JP2006241522A5 - - Google Patents

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Publication number
JP2006241522A5
JP2006241522A5 JP2005059083A JP2005059083A JP2006241522A5 JP 2006241522 A5 JP2006241522 A5 JP 2006241522A5 JP 2005059083 A JP2005059083 A JP 2005059083A JP 2005059083 A JP2005059083 A JP 2005059083A JP 2006241522 A5 JP2006241522 A5 JP 2006241522A5
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JP
Japan
Prior art keywords
target
application device
voltage application
voltage
substrate holder
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JP2005059083A
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English (en)
Japanese (ja)
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JP4931171B2 (ja
JP2006241522A (ja
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Application filed filed Critical
Priority claimed from JP2005059083A external-priority patent/JP4931171B2/ja
Priority to JP2005059083A priority Critical patent/JP4931171B2/ja
Priority to TW095106846A priority patent/TWI408736B/zh
Priority to CN200680001460XA priority patent/CN101091002B/zh
Priority to US11/885,399 priority patent/US8158198B2/en
Priority to PCT/JP2006/304070 priority patent/WO2006093260A1/ja
Priority to KR1020077012366A priority patent/KR100942684B1/ko
Publication of JP2006241522A publication Critical patent/JP2006241522A/ja
Publication of JP2006241522A5 publication Critical patent/JP2006241522A5/ja
Publication of JP4931171B2 publication Critical patent/JP4931171B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005059083A 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法 Expired - Fee Related JP4931171B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2005059083A JP4931171B2 (ja) 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法
TW095106846A TWI408736B (zh) 2005-03-03 2006-03-01 Method for forming tantalum nitride film
PCT/JP2006/304070 WO2006093260A1 (ja) 2005-03-03 2006-03-03 タンタル窒化物膜の形成方法
US11/885,399 US8158198B2 (en) 2005-03-03 2006-03-03 Method for forming tantalum nitride film
CN200680001460XA CN101091002B (zh) 2005-03-03 2006-03-03 钽氮化物膜的形成方法
KR1020077012366A KR100942684B1 (ko) 2005-03-03 2006-03-03 탄탈 질화물막의 형성 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005059083A JP4931171B2 (ja) 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法

Publications (3)

Publication Number Publication Date
JP2006241522A JP2006241522A (ja) 2006-09-14
JP2006241522A5 true JP2006241522A5 (enExample) 2008-04-24
JP4931171B2 JP4931171B2 (ja) 2012-05-16

Family

ID=36941290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005059083A Expired - Fee Related JP4931171B2 (ja) 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法

Country Status (6)

Country Link
US (1) US8158198B2 (enExample)
JP (1) JP4931171B2 (enExample)
KR (1) KR100942684B1 (enExample)
CN (1) CN101091002B (enExample)
TW (1) TWI408736B (enExample)
WO (1) WO2006093260A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7598170B2 (en) 2007-01-26 2009-10-06 Asm America, Inc. Plasma-enhanced ALD of tantalum nitride films
US7595270B2 (en) 2007-01-26 2009-09-29 Asm America, Inc. Passivated stoichiometric metal nitride films
JP5551681B2 (ja) 2008-04-16 2014-07-16 エーエスエム アメリカ インコーポレイテッド アルミニウム炭化水素化合物を使用する金属炭化物膜の原子層堆積
JP5233562B2 (ja) * 2008-10-04 2013-07-10 東京エレクトロン株式会社 成膜方法及び成膜装置
KR102216575B1 (ko) 2014-10-23 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 티타늄 알루미늄 및 탄탈륨 알루미늄 박막들
KR101651352B1 (ko) * 2015-03-12 2016-08-30 한양대학교 에리카산학협력단 증착장비

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5970378A (en) * 1996-09-03 1999-10-19 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-step plasma treatment process for forming low resistance titanium nitride layer
KR100200739B1 (ko) * 1996-10-16 1999-06-15 윤종용 장벽금속막 형성방법
JP4097747B2 (ja) 1997-08-07 2008-06-11 株式会社アルバック バリア膜形成方法
US6297147B1 (en) * 1998-06-05 2001-10-02 Applied Materials, Inc. Plasma treatment for ex-situ contact fill
US6455421B1 (en) * 2000-07-31 2002-09-24 Applied Materials, Inc. Plasma treatment of tantalum nitride compound films formed by chemical vapor deposition
US7098131B2 (en) * 2001-07-19 2006-08-29 Samsung Electronics Co., Ltd. Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
US7049226B2 (en) * 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US20030091739A1 (en) * 2001-11-14 2003-05-15 Hitoshi Sakamoto Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus
JP4007044B2 (ja) 2002-04-19 2007-11-14 ソニー株式会社 原子層蒸着法を用いた薄膜形成方法
US6716744B2 (en) 2002-05-06 2004-04-06 Sharp Laboratories Of America, Inc. Ultra thin tungsten metal films used as adhesion promoter between barrier metals and copper
JP2003342732A (ja) * 2002-05-20 2003-12-03 Mitsubishi Materials Corp タンタル錯体を含む有機金属化学蒸着法用溶液原料及びそれを用いて作製されたタンタル含有薄膜
JP2005203569A (ja) * 2004-01-15 2005-07-28 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法及び半導体装置

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