JP2006344929A5 - - Google Patents
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- Publication number
- JP2006344929A5 JP2006344929A5 JP2006092049A JP2006092049A JP2006344929A5 JP 2006344929 A5 JP2006344929 A5 JP 2006344929A5 JP 2006092049 A JP2006092049 A JP 2006092049A JP 2006092049 A JP2006092049 A JP 2006092049A JP 2006344929 A5 JP2006344929 A5 JP 2006344929A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- hard mask
- upper electrode
- ferroelectric
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000003990 capacitor Substances 0.000 claims 14
- 238000004519 manufacturing process Methods 0.000 claims 12
- 238000005530 etching Methods 0.000 claims 7
- 238000000034 method Methods 0.000 claims 6
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- MYHVOZRQLIUCAH-UHFFFAOYSA-N [Ru]=O.[Ca] Chemical compound [Ru]=O.[Ca] MYHVOZRQLIUCAH-UHFFFAOYSA-N 0.000 claims 3
- JFWLFXVBLPDVDZ-UHFFFAOYSA-N [Ru]=O.[Sr] Chemical compound [Ru]=O.[Sr] JFWLFXVBLPDVDZ-UHFFFAOYSA-N 0.000 claims 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052741 iridium Inorganic materials 0.000 claims 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 2
- RVLXVXJAKUJOMY-UHFFFAOYSA-N lanthanum;oxonickel Chemical compound [La].[Ni]=O RVLXVXJAKUJOMY-UHFFFAOYSA-N 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910000914 Mn alloy Inorganic materials 0.000 claims 1
- 229910000929 Ru alloy Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910000457 iridium oxide Inorganic materials 0.000 claims 1
- CJTCBBYSPFAVFL-UHFFFAOYSA-N iridium ruthenium Chemical compound [Ru].[Ir] CJTCBBYSPFAVFL-UHFFFAOYSA-N 0.000 claims 1
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050048531A KR100725451B1 (ko) | 2005-06-07 | 2005-06-07 | 강유전체 캐패시터의 제조 방법 및 이를 이용한 반도체장치의 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006344929A JP2006344929A (ja) | 2006-12-21 |
| JP2006344929A5 true JP2006344929A5 (enExample) | 2009-04-16 |
Family
ID=37493308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006092049A Withdrawn JP2006344929A (ja) | 2005-06-07 | 2006-03-29 | 強誘電体キャパシタの製造方法及びこれを利用した半導体装置の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20060273366A1 (enExample) |
| JP (1) | JP2006344929A (enExample) |
| KR (1) | KR100725451B1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100456829B1 (ko) * | 2002-06-17 | 2004-11-10 | 삼성전자주식회사 | 듀얼다마신공정에 적합한 엠아이엠 캐패시터 및 그의제조방법 |
| JP4596167B2 (ja) * | 2006-02-24 | 2010-12-08 | セイコーエプソン株式会社 | キャパシタの製造方法 |
| JP5028829B2 (ja) * | 2006-03-09 | 2012-09-19 | セイコーエプソン株式会社 | 強誘電体メモリ装置の製造方法 |
| KR100763559B1 (ko) * | 2006-07-18 | 2007-10-04 | 삼성전자주식회사 | 강유전체막의 형성 방법 및 이를 이용한 강유전체캐패시터의 제조 방법 |
| US7582549B2 (en) | 2006-08-25 | 2009-09-01 | Micron Technology, Inc. | Atomic layer deposited barium strontium titanium oxide films |
| US7833914B2 (en) * | 2007-04-27 | 2010-11-16 | Micron Technology, Inc. | Capacitors and methods with praseodymium oxide insulators |
| US8154850B2 (en) * | 2007-05-11 | 2012-04-10 | Paratek Microwave, Inc. | Systems and methods for a thin film capacitor having a composite high-k thin film stack |
| US10115527B2 (en) | 2015-03-09 | 2018-10-30 | Blackberry Limited | Thin film dielectric stack |
| US10297658B2 (en) | 2016-06-16 | 2019-05-21 | Blackberry Limited | Method and apparatus for a thin film dielectric stack |
| US10950444B2 (en) * | 2018-01-30 | 2021-03-16 | Tokyo Electron Limited | Metal hard mask layers for processing of microelectronic workpieces |
| US11183398B2 (en) * | 2018-08-10 | 2021-11-23 | Tokyo Electron Limited | Ruthenium hard mask process |
| JP7066585B2 (ja) * | 2018-09-19 | 2022-05-13 | キオクシア株式会社 | 記憶装置 |
| JP7310146B2 (ja) * | 2019-01-16 | 2023-07-19 | 東京エレクトロン株式会社 | ハードマスク付き半導体デバイスの製造用の基板及び半導体デバイスの製造方法 |
| US20200286685A1 (en) * | 2019-03-06 | 2020-09-10 | Intel Corporation | Capacitor with epitaxial strain engineering |
| US11532439B2 (en) * | 2019-03-07 | 2022-12-20 | Intel Corporation | Ultra-dense ferroelectric memory with self-aligned patterning |
| US20220415651A1 (en) * | 2021-06-29 | 2022-12-29 | Applied Materials, Inc. | Methods Of Forming Memory Device With Reduced Resistivity |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000040800A (ja) * | 1998-07-24 | 2000-02-08 | Sharp Corp | 強誘電体記憶素子及びその製造方法 |
| US6674633B2 (en) * | 2001-02-28 | 2004-01-06 | Fujitsu Limited | Process for producing a strontium ruthenium oxide protective layer on a top electrode |
| US6495413B2 (en) * | 2001-02-28 | 2002-12-17 | Ramtron International Corporation | Structure for masking integrated capacitors of particular utility for ferroelectric memory integrated circuits |
| KR20030002095A (ko) * | 2001-06-30 | 2003-01-08 | 주식회사 하이닉스반도체 | 강유전체 메모리 소자의 캐패시터 제조 방법 |
| JP4014902B2 (ja) * | 2002-03-15 | 2007-11-28 | 富士通株式会社 | 半導体装置の製造方法 |
| KR100875647B1 (ko) * | 2002-05-17 | 2008-12-24 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 형성방법 |
| KR100454255B1 (ko) * | 2002-12-30 | 2004-10-26 | 주식회사 하이닉스반도체 | 하드마스크를 이용한 캐패시터의 제조 방법 |
| US7250349B2 (en) * | 2003-03-06 | 2007-07-31 | Texas Instruments Incorporated | Method for forming ferroelectric memory capacitor |
-
2005
- 2005-06-07 KR KR1020050048531A patent/KR100725451B1/ko not_active Expired - Fee Related
-
2006
- 2006-03-29 JP JP2006092049A patent/JP2006344929A/ja not_active Withdrawn
- 2006-06-06 US US11/447,545 patent/US20060273366A1/en not_active Abandoned
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