JP5161521B2 - 太陽電池および太陽電池を製造する方法 - Google Patents
太陽電池および太陽電池を製造する方法 Download PDFInfo
- Publication number
- JP5161521B2 JP5161521B2 JP2007237353A JP2007237353A JP5161521B2 JP 5161521 B2 JP5161521 B2 JP 5161521B2 JP 2007237353 A JP2007237353 A JP 2007237353A JP 2007237353 A JP2007237353 A JP 2007237353A JP 5161521 B2 JP5161521 B2 JP 5161521B2
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- atomic layer
- layer
- atomic
- zinc oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 94
- 239000011787 zinc oxide Substances 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 42
- 230000015572 biosynthetic process Effects 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 31
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 238000002161 passivation Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 15
- 238000012545 processing Methods 0.000 claims description 12
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 9
- 239000002243 precursor Substances 0.000 claims description 8
- 239000011701 zinc Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 230000002265 prevention Effects 0.000 claims 2
- 239000010410 layer Substances 0.000 description 157
- 239000010409 thin film Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000004227 thermal cracking Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 235000015096 spirit Nutrition 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Description
1.キャリアガスを使用してH2O分子を反応室に運び、それによってH2O分子が基板表面に吸収されてOHラジカルの層が形成される。露出時間は0.1秒である。
2.キャリアガスを使用して、基板表面に吸収されなかったH2O分子をパージする。パージ時間は5秒である。
3.キャリアガスを使用してDEZn分子を反応室に運び、それによってDEZn分子が基板表面に吸収されたOHラジカルと反応して、1つのZnO単一層が形成される。露出時間は0.1秒である。
4.キャリアガスを使用して残っているDEZn分子および反応の副産物をパージする。パージ時間は5秒である。
22 半導体構造結合体
24 原子層多層構造
26 透明導電層
28 バックリフレクタ
222 pn接合
226 表面
224 被照面
242 酸化亜鉛層
244 酸化アルミニウム層
Claims (12)
- 少なくとも1つのpn接合を含み、被照面を有する半導体構造結合体と、
酸化亜鉛および酸化アルミニウムで形成され、前記半導体構造結合体の前記被照面を覆う原子層多層構造であって、前記酸化亜鉛は、室温〜400℃の範囲の処理温度で行われる第1の原子層形成プロセスによって形成され、前記酸化アルミニウムは室温〜400℃の範囲の処理温度で行われる第2の原子層形成プロセスによって形成され、Nを自然数とする、N層の前記酸化アルミニウムの原子層と、数十又は数百層の前記酸化亜鉛原子層とを、交互に形成した構造であり、表面パッシベーション層および透明導電層として機能する原子層多層構造と、
を備える太陽電池。 - 前記第2の原子層形成プロセスでの前記酸化アルミニウムの前駆物質はTMA(トリメチルアルミニウム)およびH2OまたはO3である、請求項1に記載の太陽電池。
- 前記原子多層構造は、[Al/(Al+Zn)]×100%で定義されるアルミニウム含有率が0〜5%の範囲であって、屈折率がおよそ1.95となるアルミニウム含有率であり、反射防止層の機能を提供するような塗布厚を有する、請求項1に記載の太陽電池。
- 前記第1の原子層形成プロセスでの前記酸化亜鉛の前駆物質は、DEZn(ジエチル亜鉛)およびH2OまたはO3である、請求項1に記載の太陽電池。
- 前記半導体構造結合体はシリコン基板も含む、請求項1に記載の太陽電池。
- 前記半導体構造結合体の前記被照面には表面テクスチャ加工処理が施される、請求項1に記載の太陽電池。
- 少なくとも1つのpn接合を含み、被照面を有する半導体構造結合体を形成するステップと、酸化亜鉛および酸化アルミニウムで形成され、前記半導体構造結合体の前記被照面を覆う原子層多層構造であって、前記酸化亜鉛は、室温〜400℃の範囲の処理温度で行われる第1の原子層形成プロセスによって形成され、前記酸化アルミニウムは室温〜400℃の範囲の処理温度で行われる第2の原子層形成プロセスによって形成され、Nを自然数とする、N層の前記酸化アルミニウムの原子層と、数十又は数百層の前記酸化亜鉛原子層とを、交互に形成した構造であり、表面パッシベーション層および透明導電層として機能する原子層多層構造を形成するステップと、を含む太陽電池を製造する方法。
- 前記第2の原子層形成プロセスでの前記酸化アルミニウムの前駆物質はTMA(トリメチルアルミニウム)およびH2OまたはO3である、請求項7に記載の太陽電池を製造する方法。
- 前記原子多層構造は、[Al/(Al+Zn)]×100%で定義されるアルミニウム含有率が0〜5%の範囲であって、屈折率がおよそ1.95となるアルミニウム含有率であり、反射防止層の機能を提供するような塗布厚を有する、請求項7に記載の太陽電池を製造する方法。
- 前記第1の原子層形成プロセスでの前記酸化亜鉛の前駆物質は、DEZn(ジエチル亜鉛)およびH2OまたはO3である、請求項7に記載の太陽電池を製造する方法。
- 前記半導体構造結合体はシリコン基板も含む、請求項7に記載の太陽電池を製造する方法。
- 前記半導体構造結合体の前記被照面には表面テクスチャ加工処理が施される、請求項7に記載の太陽電池を製造する方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW095135676A TWI320974B (en) | 2006-09-27 | 2006-09-27 | Solar cell and method of fabircating the same |
TW095135676 | 2006-09-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008085327A JP2008085327A (ja) | 2008-04-10 |
JP5161521B2 true JP5161521B2 (ja) | 2013-03-13 |
Family
ID=39223632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007237353A Expired - Fee Related JP5161521B2 (ja) | 2006-09-27 | 2007-09-13 | 太陽電池および太陽電池を製造する方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8110739B2 (ja) |
JP (1) | JP5161521B2 (ja) |
TW (1) | TWI320974B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101467237B1 (ko) * | 2013-07-01 | 2014-12-01 | 성균관대학교산학협력단 | 반도성 박막과 절연성 박막으로 적층형성된 초격자구조 박막이 구비된 반도체소자 |
CN114059041A (zh) * | 2020-08-05 | 2022-02-18 | 深圳市捷佳伟创新能源装备股份有限公司 | 镀膜方法、光伏电池以及镀膜设备 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI414625B (zh) * | 2008-12-19 | 2013-11-11 | Sun Well Solar Corp | 使用原子層沉積法形成透明導電薄膜的方法 |
DE102008064685A1 (de) * | 2008-12-19 | 2010-12-16 | Q-Cells Se | Solarzelle |
TWI447917B (zh) * | 2009-01-10 | 2014-08-01 | Nexpower Technology Corp | 薄膜太陽能電池及其前電極層之製作方法 |
MY186820A (en) * | 2009-04-21 | 2021-08-23 | Tetrasun Inc | High-efficiency solar cell structures and methods of manufacture |
KR102247785B1 (ko) | 2009-09-18 | 2021-05-20 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 태양전지, 그 제조방법 및 태양전지 모듈 |
US8294027B2 (en) | 2010-01-19 | 2012-10-23 | International Business Machines Corporation | Efficiency in antireflective coating layers for solar cells |
EP2553735B1 (en) | 2010-03-26 | 2017-11-15 | Tetrasun, Inc. | Shielded electrical contact and doping through a passivating dielectric layer in a high-efficiency crystalline solar cell, including structure and methods of manufacture |
ES2923774T3 (es) * | 2010-05-21 | 2022-09-30 | Asm Int Nv | Método de fabricación de una celda solar |
DE102010017155B4 (de) * | 2010-05-31 | 2012-01-26 | Q-Cells Se | Solarzelle |
WO2012061152A2 (en) | 2010-10-25 | 2012-05-10 | California Institute Of Technology | Atomically precise surface engineering for producing imagers |
DE102010060339A1 (de) * | 2010-11-04 | 2012-05-10 | Q-Cells Se | Solarzelle und Solarzellenherstellungsverfahren |
US20120255612A1 (en) * | 2011-04-08 | 2012-10-11 | Dieter Pierreux | Ald of metal oxide film using precursor pairs with different oxidants |
FI20116217A (fi) * | 2011-12-02 | 2013-06-03 | Beneq Oy | Piitä sisältävä n-tyypin aurinkokennopari |
KR101889775B1 (ko) * | 2012-09-27 | 2018-08-20 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
JP2014075440A (ja) * | 2012-10-03 | 2014-04-24 | Hyogo Prefecture | 界面安定化膜を備えた太陽電池 |
WO2014080080A1 (en) * | 2012-11-22 | 2014-05-30 | Beneq Oy | Method for fabricating a passivation film on a crystalline silicon surface |
ES2894747T3 (es) * | 2013-09-03 | 2022-02-15 | Segton Adt Sas | Unidad de plataforma de conversión multiplicadora de todo el espectro solar para una conversión óptima de luz en electricidad |
EP3221898B1 (en) * | 2014-11-21 | 2020-05-27 | Hunt Perovskite Technologies, L.L.C. | Bi-and tri-layer interfacial layers in perovskite material devices |
US9673341B2 (en) | 2015-05-08 | 2017-06-06 | Tetrasun, Inc. | Photovoltaic devices with fine-line metallization and methods for manufacture |
KR101610895B1 (ko) * | 2015-06-30 | 2016-04-08 | 성균관대학교산학협력단 | 원자층 접합 산화물 및 이의 제조 방법 |
KR102253547B1 (ko) * | 2018-11-29 | 2021-05-18 | 울산과학기술원 | 무색 투명 반도체 기판 및 이의 제조방법 |
CN109829203B (zh) * | 2019-01-07 | 2020-11-24 | 重庆大学 | 一种建筑空间膜结构中织物基材的生产方法 |
JP7170273B2 (ja) * | 2019-06-06 | 2022-11-14 | 日本電信電話株式会社 | 強誘電体薄膜およびその製造方法ならびにデバイス |
CN113964229A (zh) * | 2021-10-09 | 2022-01-21 | 国家电投集团科学技术研究院有限公司 | 背接触异质结电池及其制备方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4623601A (en) * | 1985-06-04 | 1986-11-18 | Atlantic Richfield Company | Photoconductive device containing zinc oxide transparent conductive layer |
JP4341124B2 (ja) * | 1999-11-25 | 2009-10-07 | ソニー株式会社 | 半導体装置の製造方法 |
JP4362919B2 (ja) * | 2000-02-04 | 2009-11-11 | 株式会社デンソー | 原子層エピタキシャル成長法による成膜方法 |
US6822158B2 (en) * | 2002-03-11 | 2004-11-23 | Sharp Kabushiki Kaisha | Thin-film solar cell and manufacture method therefor |
JP4048830B2 (ja) * | 2002-05-16 | 2008-02-20 | 株式会社デンソー | 有機電子デバイス素子 |
JP4062981B2 (ja) * | 2002-06-14 | 2008-03-19 | 株式会社デンソー | 有機el素子 |
US20050056312A1 (en) * | 2003-03-14 | 2005-03-17 | Young David L. | Bifacial structure for tandem solar cells |
EP1555695B1 (en) * | 2004-01-13 | 2011-05-04 | Sanyo Electric Co., Ltd. | Photovoltaic device |
JP2005353836A (ja) * | 2004-06-10 | 2005-12-22 | Kyocera Corp | 太陽電池素子及びこれを用いた太陽電池モジュール |
-
2006
- 2006-09-27 TW TW095135676A patent/TWI320974B/zh not_active IP Right Cessation
-
2007
- 2007-08-29 US US11/896,087 patent/US8110739B2/en not_active Expired - Fee Related
- 2007-09-13 JP JP2007237353A patent/JP5161521B2/ja not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101467237B1 (ko) * | 2013-07-01 | 2014-12-01 | 성균관대학교산학협력단 | 반도성 박막과 절연성 박막으로 적층형성된 초격자구조 박막이 구비된 반도체소자 |
CN114059041A (zh) * | 2020-08-05 | 2022-02-18 | 深圳市捷佳伟创新能源装备股份有限公司 | 镀膜方法、光伏电池以及镀膜设备 |
Also Published As
Publication number | Publication date |
---|---|
US8110739B2 (en) | 2012-02-07 |
TWI320974B (en) | 2010-02-21 |
TW200816500A (en) | 2008-04-01 |
JP2008085327A (ja) | 2008-04-10 |
US20080072959A1 (en) | 2008-03-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5161521B2 (ja) | 太陽電池および太陽電池を製造する方法 | |
JP5283378B2 (ja) | 薄膜太陽電池および製造方法 | |
US20090194165A1 (en) | Ultra-high current density cadmium telluride photovoltaic modules | |
US9153730B2 (en) | Solar cell front contact doping | |
JP2009283886A (ja) | 高性能な光電デバイス | |
KR20100023759A (ko) | 태양 전지 기판 및 제조 방법 | |
US20140000703A1 (en) | Thin Film Article and Method for Forming a Reduced Conductive Area in Transparent Conductive Films for Photovoltaic Modules | |
JP4789131B2 (ja) | 太陽電池及び太陽電池の製造方法 | |
CA2716361A1 (en) | Insulating glass unit with integrated mini-junction device | |
JP3025392B2 (ja) | 薄膜太陽電池とその製造方法 | |
TWI578552B (zh) | 太陽能電池、太陽能電池組及其製備方法 | |
KR101186242B1 (ko) | 입체 패턴을 갖는 광전 소자 및 이의 제조 방법 | |
KR101076545B1 (ko) | 실리콘 이종접합 태양전지 및 그 제조 방법 | |
TW201115760A (en) | Thin film photovoltaic device and manufacturing process thereof | |
TW201025653A (en) | Solar battery and manufacturing method thereof | |
KR101134730B1 (ko) | 태양전지 및 이의 제조방법 | |
JP5405923B2 (ja) | 光電変換素子及びその製造方法 | |
KR101151413B1 (ko) | 이중 반사 방지막을 갖는 태양 전지 및 그 제조 방법 | |
KR20180013787A (ko) | 실리콘 태양전지, 및 그 제조 방법 | |
Ding et al. | Photovoltaics: Nanoengineered Materials and Their Functionality in Solar Cells | |
Rehman et al. | A Simple Method to Produce an Aluminum Oxide‐Passivated Tungsten Diselenide/n‐Type Si Heterojunction Solar Cell with High Power Conversion Efficiency | |
JP5022246B2 (ja) | 多接合型シリコン系薄膜光電変換装置 | |
JPS5994472A (ja) | 光電変換半導体装置の作製方法 | |
Bryan | Metallization to Silicon Solar Cells: Improving Optothermal Performance of PERC and Developing New Systems for TOPCon and SHJ | |
KR101738785B1 (ko) | 실리콘 태양전지, 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100825 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100907 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101202 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111220 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120320 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120326 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120419 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121204 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121214 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5161521 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151221 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |