TWI605609B - Ultraviolet light sensing element and its manufacturing method - Google Patents

Ultraviolet light sensing element and its manufacturing method Download PDF

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TWI605609B
TWI605609B TW106108088A TW106108088A TWI605609B TW I605609 B TWI605609 B TW I605609B TW 106108088 A TW106108088 A TW 106108088A TW 106108088 A TW106108088 A TW 106108088A TW I605609 B TWI605609 B TW I605609B
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semiconductor
glass film
ultraviolet light
light sensing
metallic glass
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TW201834260A (zh
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Bo-Ren Huang
Jin Zhu
You-Xuan Chen
Jia-hao ZHANG
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Description

紫外光感測元件及其製造方法
本發明係關於一種紫外光感測元件及其製造方法，尤指一種應用金屬玻璃薄膜之紫外光感測元件及其製造方法，能有效減少暗電流以提升訊雜比。
紫外光感測元件目前廣泛地應用在一般日常生活中，諸如軍事、天文研究、醫療、衛生殺菌、農業或通訊方面，均可發現其相關應用。紫外光感測元件原理是藉由感光材料將所接收之紫外光波段光線轉換成電訊號，而為了提升紫外光感測元件之適用性及因應使用需求，感光材料之選擇及效能的提升是目前相關研究中重要課題之一。
由於習知矽基光二極體之最靈敏波長未落入紫外光波長區段內，且矽之能隙在常溫下僅為1.2eV，因此以寬能隙半導體做為紫外光感測元件，例如氧化鋅能隙可達到3.3eV，則可解決對可見光響應與對紫外光波段量子轉換效率不足之問題。此類型紫外光感測元件可以操作在室溫下，且不需外加光學濾波片即可達到對可見光不響應之效果。此類感測器不僅穩定性高，且具有良好光電流增益與時間響應，然而以寬能隙半導體做為紫外光感測元件，仍存在訊雜比過小，以及響應時間過長等缺點。
因此，如何能研究出一種有效抑制暗電流並提高其訊雜比之紫外光感測元件，實為一值得研究之課題。
本發明之目的在於提供一種應用金屬玻璃薄膜之紫外光感測元件及其製造方法，能有效減少暗電流以提升訊雜比。
為達上述目的，本發明之紫外光感測元件包括玻璃基板、半導體結構、電極層及金屬玻璃薄膜。半導體結構包括形成於玻璃基板上之半導體種子層及形成於半導體種子層上之複數半導體奈米結構；電極層形成於半導體種子層及複數半導體奈米結構之間；金屬玻璃薄膜接觸半導體結構，其中藉由金屬玻璃薄膜與半導體結構之接觸面形成蕭特基能障接面，以抑制暗電流之產生並提高訊雜比。
在本發明之一實施例中，金屬玻璃薄膜藉由執行退火製程以提升非晶化效果。
在本發明之一實施例中，金屬玻璃薄膜位於玻璃基板與半導體種子層之間。
在本發明之一實施例中，金屬玻璃薄膜形成於複數半導體奈米結構上。
在本發明之一實施例中，各半導體奈米結構為奈米管或奈米柱。
在本發明之一實施例中，各半導體奈米結構與半導體種子層實質上垂直。
在本發明之一實施例中，金屬玻璃薄膜為銅基金屬玻璃薄膜。
在本發明之一實施例中，金屬玻璃薄膜為非連續結構。
本發明之紫外光感測元件製造方法包括以下步驟：提供玻璃基板；於玻璃基板上形成金屬玻璃薄膜；於金屬玻璃薄膜上形成半導體種子層；於半導體種子層上形成電極層；以及於電極層上形成複數半導體奈米結構。
在本發明之一實施例中，於形成半導體種子層之前更包括以下步驟：執行退火製程以提升金屬玻璃薄膜之非晶化效果。
由於各種態樣與實施例僅為例示性且非限制性，故在閱讀本說明書後，具有通常知識者在不偏離本發明之範疇下，亦可能有其他態樣與實施例。根據下述之詳細說明與申請專利範圍，將可使該等實施例之特徵及優點更加彰顯。
於本文中，用語「包括」、「具有」或其他任何類似用語意欲涵蓋非排他性之包括物。舉例而言，含有複數要件的元件或結構不僅限於本文所列出之此等要件而已，而是可以包括未明確列出但卻是該元件或結構通常固有之其他要件。
請先參考圖1及圖2。如圖1所示，本發明之紫外光感測元件1包括玻璃基板10、半導體結構20、電極層30及金屬玻璃薄膜40，而半導體結構20包括半導體種子層21及複數半導體奈米結構22。請一併參考圖2，如圖1及圖2所示，在本實施例中，欲製造本發明之紫外光感測元件1，首先提供玻璃基板10（步驟S1），於玻璃基板10一側之表面上以真空磁控濺鍍方式鍍上一層金屬玻璃薄膜40（步驟S2）。此處金屬玻璃薄膜40係採用具有非晶結構之金屬玻璃薄膜，而所述非晶結構定義為材料中原子無規則排列之結構，且金屬玻璃薄膜40具有無晶界缺陷、良好機械性能、低電子散射及低漏電流等特性。此處金屬玻璃薄膜40係為銅基金屬玻璃薄膜，其包括銅、鋯、鋁及鈦等元素成分，例如Cu-Zr-Al-Ti合金，但本發明並不以此為限。在本發明之一實施例中，金屬玻璃薄膜40之厚度不大於10nm，較佳者為3nm。此外，由於金屬玻璃薄膜40之厚度極薄，使得經濺鍍形成之金屬玻璃薄膜40為非連續結構（即形成金屬玻璃薄膜40之粒子間具有空隙）。
接著，於金屬玻璃薄膜40上以旋轉塗佈等方式形成半導體結構20之半導體種子層21（步驟S3），使得金屬玻璃薄膜40位於玻璃基板10及半導體種子層21之間，且金屬玻璃薄膜40之一側直接接觸半導體結構20。此處半導體種子層21可為半導體金屬氧化物種子層，例如以氧化鋅作為主要材料，其具有成本低廉、無毒性、穩定性高等優點，但本發明並不以此為限。
於形成半導體種子層21之後，再接著於半導體種子層21上形成電極層30（步驟S4）。此電極層30之形成方式首先針對半導體種子層21以曝光顯影方式製作出指叉式電極，在本發明之一實施例中，指叉式電極之指叉長度約為100μm、寬度約5.5 μm、間距約15 μm，但不以本實施例為限；接著利用真空磁控濺鍍機於半導體種子層21之表面製備厚度約5nm的鎳作為緩衝層，並濺鍍厚度約100nm的白金作為電極。
最後，於電極層30之表面形成半導體結構20之複數半導體奈米結構22（步驟S5），複數半導體奈米結構22是以水熱法沉積半導體金屬氧化物所形成之奈米結構，例如同樣以氧化鋅作為主要材料，而所形成之半導體奈米結構22可為奈米柱或奈米管，但本發明並不以此為限，且各半導體奈米結構22與半導體種子層21實質上垂直。電極層30會位於半導體種子層21及複數半導體奈米結構22之間。藉此，本發明之紫外光感測元件1即形成金屬-半導體-金屬型之紫外光感測元件。
此外，為了使金屬玻璃薄膜40具有更佳之特性，在本發明之一實施例中，於玻璃基板10上形成金屬玻璃薄膜40後，可針對金屬玻璃薄膜40進行退火製程（步驟S6），以提升金屬玻璃薄膜40之非晶化效果。此處退火製程是指將金屬玻璃薄膜40於氧氣環境下以固定溫度靜置30分鐘，而退火製程所需之固定溫度可隨需求而調整，例如在本發明之一實施例中，固定溫度可為150℃。
以下請參考圖3為本發明之紫外光感測元件1a之第二實施例。此第二實施例係為前述第一實施例之變化型式，如圖3所示，在本實施例中，改變了原本第一實施例中形成於玻璃基板10及半導體種子層21之間的金屬玻璃薄膜位置，也就是將紫外光感測元件1a中之金屬玻璃薄膜40a，改為複數半導體奈米結構22形成後，再將金屬玻璃薄膜40a以沉積方式形成於複數半導體奈米結構22之表面，使得金屬玻璃薄膜40a同樣會與半導體結構20接觸。此處紫外光感測元件1a同樣形成金屬-半導體-金屬型之紫外光感測元件。
以下將分別以本發明之紫外光感測元件1、1a作為實驗組，搭配具有不同差異條件之紫外光感測元件作為對照組，在相同環境設定條件下分別進行電性數值量測，進而比較實驗組及對照組之數據，以證明本發明之紫外光感測元件1、1a之實際功效。在以下實驗中，均於正常大氣環境下，以相同規格之紫外光光源（紫外光波長為365nm，光強度為1 mW/cm 2，電壓為5V），照射各實驗組及對照組之紫外光感測元件，以量測並記錄其相關電性數據以進行比對。實驗中各紫外光感測元件之半導體結構是採用氧化鋅為主要材料，而金屬玻璃薄膜則採用銅基金屬玻璃薄膜。
首先，在半導體結構之複數半導體奈米結構採用奈米柱形式之條件下，以不包括金屬玻璃薄膜之紫外光感測元件作為對照組A，以金屬玻璃薄膜（厚度為3nm）相對位於半導體結構上方之紫外光感測元件（對應圖3所示之前述第二實施例）作為實驗組B1，金屬玻璃薄膜（厚度為3nm）相對位於半導體結構下方且配合不同溫度之退火製程條件（時間為30分）之紫外光感測元件（對應圖1所示之前述第一實施例）作為實驗組B2-B4，分別以紫外光光源照射各紫外光感測元件，以量測並記錄各感測元件所產生之光電流、暗電流、訊雜比、響應時間及恢復時間等數據，如表1所示。此處訊雜比定義為以光電流除以暗電流之比值，電流之單位為安培(A)，而時間之單位為秒(S)。 表1 <TABLE border="1" borderColor="#000000" width="85%"><TBODY><tr><td> </td><td> 暗電流 </td><td> 光電流 </td><td> 訊雜比 </td><td> 響應時間(s) </td><td> 恢復時間(s) </td></tr><tr><td> 對照組A </td><td> 0.18 μA </td><td> 45.7 μA </td><td> 252.80 </td><td> 127 </td><td> 169 </td></tr><tr><td> 實驗組B1 </td><td> 59.60 pA </td><td> 0.40 μA </td><td> 6722.70 </td><td> 92 </td><td> 131 </td></tr><tr><td> 實驗組B2 (無退火) </td><td> 2.84 nA </td><td> 26.0 μA </td><td> 9162.15 </td><td> 87 </td><td> 55 </td></tr><tr><td> 實驗組B3 (退火150℃) </td><td> 0.60 nA </td><td> 14.8 μA </td><td> 24505.30 </td><td> 89 </td><td> 77 </td></tr><tr><td> 實驗組B4 (退火300℃) </td><td> 2.83 nA </td><td> 36.8 μA </td><td> 13006.70 </td><td> 82 </td><td> 57 </td></tr></TBODY></TABLE>
如表1所示，相較於對照組A，形成有金屬玻璃薄膜之任一實驗組B1-B4所量測到之訊雜比均明顯大幅度提升，其響應時間及恢復時間亦明顯縮短，足以證明藉由金屬玻璃薄膜本身之無晶界特性，且金屬玻璃薄膜與半導體結構之接觸面會形成蕭特基能障接面，其能障約0.65eV，可有效減少暗電流，因此只要紫外光感測元件形成有金屬玻璃薄膜，不論其相對於半導體結構之形成位置為何，均能有效抑制暗電流並提高訊雜比。
再者，經比較實驗組B1及B2後可發現，當金屬玻璃薄膜形成於半導體結構下方所量測到之訊雜比、響應時間及恢復時間，更優於金屬玻璃薄膜形成於半導體結構上方所量測到之相應數據，藉此可推知金屬玻璃薄膜形成於玻璃基板與半導體結構之間時具有更佳訊雜比提升效果。此外，經比較實驗組B2-B4後可發現，當金屬玻璃薄膜進行任一退火製程後所量測到之訊雜比、響應時間及恢復時間，亦優於金屬玻璃薄膜未進行退火製程所量測到之相應數據，顯見金屬玻璃薄膜之退火製程有助於提升金屬玻璃薄膜之非晶化效果；且於退火製程之溫度為150℃具有較佳效果，並未隨著溫度提高而更加提升。
在以下實驗中，在半導體結構之複數半導體奈米結構採用奈米管形式之條件下，其他針對實驗組及對照組之條件設定均等同前述表1之實驗條件，量測並記錄各感測元件所產生之光電流、暗電流、訊雜比、響應時間及恢復時間等數據，如表2所示。 表2 <TABLE border="1" borderColor="#000000" width="85%"><TBODY><tr><td> </td><td> 暗電流 </td><td> 光電流 </td><td> 訊雜比 </td><td> 響應時間(s) </td><td> 恢復時間(s) </td></tr><tr><td> 對照組A’ </td><td> 75.9 nA </td><td> 0.16 mA </td><td> 2033.55 </td><td> 143 </td><td> 123 </td></tr><tr><td> 實驗組B1’ </td><td> 0.18 nA </td><td> 0.83 μA </td><td> 7106.00 </td><td> 66 </td><td> 47 </td></tr><tr><td> 實驗組B2’ (無退火) </td><td> 0.26 nA </td><td> 5.13 μA </td><td> 19903.36 </td><td> 56 </td><td> 49 </td></tr><tr><td> 實驗組B3’ (退火150℃) </td><td> 0.17 nA </td><td> 33.2 μA </td><td> 200332.30 </td><td> 58 </td><td> 34 </td></tr><tr><td> 實驗組B4’ (退火300℃) </td><td> 0.27 nA </td><td> 42.0 μA </td><td> 155593.40 </td><td> 81 </td><td> 38 </td></tr></TBODY></TABLE>
如表2所示，其整體趨勢與表1相近，相較於對照組A’，形成有金屬玻璃薄膜之任一實驗組B1’-B4’所量測到之訊雜比同樣均明顯大幅度提升，其響應時間及恢復時間亦明顯縮短，且其數值更優於半導體奈米結構採用奈米柱形式之數值，可見得藉由奈米管相較於奈米柱能提供更多表面積及空乏區，更有助於整體抑制暗電流並提高訊雜比之效果。
在以下實驗中係用以探討金屬玻璃薄膜之厚度所造成之影響。在半導體結構之複數半導體奈米結構採用奈米柱形式之條件下，以金屬玻璃薄膜（厚度為3nm）相對位於半導體結構上方之紫外光感測元件（對應圖3所示之前述第二實施例）作為對照組C，金屬玻璃薄膜相對位於半導體結構上方且配合不同厚度條件之紫外光感測元件（對應圖3所示之前述第二實施例）作為實驗組D1-D3，分別以紫外光光源照射各紫外光感測元件，以量測並記錄各感測元件所產生之光電流、暗電流及訊雜比等數據，如表3所示。 表3 <TABLE border="1" borderColor="#000000" width="85%"><TBODY><tr><td> </td><td> 暗電流(A) </td><td> 光電流(A) </td><td> 訊雜比 </td></tr><tr><td> 對照組C (厚度3nm) </td><td> 5.96E-11 </td><td> 4.00E-07 </td><td> 6722.70 </td></tr><tr><td> 實驗組D1 (厚度6nm) </td><td> 2.03E-10 </td><td> 7.38E-07 </td><td> 3634.23 </td></tr><tr><td> 實驗組D2 (厚度10nm) </td><td> 7.06E-09 </td><td> 6.67E-06 </td><td> 943.98 </td></tr><tr><td> 實驗組D3 (厚度15nm) </td><td> 2.57E-09 </td><td> 1.71E-06 </td><td> 663.75 </td></tr></TBODY></TABLE>
如表3所示，雖然對照組C及任一實驗組D1-D3所量測到之訊雜比數據均優於表1中不含有金屬玻璃薄膜之對照組A，然而依據表3中所呈現之實驗結果顯示，以金屬玻璃薄膜相對位於半導體結構上方之紫外光感測元件而言，其訊雜比反而隨著金屬玻璃薄膜之厚度增加而下降。
在以下實驗中，在半導體結構之複數半導體奈米結構採用奈米管形式之條件下，其他針對實驗組及對照組之條件設定均等同前述表3之實驗條件，量測並記錄各感測元件所產生之光電流、暗電流及訊雜比等數據，如表4所示。 表4 <TABLE border="1" borderColor="#000000" width="85%"><TBODY><tr><td> </td><td> 暗電流(A) </td><td> 光電流(A) </td><td> 訊雜比 </td></tr><tr><td> 對照組C’ (厚度3nm) </td><td> 1.17E-10 </td><td> 8.28E-07 </td><td> 7106.00 </td></tr><tr><td> 實驗組D1’ (厚度6nm) </td><td> 5.11E-10 </td><td> 2.65E-06 </td><td> 5178.83 </td></tr><tr><td> 實驗組D2’ (厚度10nm) </td><td> 1.20E-09 </td><td> 2.30E-06 </td><td> 1923.48 </td></tr><tr><td> 實驗組D3’ (厚度15nm) </td><td> 4.83E-09 </td><td> 2.48E-06 </td><td> 514.08 </td></tr></TBODY></TABLE>
如表4所示，隨著金屬玻璃薄膜之厚度增加，僅對照組C’及實驗組D1所量測到之訊雜比數據優於表2中不含有金屬玻璃薄膜之對照組A’，而金屬玻璃薄膜之厚度到達10nm或以上時，以金屬玻璃薄膜相對位於半導體結構上方之紫外光感測元件而言，其訊雜比反而低於不包含金屬玻璃薄膜之紫外光感測元件。據此，金屬玻璃薄膜之厚度應低於10nm，較佳者應不大於6nm。
在以下實驗中係用以一併探討金屬玻璃薄膜之厚度及進行退火製程與否所造成之影響。在半導體結構之複數半導體奈米結構採用奈米柱形式之條件下，以金屬玻璃薄膜（厚度為3nm）相對位於半導體結構下方之紫外光感測元件（對應圖1所示之前述第一實施例）作為對照組E，金屬玻璃薄膜相對位於半導體結構下方且配合不同厚度條件之紫外光感測元件（對應圖1所示之前述第一實施例）作為實驗組F1-F3，分別在經過不同退火製程條件下以紫外光光源照射各紫外光感測元件，量測並記錄各感測元件所產生之光電流、暗電流及訊雜比等數據，如表5所示。 表5 <TABLE border="1" borderColor="#000000" width="85%"><TBODY><tr><td> 無退火 </td><td> 暗電流(A) </td><td> 光電流(A) </td><td> 訊雜比 </td></tr><tr><td> 對照組E (厚度3nm) </td><td> 2.84E-09 </td><td> 2.60E-05 </td><td> 9162.15 </td></tr><tr><td> 實驗組F1 (厚度6nm) </td><td> 4.38E-09 </td><td> 2.89E-05 </td><td> 6602.55 </td></tr><tr><td> 實驗組F2 (厚度10nm) </td><td> 3.18E-09 </td><td> 1.68E-05 </td><td> 5278.11 </td></tr><tr><td> 實驗組F3 (厚度15nm) </td><td> 9.52E-09 </td><td> 3.53E-05 </td><td> 3704.75 </td></tr><tr><td> 退火150℃ </td><td> 暗電流(A) </td><td> 光電流(A) </td><td> 訊雜比 </td></tr><tr><td> 對照組E (厚度3nm) </td><td> 6.02E-10 </td><td> 1.48E-05 </td><td> 24505.30 </td></tr><tr><td> 實驗組F1 (厚度6nm) </td><td> 3.64E-09 </td><td> 5.93E-05 </td><td> 16299.82 </td></tr><tr><td> 實驗組F2 (厚度10nm) </td><td> 1.10E-09 </td><td> 1.42E-05 </td><td> 12971.37 </td></tr><tr><td> 實驗組F3 (厚度15nm) </td><td> 4.85E-09 </td><td> 3.90E-05 </td><td> 8032.16 </td></tr><tr><td> 退火300℃ </td><td> 暗電流(A) </td><td> 光電流(A) </td><td> 訊雜比 </td></tr><tr><td> 對照組E (厚度3nm) </td><td> 2.83E-09 </td><td> 3.68E-05 </td><td> 13006.70 </td></tr><tr><td> 實驗組F1 (厚度6nm) </td><td> 4.08E-09 </td><td> 3.30E-05 </td><td> 8090.82 </td></tr><tr><td> 實驗組F2 (厚度10nm) </td><td> 5.45E-09 </td><td> 3.57E-05 </td><td> 6557.41 </td></tr><tr><td> 實驗組F3 (厚度15nm) </td><td> 1.84E-08 </td><td> 9.27E-05 </td><td> 5024.67 </td></tr></TBODY></TABLE>
如表5所示，雖然對照組E及任一實驗組F1-F3在不同退火條件下所量測到之訊雜比數據均優於表1中不含有金屬玻璃薄膜之對照組A，然而依據表5中所呈現之實驗結果顯示，以金屬玻璃薄膜相對位於半導體結構下方之紫外光感測元件而言，在相同退火條件下其訊雜比反而隨著金屬玻璃薄膜之厚度增加而下降；而在相同金屬玻璃薄膜之厚度條件下，經退火製程後之金屬玻璃薄膜所測得之訊雜比均優於未經退火製程之金屬玻璃薄膜所測得之訊雜比，但其訊雜比並不會隨著退火溫度增加而提升。
在以下實驗中，在半導體結構之複數半導體奈米結構採用奈米管形式之條件下，其他針對實驗組及對照組之條件設定均等同前述表5之實驗條件，量測並記錄各感測元件所產生之光電流、暗電流及訊雜比等數據，如表6所示。 表6 <TABLE border="1" borderColor="#000000" width="85%"><TBODY><tr><td> 無退火 </td><td> 暗電流(A) </td><td> 光電流(A) </td><td> 訊雜比 </td></tr><tr><td> 對照組E’ (厚度3nm) </td><td> 2.58E-10 </td><td> 5.13E-06 </td><td> 19903.36 </td></tr><tr><td> 實驗組F1’ (厚度6nm) </td><td> 7.07E-09 </td><td> 6.46E-05 </td><td> 9137.99 </td></tr><tr><td> 實驗組F2’ (厚度10nm) </td><td> 6.43E-10 </td><td> 4.42E-06 </td><td> 6878.68 </td></tr><tr><td> 實驗組F3’ (厚度15nm) </td><td> 1.24E-08 </td><td> 2.77E-05 </td><td> 2233.63 </td></tr><tr><td> 退火150℃ </td><td> 暗電流(A) </td><td> 光電流(A) </td><td> 訊雜比 </td></tr><tr><td> 對照組E’ (厚度3nm) </td><td> 1.65E-10 </td><td> 3.32E-05 </td><td> 200332.30 </td></tr><tr><td> 實驗組F1’ (厚度6nm) </td><td> 1.29E-10 </td><td> 1.12E-05 </td><td> 86948.42 </td></tr><tr><td> 實驗組F2’ (厚度10nm) </td><td> 6.65E-10 </td><td> 2.43E-05 </td><td> 36454.76 </td></tr><tr><td> 實驗組F3’ (厚度15nm) </td><td> 3.40E-09 </td><td> 4.86E-05 </td><td> 14312.36 </td></tr><tr><td> 退火300℃ </td><td> 暗電流(A) </td><td> 光電流(A) </td><td> 訊雜比 </td></tr><tr><td> 對照組E’ (厚度3nm) </td><td> 2.70E-10 </td><td> 4.20E-05 </td><td> 155593.40 </td></tr><tr><td> 實驗組F1’ (厚度6nm) </td><td> 8.84E-10 </td><td> 5.82E-05 </td><td> 65759.36 </td></tr><tr><td> 實驗組F2’ (厚度10nm) </td><td> 9.06E-11 </td><td> 1.96E-06 </td><td> 21608.70 </td></tr><tr><td> 實驗組F3’ (厚度15nm) </td><td> 1.39E-10 </td><td> 1.23E-06 </td><td> 8846.79 </td></tr></TBODY></TABLE>
如表6所示，雖然對照組E’及任一實驗組F1’-F3’在不同退火條件下所量測到之訊雜比數據均優於表2中不含有金屬玻璃薄膜之對照組A’，然而依據表6中所呈現之實驗結果顯示，以金屬玻璃薄膜相對位於半導體結構下方之紫外光感測元件而言，在相同退火條件下其訊雜比隨著金屬玻璃薄膜之厚度增加而下降；而在相同金屬玻璃薄膜之厚度條件下，經退火製程後之金屬玻璃薄膜所測得之訊雜比均優於未經退火製程之金屬玻璃薄膜所測得之訊雜比，但其訊雜比並未隨著退火溫度增加而提升。據此，相較於金屬玻璃薄膜之厚度變化，金屬玻璃薄膜經退火製程與否反而對紫外光感測元件之訊雜比影響更大，且金屬玻璃薄膜經退火製程後能有效提升紫外光感測元件之訊雜比。
綜上所述，本發明之紫外光感測元件1、1a藉由形成與半導體結構接觸之金屬玻璃薄膜，利用金屬玻璃薄膜本身特性，將使得金屬玻璃薄膜與半導體結構之連接面產生蕭特基能障接面，進而有效抑制暗電流以提升訊雜比，且製程簡單，無毒無害。
此外，本發明更包括前述紫外光感測元件1之製造方法。
以上實施方式本質上僅為輔助說明，且並不欲用以限制申請標的之實施例或該等實施例的應用或用途。此外，儘管已於前述實施方式中提出至少一例示性實施例，但應瞭解本發明仍可存在大量的變化。同樣應瞭解的是，本文所述之實施例並不欲用以透過任何方式限制所請求之申請標的之範圍、用途或組態。相反的，前述實施方式將可提供本領域具有通常知識者一種簡便的指引以實施所述之一或多種實施例。再者，可對元件之功能與排列進行各種變化而不脫離申請專利範圍所界定的範疇，且申請專利範圍包含已知的均等物及在本專利申請案提出申請時的所有可預見均等物。
1、1a‧‧‧ 紫外光感測元件
10‧‧‧玻璃基板
20‧‧‧半導體結構
21‧‧‧半導體種子層
22‧‧‧半導體奈米結構
30‧‧‧電極層
40、40a‧‧‧金屬玻璃薄膜
S1~S6‧‧‧步驟
圖1為本發明之紫外光感測元件第一實施例之結構示意圖。 圖2為本發明之紫外光感測元件製造方法之流程圖。 圖3為本發明之紫外光感測元件第二實施例之結構示意圖。
1‧‧‧紫外光感測元件
10‧‧‧玻璃基板
20‧‧‧半導體結構
21‧‧‧半導體種子層
22‧‧‧半導體奈米結構
30‧‧‧電極層
40‧‧‧金屬玻璃薄膜

Claims (9)

  1. 一種紫外光感測元件，包括：一玻璃基板；一半導體結構，包括形成於該玻璃基板上之一半導體種子層及形成於該半導體種子層上之複數半導體奈米結構；一電極層，形成於該半導體種子層及該複數半導體奈米結構之間；以及一銅基金屬玻璃薄膜，接觸該半導體結構，其中藉由該銅基金屬玻璃薄膜與該半導體結構之接觸面形成蕭特基能障接面，以抑制暗電流之產生並提高訊雜比。
  2. 如請求項1所述之紫外光感測元件，其中該銅基金屬玻璃薄膜藉由執行一退火製程以提升非晶化效果。
  3. 如請求項1所述之紫外光感測元件，其中該銅基金屬玻璃薄膜位於該玻璃基板與該半導體種子層之間。
  4. 如請求項1所述之紫外光感測元件，其中該銅基金屬玻璃薄膜形成於該該複數半導體奈米結構上。
  5. 如請求項1所述之紫外光感測元件，其中各該半導體奈米結構為一奈米管或一奈米柱。
  6. 如請求項1所述之紫外光感測元件，其中各該半導體奈米結構與該半導體種子層實質上垂直。
  7. 如請求項1所述之紫外光感測元件，其中該銅基金屬玻璃薄膜為一非連續結構。
  8. 一種紫外光感測元件製造方法，包括以下步驟： 提供一玻璃基板；於該玻璃基板上形成一銅基金屬玻璃薄膜；於該銅基金屬玻璃薄膜上形成一半導體種子層；於該半導體種子層上形成一電極層；以及於該電極層上形成複數半導體奈米結構。
  9. 如請求項8所述之紫外光感測元件製造方法，其中於形成該半導體種子層之前更包括以下步驟：執行一退火製程以提升該銅基金屬玻璃薄膜之非晶化效果。
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