WO2006093260A1 - タンタル窒化物膜の形成方法 - Google Patents
タンタル窒化物膜の形成方法 Download PDFInfo
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- WO2006093260A1 WO2006093260A1 PCT/JP2006/304070 JP2006304070W WO2006093260A1 WO 2006093260 A1 WO2006093260 A1 WO 2006093260A1 JP 2006304070 W JP2006304070 W JP 2006304070W WO 2006093260 A1 WO2006093260 A1 WO 2006093260A1
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- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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Definitions
- the present invention relates to a method for forming a tantalum nitride film, and more particularly, to a method for forming a tantalum nitride film useful as a barrier film for a wiring film according to an ALD method (Atomic Layer Deposition). .
- ALD method Atomic Layer Deposition
- a barrier film having a desired thickness has been formed by using the ALD method in which metal nitride thin films are stacked in units of layers (see, for example, Patent Document 1).
- a barrier film is formed by depositing a material layer of Ta, TiN, TaN or the like using an ALD method or the like. It is also known to be achieved (see, for example, Patent Document 2).
- the ALD method is similar to the CVD method in that it uses a chemical reaction between precursors.
- the ordinary CVD method uses the phenomenon in which the precursors in the gas state come into contact with each other and the reaction occurs, whereas the ALD method differs in that it uses the surface reaction between the two precursors. That is, according to the ALD method, two precursors are supplied by supplying another precursor (for example, a reactive gas) in a state where one kind of precursor (for example, a source gas) is adsorbed on the substrate surface. React with each other on the substrate surface to form a desired metal film. In this case, the reaction between the first adsorbed precursor on the substrate surface and the next supplied precursor occurs at a very fast rate on the substrate surface.
- the precursor can be used in a solid, liquid, or gaseous state, and the source gas is placed on a carrier gas such as N or Ar.
- the ALD method is a method in which a raw material gas adsorption process and a reaction process of adsorbed raw material gas and reactive gas are alternately repeated to form a thin film in units of atomic layers. Since it is always performed in the surface motion region, it has a very good step force leverage, and since the source gas and the reaction gas are separately supplied and reacted, the film density can be increased. Attention has been paid.
- the gas introducing means is arranged on the ceiling of the film forming apparatus so as to face the substrate stage.
- a predetermined raw material gas and a reactive gas are introduced into the apparatus with a time lag through a gas introduction means, and a reaction of reacting with a reactive gas while assisting with a raw material gas and a plasma.
- Patent Document 3 An apparatus configured to repeat a process and obtain a thin film having a predetermined thickness.
- Patent Document 1 Japanese Patent Laid-Open No. 11-54459 (Claim 1 etc.)
- Patent Document 2 JP 2004-6856 (Claims)
- Patent Document 3 Japanese Patent Laid-Open No. 2003-318174 (Claims)
- a tantalum-containing organometallic compound gas is used as a raw material gas
- the C and N contents in the obtained tantalum nitride film are high, and the Ta / N composition ratio is low. Therefore, it is difficult to form a low-resistance tantalum nitride (TaN) film useful as a barrier film while ensuring adhesion with a Cu wiring film.
- organic groups such as alkyl groups in the source gas are cut and removed to reduce the C content, and the bond between Ta and N is cut to increase the TaZN composition ratio. It is necessary to develop a film formation process that can be used.
- an object of the present invention is to solve the above-described problems of the prior art, in which the C / N content is low, the Ta / N composition ratio is high, and a wiring film (for example, Cu wiring) It is an object of the present invention to provide a method for forming a low-resistance tantalum nitride film useful as a barrier film in which adhesion to the film is ensured.
- N (R, R ′) (R and R ′ are the number of carbon atoms:!
- R and R ′ are the number of carbon atoms:!
- a source gas composed of a coordination compound coordinated with each other (which may be the same group or different groups) and a halogen gas, and TaN (Hal) (R, R ') Compound (where Hal is
- the tantalum-rich tantalum nitride film is formed by cutting off and removing the remaining R (R ′) group bonded to N.
- the source gas when introducing the source gas and the halogen gas, the source gas is first introduced into the vacuum chamber and adsorbed on the substrate, and then the halogen gas is introduced. Even if it reacts with the adsorbed source gas to form a surface adsorption film of one atomic layer or several atomic layers made of TaN (Hal) (R, R ') compound, or both gases are introduced simultaneously.
- the reaction may be performed on the substrate to form a monoatomic layer or multi-atomic layer surface adsorption film made of a TaN (Hal) (R, R ′) compound.
- a thin film having a desired film thickness can be formed by alternately repeating the adsorption process and the reaction process a plurality of times.
- the C and N contents in the obtained film are reduced, and the Ta / N composition ratio is increased.
- the source gas is pentadimethylamino tantalum (PDMAT), tert-amylimidotris (dimethylamide) tantalum (TAIMATA), pentajetylaminotantalum (PEMAT), tert-butylimidotris (dimethylamide) ) Tantanole (TBTDET), tert-butylimidotris (ethylmethylamido) tantalum (TBTEMT), Ta (N (CH)) (NCH CH) (DEMAT),
- TaX a halogen atom selected from chlorine, bromine and iodine
- Desirable to be a kind of coordination compound gas is a kind of coordination compound gas.
- the halogen gas power is preferably at least one gas selected from fluorine, chlorine, bromine and iodine. If such a halogen gas is used, the TaN (Hal) (R, R ′) compound can be produced.
- the H atom-containing gas is at least one gas selected from H, NH, SiH force.
- a tantalum-rich low-resistance thin film in which the composition ratio of tantalum and nitrogen in the film satisfies Ta / N ⁇ 2.0 is obtained.
- the method for forming a tantalum nitride film of the present invention also includes forming a tantalum nitride film by the above-described formation method, and then adding a target containing tantalum as a main component in the obtained tantalum nitride film. Tantalum particles are made incident by sputtering used. As a result, a tantalum-rich tantalum nitride film sufficiently satisfying Ta / N ⁇ 2.0 can be formed.
- tantalum particles may be incident on the obtained tantalum nitride film by sputtering using a target containing tantalum as a main constituent.
- the adsorption step and the reaction step, and the step of allowing tantalum particles to enter the resultant tantalum nitride film by sputtering using a target containing tantalum as a main component are alternately repeated a plurality of times. Also good. By repeating the sputtering process, the adhesion of the resulting barrier film is improved and impurities such as carbon can be removed. Further, during the adsorption step and the reaction step, tantalum particles are incident by sputtering using a target containing tantalum as a main constituent. You can carry out the process.
- the sputtering power DC power and RF power are adjusted so that the DC power is low and the RF power is high.
- the present invention it is useful as a barrier film having a low C and N content, a high level, and a TaZN composition ratio, and ensuring adhesion with a wiring film (eg, a Cu wiring film). It is possible to form a tantalum nitride film having a low resistance.
- a low resistance tantalum nitride film having a low C, N content and a high Ta / N composition ratio comprises a source gas composed of the tantalum-containing coordination compound in a vacuum chamber and a halogen.
- TaN (Hal) (R, R ') compound is formed on the substrate by reaction with gas.
- radicals such as H radicals and NH radicals derived from NH gas.
- the source gas, halogen gas and H atom-containing gas may be introduced as they are or may be introduced together with an inert gas such as N gas or Ar. Regarding the amount of these reactants
- the halogen gas is used with respect to the source gas, for example, at a flow rate of 5 sccm or less with respect to the source gas of 5 sccm, and the H atom-containing compound gas is larger than the halogen gas with respect to the source gas, for example, , 100 to 1000 sccm (H conversion) flow rate for 5 sccm of raw material gas
- the temperature of the above two reactions may be any temperature at which the reaction takes place.
- it in the reaction between the source gas and the halogen gas, it is generally 300 ° C or lower, preferably 150 to 300 ° C.
- the reaction of the corresponding halogenated product with a radical it is generally 300 ° C or lower, preferably 150 to 300 ° C.
- the pressure in the vacuum chamber is preferably 1 to 10 Pa for the first halogenation reaction and 1 to OOPa for the next film formation reaction.
- the coordination compound, N (R, R ') (R and R' around the tantalum element (Ta) represents an alkyl group having! -6 carbon atoms, Even if each is the same group, different groups But that's what they coordinated.
- This alkyl group is, for example, a methyl, ethyl, propyl, butyl, pentyl or hexyl group, which may be linear or branched.
- This coordination compound is usually a compound in which 4 to 5 N— (R, R ′) are coordinated around Ta.
- a halogen reaction is performed by introducing a halogen gas, and TaN (Hal) (R, R ')
- the compound xyz is formed, and the H radical generated from the hydrogen atom-containing compound is introduced in the next step to form a tantalum nitride film, and then this process may be repeated as many times as desired.
- H radicals may be introduced to form a tantalum nitride film, and then this process may be repeated the desired number of times, or a source gas and a halogen gas may be introduced simultaneously.
- radicals may be introduced to form a tantalum nitride film, and then this process may be repeated as many times as desired.
- the tantalum nitride forming method of the present invention can be carried out without any limitation as long as it is a film forming apparatus capable of performing a so-called ALD method.
- a film forming apparatus for forming a thin film on a substrate in a vacuum chamber a source gas introduction system for introducing a source gas containing tantalum, which is a constituent element of the thin film, and a halogen gas Halogen gas introduction system to introduce
- reaction gas introduction system that introduces a reaction gas may be used. Further, a film forming apparatus such as that shown in FIG. 4 can be used.
- the above-mentioned reaction gas introduction system is preferably equipped with a radical generation device for generating reaction gas radicals, and the so-called plasma method or catalyst method may be used.
- the film forming apparatus is connected to at least the degassing chamber and the wiring film forming chamber through a transfer chamber that can be evacuated, and the substrate is removed from the transfer chamber by the transfer robot. If the composite wiring film forming apparatus is configured to be transported between the chamber and the wiring film forming chamber, a series of processes from pretreatment to wiring film formation can be performed with this apparatus.
- FIGS. 1 and 4 the apparatus shown in FIGS. 1 and 4 as the film forming apparatus will be described with reference to the flow charts shown in FIGS. 2 and 5. .
- a substrate holder 13 on which a substrate 12 is placed is provided below a vacuum chamber 11 of the film forming apparatus 1.
- the substrate holder 13 includes a stage 131 for placing the substrate 12 and a heater 132 for heating the substrate 12 placed on the stage.
- a raw material gas introduction system 14 is connected to an introduction port (not shown) opened in the side wall of the chamber, and a halogen gas introduction system 15 is connected to another introduction port.
- the gas introduction systems 14 and 15 are schematically shown as being vertically arranged on the same side surface, but they may be arranged horizontally, and if the desired purpose can be achieved, the connection positions are arranged. There is no limit.
- This source gas is an organic metal compound gas containing a metal constituent element (Ta) as a source of a barrier film formed on the substrate 12 in the chemical structure.
- This raw material gas introduction system 14 includes a gas cylinder 141 filled with a raw material gas, a gas cylinder 142, and a gas introduction pipe 143 connected to the raw material gas inlet through this valve, which is not shown.
- the mass flow controller can control the flow rate.
- the halogen gas introduction system 15 includes a gas cylinder 151, a gas clutch 152, a gas introduction pipe 153, and a mass inlet controller (not shown).
- the organometallic compound in addition to the ability to use a source gas filled gas cylinder, the organometallic compound is housed in a heated and insulated container, and Ar is used as a bubbling gas.
- the inert gas may be supplied into the container via a mass flow controller or the like to sublimate the raw material, and the raw material gas may be introduced into the film forming apparatus together with the publishing gas, or via a vaporizer or the like.
- the vaporized source gas may be introduced into the film forming apparatus.
- the reaction gas introduction system 16 is connected to the vacuum chamber 11 at an inlet (not shown) opened at a position different from the position where the inlet for introducing the source gas or the halogen gas is opened. It has been.
- This reaction gas is a gas that reacts with a reaction product of the raw material gas and the halogen gas to deposit a metal thin film (TaN) containing tantalum in the chemical structure, such as hydrogen gas or ammonia gas.
- This reaction gas introduction system 16 includes a source gas introduction system 14 and a halogen gas.
- the connection position is not limited as long as the desired purpose can be achieved.
- the connection may be made on the same side as the gas introduction systems 14 and 15.
- the reaction gas introduction system 16 includes a gas cylinder 161 filled with a reaction gas, a gas valve 162, a gas introduction pipe 163 connected to the reaction gas introduction port via the valve, a gas valve 162, and a reaction gas introduction Although not shown in the figure, a mass flow controller is also connected.
- the gas valve 162 is opened, the reaction gas is supplied from the gas cylinder 161 through the gas introduction pipe 163 into the radical generator 164, and radicals are generated in the radical generator 164. This radical is introduced into the vacuum chamber 11.
- the positional relationship among the inlet of the source gas, the inlet of the halogen gas, and the inlet of the reactive gas is such that the source gas and the halogen gas are reacted on the surface of the substrate 12 and the product obtained
- any gas introduction port be opened near the substrate holder 13 in order to cause the reaction gas to react with the reaction gas to form a desired barrier film. Therefore, as shown in FIG. 1, for example, the inlet for the source gas, the halogen gas, and the reactive gas may be opened on the side surface of the vacuum chamber 11 and slightly above the horizontal direction of the surface of the substrate 12. Further, the gas introduction systems 14, 15, 16 may be connected so as to introduce each gas from the upper part of the wafer.
- an exhaust port (not shown) for connecting the vacuum exhaust system 17 is opened in addition to the above gas introduction ports.
- the exhaust port it is preferable to open the exhaust port in the vicinity of the substrate holder 13. Therefore, as shown in Fig. 1, the exhaust port should be opened at the bottom of the vacuum chamber 11.
- FIG. 2 is a flowchart for explaining an embodiment of a process for forming a tantalum nitride film using the film forming apparatus 1 shown in FIG.
- the substrate 12 is carried into the film forming apparatus 1 evacuated under a known pressure by the evacuation system 17 (Sl). .
- a known base adhesion layer may be provided on the insulating layer.
- a voltage is applied to the target to generate plasma, and the target is sputtered to form a substrate-side adhesion layer as a metal thin film on the surface of the substrate. Good.
- predetermined pressure preferably after the loading of the base plate 12 in the film forming apparatus 1, which is evacuated to less than 10_ 5 Pa (S1), a predetermined temperature the substrate with a heater 132, for example 300 ° Heat to below C (S2).
- a purge gas composed of an inert gas such as Ar or N was introduced (S1
- a source gas (M0 gas) made of a tantalum-containing organometallic compound is introduced from the source gas introduction system 14 near the surface of the substrate, and this source gas is adsorbed on the surface of the substrate (S 3 — 2).
- the gas valve 142 of the source gas introduction system 14 is closed to stop the introduction of the source gas, and the source gas is discharged by the vacuum exhaust system 17 (S3_3).
- a halogen gas of, for example, 5 sccm or less is introduced from the halogen gas introduction system 15 into the film forming apparatus 1 (S3-5), and reacted with the source gas adsorbed on the substrate.
- the (Hal) (R, R ') compound is formed (S3-6). In this case, if it exceeds 5 sccm, the resistance value of the barrier film finally obtained does not become a desired value.
- the gas valve 152 of the halogen gas introduction system 15 is closed to stop the introduction of the halogen gas, the purge gas is introduced (S3-7), the residual halogen gas is purged, and the purge gas is evacuated. (S3—8).
- a very thin metal thin film that is, an atomic layer, that is, a barrier film is formed on the substrate-side adhesion layer (S4).
- a sputtering gas such as Ar is used in accordance with a known sputtering method, and a voltage is applied to the target. Then, plasma is generated, and the target is sputtered to form a metal thin film, that is, a wiring film side adhesion layer (barrier film side base layer) on the surface of the tantalum nitride film (S6).
- FIG. 3 shows the gas flow sequence based on the flow chart in Fig. 2.
- FIG. 4 is another film forming apparatus for carrying out the tantalum nitride film forming method of the present invention.
- a sputtering target is further installed in the apparatus of FIG. 1 so that sputtering can be performed simultaneously.
- a film forming apparatus The same components as those in Fig. 1 are denoted by the same reference numerals and description thereof is omitted.
- a target 18 is provided above the vacuum chamber 11 at a position facing the substrate holder 13.
- the target 18 is connected to a voltage applying device 19 for generating plasma that sputters the surface and releases particles of the target constituent material.
- the target 18 is composed of a main component of a metal constituent element (Ta) contained in the source gas.
- the voltage application device 19 includes a DC voltage generation device 191 and an electrode 192 connected to the target 18. This voltage application device may be one in which AC is superimposed on DC. Further, a high frequency generator may be connected to the substrate holder so that a bias can be applied.
- a sputtering gas introduction system is introduced into an introduction port (not shown) opened at a position different from the position where the introduction port for introducing the source gas, halogen gas and reaction gas is opened. 20 is connected.
- the sputtering gas may be a known inert gas such as argon gas or xenon gas.
- the sputtering gas introduction system 20 includes a gas cylinder 201 filled with a sputtering gas, a gas nonreb 202, a gas introduction pipe 203 connected to the introduction port of the sputtering gas via this valve, and a mass flow controller (not shown). It is made up of
- the positions of the source gas inlet, the halogen gas inlet, and the reactive gas inlet As described above, in order to form a desired barrier film by performing a predetermined reaction on the surface of the substrate 12 as described above, it is desirable that any gas inlet is opened in the vicinity of the substrate holder 13. On the other hand, since the sputtering gas inlet is used to generate plasma in which the sputtering gas sputters the surface of the target 18, the inlet is preferably opened in the vicinity of the target 18.
- the introduction port of the source gas, the halogen gas, and the reaction gas is located at a position away from the target 18. It is desirable to open. Further, in order to prevent the source gas, the halogen gas and the reaction gas from diffusing to the target 18 side by the sputtering gas, it is desirable that the sputtering gas inlet is opened at a position away from the substrate holder 13. . Therefore, as shown in FIG.
- the inlet for the source gas, the halogen gas, and the reactive gas is opened on the side surface of the vacuum chamber 11 and slightly above the horizontal direction of the surface of the substrate 12, and the inlet for the sputtering gas is opened in the vacuum chamber. It is only necessary to open the side surface of the target 11 slightly below the horizontal direction of the surface of the target 18.
- the exhaust port is connected to the substrate holder 13 so that the gases do not flow in the direction of the target 18 and contaminate the target. It is desirable to open in the vicinity and away from the target 18. Therefore, as shown in FIG. 4, the exhaust port may be opened at the bottom surface of the vacuum chamber 11 as described above.
- the film forming apparatus of FIG. 4 performs film formation by sputtering and film formation by a source gas, hydrogen gas, a reactive gas, and a reactive gas on the heated substrate in the same vacuum chamber 11. Yes.
- FIG. 5 is a flowchart for explaining an embodiment of a process for forming a laminated film using the film forming apparatus shown in FIG. The main points that differ from the flowchart in Fig. 2 are described below.
- the substrate 12 is carried into the film forming apparatus 1 evacuated to a predetermined pressure by the evacuation system 17 (S Do [0057]
- a sputtering gas such as Ar is introduced from the sputtering gas introduction system 20 (S2), and the voltage is applied from the voltage application device 19 to the target 18. May be applied to generate plasma (S3), and the target 18 may be sputtered to form a metal thin film, that is, a substrate-side adhesion layer (substrate-side underlayer) on the surface of the substrate 12 (S4).
- step S4 the substrate 12 is heated to a predetermined temperature by the heater 132 (S5).
- Steps S6-1 to S6-11 shown in Fig. 5 are performed in the same manner as steps S3-1 to S3-11 in Fig. 2, and an atomic layer is formed on the substrate-side adhesion layer.
- a very thin metal film that is, a tantalum nitride film, which is a NOR film, is formed (S7).
- the steps from S6-1 to S6-11 are repeated until the barrier film has a desired thickness (S8).
- the gas flow sequence based on the flow diagram in Fig. 5 is the same as in Fig. 3.
- the steps from S6-1 to S6-11 are performed.
- the process and the introduction of the sputtering gas by the sputtering gas introduction system 20 may be alternately repeated a plurality of times until a desired film thickness is obtained.
- an inert gas such as Ar is introduced and discharged to form a source gas composition.
- a target 18 having tantalum as a main component as a main component is sputtered so that tantalum particles as sputtering particles are incident on a thin film formed on the substrate 12.
- tantalum can be incident on the substrate 12 from the target 18 by sputtering, the tantalum content in the barrier film can be further increased, and the tantalum-rich tantalum nitride of the desired low resistance pile can be obtained.
- a material film can be obtained.
- the source gas is an organic tantalum compound
- the constituent element tantalum
- the constituent element is incident on the surface of the substrate 12 by the sputtering, so that decomposition is promoted and impurities such as C and N are removed from the barrier film.
- impurities such as C and N are removed from the barrier film.
- a low resistance barrier film with few impurities can be obtained.
- This sputtering is performed to implant tantalum particles into a tantalum nitride film, sputter remove C and N, and modify the film. Therefore, the conditions under which the tantalum film is not formed, i.e. It is necessary to carry out under conditions that allow for the teaching. Therefore, for example, it is necessary to adjust DC power and RF power so that DC power is low and RF power is high. For example, by setting the DC power to 5 kW or less and increasing the RF power, for example, 400 to 800 W, the condition that the tantalum film is not formed can be achieved. Since RF power depends on DC power, the degree of film modification can be adjusted by adjusting DC power and RF power appropriately. Further, the sputtering temperature may be a normal sputtering temperature, for example, the same temperature as the formation temperature of the tantalum nitride film.
- a sputtering gas such as Ar is introduced from the sputtering gas introduction system 20 according to a known sputtering method.
- a voltage is applied from the voltage application device 19 to the target 18 to generate plasma (S10), and the target 18 is sputtered to form a metal thin film on the surface of the barrier film, that is, the wiring film side adhesion layer ( A barrier film side base layer) may be formed (S11).
- a laminated film is formed on the substrate 12 through the above steps, and then a wiring film is formed on the wiring film side adhesion layer.
- the introduction of the source gas, the halogen gas, and the reactive gas is performed at a position away from the target 18, and the source gas, It is desirable to introduce the sputtering gas at a position away from the substrate holder 13 in order to prevent the halogen gas and the reaction gas from diffusing to the target 18 side.
- the exhaust gas is supplied to the vicinity of the substrate holder 13 so that these gases do not flow toward the target 18 and contaminate the target. However, it is desirable to carry it away from the target 18
- FIG. 6 schematically shows a configuration diagram of a composite wiring film forming apparatus including the film forming apparatus 1 shown in FIGS. 1 and 4.
- This composite wiring film forming apparatus 100 includes a pre-processing unit 101, a film-forming processing unit 103, and a relay unit 102 that connects them. In either case, before processing, the inside is evacuated. Keep it in the air.
- the pretreatment substrate disposed in the carry-in chamber 101a is carried into the degassing chamber 101c by the pretreatment unit side loading / unloading port bot 101b.
- the substrate before processing is heated to evaporate moisture on the surface and perform degassing processing.
- the degassed substrate is carried into the reduction treatment chamber 101d by the carry-in / out bot 101b.
- annealing is performed to heat the substrate and remove the metal oxide in the lower wiring with a reducing gas such as hydrogen gas.
- the substrate is taken out from the reduction processing chamber 101d by the carry-in / out entrance bot 101b and carried into the relay unit 102.
- the loaded substrate is transferred by the relay unit 102 to the film formation processing unit side loading / unloading bot 103a of the film formation processing unit 103.
- the transferred substrate is carried into the film forming chamber 103b by the carry-in / out entrance bot 103a.
- the film formation chamber 103b corresponds to the film formation apparatus 1 described above.
- the laminated film on which the barrier film and the adhesive layer are formed in the film formation chamber 103b is carried out of the film formation chamber 103b by the carry-in / out entrance bot 103a and carried into the wiring film chamber 103c.
- a wiring film is formed on the barrier film (or an adhesion layer when an adhesion layer is formed on the barrier film).
- the substrate is moved from the wiring film chamber 103c to the carry-out chamber 103d by the carry-in / out entrance bot 103a and carried out.
- the composite wiring film forming apparatus 100 is configured such that the pretreatment unit 101 has one degassing chamber 101c and one reduction treatment chamber 101d, and the film formation processing unit 103 has a film formation chamber 103b.
- One wiring film chamber 103c is provided for each, but the present invention is not limited to this configuration.
- the pre-processing unit 101 and the film-forming processing unit 103 are polygonal, and the degassing chamber 101 c and the reduction processing chamber 101, and the film-forming chamber 103 b and the wiring film chamber 103 c are formed on the respective surfaces. If a plurality of are provided, the processing capability is further improved.
- the film forming apparatus 1 shown in FIG. 1 was used, and pentadimethylamino as a source gas.
- Tantalum (MO) gas, fluorine gas as halogen gas and H gas as reactive gas was used, and pentadimethylamino as a source gas.
- Tantalum (MO) gas, fluorine gas as halogen gas and H gas as reactive gas
- a tantalum nitride film was formed according to the process flow diagram shown in FIG.
- a degassing pretreatment process for the surface of the substrate 12 having the SiO insulating film is performed.
- the substrate 12 After conducting and carries the substrate 12 in the deposition apparatus 1, which is evacuated to less than 10- 5 Pa by the vacuum evacuation system 17 (Sl).
- the substrate is not particularly limited.
- a voltage is applied to a target having Ar sputtering gas and Ta as main components to generate plasma, and the target is generated.
- a substrate having a substrate-side adhesion layer formed on the surface by sputtering may be used.
- the substrate was heated to 250 ° C by the heater 132 (S2).
- the source gas was supplied from the source gas introduction system 14 to the vicinity of the surface of the substrate at 5 sccm for 5 seconds (S3-1, S3-2).
- the gas valve 142 of the source gas introduction system 14 is closed to stop the introduction of the source gas, and the inside of the deposition apparatus 1 is evacuated for 2 seconds by the vacuum exhaust system 17, and the source gas is discharged.
- fluorine gas was introduced into the film forming apparatus 1 from the halogen gas introduction system 15 at 5 sccm for 5 seconds (S3-5), and the source gas (MO Gas) to form TaN F (R, R ') compounds (S3-6).
- the introduction of the halogen gas was stopped and Ar purge gas was introduced (S3-7). After purging the residual fluorine gas, the purge gas was evacuated (S3-8).
- the gas valve 162 of the reaction gas introduction system 16 was closed to stop the introduction of the reaction gas, and the inside of the film forming apparatus 1 was evacuated for 2 seconds by the vacuum exhaust system 17 to discharge the reaction gas (S3 — 11).
- an atomic layer is formed on the substrate-side adhesion layer.
- a very thin metal film that is, a barrier film made of tantalum-rich tantalum nitride was formed (S4).
- the steps from S3-1 to S3-11 were repeated predetermined times until the barrier film had a desired thickness (S5).
- the reaction gas (H radical) was irradiated for 5 seconds to form a film.
- the film is formed using MO gas and fluorine gas (million ⁇ 'cm), and the film is formed using M ⁇ gas, fluorine gas and H radical (irradiated for 3 seconds) ( 300,000 ⁇ 'cm), and a specific resistance (450 ⁇ cm) lower than that (4,800 ⁇ ' cm) when deposited using MO gas, fluorine gas, and H radical (irradiated for 5 seconds) Obtained.
- the film obtained by the deposition of MO gas and fluorine gas is almost in the state of an insulating film, but when this film is treated with H radicals, it depends on the treatment time. It can be seen that the resistivity decreases and the resistivity decreases as the processing time increases. From this result, it is understood that the halogen radical, R group and N are effectively removed by performing the H radical treatment preferably for 10 seconds or more.
- the bond between N and R of the Ta_N_ (R, R ') bond of the source gas is partially broken by the halogen.
- R is selectively removed, but then irradiation with H radicals causes a bond between Ta and N in a high resistance halogenated Ta compound, a bond between N and a halogen atom, and a remaining N and R bond.
- the bond is broken and the halogen atoms, C and N are removed, so that the content ratio of C and N decreases, the formed film composition strength becomes STa rich, and the specific resistance of the film decreases. Think It is done.
- a voltage is applied to the target using Ar sputtering gas. Then, plasma may be generated, and the target may be sputtered to form a metal thin film, that is, a wiring film side adhesion layer as an underlayer on the surface of the above-mentioned nore film (S6).
- a Cu wiring film was formed on the substrate 12 on which the laminated film was formed through the above steps, that is, on the barrier film side adhesive layer according to known process conditions. It was confirmed that the adhesion between the films was excellent.
- the film forming apparatus 1 shown in FIG. 4 is used, and pentadimethylamino tantalum (MO) gas is used as the source gas, fluorine gas is used as the halogen gas, and H gas is used as the reactive gas.
- MO pentadimethylamino tantalum
- the substrate 12 subjected to the surface degassing pretreatment step was subjected to vacuum evacuation system.
- Ar is introduced as a sputtering gas from the sputtering gas introduction system 20 (S2), and a voltage is applied from the voltage application device 19 to the Ta-containing target 18 to generate plasma. It may be generated (S3), and the target 18 may be sputtered to form a metal thin film, that is, a substrate-side adhesion layer on the surface of the substrate 12 (S4).
- step S4 the substrate 12 was heated to 250 ° C with a heater 132 (S5), and after flowing an Ar purge gas, the source gas was supplied from the source gas introduction system 14 to 5 sccm near the surface of the substrate. For 5 seconds.
- Steps S6-1 to S6-11 shown in Fig. 5 are performed in the same manner as steps S3-1 to S3-11 in Example 1, and the atomic layer is formed on the substrate-side adhesion layer.
- a very thin metal thin film was deposited to form a barrier film, which is a Ta-rich tantalum nitride film (S7).
- the treatment time by irradiation with radicals derived from the reaction gas was 10 seconds.
- the content of tantalum in the barrier film could be further increased, and a desired low-resistance tantalum-rich tantalum nitride film could be obtained.
- impurities such as O, C, and N are ejected from the barrier film to obtain a low resistance noble film with few impurities. I was able to.
- the modified tantalum nitride film having a desired film thickness is formed as described above, in some cases, for example, Ar sputtering gas is introduced from the sputtering gas introduction system 20 according to a known method (S9). Then, a voltage is applied from the voltage application device 19 to the target 18 to generate plasma (S10), and the target 18 is sputtered to form a metal thin film, that is, a wiring film side adhesion layer as an underlayer on the surface of the barrier film. Yes (Sl l).
- the introduction of the source gas, the halogen gas, and the reactive gas is performed at a position away from the target 18 and further by the sputtering gas.
- the exhaust gas is disposed near the substrate holder 13 so that these gases do not flow in the direction of the target 18 and contaminate the target. Therefore, it is desirable to carry out at a position away from the target.
- halogen gas chlorine gas, bromine gas or iodine gas was used instead of fluorine gas, and H gas was used as a reaction gas for generating H radicals.
- a low-resistance tantalum nitride film is formed that is useful as a barrier film for ensuring adhesion with a Cu film having a low C and N content and a high Ta / N composition ratio. can do. Therefore, the present invention is applicable to a thin film formation process in the semiconductor device field.
- FIG. 1 is a configuration diagram schematically showing an example of a film forming apparatus for carrying out the film forming method of the present invention.
- FIG. 2 is a flow diagram for explaining a process for forming a thin film using the apparatus of FIG.
- FIG. 3 Gas flow sequence diagram based on the flow diagram of Fig. 2.
- FIG. 4 is a configuration diagram schematically showing another example of a film forming apparatus for carrying out the film forming method of the present invention.
- FIG. 5 is a flowchart for explaining a process of forming a thin film using the apparatus of FIG.
- FIG. 6 is a schematic configuration diagram of a composite wiring film forming apparatus incorporating a film forming apparatus for carrying out the film forming method of the present invention.
- Garden 7 Description of specific resistance P Omega 'cm) graphs c code indicating each of the thin film obtained in Example 1
Abstract
Description
Claims
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US7595270B2 (en) | 2007-01-26 | 2009-09-29 | Asm America, Inc. | Passivated stoichiometric metal nitride films |
US9631272B2 (en) | 2008-04-16 | 2017-04-25 | Asm America, Inc. | Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds |
US10002936B2 (en) | 2014-10-23 | 2018-06-19 | Asm Ip Holding B.V. | Titanium aluminum and tantalum aluminum thin films |
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JP5233562B2 (ja) * | 2008-10-04 | 2013-07-10 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
KR101651352B1 (ko) * | 2015-03-12 | 2016-08-30 | 한양대학교 에리카산학협력단 | 증착장비 |
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EP1956113A1 (en) * | 2007-01-26 | 2008-08-13 | ASM America, Inc. | Plasma-enhanced ALD of tantalum nitride films |
US7595270B2 (en) | 2007-01-26 | 2009-09-29 | Asm America, Inc. | Passivated stoichiometric metal nitride films |
US7598170B2 (en) | 2007-01-26 | 2009-10-06 | Asm America, Inc. | Plasma-enhanced ALD of tantalum nitride films |
US9631272B2 (en) | 2008-04-16 | 2017-04-25 | Asm America, Inc. | Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds |
US10002936B2 (en) | 2014-10-23 | 2018-06-19 | Asm Ip Holding B.V. | Titanium aluminum and tantalum aluminum thin films |
US10636889B2 (en) | 2014-10-23 | 2020-04-28 | Asm Ip Holding B.V. | Titanium aluminum and tantalum aluminum thin films |
US11139383B2 (en) | 2014-10-23 | 2021-10-05 | Asm Ip Holding B.V. | Titanium aluminum and tantalum aluminum thin films |
Also Published As
Publication number | Publication date |
---|---|
CN101091002A (zh) | 2007-12-19 |
TWI408736B (zh) | 2013-09-11 |
TW200701350A (en) | 2007-01-01 |
JP4931171B2 (ja) | 2012-05-16 |
JP2006241522A (ja) | 2006-09-14 |
KR100942684B1 (ko) | 2010-02-16 |
US8158198B2 (en) | 2012-04-17 |
CN101091002B (zh) | 2010-08-25 |
KR20070085600A (ko) | 2007-08-27 |
US20090246375A1 (en) | 2009-10-01 |
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