびその製造方法 |
US11/884,275 US20090194827A1 (en) | 2005-05-09 | 2006-04-25 | Semiconductor Device Having Element Portion and Method of Producing the Same |
PCT/JP2006/308605 WO2006120886A1 (ja) | 2005-05-09 | 2006-04-25 | 素子部を有する半導体装置およびその製造方法 |
DE112006001152T DE112006001152B8 (de) | 2005-05-09 | 2006-04-25 | Verfahren zur Fertigung einer Halbleitervorrichtung mit Elementabschnitt |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010141112A (ja) * | 2008-12-11 | 2010-06-24 | Sharp Corp | 半導体装置および半導体装置の製造方法 |
WO2014208043A1 (ja) * | 2013-06-27 | 2014-12-31 | 株式会社デンソー | 物理量センサ |
JP2016082230A (ja) * | 2014-10-13 | 2016-05-16 | ゼネラル・エレクトリック・カンパニイ | ワイヤボンドを有するパワーオーバーレイ構造体およびその製造方法 |
Families Citing this family (4)
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---|---|---|---|---|
JP4737140B2 (ja) * | 2006-10-20 | 2011-07-27 | セイコーエプソン株式会社 | Memsデバイスおよびその製造方法 |
US7737514B1 (en) * | 2008-02-21 | 2010-06-15 | Yee-Chung Fu | MEMS pressure sensor using area-change capacitive technique |
US8334159B1 (en) | 2009-03-30 | 2012-12-18 | Advanced Numicro Systems, Inc. | MEMS pressure sensor using capacitive technique |
US10879449B2 (en) * | 2017-05-11 | 2020-12-29 | Nihat Okulan | Semiconductor strain gauge and method of manufacturing same |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5454571A (en) * | 1977-10-11 | 1979-04-28 | Toshiba Corp | Wire bonding method of semiconductor device |
JPS6153737A (ja) * | 1984-08-24 | 1986-03-17 | Hitachi Ltd | 電子装置の組立法及び組立装置 |
JPH07120496A (ja) * | 1993-10-25 | 1995-05-12 | Hitachi Ltd | 加速度センサ |
JPH07135234A (ja) * | 1993-11-09 | 1995-05-23 | Hitachi Ltd | パワー半導体モジュール |
JP2001044450A (ja) * | 1999-07-26 | 2001-02-16 | Denso Corp | 半導体力学量センサ |
JP2002134560A (ja) * | 2000-10-26 | 2002-05-10 | Fuji Electric Co Ltd | 半導体装置 |
JP2003156507A (ja) * | 2001-11-22 | 2003-05-30 | Matsushita Electric Works Ltd | 半導体加速度センサの封止方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE559732A (ja) * | 1956-10-31 | 1900-01-01 | ||
US3702787A (en) * | 1970-11-02 | 1972-11-14 | Motorola Inc | Method of forming ohmic contact for semiconducting devices |
US3891822A (en) * | 1971-04-20 | 1975-06-24 | Unitek Corp | Pulse heated thermocompression bonding apparatus |
US4534811A (en) * | 1983-12-30 | 1985-08-13 | International Business Machines Corporation | Apparatus for thermo bonding surfaces |
US4845354A (en) * | 1988-03-08 | 1989-07-04 | International Business Machines Corporation | Process control for laser wire bonding |
US5610335A (en) * | 1993-05-26 | 1997-03-11 | Cornell Research Foundation | Microelectromechanical lateral accelerometer |
US6149190A (en) * | 1993-05-26 | 2000-11-21 | Kionix, Inc. | Micromechanical accelerometer for automotive applications |
US6199874B1 (en) * | 1993-05-26 | 2001-03-13 | Cornell Research Foundation Inc. | Microelectromechanical accelerometer for automotive applications |
US5563343A (en) * | 1993-05-26 | 1996-10-08 | Cornell Research Foundation, Inc. | Microelectromechanical lateral accelerometer |
JP2003248016A (ja) * | 2002-02-21 | 2003-09-05 | Denso Corp | 容量式加速度センサ |
-
2006
- 2006-04-18 JP JP2006114641A patent/JP4710700B2/ja not_active Expired - Fee Related
- 2006-04-25 US US11/884,275 patent/US20090194827A1/en not_active Abandoned
- 2006-04-25 DE DE112006001152T patent/DE112006001152B8/de not_active Expired - Fee Related
- 2006-04-25 WO PCT/JP2006/308605 patent/WO2006120886A1/ja active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5454571A (en) * | 1977-10-11 | 1979-04-28 | Toshiba Corp | Wire bonding method of semiconductor device |
JPS6153737A (ja) * | 1984-08-24 | 1986-03-17 | Hitachi Ltd | 電子装置の組立法及び組立装置 |
JPH07120496A (ja) * | 1993-10-25 | 1995-05-12 | Hitachi Ltd | 加速度センサ |
JPH07135234A (ja) * | 1993-11-09 | 1995-05-23 | Hitachi Ltd | パワー半導体モジュール |
JP2001044450A (ja) * | 1999-07-26 | 2001-02-16 | Denso Corp | 半導体力学量センサ |
JP2002134560A (ja) * | 2000-10-26 | 2002-05-10 | Fuji Electric Co Ltd | 半導体装置 |
JP2003156507A (ja) * | 2001-11-22 | 2003-05-30 | Matsushita Electric Works Ltd | 半導体加速度センサの封止方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010141112A (ja) * | 2008-12-11 | 2010-06-24 | Sharp Corp | 半導体装置および半導体装置の製造方法 |
WO2014208043A1 (ja) * | 2013-06-27 | 2014-12-31 | 株式会社デンソー | 物理量センサ |
JP2015010871A (ja) * | 2013-06-27 | 2015-01-19 | 株式会社デンソー | 物理量センサ |
JP2016082230A (ja) * | 2014-10-13 | 2016-05-16 | ゼネラル・エレクトリック・カンパニイ | ワイヤボンドを有するパワーオーバーレイ構造体およびその製造方法 |
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JP4710700B2 (ja) | 2011-06-29 |
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US20090194827A1 (en) | 2009-08-06 |
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