JP2006241520A5 - - Google Patents

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Publication number
JP2006241520A5
JP2006241520A5 JP2005059081A JP2005059081A JP2006241520A5 JP 2006241520 A5 JP2006241520 A5 JP 2006241520A5 JP 2005059081 A JP2005059081 A JP 2005059081A JP 2005059081 A JP2005059081 A JP 2005059081A JP 2006241520 A5 JP2006241520 A5 JP 2006241520A5
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JP
Japan
Prior art keywords
target
application device
voltage application
voltage
substrate holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005059081A
Other languages
English (en)
Japanese (ja)
Other versions
JP4931169B2 (ja
JP2006241520A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2005059081A external-priority patent/JP4931169B2/ja
Priority to JP2005059081A priority Critical patent/JP4931169B2/ja
Priority to TW095106837A priority patent/TWI392018B/zh
Priority to KR1020077012364A priority patent/KR100942683B1/ko
Priority to CN2006800014582A priority patent/CN101091000B/zh
Priority to PCT/JP2006/304068 priority patent/WO2006093258A1/ja
Priority to US11/885,349 priority patent/US20080199601A1/en
Publication of JP2006241520A publication Critical patent/JP2006241520A/ja
Publication of JP2006241520A5 publication Critical patent/JP2006241520A5/ja
Publication of JP4931169B2 publication Critical patent/JP4931169B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2005059081A 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法 Expired - Fee Related JP4931169B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2005059081A JP4931169B2 (ja) 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法
TW095106837A TWI392018B (zh) 2005-03-03 2006-03-01 Method for forming tantalum nitride film
PCT/JP2006/304068 WO2006093258A1 (ja) 2005-03-03 2006-03-03 タンタル窒化物膜の形成方法
CN2006800014582A CN101091000B (zh) 2005-03-03 2006-03-03 钽氮化物膜的形成方法
KR1020077012364A KR100942683B1 (ko) 2005-03-03 2006-03-03 탄탈 질화물막의 형성 방법
US11/885,349 US20080199601A1 (en) 2005-03-03 2006-03-03 Method for Forming Tantalum Nitride Film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005059081A JP4931169B2 (ja) 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法

Publications (3)

Publication Number Publication Date
JP2006241520A JP2006241520A (ja) 2006-09-14
JP2006241520A5 true JP2006241520A5 (enExample) 2008-04-24
JP4931169B2 JP4931169B2 (ja) 2012-05-16

Family

ID=36941288

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005059081A Expired - Fee Related JP4931169B2 (ja) 2005-03-03 2005-03-03 タンタル窒化物膜の形成方法

Country Status (6)

Country Link
US (1) US20080199601A1 (enExample)
JP (1) JP4931169B2 (enExample)
KR (1) KR100942683B1 (enExample)
CN (1) CN101091000B (enExample)
TW (1) TWI392018B (enExample)
WO (1) WO2006093258A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7098131B2 (en) * 2001-07-19 2006-08-29 Samsung Electronics Co., Ltd. Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
KR101271869B1 (ko) * 2008-12-09 2013-06-07 가부시키가이샤 알박 질화 탄탈막의 형성 방법 및 그 성막 장치
US8815344B2 (en) * 2012-03-14 2014-08-26 Applied Materials, Inc. Selective atomic layer depositions
US9460932B2 (en) 2013-11-11 2016-10-04 Applied Materials, Inc. Surface poisoning using ALD for high selectivity deposition of high aspect ratio features

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100200739B1 (ko) * 1996-10-16 1999-06-15 윤종용 장벽금속막 형성방법
US6153519A (en) * 1997-03-31 2000-11-28 Motorola, Inc. Method of forming a barrier layer
US6297147B1 (en) * 1998-06-05 2001-10-02 Applied Materials, Inc. Plasma treatment for ex-situ contact fill
US7098131B2 (en) * 2001-07-19 2006-08-29 Samsung Electronics Co., Ltd. Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
US7049226B2 (en) * 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
JP2003342732A (ja) * 2002-05-20 2003-12-03 Mitsubishi Materials Corp タンタル錯体を含む有機金属化学蒸着法用溶液原料及びそれを用いて作製されたタンタル含有薄膜
JP2005203569A (ja) * 2004-01-15 2005-07-28 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法及び半導体装置

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