JP2006176385A - 前駆体組成物、前駆体組成物の製造方法、インクジェット塗布用インク、強誘電体膜の製造方法、圧電素子、半導体装置、圧電アクチュエータ、インクジェット式記録ヘッド、およびインクジェットプリンタ - Google Patents
前駆体組成物、前駆体組成物の製造方法、インクジェット塗布用インク、強誘電体膜の製造方法、圧電素子、半導体装置、圧電アクチュエータ、インクジェット式記録ヘッド、およびインクジェットプリンタ Download PDFInfo
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- JP2006176385A JP2006176385A JP2004373797A JP2004373797A JP2006176385A JP 2006176385 A JP2006176385 A JP 2006176385A JP 2004373797 A JP2004373797 A JP 2004373797A JP 2004373797 A JP2004373797 A JP 2004373797A JP 2006176385 A JP2006176385 A JP 2006176385A
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- polycarboxylic acid
- ferroelectric
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- 239000000203 mixture Substances 0.000 title claims abstract description 97
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 62
- 239000004065 semiconductor Substances 0.000 title claims description 18
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 70
- 150000002148 esters Chemical class 0.000 claims abstract description 49
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 238000009835 boiling Methods 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 31
- 239000003960 organic solvent Substances 0.000 claims abstract description 24
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 17
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 16
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 16
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 7
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 7
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 7
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 6
- 239000002253 acid Substances 0.000 claims description 96
- 239000002994 raw material Substances 0.000 claims description 70
- 238000000576 coating method Methods 0.000 claims description 37
- 150000004703 alkoxides Chemical class 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims description 21
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 19
- 238000005886 esterification reaction Methods 0.000 claims description 16
- 230000032050 esterification Effects 0.000 claims description 13
- 150000007942 carboxylates Chemical class 0.000 claims description 10
- 229910052732 germanium Inorganic materials 0.000 claims description 9
- 230000007062 hydrolysis Effects 0.000 claims description 9
- 238000006460 hydrolysis reaction Methods 0.000 claims description 9
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- 150000002902 organometallic compounds Chemical class 0.000 claims description 5
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical class OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 3
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- 238000007599 discharging Methods 0.000 claims description 3
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- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 4
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- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 4
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- 125000003158 alcohol group Chemical group 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 3
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- 241000877463 Lanio Species 0.000 description 2
- JKRZOJADNVOXPM-UHFFFAOYSA-N Oxalic acid dibutyl ester Chemical compound CCCCOC(=O)C(=O)OCCCC JKRZOJADNVOXPM-UHFFFAOYSA-N 0.000 description 2
- ZFOZVQLOBQUTQQ-UHFFFAOYSA-N Tributyl citrate Chemical compound CCCCOC(=O)CC(O)(C(=O)OCCCC)CC(=O)OCCCC ZFOZVQLOBQUTQQ-UHFFFAOYSA-N 0.000 description 2
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- LDCRTTXIJACKKU-ARJAWSKDSA-N dimethyl maleate Chemical compound COC(=O)\C=C/C(=O)OC LDCRTTXIJACKKU-ARJAWSKDSA-N 0.000 description 2
- BEPAFCGSDWSTEL-UHFFFAOYSA-N dimethyl malonate Chemical compound COC(=O)CC(=O)OC BEPAFCGSDWSTEL-UHFFFAOYSA-N 0.000 description 2
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- JYVLIDXNZAXMDK-UHFFFAOYSA-N pentan-2-ol Chemical compound CCCC(C)O JYVLIDXNZAXMDK-UHFFFAOYSA-N 0.000 description 2
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- 238000005245 sintering Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000001384 succinic acid Substances 0.000 description 2
- 150000005846 sugar alcohols Polymers 0.000 description 2
- MJHNUUNSCNRGJE-UHFFFAOYSA-N trimethyl benzene-1,2,4-tricarboxylate Chemical compound COC(=O)C1=CC=C(C(=O)OC)C(C(=O)OC)=C1 MJHNUUNSCNRGJE-UHFFFAOYSA-N 0.000 description 2
- 238000000018 DNA microarray Methods 0.000 description 1
- DKMROQRQHGEIOW-UHFFFAOYSA-N Diethyl succinate Chemical compound CCOC(=O)CCC(=O)OCC DKMROQRQHGEIOW-UHFFFAOYSA-N 0.000 description 1
- UDSFAEKRVUSQDD-UHFFFAOYSA-N Dimethyl adipate Chemical compound COC(=O)CCCCC(=O)OC UDSFAEKRVUSQDD-UHFFFAOYSA-N 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
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- 238000001354 calcination Methods 0.000 description 1
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- 230000003197 catalytic effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical group [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- WOSVXXBNNCUXMT-UHFFFAOYSA-N cyclopentane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(O)=O)C(C(O)=O)C1C(O)=O WOSVXXBNNCUXMT-UHFFFAOYSA-N 0.000 description 1
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- 238000001514 detection method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- IEPRKVQEAMIZSS-AATRIKPKSA-N diethyl fumarate Chemical compound CCOC(=O)\C=C\C(=O)OCC IEPRKVQEAMIZSS-AATRIKPKSA-N 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
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- 235000011187 glycerol Nutrition 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229920000831 ionic polymer Polymers 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
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- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- KPSSIOMAKSHJJG-UHFFFAOYSA-N neopentyl alcohol Chemical compound CC(C)(C)CO KPSSIOMAKSHJJG-UHFFFAOYSA-N 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
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- 238000005096 rolling process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- UQSBVZIXVVORQC-UHFFFAOYSA-N tetraethyl ethane-1,1,2,2-tetracarboxylate Chemical compound CCOC(=O)C(C(=O)OCC)C(C(=O)OCC)C(=O)OCC UQSBVZIXVVORQC-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- GTZCVFVGUGFEME-HNQUOIGGSA-N trans-aconitic acid Chemical compound OC(=O)C\C(C(O)=O)=C/C(O)=O GTZCVFVGUGFEME-HNQUOIGGSA-N 0.000 description 1
- GTZCVFVGUGFEME-UHFFFAOYSA-N trans-aconitic acid Natural products OC(=O)CC(C(O)=O)=CC(O)=O GTZCVFVGUGFEME-UHFFFAOYSA-N 0.000 description 1
- TVWZLLYAJDSSCJ-UHFFFAOYSA-N triethyl ethane-1,1,2-tricarboxylate Chemical compound CCOC(=O)CC(C(=O)OCC)C(=O)OCC TVWZLLYAJDSSCJ-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G33/00—Compounds of niobium
- C01G33/006—Compounds containing, besides niobium, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G35/00—Compounds of tantalum
- C01G35/006—Compounds containing, besides tantalum, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
- C04B35/491—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT
- C04B35/493—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT containing also other lead compounds
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
- C04B35/497—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates based on solid solutions with lead oxides
- C04B35/499—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates based on solid solutions with lead oxides containing also titanates
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Abstract
【解決手段】 強誘電体を形成するための前駆体を含む前駆体組成物であって、前記強誘電体は、一般式AB1−xCxO3で示され、A元素は少なくともPbからなり、B元素はZr、Ti、V、WおよびHfの少なくとも一つからなり、C元素は、NbおよびTaの少なくとも一つからなり、前記前駆体は、少なくとも前記B元素およびC元素を含み、かつ一部にエステル結合を有し、前記前駆体は、有機溶媒に溶解もしくは分散され、前記有機溶媒は、少なくとも、第1のアルコールと、該第1のアルコールより沸点および粘度の高い第2のアルコールとを含む。
【選択図】 なし
Description
強誘電体を形成するための前駆体を含む前駆体組成物であって、
前記強誘電体は、一般式AB1−xCxO3で示され、
A元素は少なくともPbからなり、
B元素はZr、Ti、V、WおよびHfの少なくとも一つからなり、
C元素は、NbおよびTaの少なくとも一つからなり、
前記前駆体は、少なくとも前記B元素およびC元素を含み、かつ一部にエステル結合を有し、
前記前駆体は、有機溶媒に溶解もしくは分散され、
前記有機溶媒は、少なくとも、第1のアルコールと、該第1のアルコールより沸点および粘度の高い第2のアルコールとを含む。
前記C元素は、Nbであることができる。
強誘電体を形成するための前駆体を含む前駆体組成物の製造方法であって、
前記強誘電体は、一般式AB1−xCxO3で示され、A元素は少なくともPbからなり、B元素はZr、Ti、V、WおよびHfの少なくとも一つからなり、C元素は、NbおよびTaの少なくとも一つからなり、
少なくとも前記B元素および前記C元素を含むゾルゲル原料であって、金属アルコキシドの加水分解・縮合物を含むゾルゲル原料と、ポリカルボン酸またはポリカルボン酸エステルと、少なくとも、第1のアルコールと該第1のアルコールより沸点および粘度の高い第2のアルコールとを含む有機溶媒とを混合し、
前記ポリカルボン酸または前記ポリカルボン酸エステルに由来するポリカルボン酸と金属アルコキシドとのエステル化によるエステル結合を有する前駆体を形成することを含む。
本実施形態にかかる前駆体組成物は、強誘電体の成膜に用いられる。ここで、強誘電体は、一般式AB1−xCxO3で示され、A元素は少なくともPbからなり、B元素はZr、Ti、V、WおよびHfの少なくとも一つからなり、C元素は、NbおよびTaの少なくとも一つからなることができる。そして、本実施形態では、前駆体は、少なくともB元素およびC元素を含み、かつ一部にエステル結合を有する。さらに、本実施形態の前駆体は、有機溶媒に溶解もしくは分散され、前記有機溶媒は、少なくとも、第1のアルコールと、該第1のアルコールより沸点および粘度の高い第2のアルコールとを含む。
プロパノール(プロピルアルコール)として、OLE_LINK11−プロパノールOLE_LINK1(沸点97.4℃)、2−プロパノール(沸点82.7℃,粘度2.43cp(/20℃))、
ブタノール(ブチルアルコール)として、1−ブタノール(沸点117℃,粘度2.95cp(/20℃))、2−ブタノール(沸点100℃,粘度4.21cp(/20℃))、2−メチル−1−プロパノール(沸点108℃,粘度4.0cp(/20℃))、2−メチル−2−プロパノール(融点25.4℃,沸点83℃,粘度3.35cp(/20℃))、
ペンタノール(アミルアルコール)として、1−OLE_LINK2ペンタノールOLE_LINK2(沸点137℃,粘度3.31cp)、3−メチル−1−ブタノール(沸点131℃,粘度4.2cp(/20℃))、2−メチル−1−ブタノール(沸点128℃,粘度5.09cp(/20℃))、2,2ジメチル−1−プロパノール(沸点113℃,)、2−ペンタノール(沸点119℃,)、3−メチル−2−ブタノール(沸点112.5℃,粘度4.2cp(/20℃))、3−ペンタノール(沸点117℃,粘度4.12cp(/20℃))、2−メチル−2−ブタノール(沸点102℃,粘度3.70cp(/20℃))、
ノニルアルコールとして、n−ノニルアルコール(沸点213℃,粘度14.3cp(/20℃))、
その他の1価のアルコールとして、2−(2メトキシエトキシ)−エタノール(沸点194℃,粘度3.5cp(/20℃))、
多価アルコール類;
エチレングリコール(融点−11.5℃,沸点197.5℃,粘度25.66cp(/20℃))、グリセリン(融点17℃,沸点290℃,粘度1412cp(/20℃))。
本実施形態にかかる前駆体組成物の製造方法は、一般式AB1−xCxO3で示され、A元素は少なくともPbからなり、B元素はZr、Ti、V、WおよびHfの少なくとも一つからなり、C元素は、NbおよびTaの少なくとも一つからなる強誘電体の形成に用いることができる。本実施形態の製造方法は、少なくとも前記B元素および前記C元素を含むゾルゲル原料であって、金属アルコキシドの加水分解・縮合物を含むゾルゲル原料と、ポリカルボン酸またはポリカルボン酸エステルと、少なくとも、第1のアルコールと該第1のアルコールより沸点および粘度の高い第2のアルコールとを含む有機溶媒とを混合し、前記ポリカルボン酸または前記ポリカルボン酸エステルに由来するポリカルボン酸と金属アルコキシドとのエステル化によるエステル結合を有する前駆体を形成することを含む。
本実施形態にかかる強誘電体膜の製造方法は、上述した本実施形態にかかる前駆体組成物を、インクジェット塗布法によって白金系金属からなる金属膜上に吐出して塗布した後、塗膜を熱処理することを含む。白金系金属は、エステル化に対して良好な酸性触媒作用を有するので、強誘電体膜の結晶化をより良好にすることができる。白金系金属としては、PtおよびIrの少なくとも一方であることができる。白金系金属の代わりに、SrRuO3やLaNiO3などのペロブスカイト型電極材料を用いることもできる。この製造方法によれば、インクジェット塗布法を用いた簡易な方法によって特性のよい強誘電体膜を得ることができる。
以下、本発明の実施例について説明する。
(実施例1)
本実施例では、インクジェット塗布法に用いられるPZTN原料溶液(インクジェット塗布用インク)の作成方法ならびにこのPZTN溶液を用いてインクジェット塗布法によりPZTN膜を形成する方法について述べる。
本実施例のPZTN膜サンプルのXRDパターンを図6に示す。図6から、本実施例のPZTNは、正方晶であり、(111)配向していることが確認された。図6には、焼成温度を700℃としたサンプルの結果も併せて示した。
本実施例のPZTN膜サンプルのヒステリシスを図7に示す。図7から、本実施例のPZTN膜は良好なヒステリシス特性を有することが確認された。
図8は、PZTN膜の断面モフォロジーを示すSEMの映像であり、図9は、PZTN膜の表面モフォロジーを示すSEMの映像である。図8および図9から、本実施例のPZTN膜は、スピンコートによって形成された膜と全く遜色ない膜、すなわち、均一な膜厚と、緻密で平滑な表面を有することが確認された。
図10は、電圧と吐出速度との関係を示し、図11は、電圧と吐出インク量との関係を示す。
図12は、インクジェットヘッドから吐出されたサンプル溶液を示す図である。図12から、本実施例のサンプル溶液が良好な吐出性を有することが確認された。
図13は、本実施例のサンプル溶液を用いて、インクジェット塗布して得られた膜の改行ムラを示す。改行ムラとは、インクジェット塗布法により形成された膜(ドット)のエッジ部の盛り上がりにより形成される、いわゆる“コーヒーのしみ現象”をいう。
図14(A),(B)に、本実施例および比較例のサンプル溶液を用いて、インクジェット塗布法によって得られたドットの形状を模式的に示す。図14(A)は、実施例1のサンプル溶液を用いて上述したインクジェット塗布条件で得られた1ドットの形状を模式的に示す。図14(B)は、実施例1において、アルコール溶媒として、n−ブタノールを単独で用いた以外は実施例1と同様にして得られた比較例の1ドットの形状を示す。
次に、本実施形態の原料溶液を用いて形成された強誘電体膜を含む半導体素子について説明する。本実施形態では、半導体素子の一例である強誘電体キャパシタを含む強誘電体メモリ装置を例に挙げて説明する。
次に、本実施形態の原料溶液を用いて形成された強誘電体膜を圧電素子に適用した例について説明する。
次に、上述の圧電素子が圧電アクチュエータとして機能しているインクジェット式記録ヘッドおよびこのインクジェット式記録ヘッドを有するインクジェットプリンタについて説明する。以下の説明では、インクジェット式記録ヘッドについて説明した後に、インクジェットプリンタについて説明する。図19は、本実施形態に係るインクジェット式記録ヘッドの概略構成を示す側断面図であり、図20は、このインクジェット式記録ヘッドの分解斜視図であり、通常使用される状態とは上下逆に示したものである。なお、図21には、本実施形態に係るインクジェット式記録ヘッドを有するインクジェットプリンタ700を示す。
図19に示すように、インクジェット式記録ヘッド50は、ヘッド本体(基体)57と、ヘッド本体57上に形成される圧電部54と、を含む。圧電部54には図18に示す圧電素子1が設けられ、圧電素子1は、下部電極3、圧電体膜(強誘電体膜)4および上部電極5が順に積層して構成されている。圧電体膜4は、1.の項で述べた原料溶液を用いて形成された膜である。インクジェット式記録ヘッドにおいて、圧電部54は、圧電アクチュエータとして機能する。
Claims (28)
- 強誘電体を形成するための前駆体を含む前駆体組成物であって、
前記強誘電体は、一般式AB1−xCxO3で示され、
A元素は少なくともPbからなり、
B元素はZr、Ti、V、WおよびHfの少なくとも一つからなり、
C元素は、NbおよびTaの少なくとも一つからなり、
前記前駆体は、少なくとも前記B元素およびC元素を含み、かつ一部にエステル結合を有し、
前記前駆体は、有機溶媒に溶解もしくは分散され、
前記有機溶媒は、少なくとも、第1のアルコールと、該第1のアルコールより沸点および粘度の高い第2のアルコールとを含む、前駆体組成物。 - 請求項1において、
前記B元素は、ZrおよびTiであり、
前記C元素は、Nbである、前駆体組成物。 - 請求項1または2において、
前記前駆体は、さらに前記A元素を含む、前駆体組成物。 - 請求項1ないし3のいずれかにおいて、
前記強誘電体は、0.05≦x<1の範囲でNbを含む、前駆体組成物。 - 請求項4において、
前記強誘電体は、0.1≦x≦0.3の範囲でNbを含む、前駆体組成物。 - 請求項1ないし3のいずれかにおいて、
前記強誘電体は、0.05≦x<1の範囲でTaを含む、前駆体組成物。 - 請求項1ないし6のいずれかにおいて、
さらに、前記強誘電体は、0.5モル%以上のSi、あるいはSiおよびGeを含む、前駆体組成物。 - 請求項7において、
前記強誘電体は、0.5〜5モル%のSi、あるいはSiおよびGeを含む、前駆体組成物。 - 強誘電体を形成するための前駆体を含む前駆体組成物の製造方法であって、
前記強誘電体は、一般式AB1−xCxO3で示され、A元素は少なくともPbからなり、B元素はZr、Ti、V、WおよびHfの少なくとも一つからなり、C元素は、NbおよびTaの少なくとも一つからなり、
少なくとも前記B元素および前記C元素を含むゾルゲル原料であって、金属アルコキシドの加水分解・縮合物を含むゾルゲル原料と、ポリカルボン酸またはポリカルボン酸エステルと、少なくとも、第1のアルコールと該第1のアルコールより沸点および粘度の高い第2のアルコールとを含む有機溶媒とを混合し、
前記ポリカルボン酸または前記ポリカルボン酸エステルに由来するポリカルボン酸と金属アルコキシドとのエステル化によるエステル結合を有する前駆体を形成することを含む、前駆体組成物の製造方法。 - 請求項9において、
前記B元素は、ZrおよびTiであり、
前記C元素は、Nbである、前駆体組成物の製造方法。 - 請求項9または10において、
前記ポリカルボン酸または前記ポリカルボン酸エステルは、2価のカルボン酸またはカルボン酸エステルである、前駆体組成物の製造方法。 - 請求項11において、
前記2価のカルボン酸エステルは、コハク酸エステル、マレイン酸エステルおよびマロン酸エステルから選択される少なくとも1種である、前駆体組成物の製造方法。 - 請求項9ないし12のいずれかにおいて、
前記ポリカルボン酸エステルの分子量は、150以下である、前駆体組成物の製造方法。 - 請求項9ないし13のいずれかにおいて、
前記ゾルゲル原料と、前記ポリカルボン酸またはポリカルボン酸エステルと、前記有機溶媒とを混合する際に、さらに金属カルボン酸塩を用いたゾルゲル原料を含む、前駆体組成物の製造方法。 - 請求項14において、
前記金属カルボン酸塩は、鉛のカルボン酸塩である、前駆体組成物の製造方法。 - 請求項9ないし15のいずれかにおいて、
前記ゾルゲル原料と、前記ポリカルボン酸またはポリカルボン酸エステルと、前記有機溶媒とを混合する際に、さらに有機金属化合物を含む、前駆体組成物の製造方法。 - 請求項9ないし16のいずれかにおいて、
前記ゾルゲル原料と、前記ポリカルボン酸またはポリカルボン酸エステルと、前記有機溶媒とを混合する際に、さらにSi、あるいはSiおよびGeを含むゾルゲル原料を用いる、前駆体組成物の製造方法。 - 請求項9ないし17のいずれかにおいて、
前記ゾルゲル溶液として、少なくともPbZrO3用ゾルゲル溶液、PbTiO3用ゾルゲル溶液、およびPbNbO3用ゾルゲル溶液を混合したものを用いる、前駆体組成物の製造方法。 - 請求項9ないし17のいずれかにおいて、
前記ゾルゲル溶液として、少なくともPbZrO3用ゾルゲル溶液、PbTiO3用ゾルゲル溶液、およびPbTaO3用ゾルゲル溶液を混合したものを用いる、前駆体組成物の製造方法。 - 請求項18または19において、
ゾルゲル溶液として、さらにPbSiO3用ゾルゲル溶液を混合したものを用いる、前駆体組成物の製造方法。 - 請求項1ないし8のいずれかに記載の前駆体組成物を用いたインクジェット塗布用インク。
- 請求項21に記載のインクジェット塗布用インクを、ヘッドから吐出して導電膜上に塗布した後、熱処理することを含む、強誘電体膜の製造方法。
- 請求項22において、
前記導電膜は、白金系金属からなる、強誘電体膜の製造方法。 - 請求項22に記載の製造方法を用いて形成された強誘電体膜を含む、圧電素子。
- 請求項22に記載の製造方法を用いて形成された強誘電体膜を含む、半導体装置。
- 請求項24に記載の圧電素子を含む、圧電アクチュエータ。
- 請求項26に記載の圧電アクチュエータを含む、インクジェット式記録ヘッド。
- 請求項27に記載のインクジェット式記録ヘッドを含む、インクジェットプリンタ。
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US11/312,971 US7713348B2 (en) | 2004-12-24 | 2005-12-20 | Precursor composition, method of manufacturing precursor composition, inkjet coating ink, method of manufacturing ferroelectric film, piezoelectric device, semiconductor device, piezoelectric actuator, inkjet recording head, and inkjet printer |
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KR20050128489A KR100720630B1 (ko) | 2004-12-24 | 2005-12-23 | 전구체 조성물, 잉크젯 도포용 잉크, 강유전체 막의 제조 방법, 압전 소자, 반도체 장치, 압전 액튜에이터, 잉크젯식 기록 헤드, 및 잉크젯 프린터 |
TW094146378A TW200640705A (en) | 2004-12-24 | 2005-12-23 | Precursor composition, method of manufacturing precursor composition, inkjet coating ink, method of manufacturing ferroelectric film, piezoelectric device, semiconductor device, piezoelectric actuator, inkjet recording head, and inkjet printer |
CNB2005101341131A CN100390100C (zh) | 2004-12-24 | 2005-12-26 | 前驱体组合物及其制造方法、喷墨涂布用墨液 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009252786A (ja) * | 2008-04-01 | 2009-10-29 | Seiko Epson Corp | 酸化物原料溶液、酸化物膜、圧電素子、酸化物膜の形成方法および圧電素子の製造方法 |
WO2011089748A1 (ja) * | 2010-01-21 | 2011-07-28 | 株式会社ユーテック | Pbnzt強誘電体膜、ゾルゲル溶液、成膜方法及び強誘電体膜の製造方法 |
JP2011155204A (ja) * | 2010-01-28 | 2011-08-11 | Ricoh Co Ltd | ゾルゲル液、電気−機械変換素子、液体吐出ヘッド及びインクジェット記録装置 |
JP2014154610A (ja) * | 2013-02-06 | 2014-08-25 | Ricoh Co Ltd | 薄膜製造方法、電気機械変換素子、液滴吐出ヘッド、及びインクジェット記録装置 |
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Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04506791A (ja) * | 1989-04-21 | 1992-11-26 | アルキャン インターナショナル リミテッド | ゾル・ゲル処理による薄膜セラミックの製造 |
JPH0769645A (ja) * | 1993-08-27 | 1995-03-14 | Murata Mfg Co Ltd | 鉛含有複合酸化物の製造方法 |
JPH0790594A (ja) * | 1993-09-24 | 1995-04-04 | Tokyo Ohka Kogyo Co Ltd | チタン系複合酸化物形成用塗布液 |
JPH07252664A (ja) * | 1994-03-14 | 1995-10-03 | Texas Instr Japan Ltd | ゾルーゲル法による強誘電体膜の形成方法、キャパシタの製造方法、その原料溶液の調製方法及びその原料溶液 |
JPH10226519A (ja) * | 1997-02-07 | 1998-08-25 | Nec Corp | 塗布法による酸化物薄膜の製造方法 |
US5908802A (en) * | 1997-10-30 | 1999-06-01 | Sandia Corporation | Nonaqueous solution synthesis process for preparing oxide powders of lead zirconate titanate and related materials |
JP2001158607A (ja) * | 1999-12-02 | 2001-06-12 | Seiko Epson Corp | 酸化物薄膜の製造方法、メモリ素子の製造方法及び圧電体素子の製造方法並びにこれらの製造方法により製造される酸化物薄膜、メモリ素子及び圧電体素子 |
JP2001213625A (ja) * | 2000-01-27 | 2001-08-07 | Seiko Epson Corp | チタン酸ジルコン酸鉛薄膜の製造方法及びそれを用いた薄膜デバイス |
JP2001279464A (ja) * | 2000-03-29 | 2001-10-10 | Seiko Epson Corp | 強誘電体薄膜の作製方法 |
JP2003002647A (ja) * | 2000-12-27 | 2003-01-08 | Mitsubishi Materials Corp | Plzt強誘電体薄膜、その形成用組成物及び形成方法 |
JP2003311196A (ja) * | 2002-04-19 | 2003-11-05 | Seiko Epson Corp | 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、非接触型カード媒体、圧電体素子、並びにインクジェット式記録ヘッド |
WO2004038733A1 (ja) * | 2002-10-24 | 2004-05-06 | Seiko Epson Corporation | 強誘電体膜、強誘電体キャパシタ、強誘電体メモリ、圧電素子、半導体素子、強誘電体膜の製造方法、及び強誘電体キャパシタの製造方法 |
JP2004235553A (ja) * | 2003-01-31 | 2004-08-19 | Canon Inc | 圧電体膜成膜用支持基板、圧電体素子、インクジェット記録ヘッド |
JP2004277200A (ja) * | 2003-03-13 | 2004-10-07 | Seiko Epson Corp | 強誘電体薄膜並びに強誘電体薄膜製造方法 |
JP2004299921A (ja) * | 2003-03-28 | 2004-10-28 | Seiko Epson Corp | 塗布用セラミックス材料およびその製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MY104020A (en) * | 1988-05-27 | 1993-10-30 | Mitsui Chemicals Inc | Ferroelectric ceramic material. |
US5894064A (en) * | 1995-03-13 | 1999-04-13 | Hampden-Smith; Mark | Solution routes to metal oxide films through ester elimination reactions |
US6500489B1 (en) * | 1996-11-27 | 2002-12-31 | Advanced Technology Materials, Inc. | Low temperature CVD processes for preparing ferroelectric films using Bi alcoxides |
US7094284B2 (en) * | 1999-10-07 | 2006-08-22 | Advanced Technology Materials, Inc. | Source reagent compositions for CVD formation of high dielectric constant and ferroelectric metal oxide thin films and method of using same |
JP4709544B2 (ja) * | 2004-05-31 | 2011-06-22 | セイコーエプソン株式会社 | 前駆体組成物、前駆体組成物の製造方法、強誘電体膜の製造方法、圧電素子、半導体装置、圧電アクチュエータ、インクジェット式記録ヘッド、およびインクジェットプリンタ |
-
2004
- 2004-12-24 JP JP2004373797A patent/JP4269172B2/ja not_active Expired - Fee Related
-
2005
- 2005-12-20 US US11/312,971 patent/US7713348B2/en active Active
- 2005-12-21 EP EP20050028006 patent/EP1674593A3/en not_active Withdrawn
- 2005-12-23 KR KR20050128489A patent/KR100720630B1/ko not_active IP Right Cessation
- 2005-12-23 TW TW094146378A patent/TW200640705A/zh unknown
- 2005-12-26 CN CNB2005101341131A patent/CN100390100C/zh not_active Expired - Fee Related
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04506791A (ja) * | 1989-04-21 | 1992-11-26 | アルキャン インターナショナル リミテッド | ゾル・ゲル処理による薄膜セラミックの製造 |
JPH0769645A (ja) * | 1993-08-27 | 1995-03-14 | Murata Mfg Co Ltd | 鉛含有複合酸化物の製造方法 |
JPH0790594A (ja) * | 1993-09-24 | 1995-04-04 | Tokyo Ohka Kogyo Co Ltd | チタン系複合酸化物形成用塗布液 |
JPH07252664A (ja) * | 1994-03-14 | 1995-10-03 | Texas Instr Japan Ltd | ゾルーゲル法による強誘電体膜の形成方法、キャパシタの製造方法、その原料溶液の調製方法及びその原料溶液 |
JPH10226519A (ja) * | 1997-02-07 | 1998-08-25 | Nec Corp | 塗布法による酸化物薄膜の製造方法 |
US5908802A (en) * | 1997-10-30 | 1999-06-01 | Sandia Corporation | Nonaqueous solution synthesis process for preparing oxide powders of lead zirconate titanate and related materials |
JP2001158607A (ja) * | 1999-12-02 | 2001-06-12 | Seiko Epson Corp | 酸化物薄膜の製造方法、メモリ素子の製造方法及び圧電体素子の製造方法並びにこれらの製造方法により製造される酸化物薄膜、メモリ素子及び圧電体素子 |
JP2001213625A (ja) * | 2000-01-27 | 2001-08-07 | Seiko Epson Corp | チタン酸ジルコン酸鉛薄膜の製造方法及びそれを用いた薄膜デバイス |
JP2001279464A (ja) * | 2000-03-29 | 2001-10-10 | Seiko Epson Corp | 強誘電体薄膜の作製方法 |
JP2003002647A (ja) * | 2000-12-27 | 2003-01-08 | Mitsubishi Materials Corp | Plzt強誘電体薄膜、その形成用組成物及び形成方法 |
JP2003311196A (ja) * | 2002-04-19 | 2003-11-05 | Seiko Epson Corp | 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、非接触型カード媒体、圧電体素子、並びにインクジェット式記録ヘッド |
WO2004038733A1 (ja) * | 2002-10-24 | 2004-05-06 | Seiko Epson Corporation | 強誘電体膜、強誘電体キャパシタ、強誘電体メモリ、圧電素子、半導体素子、強誘電体膜の製造方法、及び強誘電体キャパシタの製造方法 |
JP2004235553A (ja) * | 2003-01-31 | 2004-08-19 | Canon Inc | 圧電体膜成膜用支持基板、圧電体素子、インクジェット記録ヘッド |
JP2004277200A (ja) * | 2003-03-13 | 2004-10-07 | Seiko Epson Corp | 強誘電体薄膜並びに強誘電体薄膜製造方法 |
JP2004299921A (ja) * | 2003-03-28 | 2004-10-28 | Seiko Epson Corp | 塗布用セラミックス材料およびその製造方法 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009252786A (ja) * | 2008-04-01 | 2009-10-29 | Seiko Epson Corp | 酸化物原料溶液、酸化物膜、圧電素子、酸化物膜の形成方法および圧電素子の製造方法 |
WO2011089748A1 (ja) * | 2010-01-21 | 2011-07-28 | 株式会社ユーテック | Pbnzt強誘電体膜、ゾルゲル溶液、成膜方法及び強誘電体膜の製造方法 |
JP5903578B2 (ja) * | 2010-01-21 | 2016-04-13 | 株式会社ユーテック | Pbnzt強誘電体膜及び強誘電体膜の製造方法 |
US9431242B2 (en) | 2010-01-21 | 2016-08-30 | Youtec Co., Ltd. | PBNZT ferroelectric film, sol-gel solution, film forming method and method for producing ferroelectric film |
US9966527B2 (en) | 2010-01-21 | 2018-05-08 | Youtec Co., Ltd. | PBNZT ferroelectric film, sol-gel solution, film forming method and method for producing ferroelectric film |
JP2011155204A (ja) * | 2010-01-28 | 2011-08-11 | Ricoh Co Ltd | ゾルゲル液、電気−機械変換素子、液体吐出ヘッド及びインクジェット記録装置 |
US8690297B2 (en) | 2010-01-28 | 2014-04-08 | Ricoh Company, Limited | Sol-gel liquid, electromechanical conversion element, liquid discharge head and inkjet recorder |
JP2014154610A (ja) * | 2013-02-06 | 2014-08-25 | Ricoh Co Ltd | 薄膜製造方法、電気機械変換素子、液滴吐出ヘッド、及びインクジェット記録装置 |
JP2014175550A (ja) * | 2013-03-11 | 2014-09-22 | Ricoh Co Ltd | 圧電膜及びその製造方法 |
US9056454B2 (en) | 2013-06-19 | 2015-06-16 | Ricoh Company, Ltd. | Actuator, method of manufacturing the actuator, and liquid droplet ejecting head, liquid droplet ejecting apparatus, and image forming apparatus having the actuator |
JP2017031497A (ja) * | 2015-08-03 | 2017-02-09 | 小林 博 | 部品ないしは基材に互いに異なる複数の性質を付与する表面の改質 |
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CN100390100C (zh) | 2008-05-28 |
KR100720630B1 (ko) | 2007-05-21 |
EP1674593A3 (en) | 2007-03-14 |
KR20060073503A (ko) | 2006-06-28 |
US20060138382A1 (en) | 2006-06-29 |
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TW200640705A (en) | 2006-12-01 |
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