JP2006192568A - 半径方向に交互に位置する溝セグメント配置形態を有するcmpパッド - Google Patents
半径方向に交互に位置する溝セグメント配置形態を有するcmpパッド Download PDFInfo
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- JP2006192568A JP2006192568A JP2006005756A JP2006005756A JP2006192568A JP 2006192568 A JP2006192568 A JP 2006192568A JP 2006005756 A JP2006005756 A JP 2006005756A JP 2006005756 A JP2006005756 A JP 2006005756A JP 2006192568 A JP2006192568 A JP 2006192568A
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- 238000005498 polishing Methods 0.000 claims abstract description 267
- 230000007704 transition Effects 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000008859 change Effects 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 6
- 238000007517 polishing process Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 61
- 238000013461 design Methods 0.000 description 14
- 239000013598 vector Substances 0.000 description 14
- 239000000126 substance Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 101710178035 Chorismate synthase 2 Proteins 0.000 description 1
- 101710152694 Cysteine synthase 2 Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
【解決手段】研磨パッド104は、環状の研磨トラック122を有し、研磨トラックをそれぞれが横切る複数の溝148を含む。各溝は、複数の流れ制御セグメントCS1〜CS3と、研磨トラック内に位置する少なくとも二つの勾配不連続部とを含む。
【選択図】図2A
Description
Claims (10)
- a)研磨媒体の存在下で磁性基材、光学基材及び半導体基材の少なくとも一つを研磨するために形成された研磨層であって、回転中心を有し、かつ回転中心と同心であり、幅を有する環状研磨トラックを含む研磨層、ならびに
b)研磨層に位置する複数の溝であって、それぞれが、環状研磨トラックの幅全体を横切り、環状研磨トラック内に少なくとも二つの不連続部を有する外部曲率を含み、少なくとも二つの不連続部が、互いに反対方向にあり、外部曲率の値の増減を提供し、第一の不連続部の半径方向内側への第一の方向と、第一の不連続部と第二の不連続部との間の第二の方向と、第二の不連続部の半径方向外側への第三の方向とを有し、少なくとも一対の隣接する方向の間の方向の変化が−85°〜85°である溝
を含む研磨パッド。 - 各溝の少なくとも二つの不連続部が、その溝を、内側エッジ流れ制御セグメント、外側エッジ流れ制御セグメント及び内側エッジ流れ制御セグメントと外側エッジ流れ制御セグメントとの間に位置する少なくとも一つの中間流れ制御セグメントを有するように分割する、請求項1記載の研磨パッド。
- 内側エッジ流れ制御セグメントが第一の向き及び第一の曲率を有し、外側エッジ流れ制御セグメントが、それぞれ第一の向き及び第一の曲率と同じである第二の向き及び第二の曲率を有する、請求項2記載の研磨パッド。
- 第一及び第二の向きそれぞれが半径方向である、請求項3記載の研磨パッド。
- 第一及び第二の曲率それぞれがゼロである、請求項3記載の研磨パッド。
- 各溝が少なくとも三つの曲率不連続部を有し、少なくとも三つの不連続部の隣接する不連続部が互いに反対方向にある、請求項1記載の研磨パッド。
- 環状研磨トラックが、円形の内側境界と、幅だけ離間した円形の外側境界とを有し、溝それぞれが、内側境界と交差する内側エッジ流れ制御セグメントと、外側境界と交差する外側エッジ流れ制御セグメントとを有する、請求項1記載の研磨パッド。
- Nが数を表し、各溝がN個の不連続部を有し、N個の不連続部でN個の移行が起こり、N+1個の流れ制御セグメントがN個の移行と交互に位置し、N個の移行それぞれが、研磨トラックの幅を2Nで割ったもの以下の幅を有する、請求項1記載の研磨パッド。
- N個の移行部それぞれの幅が、研磨トラックの幅を4Nで割ったもの以下である、請求項8記載の研磨パッド。
- 研磨媒体の存在下で磁性基材、光学基材及び半導体基材の少なくとも一つを研磨する方法であって、
a)i)研磨媒体の存在下で磁性基材、光学基材及び半導体基材の少なくとも一つを研磨するように形成された研磨層であって、回転中心を有し、回転中心と同心であり、幅を有し、少なくとも三つの流れ制御ゾーンを有する環状研磨トラックを含む研磨層、ならびにii)研磨層に位置する複数の溝であって、それぞれが、環状研磨トラックの幅全体を横切り、環状研磨トラック内に少なくとも二つの不連続部を有する外部曲率を含み、少なくとも二つの不連続部が、互いに反対方向にあり、外部曲率の値の増減を提供し、第一の不連続部の半径方向内側への第一の方向と、第一の不連続部と第二の不連続部との間の第二の方向と、第二の不連続部の半径方向外側への第三の方向とを有し、少なくとも一対の隣接する方向の間の方向の変化が−85°〜85°である溝を含む研磨パッドを用いて研磨を実施することと、
b)少なくとも三つの流れ制御ゾーンそれぞれによって基材の除去速度を調節することと
を含む方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US3626305A | 2005-01-13 | 2005-01-13 | |
US11/036,263 | 2005-01-13 | ||
US11/134,580 US7131895B2 (en) | 2005-01-13 | 2005-05-20 | CMP pad having a radially alternating groove segment configuration |
US11/134,580 | 2005-05-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006192568A true JP2006192568A (ja) | 2006-07-27 |
JP5091410B2 JP5091410B2 (ja) | 2012-12-05 |
Family
ID=36609062
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006005756A Active JP5091410B2 (ja) | 2005-01-13 | 2006-01-13 | 半径方向に交互に位置する溝セグメント配置形態を有するcmpパッド |
Country Status (6)
Country | Link |
---|---|
US (1) | US7131895B2 (ja) |
JP (1) | JP5091410B2 (ja) |
KR (1) | KR101200426B1 (ja) |
DE (1) | DE102006000766A1 (ja) |
FR (1) | FR2880570B1 (ja) |
TW (1) | TWI363672B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011036979A (ja) * | 2009-08-18 | 2011-02-24 | Fujibo Holdings Inc | 研磨パッド |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7234224B1 (en) * | 2006-11-03 | 2007-06-26 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Curved grooving of polishing pads |
US7520798B2 (en) * | 2007-01-31 | 2009-04-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with grooves to reduce slurry consumption |
US7311590B1 (en) | 2007-01-31 | 2007-12-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with grooves to retain slurry on the pad texture |
TWI321503B (en) | 2007-06-15 | 2010-03-11 | Univ Nat Taiwan Science Tech | The analytical method of the effective polishing frequency and number of times towards the polishing pads having different grooves and profiles |
US9180570B2 (en) | 2008-03-14 | 2015-11-10 | Nexplanar Corporation | Grooved CMP pad |
US8057282B2 (en) * | 2008-12-23 | 2011-11-15 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate polishing method |
US8062103B2 (en) * | 2008-12-23 | 2011-11-22 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate groove pattern |
KR101232787B1 (ko) * | 2010-08-18 | 2013-02-13 | 주식회사 엘지화학 | 연마 시스템용 연마 패드 |
TWI492818B (zh) * | 2011-07-12 | 2015-07-21 | Iv Technologies Co Ltd | 研磨墊、研磨方法以及研磨系統 |
DE102011082777A1 (de) * | 2011-09-15 | 2012-02-09 | Siltronic Ag | Verfahren zum beidseitigen Polieren einer Halbleiterscheibe |
TWI599447B (zh) | 2013-10-18 | 2017-09-21 | 卡博特微電子公司 | 具有偏移同心溝槽圖樣之邊緣排除區的cmp拋光墊 |
TWI597125B (zh) | 2014-09-25 | 2017-09-01 | 三芳化學工業股份有限公司 | 拋光墊及其製造方法 |
CN110411344B (zh) * | 2019-08-06 | 2021-07-20 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 一种校准方法、校准装置、校准系统及电子设备 |
KR20210116759A (ko) * | 2020-03-13 | 2021-09-28 | 삼성전자주식회사 | Cmp 패드 및 이를 구비하는 화학적 기계적 연마 장치 |
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JPH0288178A (ja) * | 1988-05-09 | 1990-03-28 | Texas Instr Inc <Ti> | 半導体研磨用ラジアル・スポーク・パッド |
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JPH11216663A (ja) * | 1998-02-03 | 1999-08-10 | Sony Corp | 研磨パッド、研磨装置および研磨方法 |
JP2001291687A (ja) * | 1999-12-13 | 2001-10-19 | Applied Materials Inc | 研磨装置の領域にスラリを制御して送出する装置および方法 |
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-
2005
- 2005-05-20 US US11/134,580 patent/US7131895B2/en active Active
- 2005-12-23 KR KR1020050128980A patent/KR101200426B1/ko active IP Right Grant
-
2006
- 2006-01-04 DE DE102006000766A patent/DE102006000766A1/de not_active Ceased
- 2006-01-06 TW TW095100554A patent/TWI363672B/zh active
- 2006-01-13 FR FR0650123A patent/FR2880570B1/fr not_active Expired - Fee Related
- 2006-01-13 JP JP2006005756A patent/JP5091410B2/ja active Active
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JP2011036979A (ja) * | 2009-08-18 | 2011-02-24 | Fujibo Holdings Inc | 研磨パッド |
Also Published As
Publication number | Publication date |
---|---|
TWI363672B (en) | 2012-05-11 |
FR2880570B1 (fr) | 2014-06-20 |
DE102006000766A1 (de) | 2006-07-27 |
KR20060082786A (ko) | 2006-07-19 |
KR101200426B1 (ko) | 2012-11-12 |
TW200633814A (en) | 2006-10-01 |
US20060154574A1 (en) | 2006-07-13 |
US7131895B2 (en) | 2006-11-07 |
FR2880570A1 (fr) | 2006-07-14 |
JP5091410B2 (ja) | 2012-12-05 |
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