JP2006328531A5 - - Google Patents
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- Publication number
- JP2006328531A5 JP2006328531A5 JP2006124684A JP2006124684A JP2006328531A5 JP 2006328531 A5 JP2006328531 A5 JP 2006328531A5 JP 2006124684 A JP2006124684 A JP 2006124684A JP 2006124684 A JP2006124684 A JP 2006124684A JP 2006328531 A5 JP2006328531 A5 JP 2006328531A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- layer
- forming
- capacitor
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000010410 layer Substances 0.000 claims description 424
- 238000000034 method Methods 0.000 claims description 137
- 239000003990 capacitor Substances 0.000 claims description 135
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 84
- 239000000463 material Substances 0.000 claims description 62
- 229910052751 metal Inorganic materials 0.000 claims description 56
- 239000002184 metal Substances 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 50
- 238000004148 unit process Methods 0.000 claims description 48
- 238000010304 firing Methods 0.000 claims description 47
- 239000011888 foil Substances 0.000 claims description 47
- 239000012298 atmosphere Substances 0.000 claims description 42
- 230000008569 process Effects 0.000 claims description 39
- 238000003980 solgel method Methods 0.000 claims description 37
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 31
- 229910052759 nickel Inorganic materials 0.000 claims description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 20
- 239000011261 inert gas Substances 0.000 claims description 20
- 239000001301 oxygen Substances 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- 239000002131 composite material Substances 0.000 claims description 19
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 238000001035 drying Methods 0.000 claims description 18
- 239000002344 surface layer Substances 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 10
- 229910001096 P alloy Inorganic materials 0.000 claims description 9
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 claims description 9
- 238000006467 substitution reaction Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 58
- 238000005530 etching Methods 0.000 description 53
- 239000013078 crystal Substances 0.000 description 41
- 239000000243 solution Substances 0.000 description 38
- 230000000052 comparative effect Effects 0.000 description 32
- 239000010408 film Substances 0.000 description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 230000005540 biological transmission Effects 0.000 description 15
- 238000002425 crystallisation Methods 0.000 description 15
- 230000008025 crystallization Effects 0.000 description 15
- 239000010409 thin film Substances 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 13
- 239000011889 copper foil Substances 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 229910052698 phosphorus Inorganic materials 0.000 description 10
- 239000011574 phosphorus Substances 0.000 description 10
- 230000002829 reductive effect Effects 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 238000010884 ion-beam technique Methods 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- 229910002367 SrTiO Inorganic materials 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- 238000000197 pyrolysis Methods 0.000 description 6
- 238000005096 rolling process Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 5
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 230000007847 structural defect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000003111 delayed effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical group [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 238000010828 elution Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000010310 metallurgical process Methods 0.000 description 2
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000033444 hydroxylation Effects 0.000 description 1
- 238000005805 hydroxylation reaction Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 150000002696 manganese Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000010525 oxidative degradation reaction Methods 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical group [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006124684A JP3958343B2 (ja) | 2005-04-28 | 2006-04-28 | 酸化物誘電層の形成方法及びその形成方法で得られた酸化物誘電層を備えたキャパシタ層形成材 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005133694 | 2005-04-28 | ||
| JP2006124684A JP3958343B2 (ja) | 2005-04-28 | 2006-04-28 | 酸化物誘電層の形成方法及びその形成方法で得られた酸化物誘電層を備えたキャパシタ層形成材 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006328531A JP2006328531A (ja) | 2006-12-07 |
| JP2006328531A5 true JP2006328531A5 (enExample) | 2007-02-15 |
| JP3958343B2 JP3958343B2 (ja) | 2007-08-15 |
Family
ID=37550522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006124684A Expired - Fee Related JP3958343B2 (ja) | 2005-04-28 | 2006-04-28 | 酸化物誘電層の形成方法及びその形成方法で得られた酸化物誘電層を備えたキャパシタ層形成材 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3958343B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5434714B2 (ja) * | 2009-04-15 | 2014-03-05 | Ｔｄｋ株式会社 | 薄膜コンデンサ及び電子回路基板 |
| JP5617441B2 (ja) | 2009-09-02 | 2014-11-05 | 三菱マテリアル株式会社 | 誘電体薄膜の形成方法及び該誘電体薄膜を有する薄膜キャパシタ |
| CN104120416B (zh) * | 2014-07-24 | 2016-06-01 | 西安理工大学 | 紫外感光镧锶锰氧溶胶及其微细图形化薄膜的制备方法 |
| CN105908160B (zh) * | 2016-06-03 | 2018-10-16 | 西北工业大学 | Cf/Mg复合材料表面有机-无机杂化二氧化硅膜的制备方法 |
| JP7342752B2 (ja) * | 2020-03-18 | 2023-09-12 | Tdk株式会社 | 誘電体薄膜、誘電体素子および電子回路基板 |
-
2006
- 2006-04-28 JP JP2006124684A patent/JP3958343B2/ja not_active Expired - Fee Related
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