JP2006253684A5 - - Google Patents

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Publication number
JP2006253684A5
JP2006253684A5 JP2006061418A JP2006061418A JP2006253684A5 JP 2006253684 A5 JP2006253684 A5 JP 2006253684A5 JP 2006061418 A JP2006061418 A JP 2006061418A JP 2006061418 A JP2006061418 A JP 2006061418A JP 2006253684 A5 JP2006253684 A5 JP 2006253684A5
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JP
Japan
Prior art keywords
semiconductor region
trench
unitary
array
buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006061418A
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English (en)
Japanese (ja)
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JP2006253684A (ja
JP5137310B2 (ja
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Publication date
Priority claimed from US10/906,808 external-priority patent/US8053823B2/en
Application filed filed Critical
Publication of JP2006253684A publication Critical patent/JP2006253684A/ja
Publication of JP2006253684A5 publication Critical patent/JP2006253684A5/ja
Application granted granted Critical
Publication of JP5137310B2 publication Critical patent/JP5137310B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006061418A 2005-03-08 2006-03-07 トレンチ・キャパシタ・アレイを含む構造およびその形成方法（ｓｏｉチップ用の簡略化した埋込プレート構造およびプロセス） Expired - Fee Related JP5137310B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/906,808 US8053823B2 (en) 2005-03-08 2005-03-08 Simplified buried plate structure and process for semiconductor-on-insulator chip
US10/906808 2005-03-08

Publications (3)

Publication Number Publication Date
JP2006253684A JP2006253684A (ja) 2006-09-21
JP2006253684A5 true JP2006253684A5 (https=) 2008-12-04
JP5137310B2 JP5137310B2 (ja) 2013-02-06

Family

ID=36969918

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006061418A Expired - Fee Related JP5137310B2 (ja) 2005-03-08 2006-03-07 トレンチ・キャパシタ・アレイを含む構造およびその形成方法（ｓｏｉチップ用の簡略化した埋込プレート構造およびプロセス）

Country Status (4)

Country Link
US (1) US8053823B2 (https=)
JP (1) JP5137310B2 (https=)
CN (1) CN1832183A (https=)
TW (1) TW200711149A (https=)

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* Cited by examiner, † Cited by third party
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US20070045697A1 (en) * 2005-08-31 2007-03-01 International Business Machines Corporation Body-contacted semiconductor structures and methods of fabricating such body-contacted semiconductor structures
US20070045698A1 (en) * 2005-08-31 2007-03-01 International Business Machines Corporation Semiconductor structures with body contacts and fabrication methods thereof
US7626257B2 (en) * 2006-01-18 2009-12-01 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
US7595262B2 (en) * 2006-10-27 2009-09-29 Qimonda Ag Manufacturing method for an integrated semiconductor structure
US7564096B2 (en) 2007-02-09 2009-07-21 Fairchild Semiconductor Corporation Scalable power field effect transistor with improved heavy body structure and method of manufacture
US7808028B2 (en) * 2007-04-18 2010-10-05 International Business Machines Corporation Trench structure and method of forming trench structure
US7713814B2 (en) * 2008-01-04 2010-05-11 International Business Machines Corporation Hybrid orientation substrate compatible deep trench capacitor embedded DRAM
US7888723B2 (en) * 2008-01-18 2011-02-15 International Business Machines Corporation Deep trench capacitor in a SOI substrate having a laterally protruding buried strap
US7384842B1 (en) * 2008-02-14 2008-06-10 International Business Machines Corporation Methods involving silicon-on-insulator trench memory with implanted plate
US7910451B2 (en) * 2008-04-04 2011-03-22 International Business Machines Corporation Simultaneous buried strap and buried contact via formation for SOI deep trench capacitor
US9059319B2 (en) * 2010-01-25 2015-06-16 International Business Machines Corporation Embedded dynamic random access memory device and method
US8298908B2 (en) * 2010-02-11 2012-10-30 International Business Machines Corporation Structure and method for forming isolation and buried plate for trench capacitor
US8354675B2 (en) * 2010-05-07 2013-01-15 International Business Machines Corporation Enhanced capacitance deep trench capacitor for EDRAM
US8652925B2 (en) * 2010-07-19 2014-02-18 International Business Machines Corporation Method of fabricating isolated capacitors and structure thereof
US8232163B2 (en) 2010-11-01 2012-07-31 International Business Machines Corporation Lateral epitaxial grown SOI in deep trench structures and methods of manufacture
US8647945B2 (en) * 2010-12-03 2014-02-11 International Business Machines Corporation Method of forming substrate contact for semiconductor on insulator (SOI) substrate
TWI415264B (zh) * 2011-02-17 2013-11-11 Anpec Electronics Corp Dyed transistor with thick underlying dielectric layer and method for making the same
EP2498280B1 (en) * 2011-03-11 2020-04-29 Soitec DRAM with trench capacitors and logic back-biased transistors integrated on an SOI substrate comprising an intrinsic semiconductor layer and manufacturing method thereof
WO2012129522A2 (en) 2011-03-24 2012-09-27 Dirtt Environmental Solutions Inc. Modular walls with incorporated planters
US9142508B2 (en) 2011-06-27 2015-09-22 Tessera, Inc. Single exposure in multi-damascene process
US20130043559A1 (en) * 2011-08-17 2013-02-21 International Business Machines Corporation Trench formation in substrate
US8586444B2 (en) * 2012-03-23 2013-11-19 International Business Machines Corporation Creating deep trenches on underlying substrate
US8557657B1 (en) * 2012-05-18 2013-10-15 International Business Machines Corporation Retrograde substrate for deep trench capacitors
TW201403782A (zh) 2012-07-04 2014-01-16 財團法人工業技術研究院 基底穿孔的製造方法、矽穿孔結構及其電容控制方法
US8927989B2 (en) * 2012-11-28 2015-01-06 International Business Machines Corporation Voltage contrast inspection of deep trench isolation
US9412640B2 (en) 2013-01-25 2016-08-09 GlobalFoundries, Inc. Semiconductor device including substrate contact and related method
US9252242B2 (en) * 2013-03-25 2016-02-02 International Business Machines Corporation Semiconductor structure with deep trench thermal conduction
CN103456620B (zh) * 2013-09-11 2016-03-02 中微半导体设备(上海)有限公司 半导体结构的形成方法
ITUA20162174A1 (it) * 2016-03-31 2017-10-01 St Microelectronics Srl Procedimento di fabbricazione di un sensore di pressione mems e relativo sensore di pressione mems
US11121207B2 (en) * 2016-11-10 2021-09-14 Texas Instruments Incorporated Integrated trench capacitor with top plate having reduced voids
US10043824B2 (en) 2016-12-15 2018-08-07 Vanguard International Semiconductor Corporation Semiconductor device including a vacuum gap and method for manufacturing the same
US10879106B2 (en) * 2018-02-21 2020-12-29 Texas Instruments Incorporated Apparatus with overlapping deep trench and shallow trench and method of fabricating the same with low defect density
EP3828932B1 (en) * 2019-11-29 2022-09-07 Infineon Technologies Dresden GmbH & Co . KG Method for manufacturing a sensor device with a buried deep trench structure and sensor device
CN113497006B (zh) * 2020-03-20 2024-12-13 中芯国际集成电路制造(北京)有限公司 电容结构及其形成方法
US11545543B2 (en) * 2020-10-27 2023-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Trench pattern for trench capacitor yield improvement
US12015051B2 (en) 2021-09-30 2024-06-18 Macom Technology Solutions Holdings, Inc. Semiconductor device and method of forming monolithic surge protection resistor
CN116544283B (zh) * 2023-04-28 2024-06-14 上海朗矽科技有限公司 嵌入式电容器及嵌入式电容器的制作方法

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JPH0563155A (ja) * 1991-08-30 1993-03-12 Texas Instr Japan Ltd 半導体装置及びその製造方法
JP3439493B2 (ja) * 1992-12-01 2003-08-25 沖電気工業株式会社 半導体記憶装置の製造方法
JP3301170B2 (ja) * 1993-08-09 2002-07-15 ソニー株式会社 半導体装置の製法
JPH08274276A (ja) * 1995-03-31 1996-10-18 Toshiba Corp 半導体装置およびその製造方法
US6387772B1 (en) 2000-04-25 2002-05-14 Agere Systems Guardian Corp. Method for forming trench capacitors in SOI substrates
JP2003007856A (ja) 2001-06-26 2003-01-10 Toshiba Corp 半導体装置及びその製造方法
US6870210B2 (en) * 2002-08-22 2005-03-22 Micron Technology, Inc. Dual-sided capacitor
DE10257873B3 (de) 2002-12-11 2004-06-17 Infineon Technologies Ag Dynamische Speicherzelle und Verfahren zur Herstellung derselben
US6964897B2 (en) * 2003-06-09 2005-11-15 International Business Machines Corporation SOI trench capacitor cell incorporating a low-leakage floating body array transistor
US7091081B2 (en) * 2004-05-21 2006-08-15 International Business Machines Corporation Method for patterning a semiconductor region

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