JP2006188412A - 合成シリカ粉末の処理方法及びそれで処理した合成シリカ粉末 - Google Patents
合成シリカ粉末の処理方法及びそれで処理した合成シリカ粉末 Download PDFInfo
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- JP2006188412A JP2006188412A JP2005341401A JP2005341401A JP2006188412A JP 2006188412 A JP2006188412 A JP 2006188412A JP 2005341401 A JP2005341401 A JP 2005341401A JP 2005341401 A JP2005341401 A JP 2005341401A JP 2006188412 A JP2006188412 A JP 2006188412A
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- silica powder
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 243
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 90
- 238000000034 method Methods 0.000 title claims abstract description 69
- 239000000843 powder Substances 0.000 title claims abstract description 68
- 230000008569 process Effects 0.000 title claims abstract description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 47
- 230000001590 oxidative effect Effects 0.000 claims abstract description 22
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 19
- 150000001875 compounds Chemical class 0.000 claims abstract description 12
- 239000007789 gas Substances 0.000 claims description 48
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052734 helium Inorganic materials 0.000 claims description 7
- 239000001307 helium Substances 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 238000000746 purification Methods 0.000 claims description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- 238000007670 refining Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 21
- 239000000356 contaminant Substances 0.000 abstract description 5
- 238000000465 moulding Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 2
- 230000004927 fusion Effects 0.000 abstract 1
- 239000010453 quartz Substances 0.000 description 20
- 239000004576 sand Substances 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 13
- 239000013078 crystal Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 8
- 239000002994 raw material Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 229910002027 silica gel Inorganic materials 0.000 description 5
- 239000000741 silica gel Substances 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 4
- 239000000499 gel Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000007858 starting material Substances 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000003980 solgel method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 1
- 229940005991 chloric acid Drugs 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000001246 colloidal dispersion Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000012476 oxidizable substance Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 229910021487 silica fume Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
- 229910021489 α-quartz Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C1/00—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels
- C03C1/02—Pretreated ingredients
- C03C1/022—Purification of silica sand or other minerals
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Silicon Compounds (AREA)
- Glass Melting And Manufacturing (AREA)
Abstract
【解決手段】 溶融成形に際して合成石英ガラスから製造される物品の気泡密度の低下及び安定性の向上を達成するため、炭素夾雑物を実質的に含まない合成石英ガラス粉末を製造する方法であって、酸化雰囲気(例えば、3vol%以上のオゾンを含む雰囲気)中において合成シリカ粉末を1400℃未満の温度に維持して炭素含有化合物を10ppm未満に低下させることを含んでなる方法。
【選択図】 図1
Description
Claims (13)
- 天然又は合成シリカ粉末の精製方法であって、酸化雰囲気中でシリカ粉末を1400℃未満の温度で処理してシリカ粉末中の炭素含有化合物濃度を10ppm未満に低下させることによる精製方法。
- 3vol%以上のオゾンを含む雰囲気中でシリカ粉末を1400℃未満の温度で処理してシリカ粉末中の炭素含有化合物濃度を10ppm未満に低下させる、請求項1記載の方法。
- 約5〜約20vol%以上のオゾンを含む雰囲気中でシリカ粉末を1400℃未満の温度で処理する、請求項1又は請求項2記載の方法。
- 3vol%以上のオゾンを含む雰囲気中でシリカ粉末を約500〜約1000℃の温度で約30分ないし15時間の範囲内の時間にわたり処理して、炭素残分を2ppm未満に低下させると共にOH基濃度を50ppm未満に低下させる、請求項1乃至請求項3のいずれか1項記載の方法。
- 20vol%以上の酸素を含む雰囲気中でシリカ粉末を1000℃未満の温度で処理してシリカ粉末中の炭素含有化合物濃度を10ppm未満に低下させる、請求項1記載の方法。
- 50vol%以上の酸素を含む雰囲気中でシリカ粉末を約500〜約1000℃の範囲内の温度で処理してシリカ粉末中の炭素含有化合物を5ppm未満に低下させる、請求項1及び5のいずれか1項記載の方法。
- 50vol%以上の酸素を含む雰囲気中でシリカ粉末を約500〜約1000℃の範囲内の温度で処理してシリカ粉末中の炭素含有化合物を5ppm未満に低下させる、請求項1、5及び6のいずれか1項記載の方法。
- 約500〜約1000℃の範囲内の熱空気からなる雰囲気中でシリカ粉末を処理して炭素含有化合物を5ppm未満に低下させる、請求項1記載の方法。
- シリカ粉末処理が流動床で実施され、酸化雰囲気は流動床及び処理すべきシリカ粉末を通して特定の流速でほぼ上方に流される処理ガスの形態を取り、流動床の温度は約500〜約1000℃の範囲内の処理温度に維持される、請求項1乃至請求項8のいずれか1項記載の方法。
- 処理ガスは流動床への導入前に処理温度を超える温度に加熱されると共に、処理ガスは10cm/sの以上の流速を有する、請求項1乃至請求項9のいずれか1項記載の方法。
- 45ppm以上の炭素含有量を有する天然又は合成シリカの精製方法であって、60vol%の酸素又は3vol%のオゾンの少なくとも一方を含む酸化雰囲気の下でシリカ粉末を1000℃未満の温度に維持することで、炭素含有化合物をガス状態で追い出して炭素含有量を5ppm未満のレベルに低下させることによる精製方法。
- 45ppm以上の炭素含有量を有する天然又は合成シリカ粉末の精製方法であって、3〜10vol%のオゾン、50〜75vol%のヘリウム及び20〜40vol%の酸素を含む酸化雰囲気の下でシリカ粉末を200〜1400℃の温度に2〜24時間維持することで、炭素含有化合物をガス状態で追い出して炭素含有量を5ppm未満のレベルに低下させることによる精製方法。
- 45ppm以上の炭素含有量を有する天然又は合成シリカ粉末の精製方法であって、十分な量のオゾンを含むガス流により前記シリカ粉末を1400℃未満の温度で処理して炭素含有量を5ppm未満のレベルに低下させることを含んでなる方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US63970304P | 2004-12-28 | 2004-12-28 | |
US60/639,703 | 2004-12-28 | ||
US11/266,575 | 2005-11-02 | ||
US11/266,575 US7452518B2 (en) | 2004-12-28 | 2005-11-02 | Process for treating synthetic silica powder and synthetic silica powder treated thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006188412A true JP2006188412A (ja) | 2006-07-20 |
JP5177950B2 JP5177950B2 (ja) | 2013-04-10 |
Family
ID=36585755
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005341401A Active JP5177950B2 (ja) | 2004-12-28 | 2005-11-28 | 合成シリカ粉末の処理方法及びそれで処理した合成シリカ粉末 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7452518B2 (ja) |
JP (1) | JP5177950B2 (ja) |
KR (1) | KR20060092996A (ja) |
CN (1) | CN1817792B (ja) |
DE (1) | DE102005057219A1 (ja) |
FR (1) | FR2880013B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015020916A (ja) * | 2013-07-16 | 2015-02-02 | ケイ・エス・ティ・ワ−ルド株式会社 | 高純度合成シリカ粉末の製造方法 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006022303B4 (de) * | 2006-05-11 | 2009-06-18 | Heraeus Quarzglas Gmbh & Co. Kg | Verfahren zur Herstellung von synthetischem Quarzglas mit vorgegebenem Hydroxylgruppengehalt |
US20120288716A1 (en) * | 2010-01-07 | 2012-11-15 | Mitsubishi Materials Corporation | Synthetic amorphous silica powder |
US8197782B2 (en) * | 2010-02-08 | 2012-06-12 | Momentive Performance Materials | Method for making high purity metal oxide particles and materials made thereof |
US9249028B2 (en) | 2010-02-08 | 2016-02-02 | Momentive Performance Materials Inc. | Method for making high purity metal oxide particles and materials made thereof |
US10494291B2 (en) * | 2014-10-23 | 2019-12-03 | Corning Incorporated | Hygroscopic additives for silica soot compacts and methods for forming optical quality glass |
US10793466B2 (en) | 2015-02-27 | 2020-10-06 | Corning Incorporated | Nanoparticle additives for silica soot compacts and methods for strengthening silica soot compacts |
EP3390303B1 (de) | 2015-12-18 | 2024-02-07 | Heraeus Quarzglas GmbH & Co. KG | Herstellung von quarzglaskörpern mit taupunktkontrolle im schmelzofen |
TWI794149B (zh) | 2015-12-18 | 2023-03-01 | 德商何瑞斯廓格拉斯公司 | 石英玻璃粉粒、不透明成型體及彼等之製備方法 |
TWI840318B (zh) | 2015-12-18 | 2024-05-01 | 德商何瑞斯廓格拉斯公司 | 石英玻璃體、光導、施照體、成型體及製備彼等之方法及矽組分之用途 |
EP3390296B1 (de) | 2015-12-18 | 2024-09-04 | Heraeus Quarzglas GmbH & Co. KG | Herstellung eines quarzglaskörpers in einem mehrkammerofen |
KR20180095622A (ko) | 2015-12-18 | 2018-08-27 | 헤래우스 크바르츠글라스 게엠베하 & 컴파니 케이지 | 내화성 금속으로 제조된 용융 도가니에서 실리카 유리 제품의 제조 |
EP3390290B1 (de) | 2015-12-18 | 2023-03-15 | Heraeus Quarzglas GmbH & Co. KG | Herstellung eines opaken quarzglaskörpers |
TWI808933B (zh) | 2015-12-18 | 2023-07-21 | 德商何瑞斯廓格拉斯公司 | 石英玻璃體、二氧化矽顆粒、光導、施照體、及成型體及其製備方法 |
TWI764879B (zh) * | 2015-12-18 | 2022-05-21 | 德商何瑞斯廓格拉斯公司 | 降低二氧化矽顆粒之碳含量及石英玻璃體之製備 |
KR20180095879A (ko) | 2015-12-18 | 2018-08-28 | 헤래우스 크바르츠글라스 게엠베하 & 컴파니 케이지 | 상승된 온도에서 탄소-도핑된 실리카 과립을 처리하여 실리카 과립의 알칼리 토금속 함량의 감소 |
US11492285B2 (en) | 2015-12-18 | 2022-11-08 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of quartz glass bodies from silicon dioxide granulate |
EP3390308B1 (de) | 2015-12-18 | 2024-08-28 | Heraeus Quarzglas GmbH & Co. KG | Glasfasern aus quarzglas mit geringem oh-, cl- und al-gehalt |
CA3149171A1 (en) | 2019-08-29 | 2021-03-04 | Gregory Kenneth BEDFORD | Ultra-white silica-based filler |
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JPH08301615A (ja) * | 1995-04-28 | 1996-11-19 | Mitsubishi Chem Corp | 合成石英粉の製造方法及び石英ガラス成形体の製造方法 |
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JPH11139835A (ja) * | 1997-11-05 | 1999-05-25 | Mitsubishi Chemical Corp | 合成石英の製造方法 |
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JPS5858292B2 (ja) * | 1980-01-21 | 1983-12-24 | 株式会社日立製作所 | シリカガラスの製造方法 |
JP3304131B2 (ja) | 1992-07-21 | 2002-07-22 | ジャパンスーパークォーツ株式会社 | 石英粉の脱水方法 |
JPH072513A (ja) * | 1993-06-15 | 1995-01-06 | Kimmon Mfg Co Ltd | 合成石英ガラス粉の製造方法 |
DE19921059A1 (de) * | 1999-05-07 | 2000-11-16 | Heraeus Quarzglas | Verfahren zum Reinigen von Si0¶2¶-Partikeln, Vorrichtung zur Durchführung des Verfahrens, und nach dem Verfahren hergestellte Körnung |
JP4117641B2 (ja) * | 2001-11-26 | 2008-07-16 | ジャパンスーパークォーツ株式会社 | 合成石英粉の処理方法およびその石英ガラス製品 |
FR2835205B1 (fr) * | 2002-01-25 | 2007-02-16 | Saint Gobain | Traitement de pollution organique sur un substrat inorganique |
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2005
- 2005-11-02 US US11/266,575 patent/US7452518B2/en active Active
- 2005-11-28 JP JP2005341401A patent/JP5177950B2/ja active Active
- 2005-11-29 KR KR1020050114664A patent/KR20060092996A/ko not_active Application Discontinuation
- 2005-11-29 DE DE102005057219A patent/DE102005057219A1/de not_active Ceased
- 2005-11-30 FR FR0512154A patent/FR2880013B1/fr active Active
- 2005-12-28 CN CN2005101377735A patent/CN1817792B/zh active Active
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JPH02221111A (ja) * | 1986-09-10 | 1990-09-04 | Dresser Ind Inc | 純粋なシリカ粉末の製造法 |
JPH08301615A (ja) * | 1995-04-28 | 1996-11-19 | Mitsubishi Chem Corp | 合成石英粉の製造方法及び石英ガラス成形体の製造方法 |
JPH08301614A (ja) * | 1995-04-28 | 1996-11-19 | Mitsubishi Chem Corp | 合成石英粉の製造方法及び石英ガラス成形体の製造方法 |
JPH11139835A (ja) * | 1997-11-05 | 1999-05-25 | Mitsubishi Chemical Corp | 合成石英の製造方法 |
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JP2015020916A (ja) * | 2013-07-16 | 2015-02-02 | ケイ・エス・ティ・ワ−ルド株式会社 | 高純度合成シリカ粉末の製造方法 |
Also Published As
Publication number | Publication date |
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FR2880013A1 (fr) | 2006-06-30 |
US7452518B2 (en) | 2008-11-18 |
CN1817792A (zh) | 2006-08-16 |
DE102005057219A1 (de) | 2006-07-13 |
CN1817792B (zh) | 2013-02-06 |
JP5177950B2 (ja) | 2013-04-10 |
KR20060092996A (ko) | 2006-08-23 |
US20060137400A1 (en) | 2006-06-29 |
FR2880013B1 (fr) | 2009-10-30 |
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