JP2006245165A5 - - Google Patents

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Publication number
JP2006245165A5
JP2006245165A5 JP2005056964A JP2005056964A JP2006245165A5 JP 2006245165 A5 JP2006245165 A5 JP 2006245165A5 JP 2005056964 A JP2005056964 A JP 2005056964A JP 2005056964 A JP2005056964 A JP 2005056964A JP 2006245165 A5 JP2006245165 A5 JP 2006245165A5
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JP
Japan
Prior art keywords
layer
iii
semiconductor light
compound semiconductor
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005056964A
Other languages
English (en)
Japanese (ja)
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JP2006245165A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005056964A priority Critical patent/JP2006245165A/ja
Priority claimed from JP2005056964A external-priority patent/JP2006245165A/ja
Publication of JP2006245165A publication Critical patent/JP2006245165A/ja
Publication of JP2006245165A5 publication Critical patent/JP2006245165A5/ja
Pending legal-status Critical Current

Links

JP2005056964A 2005-03-02 2005-03-02 半導体発光素子 Pending JP2006245165A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005056964A JP2006245165A (ja) 2005-03-02 2005-03-02 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005056964A JP2006245165A (ja) 2005-03-02 2005-03-02 半導体発光素子

Publications (2)

Publication Number Publication Date
JP2006245165A JP2006245165A (ja) 2006-09-14
JP2006245165A5 true JP2006245165A5 (enrdf_load_stackoverflow) 2007-09-20

Family

ID=37051291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005056964A Pending JP2006245165A (ja) 2005-03-02 2005-03-02 半導体発光素子

Country Status (1)

Country Link
JP (1) JP2006245165A (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101344181B1 (ko) 2008-01-30 2013-12-20 엘지전자 주식회사 질화물 반도체 소자 및 그의 제조 방법
JP4892618B2 (ja) 2010-02-16 2012-03-07 株式会社東芝 半導体発光素子
JP5325171B2 (ja) 2010-07-08 2013-10-23 株式会社東芝 半導体発光素子
JP5337862B2 (ja) * 2011-12-19 2013-11-06 株式会社東芝 半導体発光素子
JP5554387B2 (ja) * 2012-10-25 2014-07-23 株式会社東芝 半導体発光素子
JP6192378B2 (ja) 2013-06-18 2017-09-06 学校法人 名城大学 窒化物半導体発光素子
JP5764184B2 (ja) * 2013-11-18 2015-08-12 株式会社東芝 半導体発光素子
JP7492328B2 (ja) 2019-11-18 2024-05-29 シャープ福山レーザー株式会社 画像表示素子及び画像表示素子の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004087762A (ja) * 2002-08-27 2004-03-18 Sony Corp 窒化物系半導体発光素子

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