JP2006261678A5 - - Google Patents

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Publication number
JP2006261678A5
JP2006261678A5 JP2006074510A JP2006074510A JP2006261678A5 JP 2006261678 A5 JP2006261678 A5 JP 2006261678A5 JP 2006074510 A JP2006074510 A JP 2006074510A JP 2006074510 A JP2006074510 A JP 2006074510A JP 2006261678 A5 JP2006261678 A5 JP 2006261678A5
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JP
Japan
Prior art keywords
linear semiconductor
film transistor
insulating film
thin film
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006074510A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006261678A (ja
JP5403854B2 (ja
Filing date
Publication date
Priority claimed from KR1020050022379A external-priority patent/KR101100887B1/ko
Application filed filed Critical
Publication of JP2006261678A publication Critical patent/JP2006261678A/ja
Publication of JP2006261678A5 publication Critical patent/JP2006261678A5/ja
Application granted granted Critical
Publication of JP5403854B2 publication Critical patent/JP5403854B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006074510A 2005-03-17 2006-03-17 薄膜トランジスタ、薄膜トランジスタ表示板及びその製造方法 Expired - Fee Related JP5403854B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050022379A KR101100887B1 (ko) 2005-03-17 2005-03-17 박막 트랜지스터, 박막 트랜지스터 표시판 및 그 제조 방법
KR10-2005-0022379 2005-03-17

Publications (3)

Publication Number Publication Date
JP2006261678A JP2006261678A (ja) 2006-09-28
JP2006261678A5 true JP2006261678A5 (enExample) 2009-04-23
JP5403854B2 JP5403854B2 (ja) 2014-01-29

Family

ID=37030692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006074510A Expired - Fee Related JP5403854B2 (ja) 2005-03-17 2006-03-17 薄膜トランジスタ、薄膜トランジスタ表示板及びその製造方法

Country Status (5)

Country Link
US (2) US7910930B2 (enExample)
JP (1) JP5403854B2 (enExample)
KR (1) KR101100887B1 (enExample)
CN (1) CN1841780B (enExample)
TW (1) TWI378561B (enExample)

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US7999251B2 (en) * 2006-09-11 2011-08-16 International Business Machines Corporation Nanowire MOSFET with doped epitaxial contacts for source and drain
KR100858223B1 (ko) * 2007-05-21 2008-09-10 연세대학교 산학협력단 자가정렬된 반도체 나노와이어 박막 트랜지스터 및 그 제조 방법
TWI427357B (zh) * 2010-06-30 2014-02-21 Au Optronics Corp 顯示面板的製造方法
CN101916733B (zh) * 2010-07-12 2012-07-04 友达光电股份有限公司 显示面板的制造方法
CN103926760B (zh) * 2013-01-14 2017-08-25 瀚宇彩晶股份有限公司 像素结构及像素阵列基板
CN105023898B (zh) * 2014-04-21 2017-12-08 台达电子工业股份有限公司 半导体装置封装体
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US10948470B2 (en) * 2016-04-29 2021-03-16 TricornTech Taiwan System and method for in-line monitoring of airborne contamination and process health
CN113471298A (zh) * 2021-06-23 2021-10-01 Tcl华星光电技术有限公司 薄膜晶体管、显示面板及电子设备

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