JP2006245280A - 電界効果トランジスタ及びその動作方法 - Google Patents

電界効果トランジスタ及びその動作方法 Download PDF

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Publication number
JP2006245280A
JP2006245280A JP2005058797A JP2005058797A JP2006245280A JP 2006245280 A JP2006245280 A JP 2006245280A JP 2005058797 A JP2005058797 A JP 2005058797A JP 2005058797 A JP2005058797 A JP 2005058797A JP 2006245280 A JP2006245280 A JP 2006245280A
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JP
Japan
Prior art keywords
insulating film
effect transistor
field effect
film
voltage
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Pending
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JP2005058797A
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English (en)
Japanese (ja)
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JP2006245280A5 (enExample
Inventor
Kazunori Isogai
和範 磯貝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2005058797A priority Critical patent/JP2006245280A/ja
Priority to US11/366,822 priority patent/US7592659B2/en
Publication of JP2006245280A publication Critical patent/JP2006245280A/ja
Publication of JP2006245280A5 publication Critical patent/JP2006245280A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H10D84/217—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors of only conductor-insulator-semiconductor capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs

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  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Non-Volatile Memory (AREA)
JP2005058797A 2005-03-03 2005-03-03 電界効果トランジスタ及びその動作方法 Pending JP2006245280A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005058797A JP2006245280A (ja) 2005-03-03 2005-03-03 電界効果トランジスタ及びその動作方法
US11/366,822 US7592659B2 (en) 2005-03-03 2006-03-03 Field effect transistor and an operation method of the field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005058797A JP2006245280A (ja) 2005-03-03 2005-03-03 電界効果トランジスタ及びその動作方法

Publications (2)

Publication Number Publication Date
JP2006245280A true JP2006245280A (ja) 2006-09-14
JP2006245280A5 JP2006245280A5 (enExample) 2009-12-10

Family

ID=37051378

Family Applications (1)

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JP2005058797A Pending JP2006245280A (ja) 2005-03-03 2005-03-03 電界効果トランジスタ及びその動作方法

Country Status (2)

Country Link
US (1) US7592659B2 (enExample)
JP (1) JP2006245280A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008124452A (ja) * 2006-10-27 2008-05-29 Qimonda Ag 修正可能なゲートスタックメモリ素子
US8379431B2 (en) 2010-03-24 2013-02-19 Kabushiki Kaisha Toshiba Semiconductor memory device and writing method thereof
JP2013520012A (ja) * 2010-02-15 2013-05-30 マイクロン テクノロジー， インク． メムキャパシタ・デバイス、電解効果トランジスタ・デバイス、不揮発性メモリ・アレイ、および、プログラミング方法
US9275728B2 (en) 2010-08-12 2016-03-01 Micron Technology, Inc. Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and writing from a memory cell, and methods of programming a memory cell
US9830970B2 (en) 2010-02-15 2017-11-28 Micron Technology, Inc. Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8564039B2 (en) 2010-04-07 2013-10-22 Micron Technology, Inc. Semiconductor devices including gate structures comprising colossal magnetocapacitive materials
TWI466271B (zh) * 2010-07-05 2014-12-21 Macronix Int Co Ltd 具有可調整閘極電阻值之電晶體及具有可調整閘極電阻值之電晶體之半導體元件
US8675381B2 (en) * 2010-07-20 2014-03-18 Macronix International Co., Ltd. Transistor having an adjustable gate resistance and semiconductor device comprising the same
KR102074942B1 (ko) * 2013-07-29 2020-02-10 삼성전자 주식회사 비휘발성 메모리 트랜지스터 및 이를 포함하는 소자
CN105981116B (zh) 2013-10-01 2019-09-06 埃1023公司 磁增强的能量存储系统及方法
US11856801B2 (en) 2020-06-16 2023-12-26 Taiwan Semiconductor Manufacturing Company Limited Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49131646A (enExample) * 1973-04-20 1974-12-17
JPH07297302A (ja) * 1994-04-28 1995-11-10 Oki Electric Ind Co Ltd メモリセルトランジスタ
JPH09213819A (ja) * 1996-01-29 1997-08-15 Oki Electric Ind Co Ltd 強誘電体ゲートメモリ、これに用いる強誘電体薄膜の形成方法およびこの形成方法に用いる前駆体溶液
JP2003132673A (ja) * 2001-10-25 2003-05-09 Toshiba Corp 強誘電体半導体メモリ
JP2004022944A (ja) * 2002-06-19 2004-01-22 National Institute Of Advanced Industrial & Technology 強誘電体不揮発性記憶装置及びその駆動方法
JP2008512857A (ja) * 2004-09-03 2008-04-24 ユニティ・セミコンダクター・コーポレーション 混合原子価導電性酸化物を用いたメモリ

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6864529B2 (en) * 2001-08-23 2005-03-08 Hewlett-Packard Development Company, L.P. Thin film transistor memory device
JP4248187B2 (ja) * 2002-03-27 2009-04-02 シャープ株式会社 集積回路装置及びニューロ素子
US7154140B2 (en) * 2002-06-21 2006-12-26 Micron Technology, Inc. Write once read only memory with large work function floating gates
US6825517B2 (en) * 2002-08-28 2004-11-30 Cova Technologies, Inc. Ferroelectric transistor with enhanced data retention
US6762481B2 (en) * 2002-10-08 2004-07-13 The University Of Houston System Electrically programmable nonvolatile variable capacitor
JP2005167064A (ja) * 2003-12-04 2005-06-23 Sharp Corp 不揮発性半導体記憶装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49131646A (enExample) * 1973-04-20 1974-12-17
JPH07297302A (ja) * 1994-04-28 1995-11-10 Oki Electric Ind Co Ltd メモリセルトランジスタ
JPH09213819A (ja) * 1996-01-29 1997-08-15 Oki Electric Ind Co Ltd 強誘電体ゲートメモリ、これに用いる強誘電体薄膜の形成方法およびこの形成方法に用いる前駆体溶液
JP2003132673A (ja) * 2001-10-25 2003-05-09 Toshiba Corp 強誘電体半導体メモリ
JP2004022944A (ja) * 2002-06-19 2004-01-22 National Institute Of Advanced Industrial & Technology 強誘電体不揮発性記憶装置及びその駆動方法
JP2008512857A (ja) * 2004-09-03 2008-04-24 ユニティ・セミコンダクター・コーポレーション 混合原子価導電性酸化物を用いたメモリ

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008124452A (ja) * 2006-10-27 2008-05-29 Qimonda Ag 修正可能なゲートスタックメモリ素子
JP2013520012A (ja) * 2010-02-15 2013-05-30 マイクロン テクノロジー， インク． メムキャパシタ・デバイス、電解効果トランジスタ・デバイス、不揮発性メモリ・アレイ、および、プログラミング方法
US8867261B2 (en) 2010-02-15 2014-10-21 Micron Technology, Inc. Memcapacitor devices, field effect transistor devices, and, non-volatile memory arrays
KR101474088B1 (ko) * 2010-02-15 2014-12-17 마이크론 테크놀로지, 인크 Ｍｅｍ 커패시터 디바이스, 전계 효과 트랜지스터 디바이스, 비휘발성 메모리 어레이, 및 프로그래밍 방법
US9830970B2 (en) 2010-02-15 2017-11-28 Micron Technology, Inc. Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems
US10360967B2 (en) 2010-02-15 2019-07-23 Micron Technology, Inc. Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems
US10796744B2 (en) 2010-02-15 2020-10-06 Micron Technology, Inc. Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems
US8379431B2 (en) 2010-03-24 2013-02-19 Kabushiki Kaisha Toshiba Semiconductor memory device and writing method thereof
US9275728B2 (en) 2010-08-12 2016-03-01 Micron Technology, Inc. Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and writing from a memory cell, and methods of programming a memory cell

Also Published As

Publication number Publication date
US7592659B2 (en) 2009-09-22
US20060223251A1 (en) 2006-10-05

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