CN102598230B - Mofet的掩模层级减少 - Google Patents

Mofet的掩模层级减少 Download PDF

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CN102598230B
CN102598230B CN201080050111.3A CN201080050111A CN102598230B CN 102598230 B CN102598230 B CN 102598230B CN 201080050111 A CN201080050111 A CN 201080050111A CN 102598230 B CN102598230 B CN 102598230B
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oxide semiconductor
metal oxide
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谢泉隆
黄鸿发
俞钢
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Abc Service Co
Fantasy Shine Co ltd
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Abstract

一种利用减少的掩模操作制作用于有源矩阵显示器的薄膜晶体管的方法，包括在衬底上构图栅极。在该栅极上方形成栅极电介质，并且在该栅极电介质上沉积半导体金属氧化物。在叠盖栅极的半导体金属氧化物上构图沟道保护层，以限定沟道区并暴露剩余的半导体金属氧化物。在该结构上沉积源极/漏极金属层，并蚀刻穿过到达栅极上方的沟道保护层，以将源极/漏极金属层分开为源极端子和漏极端子，并且在外围蚀刻贯穿源极/漏极金属层和半导体金属氧化物以隔绝该晶体管。在该晶体管和周边的源极/漏极金属层的部分上，构图非导电间隔物。

Description

MOFET的掩模层级减少
技术领域
本发明主要涉及一种在有源矩阵生产中减少掩模数目的工艺。
背景技术
在有源矩阵液晶显示器（AMLCD）和有源矩阵有机发光显示器（AMOLED）中，存在用于不同功能的导电层的需求。例如，对于扫描线需要一个金属层，而对于数据线需要另一个金属层。这两种线彼此交叉，并且不能在同一金属层级步骤期间形成。用于数据线和扫描线的金属线的电导率是非常关键的，并且因为电导率的要求，不能由电导率相对低的透明材料制成。而且，需要透明导电层作为透射式LCD或底部发光OLED的电极。将透明导体与其它金属线结合或形成是不容易的。金属线中的每一种都需要用分开的光刻步骤构图，并有助于掩模层级的数目。而且，在制作AMLCD和AMOLED时，存在另外的掩模层级，其用于间隔物（在AMLCD的情况下）或触排（bank）（在AMOLED的情况下）的形成。应该理解，这些触排或间隔物用来分开完整显示器中的不同层，例如，底板与发光层。工艺中的每个掩模层级都增加了工艺的复杂度和成本。
因此，修补现有技术中固有的上述和其它缺点是非常有利的。
从而，本发明的目的是提供一种新的和改进的AMLCD和AMOLED制作工艺，其中减少了掩模层级的数目。
发明内容
简要地，根据当前发明的优选实施例，为了实现其期望的目的，提供了一种以减少的掩模操作制作用于有源矩阵显示器的薄膜晶体管的方法。该方法包括提供具有表面的衬底并在该衬底表面上构图栅极金属以限定薄膜晶体管栅极（第一掩模层级）的步骤。在该栅极和周边的衬底表面上方形成栅极电介质的层，并且在该栅极电介质的层上沉积半导体金属氧化物的层。在叠盖该栅极的半导体金属氧化物上，构图沟道保护层。构图该沟道保护层，以在该栅极上方的半导体金属氧化物中限定沟道区，并暴露剩余的半导体金属氧化物（第二掩模层级）。在该沟道保护层和暴露的半导体金属氧化物上沉积至少源极/漏极金属层的层。单一蚀刻步骤包括蚀刻穿过在该栅极上方源极/漏极金属层直到沟道保护层，以将源极/漏极金属层分开为薄膜晶体管源极端子和漏极端子，并蚀刻穿过外围的源极/漏极金属层和半导体金属氧化物，以隔绝薄膜晶体管（第三掩模层级）。在该隔绝的薄膜晶体管和周边的源极/漏极金属层上沉积非导电间隔物层，并蚀刻以限定与薄膜晶体管相邻的光透射区，并暴露光透射区中的透明电极（第四掩模层级）。
当前发明的期望目的进一步实现为一种用减少的掩模操作制作用于有源矩阵显示器的一对互连薄膜晶体管的方法。该方法包括提供具有表面的衬底，并在衬底表面上构图栅极金属，以限定两个间隔开的薄膜晶体管栅极。在该栅极上方形成阻挡金属的层，并在该栅极中的一个的上方的阻挡金属的表面上构图通孔掩模以限定通孔。该通孔掩模用于保护该阻挡金属免受蚀刻和阳极化以形成通孔。回流该通孔掩模，以覆盖通孔侧边，并阳极化栅极的金属，以在该栅极的表面上限定阳极化的金属的层。移除该通孔掩模以暴露通孔。形成与栅极中的每一个相关的沟道和源极/漏极端子，并通过通孔将栅极中的一个连接到另一个栅极的源极/漏极端子。
附图说明
结合附图，由下面的本发明的优选实施例的详细描述，对于本领域的技术人员来说，本发明的上文和其它以及更具体的目的和优点将变得更显而易见，其中：
图1是有源矩阵液晶显示器（AMLCD）中的单个LCD元件的示意图；
图2是有源矩阵有机发光显示器（AMOLED）中的单个OLED元件的示意图；
图3至图6是图示用于制作有源矩阵显示器的工艺中的顺序步骤的简化截面图；和
图7至图11是图示用于制作有源矩阵显示器中的通孔的工艺中的顺序步骤的简化截面图。
具体实施方式
如上述简要说明的，对于扫描线需要一个金属层，而对于数据线需要另一个金属层。而且，在形成用于AMLCD的间隔物和用于形成AMOLED的触排时，使用另外的掩模层级。通过结合S/D金属层级掩模和该另外的掩模，可以在不使用另外的掩模的情况下，形成对于LCD或OLED必需的透明导体。除去该掩模层级，基本改进了工艺并降低了成本。下面详细列出了除去了该掩模层级的工艺。
具体参考图1，图示了AMLCD中典型单个元件的示意图。该单个元件包括LCD、存储电容器和薄膜晶体管（TFT）驱动器。该TFT通过连接到栅极的扫描线和连接到源极/漏极（S/D）端子的数据线而被激活或控制。虽然可利用AMLCD的其它变形，但是所有变形通常都需要分开的扫描线和数据线以及透明导体。除了用于AMLCD，图1中示出的像素驱动电路也可以用于驱动EPD，并且用于2D图像阵列中的像素读出。
具体参考图2，图示了AMOLED中典型单个元件的示意图。该单个元件包括OLED、存储电容器和（在本实例中）薄膜晶体管（TFT）控制器和TFT驱动器。该TFT控制器通过连接到栅极的扫描线和连接到源极/漏极（S/D）端子的数据线激活。虽然可以利用AMOLED的其它变形，但是所有变形通常都要求分开的扫描线和数据线以及将晶体管和透明导体互连。
现在转到图3，提供衬底10，其可以是期望用于具体应用的任意材料，例如塑料、玻璃等。作为优选工艺中的第一步，将栅极金属层12构图到衬底10的表面上，以形成用于TFT的栅极。栅极金属层12的构图需要第一掩模层级。在该工艺的第二步骤中，在栅极金属层12和衬底10的周边表面上沉积栅极电介质层14。由于栅极电介质层14的沉积基本是均厚沉积（blanketdeposition），所以不需要精细掩模层级。注意，虽然为了简化而在图3-6描述的步骤中图示了单个薄膜晶体管（TFT），但是应该理解，在AMLCD或AMOLED中，分别制作了LCD或OLDE的完整阵列。
转到图4，在栅极电介质层14上沉积半导体金属氧化层16。由于半导体金属氧化物层16的沉积基本是均厚沉积，所以不需要精细掩模层级。将沟道保护层18在金属氧化物层16的顶部上构图，并且与栅极12成叠盖关系，以基本限定该薄膜晶体管的沟道，在下文中称为晶体管20。沟道保护层18的形成和定位需要第二掩模层级。
转向图5，在金属氧化物层16上沉积透明氧化物导体的任选层22，并在层16的表面上沉积任选阻挡金属层24。透明氧化物导体层22，例如，可以是ITO等，并且阻挡金属例如可以是Mo、W、Cr、Ni等。在阻挡金属层24上方沉积源极/漏极（S/D）金属层26。层26的S/D金属可以是任意适合的导电金属，诸如铝等。应该理解，层22和24是任选的，并且通常依赖于应用和不同层中使用的材料的具体类型。由于层22、24和26的沉积每个基本上都是均厚沉积，所以不要求精细掩模层级。
然后通过S/D掩模，或第三掩模层级，构图包括层22、24和26（或者存在的具体层）的多层堆叠。在该步骤中，使用蚀刻掩模，并且在栅极12上方蚀刻穿过层22、24和26直到沟道保护层18，并且在别处（标记为30）蚀刻穿过层22、24和26和金属氧化物半导体16。该蚀刻的结果是标记为32的TFT。沟道外部的蚀刻30实现了金属氧化物半导体层16与相邻构件的隔绝。如图1和/或图2的示意图图示的，栅极金属层12一般连接到矩阵的扫描线，并且S/D金属层26连接到矩阵的数据线并且连接到显示元件的另外的构件。
现在转到图6，在TFT32和源极/漏极金属层周边的部分上，构图间隔物或触排层35（第四掩模层级）。任选地，该间隔物或触排层35用作构图或蚀刻掩模，以蚀刻掉标记为37的区域中的不透明的S/D金属26和任选的阻挡金属24，成为光透射（即显示）区。例如，在透明显示器或底部发光/反射显示器中，使用该任选步骤。由任选透明导体层38组成的透明电极，沉积在半导体金属氧化物层16顶部上的区域37中。应该理解，没有任选透明导体层38，半导体金属氧化物层16也可用作透明电极。透明导体层38的一个优点是该材料（例如，TCO等）与半导体金属氧化物层相比通常相对较硬，由此形成了用于列和行驱动电路等连接的良好接触焊垫。
由此，使用三个掩模来构图或制作TFT32，并且在该具体实施例中间隔物构图从滤色器侧转移到TFT侧。该间隔物提供了用于LED填充的固定间隙。间隔物位置的这种转移节省了一个掩模层级。
参考图7-11，图示了用于在AMOLED元件（图2中示意性图示的）中制作两个TFT和它们之间的通孔的工艺。传统上，通过沉积生成了栅极电介质，并通过蚀刻生成了通孔。在本工艺中，栅极金属被阳极化成绝缘金属氧化物，以用作栅极电介质。为了实现这种结构，优选相对容易阳极化的栅极金属，诸如铝（Al）或钽（Ta），产生金属氧化物AlO或TaO。应该注意，很难在阳极化的金属氧化物上形成通孔，因为很难在不蚀刻下面的金属的情况下蚀刻该氧化物。为了解决这种问题，如下所述，在阳极化工艺期间使用构图掩模。
具体参考图7，提供衬底50，其可以是期望用于具体应用的任何材料，例如塑料、玻璃等。作为该优选工艺中的第一步，在衬底50的上表面上沉积栅极金属层52和阻挡金属层54，并且被构图，以便为AMOLED元件中两个TFT中的每一个形成栅极。栅极金属层52和阻挡金属层54的构图需要第一掩模层级。
用于本工艺中的阳极化的栅极金属层52通常是反应性的，以便其容易阳极化。由此，在电场下，其会腐蚀诸如ITO的叠盖的金属氧化物。为了补偿这种问题，提供较低反应性的阻挡金属，诸如Mo、W、Cr或Ni，以防止由于电化学反应造成的腐蚀。该栅极金属用阻挡金属覆盖。
参考图8，在期望形成通孔的位置在阻挡金属层54的表面上形成如光致抗蚀剂等的构图掩模56。在本工艺中，通过光刻限定该栅极图案。利用掩模56，蚀刻阻挡金属层54以移除除通孔之外的层。在该优选工艺中，该蚀刻轻微地底切掩模56。如图9图示，然后轻微回流该构图掩模56，使得不仅覆盖阻挡金属层54的上表面而且覆盖侧边。例如，通过加热、光照或任何可稍微软化构图掩模56的特征，可以实现该回流。如图10图示，使栅极金属层52经受阳极化，以形成阳极化或氧化的栅极金属的层58。如本领域的技术人员所理解的，容易通过使诸如铝或钽的活泼金属经受如蒸汽等的水蒸气（watervapor）而对其进行阳极化。被构图掩模56覆盖的区域没有阳极化，并且通孔54下面没有氧化物。在产生期望量的阳极化之后，停止该工艺，并用任何已知的方式移除构图掩模56，如图11图示。
在该工艺中，通孔表面是不会与叠盖的金属氧化物发生电化学反应的阻挡金属。而且，在阻挡金属上很难形成自然氧化物，并且在不需要任何背面溅射、蚀刻或其它清洗工艺的情况下，通孔接触电阻会大大提高。由此，两个间隔开的栅极通过在该栅极中的一个上限定的通孔而形成。一旦完成了通孔的制作，就可以如上所述进行该工艺。该通孔用于连接该通孔在其上面定位的栅极金属与任意叠盖导体。
由此，公开了一种新的改进的AMLCD和AMOLED的制作工艺，其中减少了掩模层级的数目。而且，公开了在AMOLED中通孔的形成工艺方面的本质提高。通过减少掩模的数目或需要的掩模步骤，基本简化了工艺，并因此降低了成本。具体地，本发明公开了一种在减少了掩模数目的情况下形成触排或间隔物的工艺，和例如通过阳极化栅极绝缘体形成通孔的工艺。该减少掩模的工艺和通孔形成工艺可以用于制作例如连接具有列和行驱动电路的有源显示器的总线和外围区域中的接触焊垫。还可以用本TFT工艺和通孔形成工艺制作集成的扫描驱动器和数据驱动器。由此本发明中公开的工艺可以用于制作具有集成列和行驱动器的显示器背板。
以说明为目的而在这里选择的实施例的各种变化和修改对于本领域的技术人员来说是很容易实现的。对于这些修改和变化没有偏离本发明的精神的情况下，它们都意图于包含在本发明的范围内，本发明的范围仅是由所附权利要求的合理解释来限定的。
已经用这种清楚和简洁的条款全面描述了本发明，使得对于本领域的技术人员能够理解和实践本发明。

Claims (15)

1.一种以减少的掩模操作制作用于有源矩阵显示器的底板中的薄膜晶体管的方法，所述方法包括步骤：
提供具有表面的衬底；
在所述衬底的表面上构图栅极金属，以限定薄膜晶体管栅极；
在所述栅极和周边的衬底表面上方形成栅极电介质的层；
在所述栅极电介质的层上沉积半导体金属氧化物的层；
在叠盖所述栅极的所述半导体金属氧化物上构图沟道保护层，所述沟道保护层被构图以在所述栅极上方的所述半导体金属氧化物中限定沟道区，并暴露剩余的半导体金属氧化物；
在所述沟道保护层和暴露的半导体金属氧化物上，沉积源极/漏极金属层；
在单一的蚀刻步骤中，蚀刻穿过在所述栅极上方的所述源极/漏极金属层直到所述沟道保护层，以将所述源极/漏极金属层分开为薄膜晶体管源极端子和漏极端子，并蚀刻穿过在外围的所述源极/漏极金属层和所述半导体金属氧化物，以隔绝所述薄膜晶体管；和
在隔绝的薄膜晶体管和围绕源极/漏极金属层的部分上构图非导电间隔物/触排层，所述间隔物/触排层限定与所述沟道区相邻的被设计为容纳处于重叠关系的发光器件的光透射区。
2.根据权利要求1所述的方法，进一步包括利用所述间隔物/触排层作为掩模蚀刻所述源极/漏极金属层的步骤，以限定与所述薄膜晶体管相邻的所述光透射区、并暴露所述光透射区中的透明电极。
3.根据权利要求1所述的方法，其中制作所述薄膜晶体管包括制作有源矩阵显示器中的多个薄膜晶体管，所述有源矩阵显示器包括数据线和扫描线的矩阵，所述栅极金属连接到所述扫描线中的一条，并且所述源极/漏极金属连接到所述数据线中的一条。
4.根据权利要求2所述的方法，其中所述光透射区中的所述透明电极是所述有源矩阵显示器中的发光器件的电极。
5.根据权利要求4所述的方法，其中所述发光器件包括液晶发光器件(LCD)和有机发光器件(OLED)中的一种。
6.根据权利要求4所述的方法，其中定位所述间隔物/触排层以使所述衬底和形成在所述衬底上的相关构件与所述有源矩阵显示器中的相邻的衬底成形分开。
7.根据权利要求1所述的方法，其中沉积所述源极/漏极金属层的步骤包括：在沉积所述源极/漏极金属层之前，在所述沟道保护层和所述暴露的半导体金属氧化物上沉积透明氧化物的层。
8.根据权利要求7所述的方法，其中沉积所述源极/漏极金属层的步骤包括在所述透明氧化物的层上沉积阻挡金属层。
9.根据权利要求8所述的方法，其中沉积所述阻挡金属层的步骤包括沉积Mo、W、Cr和Ni中的一种。
10.一种制作有源矩阵显示器中的薄膜晶体管矩阵的方法，所述有源矩阵显示器包括数据线和扫描线的矩阵，所述方法包括步骤：
提供具有表面的透明衬底；
在所述衬底的表面上构图栅极金属，以限定所述矩阵的每个薄膜晶体管的栅极，并且将所述矩阵的每个薄膜晶体管的所述栅极连接到所选择的扫描线；
在所述栅极中的每一个和周边的衬底表面上方形成透明栅极电介质的层；
在所述栅极电介质的层上沉积透明半导体金属氧化物的层；
在叠盖每个栅极的所述半导体金属氧化物上构图沟道保护层，所述沟道保护层被构图以在每个栅极上方的所述半导体金属氧化物中限定沟道区、并暴露剩余的半导体金属氧化物；
在所述沟道保护层和暴露的半导体金属氧化物上，沉积至少源极/漏极金属层；
在单一的蚀刻步骤中，蚀刻穿过在每个栅极上方的所述源极/漏极金属层直到所述沟道保护层，以将所述源极/漏极金属层分开为薄膜晶体管源极端子和漏极端子，并蚀刻穿过在外围的所述源极/漏极金属层和所述半导体金属氧化物，以隔绝所述矩阵的每个薄膜晶体管，并将所述源极/漏极端子中的每一个连接到所述数据线中的一条；
在隔绝的薄膜晶体管和周边的源极/漏极金属层的部分上构图非导电间隔物层，所述间隔物层限定与所述沟道区相邻的被设计为容纳处于重叠关系的发光器件的光透射区；和
使用所述构图的非导电间隔物层作为掩模，蚀刻穿过在所述光透射区中的所述源极/漏极金属层，以暴露作为透明像素端子的所述半导体金属氧化物。
11.根据权利要求10所述的方法，其中所述发光器件包括液晶发光器件(LCD)和有机发光器件(OLED)中的一种。
12.根据权利要求10所述的方法，其中定位所述间隔物层以使所述衬底和形成在所述衬底上的相关构件与所述有源矩阵显示器中的相邻的衬底成形分开。
13.根据权利要求10所述的方法，其中沉积至少源极/漏极金属层的步骤包括：在沉积所述源极/漏极金属层之前，在所述沟道保护层和所述暴露的半导体金属氧化物上沉积透明氧化物的层。
14.根据权利要求13所述的方法，其中沉积至少源极/漏极金属层的步骤包括在所述透明氧化物的层上沉积阻挡金属层。
15.根据权利要求14所述的方法，其中沉积所述阻挡金属层的步骤包括沉积Mo、W、Cr和Ni中的一种。
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