JP2006237614A - 投影光学系及びこれを適用した極紫外線リソグラフィ装置 - Google Patents
投影光学系及びこれを適用した極紫外線リソグラフィ装置 Download PDFInfo
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- JP2006237614A JP2006237614A JP2006047188A JP2006047188A JP2006237614A JP 2006237614 A JP2006237614 A JP 2006237614A JP 2006047188 A JP2006047188 A JP 2006047188A JP 2006047188 A JP2006047188 A JP 2006047188A JP 2006237614 A JP2006237614 A JP 2006237614A
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- mirror
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- extreme ultraviolet
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- 230000003287 optical effect Effects 0.000 title claims abstract description 90
- 238000001459 lithography Methods 0.000 title claims abstract 3
- 201000009310 astigmatism Diseases 0.000 claims description 28
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 11
- 230000004075 alteration Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000007687 exposure technique Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 206010010071 Coma Diseases 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
【解決手段】非点収差の線形成分を減らすように互いのミラーの光軸が共有しない非軸上に配置される第1ミラー10及び第2ミラー30を備え、第1ミラー10及び第2ミラー30は焦点を共有する共有焦点を有することを特徴とする投影光学系である。
【選択図】図2
Description
100 反射形マスク、
110 ウェーハ。
Claims (7)
- 非点収差の線形成分を減らすように互いのミラーの光軸が共有しない非軸上に配置される第1ミラー及び第2ミラーを備え、
前記第1ミラー及び前記第2ミラーは焦点を共有する共有焦点を有することを特徴とする投影光学系。 - 前記第1ミラーの親ミラー軸と前記第2ミラーの親ミラー軸とが前記共有焦点で交差することを特徴とする請求項1に記載の投影光学系。
- 前記第1ミラー及び前記第2ミラーの対を少なくとも一つ以上備えることを特徴とする請求項1に記載の投影光学系。
- マスクのパターン情報を有するビームを光学系によりウェーハに照射するリソグラフィ装置において、
前記光学系は、請求項1ないし請求項4のうち何れか1項に記載の投影光学系を含むことを特徴とするリソグラフィ装置。 - 前記ビームは、極紫外線ビームであることを特徴とする請求項5に記載のリソグラフィ装置。
- 前記マスクは、反射型マスクであることを特徴とする請求項6に記載のリソグラフィ装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050015051A KR100674959B1 (ko) | 2005-02-23 | 2005-02-23 | 비축상 프로젝션 광학계 및 이를 적용한 극자외선 리소그래피 장치 |
KR10-2005-0015051 | 2005-02-23 |
Publications (2)
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JP2006237614A true JP2006237614A (ja) | 2006-09-07 |
JP4933110B2 JP4933110B2 (ja) | 2012-05-16 |
Family
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JP2006047188A Active JP4933110B2 (ja) | 2005-02-23 | 2006-02-23 | 投影光学系及びこれを適用した極紫外線リソグラフィ装置 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7274513B2 (ja) |
JP (1) | JP4933110B2 (ja) |
KR (1) | KR100674959B1 (ja) |
CN (1) | CN1825210B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170011288A (ko) * | 2015-07-22 | 2017-02-02 | 경희대학교 산학협력단 | 비축 반사 광학계 장치 |
KR101789383B1 (ko) | 2015-11-23 | 2017-10-25 | 경희대학교 산학협력단 | 비축 반사 광학계 장치 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100674959B1 (ko) * | 2005-02-23 | 2007-01-26 | 삼성전자주식회사 | 비축상 프로젝션 광학계 및 이를 적용한 극자외선 리소그래피 장치 |
KR102023875B1 (ko) | 2018-10-16 | 2019-09-23 | 경희대학교 산학협력단 | 선형 비점수차가 제거된 비축 반사 광학계 장치 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03139822A (ja) * | 1989-10-13 | 1991-06-14 | American Teleph & Telegr Co <Att> | 半導体リソグラフィ用装置 |
JPH04286312A (ja) * | 1991-03-15 | 1992-10-12 | Toshiba Corp | 照明装置 |
JPH0527445A (ja) * | 1991-07-25 | 1993-02-05 | Mitsubishi Electric Corp | X線露光装置 |
JPH06214318A (ja) * | 1993-01-20 | 1994-08-05 | Nec Corp | 反射型ホモジナイザーおよび反射型照明光学装置 |
JPH07147230A (ja) * | 1994-08-04 | 1995-06-06 | Canon Inc | 縮小投影露光装置および半導体製造方法 |
JPH07220997A (ja) * | 1994-01-31 | 1995-08-18 | Mitsubishi Electric Corp | 投影露光装置 |
JPH07244199A (ja) * | 1994-03-02 | 1995-09-19 | Hitachi Ltd | 投影露光方法及びその装置 |
JP2004029625A (ja) * | 2002-06-28 | 2004-01-29 | Nikon Corp | 投影光学系、露光装置及び露光方法 |
JP2005277414A (ja) * | 2004-03-22 | 2005-10-06 | Asml Netherlands Bv | リソグラフィ装置、デバイス製造方法及び可変減衰器 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2565149B2 (ja) * | 1995-04-05 | 1996-12-18 | キヤノン株式会社 | 回路の製造方法及び露光装置 |
US5710917A (en) * | 1995-06-07 | 1998-01-20 | International Business Machines Corporation | Method for deriving data mappings and data aliases |
KR100250142B1 (ko) * | 1997-07-11 | 2000-03-15 | 유무성 | 노광장치용 반사형 광학계 |
JP2002543467A (ja) * | 1999-04-30 | 2002-12-17 | コジェント・ライト・テクノロジーズ・インコーポレイテッド | 改善された、小さなアークランプからより大きな目標への光の結合 |
US6680610B1 (en) * | 1999-05-24 | 2004-01-20 | Walid E. Kyriakos | Apparatus and method for parallel MR data acquisition and parallel image reconstruction from multiple receiver coil arrays for fast MRI |
EP1093021A3 (en) * | 1999-10-15 | 2004-06-30 | Nikon Corporation | Projection optical system as well as equipment and methods making use of said system |
JP4532647B2 (ja) | 2000-02-23 | 2010-08-25 | キヤノン株式会社 | 露光装置 |
DE10052289A1 (de) * | 2000-10-20 | 2002-04-25 | Zeiss Carl | 8-Spiegel-Mikrolithographie-Projektionsobjektiv |
JP2003233005A (ja) * | 2002-02-07 | 2003-08-22 | Canon Inc | 反射型投影光学系、露光装置及びデバイス製造方法 |
EP1513019B1 (en) * | 2003-09-02 | 2012-07-25 | Canon Kabushiki Kaisha | Projection optical system, exposure apparatus and device fabricating method |
KR100674959B1 (ko) * | 2005-02-23 | 2007-01-26 | 삼성전자주식회사 | 비축상 프로젝션 광학계 및 이를 적용한 극자외선 리소그래피 장치 |
-
2005
- 2005-02-23 KR KR1020050015051A patent/KR100674959B1/ko active IP Right Grant
-
2006
- 2006-02-22 US US11/358,074 patent/US7274513B2/en active Active
- 2006-02-23 JP JP2006047188A patent/JP4933110B2/ja active Active
- 2006-02-23 CN CN2006100599969A patent/CN1825210B/zh active Active
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- 2007-08-14 US US11/889,511 patent/US7474468B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03139822A (ja) * | 1989-10-13 | 1991-06-14 | American Teleph & Telegr Co <Att> | 半導体リソグラフィ用装置 |
JPH04286312A (ja) * | 1991-03-15 | 1992-10-12 | Toshiba Corp | 照明装置 |
JPH0527445A (ja) * | 1991-07-25 | 1993-02-05 | Mitsubishi Electric Corp | X線露光装置 |
JPH06214318A (ja) * | 1993-01-20 | 1994-08-05 | Nec Corp | 反射型ホモジナイザーおよび反射型照明光学装置 |
JPH07220997A (ja) * | 1994-01-31 | 1995-08-18 | Mitsubishi Electric Corp | 投影露光装置 |
JPH07244199A (ja) * | 1994-03-02 | 1995-09-19 | Hitachi Ltd | 投影露光方法及びその装置 |
JPH07147230A (ja) * | 1994-08-04 | 1995-06-06 | Canon Inc | 縮小投影露光装置および半導体製造方法 |
JP2004029625A (ja) * | 2002-06-28 | 2004-01-29 | Nikon Corp | 投影光学系、露光装置及び露光方法 |
JP2005277414A (ja) * | 2004-03-22 | 2005-10-06 | Asml Netherlands Bv | リソグラフィ装置、デバイス製造方法及び可変減衰器 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170011288A (ko) * | 2015-07-22 | 2017-02-02 | 경희대학교 산학협력단 | 비축 반사 광학계 장치 |
KR101723736B1 (ko) | 2015-07-22 | 2017-04-06 | 경희대학교 산학협력단 | 비축 반사 광학계 장치 |
KR101789383B1 (ko) | 2015-11-23 | 2017-10-25 | 경희대학교 산학협력단 | 비축 반사 광학계 장치 |
Also Published As
Publication number | Publication date |
---|---|
US20070285798A1 (en) | 2007-12-13 |
US7274513B2 (en) | 2007-09-25 |
CN1825210A (zh) | 2006-08-30 |
CN1825210B (zh) | 2010-05-12 |
KR20060093920A (ko) | 2006-08-28 |
KR100674959B1 (ko) | 2007-01-26 |
US20060188822A1 (en) | 2006-08-24 |
US7474468B2 (en) | 2009-01-06 |
JP4933110B2 (ja) | 2012-05-16 |
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