JP2006339174A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2006339174A JP2006339174A JP2005158289A JP2005158289A JP2006339174A JP 2006339174 A JP2006339174 A JP 2006339174A JP 2005158289 A JP2005158289 A JP 2005158289A JP 2005158289 A JP2005158289 A JP 2005158289A JP 2006339174 A JP2006339174 A JP 2006339174A
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Abstract
温度サイクルに対して半田接合部の信頼性が高いパワー半導体モジュールを提供すること。
【解決手段】
本発明のパワー半導体モジュールでは、絶縁基板上の金属回路パターンと金属端子間の半田接合部を、金属回路パターン上に接合して所定の厚さにした高融点半田の上を低融点半田で覆い、この低融点半田で金属端子を接合する。さらに、金属ベースと金属回路パターンとの間も、同様に、高融点半田で所定の厚さを確保し、低融点半田で高融点半田を被覆して接合し、半田接合部の信頼性を高めた。
【選択図】図1
Description
(a)Pb−Sn系では、19wt%>Sn>0.1wt%、さらに微量のIn、Ag、Sb、Geなどの成分が1つ以上含有されていても良い。
(b)Pb−In系では、10wt%>In>0.1wt% 、ただしIn≧5wt%が望ましい。さらに微量のSn、Ag、Sb、Geなどの成分が1つ以上含有されていても良い。
(c)Pb−Ag系では、4wt%>Ag>0.1wt%、さらに微量のSn、In、Sb、Geなどの成分が1つ以上含有されていても良い。
(d)Pb−Sb系では、10wt%>Sb>0.1wt% 、さらに微量のSn、In、Ag、Geなどの成分が1つ以上含有されていても良い。
(a)Sn−Pb共晶系。Sn−37Pb、Sn−50Pb等。
(b)Sn系半田。Sn−Ag−Cu系、Sn−Cu系、Sn−Sb系、Sn−In系等。
Claims (14)
- 表面及び裏面に電極を有する半導体素子と、該半導体素子を搭載する絶縁基板と、該絶縁基板に配置した金属回路パターンと、該金属回路パターンに半田部材を介して接合された金属端子とを有する電力半導体装置において、
前記金属端子を金属回路パターンに接合する半田部材が融点の異なる複数の半田の積層体であって、融点の高い半田部材が、融点の低い半田部材で被覆されていることを特徴とする電力半導体装置。 - 請求項1に記載の電力半導体装置において、
前記金属回路パターン側の半田部材の融点が、金属端子側の半田部材の融点より高いことを特徴とする電力半導体装置。 - 請求項2に記載の電力半導体装置において、
前記金属回路パターン側の融点の高い半田部材が、前記金属端子側に向けて凸形状を成していることを特徴とする電力半導体装置。 - 請求項1に記載の電力半導体装置において、
前記半導体素子が前記金属回路パターンに別の半田部材を介して接合しており、該別の半田部材も融点が異なる複数の半田層を積層し、融点の高い半田部材が、融点の低い半田部材で被覆されていることを特徴とする電力半導体装置。 - 請求項1に記載の電力半導体装置において、
前記半導体素子がIGBTあるいはパワーMOSFETの何れかであることを特徴とする電力半導体装置。 - 表面及び裏面に電極を有する半導体素子と、該半導体素子を一方の面に搭載する絶縁基板と、該絶縁基板の一方の面に配置した金属回路パターンと、該金属回路パターンに半田部材を介して接合された金属端子と、前記絶縁基板の他方の面に配置した別の金属回路パターンと、該別の金属回路パターンに半田部材を介して接合された金属ベースとを有する電力半導体装置において、
前記金属ベースを前記別の金属回路パターンに接合する半田部材が融点の異なる複数の半田層を積層してあり、融点の高い半田部材が、融点の低い半田部材で被覆されていることを特徴とする電力半導体装置。 - 請求項6に記載の電力半導体装置において、
前記金属ベース側の半田部材の融点が、前記別の金属回路パターン側の半田部材の融点より高いことを特徴とする電力半導体装置。 - 請求項7に記載の電力半導体装置において、
前記金属ベース側の融点が高い半田部材が、前記別の金属回路パターン側に向けて凸形状を成していることを特徴とする電力半導体装置。 - 請求項6に記載の電力半導体装置において、
前記半導体素子が前記金属回路パターンに別の半田部材を介して接合しており、該別の半田部材も融点が異なる複数の半田層を積層し、融点の高い半田部材が、融点の低い半田部材で被覆されていることを特徴とする電力半導体装置。 - 請求項6に記載の電力半導体装置において、
前記半導体素子がIGBTあるいはパワーMOSFETの何れかであることを特徴とする電力半導体装置。 - 表面及び裏面に電極を有する半導体素子と、該半導体素子を搭載する絶縁基板と、該絶縁基板に配置した金属回路パターンと、該金属回路パターンに半田部材を介して接合された金属端子とを有する電力半導体装置の製造方法において、
前記金属回路パターンに第1の半田部材を接合する第1の接合工程と、
該第1の接合工程より後で該第1の半田部材に第2の半田部材を接合する第2の接合工程とを含み、
前記第1の半田部材の融点が前記第2の半田部材の融点より高く、前記第1の半田部材が前記第2の半田部材で被覆されることを特徴とする電力半導体装置の製造方法。 - 請求項11に記載の電力半導体装置の製造方法において、
前記第1の接合工程の温度が、前記第2の接合工程の温度より高いことを特徴とする電力半導体の製造方法。 - 請求項11に記載の電力半導体装置の製造方法において、前記第2の接合工程の温度が、前記第1の半田部材の固相線温度以下であることを特徴とする半導体装置。
- 請求項11に記載の電力半導体装置の製造方法において、
前記半導体素子がIGBTあるいはパワーMOSFETの何れかであることを特徴とする電力半導体装置の製造方法。
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JP2017152581A (ja) * | 2016-02-25 | 2017-08-31 | 株式会社東芝 | 半導体装置 |
CN108430169A (zh) * | 2018-05-29 | 2018-08-21 | 东莞立德精密工业有限公司 | 磁性线圈的焊接方法 |
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JP2017152581A (ja) * | 2016-02-25 | 2017-08-31 | 株式会社東芝 | 半導体装置 |
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CN113396479B (zh) * | 2019-02-14 | 2023-09-22 | 株式会社日立产机系统 | 电力转换装置 |
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