JP2006269607A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2006269607A5 JP2006269607A5 JP2005083597A JP2005083597A JP2006269607A5 JP 2006269607 A5 JP2006269607 A5 JP 2006269607A5 JP 2005083597 A JP2005083597 A JP 2005083597A JP 2005083597 A JP2005083597 A JP 2005083597A JP 2006269607 A5 JP2006269607 A5 JP 2006269607A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductivity type
- transparent conductive
- semiconductor layer
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000009832 plasma treatment Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- 229910052743 krypton Inorganic materials 0.000 claims description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 2
- 229910052754 neon Inorganic materials 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- 238000002441 X-ray diffraction Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 description 4
- 230000001788 irregular Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005083597A JP2006269607A (ja) | 2005-03-23 | 2005-03-23 | 光起電力素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005083597A JP2006269607A (ja) | 2005-03-23 | 2005-03-23 | 光起電力素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006269607A JP2006269607A (ja) | 2006-10-05 |
| JP2006269607A5 true JP2006269607A5 (enExample) | 2008-05-08 |
Family
ID=37205272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005083597A Pending JP2006269607A (ja) | 2005-03-23 | 2005-03-23 | 光起電力素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006269607A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8203071B2 (en) | 2007-01-18 | 2012-06-19 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
| US7875486B2 (en) | 2007-07-10 | 2011-01-25 | Applied Materials, Inc. | Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning |
| WO2009015213A1 (en) * | 2007-07-24 | 2009-01-29 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
| KR100965397B1 (ko) * | 2008-12-23 | 2010-06-25 | 주식회사 테스 | 적층형 박막 태양전지 제조 장치 및 그 방법 |
| KR101319674B1 (ko) * | 2009-05-06 | 2013-10-17 | 씬실리콘 코포레이션 | 광기전 전지 및 반도체층 적층체에서의 광 포획성 향상 방법 |
| JP6265362B2 (ja) * | 2012-02-27 | 2018-01-24 | 日東電工株式会社 | Ｃｉｇｓ系化合物太陽電池 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02177372A (ja) * | 1988-12-27 | 1990-07-10 | Kyocera Corp | 光電変換装置 |
| JP2958491B2 (ja) * | 1990-03-28 | 1999-10-06 | 鐘淵化学工業株式会社 | 光電変換装置の製造方法 |
| JP3560109B2 (ja) * | 1996-11-18 | 2004-09-02 | 富士電機ホールディングス株式会社 | 薄膜光電変換素子の製造方法および製造装置 |
| JPH11354820A (ja) * | 1998-06-12 | 1999-12-24 | Sharp Corp | 光電変換素子及びその製造方法 |
| JP4219096B2 (ja) * | 2000-03-24 | 2009-02-04 | 三洋電機株式会社 | 光起電力装置の製造方法 |
| JP4086693B2 (ja) * | 2003-03-26 | 2008-05-14 | キヤノン株式会社 | 光起電力素子および光起電力素子形成方法 |
| JP4012106B2 (ja) * | 2003-03-26 | 2007-11-21 | キヤノン株式会社 | 光起電力素子形成方法 |
| JP2004311965A (ja) * | 2003-03-26 | 2004-11-04 | Canon Inc | 光起電力素子の製造方法 |
| JP2005159320A (ja) * | 2003-10-27 | 2005-06-16 | Mitsubishi Heavy Ind Ltd | 太陽電池及び太陽電池の製造方法 |
-
2005
- 2005-03-23 JP JP2005083597A patent/JP2006269607A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5313948B2 (ja) | 電極を備えた透明基材 | |
| JP5161521B2 (ja) | 太陽電池および太陽電池を製造する方法 | |
| JP2010015981A5 (enExample) | ||
| CN103500745A (zh) | 柔性显示基板及其制备方法、柔性显示装置 | |
| KR20170046194A (ko) | 기판 상에 구조화된 코팅을 생성하는 방법, 코팅된 기판, 및 코팅된 기판을 갖는 반제품 | |
| JP2007123861A5 (enExample) | ||
| JP5685350B2 (ja) | 基板の特定の場所に蒸着するための転写マスク及び当該転写マスクを製造するための方法 | |
| WO2019138875A1 (ja) | 機能素子および機能素子の製造方法ならびに電子機器 | |
| JP2009527895A (ja) | 半導体コンポーネント及びその製造方法及びその利用 | |
| MY160173A (en) | Light transmittance optimizing coated glass article for solar cell and method for making | |
| JP2006269607A5 (enExample) | ||
| JP5896889B2 (ja) | 光学選択膜 | |
| RU2015151341A (ru) | Способ изготовления частично свободной графеновой кристаллической пленки и устройство, содержащее такую пленку | |
| Moosi Govindharajulu et al. | Enhanced diffuse reflectance of photons in molybdenum back electrode films achieved via surface texturing for thin film solar cells | |
| JP2008536295A5 (enExample) | ||
| TW201227111A (en) | Methods for manufacturing array substrates | |
| KR20090032366A (ko) | 은계를 투명전극으로 하는 자외선 발광소자 | |
| KR20170104189A (ko) | 다층 비정질 산화인듐갈륨아연막 구조를 이용한 저방사 필름 및 그 제조방법 | |
| Ichikawa et al. | Fabrication of High Power Deep Ultraviolet Light-Emitting Diodes with Glass Lenses Using Atomic Diffusion Bonding | |
| JP2007264353A (ja) | 波長選択性薄膜 | |
| JP2004186685A5 (enExample) | ||
| TWI605609B (zh) | Ultraviolet light sensing element and its manufacturing method | |
| TW201115760A (en) | Thin film photovoltaic device and manufacturing process thereof | |
| JP2009194386A (ja) | 光起電モジュールおよびその製造方法 | |
| JP2012069702A (ja) | 反射型フォトマスクブランクおよびその製造方法 |