JP2006245165A - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
JP2006245165A
JP2006245165A JP2005056964A JP2005056964A JP2006245165A JP 2006245165 A JP2006245165 A JP 2006245165A JP 2005056964 A JP2005056964 A JP 2005056964A JP 2005056964 A JP2005056964 A JP 2005056964A JP 2006245165 A JP2006245165 A JP 2006245165A
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JP
Japan
Prior art keywords
layer
composition
side intermediate
intermediate layer
active layer
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Pending
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JP2005056964A
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English (en)
Japanese (ja)
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JP2006245165A5 (enrdf_load_stackoverflow
Inventor
Akira Omae
暁 大前
Muneyuki Kazetagawa
統之 風田川
Harunori Shiomi
治典 塩見
Nobukata Okano
展賢 岡野
Sukeyuki Arimochi
祐之 有持
Takaaki Ami
隆明 網
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Sony Corp
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Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2005056964A priority Critical patent/JP2006245165A/ja
Publication of JP2006245165A publication Critical patent/JP2006245165A/ja
Publication of JP2006245165A5 publication Critical patent/JP2006245165A5/ja
Pending legal-status Critical Current

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JP2005056964A 2005-03-02 2005-03-02 半導体発光素子 Pending JP2006245165A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005056964A JP2006245165A (ja) 2005-03-02 2005-03-02 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005056964A JP2006245165A (ja) 2005-03-02 2005-03-02 半導体発光素子

Publications (2)

Publication Number Publication Date
JP2006245165A true JP2006245165A (ja) 2006-09-14
JP2006245165A5 JP2006245165A5 (enrdf_load_stackoverflow) 2007-09-20

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ID=37051291

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JP2005056964A Pending JP2006245165A (ja) 2005-03-02 2005-03-02 半導体発光素子

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JP (1) JP2006245165A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012060172A (ja) * 2011-12-19 2012-03-22 Toshiba Corp 半導体発光素子
JP2013016873A (ja) * 2012-10-25 2013-01-24 Toshiba Corp 半導体発光素子
US8525203B2 (en) 2010-02-16 2013-09-03 Kabushiki Kaisha Toshiba Semiconductor light emitting device
KR101344181B1 (ko) 2008-01-30 2013-12-20 엘지전자 주식회사 질화물 반도체 소자 및 그의 제조 방법
JP2014033232A (ja) * 2013-11-18 2014-02-20 Toshiba Corp 半導体発光素子
US9093588B2 (en) 2010-07-08 2015-07-28 Kabushiki Kaisha Toshiba Semiconductor light emitting device with an aluminum containing layer formed thereon
US9437775B2 (en) 2013-06-18 2016-09-06 Meijo University Nitride semiconductor light-emitting device
JP2021082687A (ja) * 2019-11-18 2021-05-27 シャープ福山セミコンダクター株式会社 画像表示素子及び画像表示素子の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004087762A (ja) * 2002-08-27 2004-03-18 Sony Corp 窒化物系半導体発光素子

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004087762A (ja) * 2002-08-27 2004-03-18 Sony Corp 窒化物系半導体発光素子

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101344181B1 (ko) 2008-01-30 2013-12-20 엘지전자 주식회사 질화물 반도체 소자 및 그의 제조 방법
US8525203B2 (en) 2010-02-16 2013-09-03 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US8648381B2 (en) 2010-02-16 2014-02-11 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US8901595B2 (en) 2010-02-16 2014-12-02 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US9093588B2 (en) 2010-07-08 2015-07-28 Kabushiki Kaisha Toshiba Semiconductor light emitting device with an aluminum containing layer formed thereon
JP2012060172A (ja) * 2011-12-19 2012-03-22 Toshiba Corp 半導体発光素子
JP2013016873A (ja) * 2012-10-25 2013-01-24 Toshiba Corp 半導体発光素子
US9437775B2 (en) 2013-06-18 2016-09-06 Meijo University Nitride semiconductor light-emitting device
JP2014033232A (ja) * 2013-11-18 2014-02-20 Toshiba Corp 半導体発光素子
JP2021082687A (ja) * 2019-11-18 2021-05-27 シャープ福山セミコンダクター株式会社 画像表示素子及び画像表示素子の製造方法
US11908847B2 (en) 2019-11-18 2024-02-20 Sharp Fukuyama Laser Co., Ltd. Image display element and method for manufacturing image display element
JP7492328B2 (ja) 2019-11-18 2024-05-29 シャープ福山レーザー株式会社 画像表示素子及び画像表示素子の製造方法

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