JP2006140207A - Thermosetting resin composition for light reflection, optical semiconductor loading substrate using the same, its manufacturing method and optical semiconductor device - Google Patents

Thermosetting resin composition for light reflection, optical semiconductor loading substrate using the same, its manufacturing method and optical semiconductor device Download PDF

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JP2006140207A
JP2006140207A JP2004326505A JP2004326505A JP2006140207A JP 2006140207 A JP2006140207 A JP 2006140207A JP 2004326505 A JP2004326505 A JP 2004326505A JP 2004326505 A JP2004326505 A JP 2004326505A JP 2006140207 A JP2006140207 A JP 2006140207A
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optical semiconductor
resin composition
semiconductor element
thermosetting resin
element mounting
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JP5060707B2 (en
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Naoyuki Urasaki
直之 浦崎
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Hitachi Chem Co Ltd
日立化成工業株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

PROBLEM TO BE SOLVED: To provide a thermosetting resin composition for light reflection, which has high reflectance in a visible light to near-ultraviolet light region and has high heat dissipation, and to provide an optical semiconductor loading substrate using the resin composite and a manufacturing method of the optical semiconductor loading substrate.
SOLUTION: The thermosetting resin composition for light reflection comprises (A) epoxy resin, (B) curing agent, (C) a curing catalyst, (D) filler and (E) coupling agent. Optical reflectance in a wavelength 800 nm to 350 nm after heat curing is 80% or above. Thermal conductivity is in a range of 1 to 10 W/mK. The composite can be pressed in a room temperature before heat curing. The optical semiconductor loading substrate with high light reflectance and high heat dissipation can be manufactured by the thermosetting resin composite for light reflection.
COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、光半導体素子と蛍光体などの波長変換手段とを組み合わせた光半導体装置に用いる光反射用熱硬化性樹脂組成物、該光反射用熱硬化性樹脂組成物を用いた光半導体素子搭載用基板とその製造方法および光半導体装置に関する。 The present invention relates to an optical semiconductor device and the light reflecting thermosetting resin composition used in the optical semiconductor device obtained by combining the wavelength conversion means such as a phosphor, an optical semiconductor device using the light reflective thermosetting resin composition mounting board and its manufacturing method and an optical semiconductor device.

LED(Light Emitting Diode:発光ダイオード)などの光半導体素子と蛍光体を組み合わせた光半導体装置は、省電力で寿命が長い発光装置として注目されている。 LED (Light Emitting Diode: light-emitting diode) light semiconductor device that combines an optical semiconductor element and the phosphor, such as, life saving has attracted attention as a long light emitting apparatus. 中でも、1次光となる近紫外光を発光するLED素子と、該1次光を吸収して、赤(R)、緑(G)、青(B)の3色を発光する蛍光体とを組み合わせた白色LEDは、演色性に優れるという点から、その開発が活発に進められている。 Among them, an LED element that emits near ultraviolet light as the primary light, absorbs the primary light, red (R), green (G), and a phosphor emitting blue (B) the combined white LED from the viewpoint of excellent color rendering properties, their development has been actively developed. 近紫外光とRGB蛍光体を用いる白色LEDの発光効率は、1次紫外光の41%が白色光として、27%が透過紫外光として、32%が熱などに変換されている(非特許文献1にて引用された「21世紀あかりプロジェクト2001年度成果報告書」から)。 Luminous efficiency of the white LED using a near-ultraviolet light and RGB phosphors, as 41% of the primary ultraviolet light white light, as 27% transmission ultraviolet light, 32% is converted like into heat (non-patent literature from cited "fiscal 21st century lights project 2001 results report" at 1).

白色光に変換されなかった透過紫外光や熱は、LEDパッケージなどに使用されている透明封止剤やリフレクタを劣化させる要因となるため、輝度低下の原因となっていた。 Transmitting ultraviolet light or heat that is not converted into white light, it becomes a factor that degrades the transparent sealant and a reflector which is used like the LED package, thus causing luminance reduction. 特許文献1には、65重量%以上の熱可塑性樹脂と35重量%以下の充填剤からなるリフレクタ材料が開示されているが、近紫外光の反射率や熱伝導性などの特性が十分であるとはいえない。 Patent Document 1, although reflecting material consisting of 65 wt% or more of the thermoplastic resin and 35% by weight of filler are disclosed, is sufficient characteristics such as reflectance and thermal conductivity of the near-ultraviolet light it can not be said. そこで、可視光から近紫外光の反射率が高く、かつ高熱伝導性を有する材料の開発が待たれていた。 Therefore, high reflectance of near-ultraviolet light from the visible light, and development of materials having high thermal conductivity has been demanded.

特開2002−314142 Patent 2002-314142

上記を鑑みて、本発明は、光反射率が高く、高熱伝導性を有する光反射用熱硬化性樹脂組成物、ならびに該光反射用熱硬化性樹脂組成物を用いた光半導体搭載用基板とその製造方法および光半導体装置を提供することを目的とする。 In view of the above, the present invention relates to an optical reflectance is high, the light reflecting thermosetting resin composition having a high thermal conductivity, and the optical semiconductor mounting board with the light reflecting thermosetting resin composition and to provide a manufacturing method and an optical semiconductor device.

本発明は、以下の(1)〜(8)に記載の事項をその特徴とする。 The present invention, the following (1) items described to (8) and its features.

(1)(A)エポキシ樹脂、(B)硬化剤、(C)硬化触媒、(D)無機充填剤、(E)白色顔料、および(F)カップリング剤を含有する熱硬化性樹脂組成物において、熱硬化後の、波長800nm〜350nmにおける光反射率が80%以上であり、かつ熱伝導率が1〜10W/mKの範囲であり、熱硬化前には室温において加圧成形可能である、ことを特徴とする光反射用熱硬化性樹脂組成物。 (1) (A) epoxy resin, (B) a curing agent, (C) a curing catalyst, (D) an inorganic filler, (E) a white pigment, and (F) a thermosetting resin composition containing a coupling agent in, after thermal curing, and the light reflectance is 80% or more at a wavelength 800Nm~350nm, and ranges thermal conductivity of 1 to 10 W / mK, prior to thermal curing can be pressing at room temperature light reflecting thermosetting resin composition characterized.

(2)前記(D)無機充填剤が、シリカ、アルミナ、酸化マグネシウム、酸化アンチモン、水酸化アルミニウム、硫酸バリウム、炭酸マグネシウム、炭酸バリウムからなる群から選択される1種以上であることを特徴とする上記(1)に記載の光反射用熱硬化性樹脂組成物。 (2) the (D) inorganic filler, and wherein the silica, alumina, magnesium oxide, antimony oxide, aluminum hydroxide, barium sulfate, magnesium carbonate, that is one or more selected from the group consisting of barium carbonate light reflecting thermosetting resin composition according to the above (1).

(3)前記(E)白色顔料が、アルミナ、酸化マグネシウム、酸化アンチモン、水酸化アルミニウム、硫酸バリウム、炭酸マグネシウム、炭酸バリウムからなる群から選択される1種以上であることを特徴とする上記(1)または(2)に記載の光反射用熱硬化性樹脂組成物。 (3) the (E) white pigment, alumina, magnesium oxide, antimony oxide, aluminum hydroxide, above, wherein the at least one selected from the group consisting of barium sulfate, magnesium carbonate, from barium carbonate ( 1) or a light reflecting thermosetting resin composition according to (2).

(4)前記(E)白色顔料の中心粒径が0.1〜5μmの範囲にあることを特徴とする上記(1)〜(3)のいずれか1つに記載の光反射用熱硬化性樹脂組成物。 (4) the (E) the central particle size of the white pigment is characterized in that in the range of 0.1 to 5 [mu] m (1) ~ light reflecting thermosetting according to any one of (3) resin composition.

(5)前記(D)無機充填剤と前記(E)白色顔料の合計量が、樹脂組成物全体に対して85重量%〜95重量%の範囲であることを特徴とする上記(1)〜(4)のいずれか1つに記載の光反射用熱硬化性樹脂組成物。 (5) the (D) the inorganic filler (E) the total amount of the white pigment, above, wherein the range of 85% to 95% by weight relative to the entire resin composition (1) - (4) the light reflecting thermosetting resin composition according to any one of.

(6)光半導体素子搭載領域となる凹部が1つ以上形成されている光半導体素子搭載用基板であって、少なくとも前記凹部の内周側面が上記(1)〜(5)のいずれか1つに記載の光反射用熱硬化性樹脂組成物からなることを特徴とする光半導体素子搭載用基板。 (6) The optical semiconductor element mounting substrate recess to serve as the optical semiconductor element mounting region is formed of one or more inner peripheral side surface of at least the recess is any one of the above (1) to (5) the optical semiconductor element mounting substrate, characterized by comprising a light reflecting thermosetting resin composition according to.

(7)光半導体素子搭載領域となる凹部が1つ以上形成されている光半導体素子搭載用基板の製造方法であって、少なくとも前記凹部を上記(1)〜(5)のいずれか1項記載の光反射用熱硬化性樹脂組成物を用いたトランスファー成型により形成することを特徴とする光半導体搭載用基板の製造方法。 (7) In the method of the optical semiconductor element mounting board recess to serve as the optical semiconductor element mounting region is formed at least one, at least the recess (1) to any one of claims (5) method of manufacturing an optical semiconductor mounting board, characterized in that the forming by transfer molding using a light reflecting thermosetting resin composition.

(8)上記(6)に記載の光半導体素子搭載用基板または上記(7)に記載の製造方法により製造された光半導体素子搭載用基板と、前記光半導体素子搭載用基板の凹部底面に搭載される光半導体素子と、前記光半導体素子を覆うように形成される封止樹脂と、を備える光半導体装置。 (8) mounted on manufacturing the optical semiconductor element mounting substrate manufactured by the method, the recess bottom surface of the optical element mounting substrate according to the optical semiconductor element mounting substrate or the (7) according to (6) optical semiconductor device comprising an optical semiconductor element, and a sealing resin formed to cover the optical semiconductor element.

本発明によれば、光反射率が高く、高熱伝導性を有する光反射用熱硬化性樹脂組成物、ならびに該光反射用熱硬化性樹脂組成物を用いた光半導体搭載用基板およびその製造方法を提供することが可能となる。 According to the present invention, high light reflectance, light reflecting thermosetting resin composition having a high thermal conductivity, and optical semiconductor mounting substrate and a manufacturing method thereof using a light reflecting thermosetting resin composition it is possible to provide a.

上記(A)エポキシ樹脂としては、電子部品封止用エポキシ樹脂成形材料で一般に使用されているものを用いることができ、特に限定されないが、例えば、フェノールノボラック型エポキシ樹脂、オルソクレゾールノボラック型エポキシ樹脂をはじめとするフェノール類とアルデヒド類のノボラック樹脂をエポキシ化したもの、ビスフェノールA、ビスフェノールF、ビスフェノールS、アルキル置換ビフェノール等のジグリシジエーテル、ジアミノジフェニルメタン、イソシアヌル酸等のポリアミンとエピクロルヒドリンの反応により得られるグリシジルアミン型エポキシ樹脂、オレフィン結合を過酢酸等の過酸で酸化して得られる線状脂肪族エポキシ樹脂、及び脂環族エポキシ樹脂等があり、これらは単独でも、2種以上併用してもよい Examples of the epoxy resin (A), there can be used those which are generally used in electronic parts encapsulating epoxy resin molding material is not particularly limited, for example, phenol novolak type epoxy resin, ortho-cresol novolak type epoxy resin that epoxidized novolak resins of phenols and aldehydes, including, resulting bisphenol a, bisphenol F, bisphenol S, diglycidyl ethers such as an alkyl-substituted biphenol, diaminodiphenylmethane, by reaction of a polyamine with epichlorohydrin, such as isocyanuric acid glycidyl amine type epoxy resins, linear aliphatic epoxy resins obtained by oxidizing with a peracid such as peracetic acid an olefinic bond, and has an alicyclic epoxy resin, etc., which are used singly, in combination of two or more it may be また、使用するエポキシ樹脂は比較的着色のないものであることが好ましく、そのようなエポキシ樹脂としては、例えば、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ビスフェノールS型エポキシ樹脂、トリグリシジルイソシアヌレートを挙げることができる。 Further, it is preferable that the epoxy resin used is one not relatively colored Such epoxy resins include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, triglycidyl isocyanurate mention may be made of the isocyanurate.

上記(B)硬化剤としては、エポキシ樹脂と反応するものであれば、特に制限なく用いることができるが、比較的着色のないものが好ましい。 As the curing agent (B), as long as it reacts with the epoxy resin, it can be used without any particular limitation, those without relatively coloration are preferable. 例えば、酸無水物系硬化剤、フェノール系硬化剤などが挙げられる。 For example, acid anhydride curing agents, phenol-based curing agent. 酸無水物系硬化剤としては、例えば、無水フタル酸、無水マレイン酸、無水トリメリット酸、無水ピロメリット酸、ヘキサヒドロ無水フタル酸、テトラヒドロ無水フタル酸、無水メチルナジック酸、無水ナジック酸、無水グルタル酸、メチルヘキサヒドロ無水フタル酸、メチルテトラヒドロ無水フタル酸などが挙げられる。 The acid anhydride curing agent include phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methyl nadic anhydride, nadic acid, glutaric anhydride acid, methylhexahydrophthalic anhydride, and the like methyl tetrahydrophthalic anhydride. これら酸無水物系硬化剤の中では、無水フタル酸、へキサヒドロ無水フタル酸、テトラヒドロ無水フタル酸、メチルヘキサヒドロ無水フタル酸を用いることが好ましい。 Among these acid anhydride curing agent, phthalic anhydride, to Kisahidoro phthalic anhydride, tetrahydrophthalic anhydride, it is preferable to use a methylhexahydrophthalic anhydride. 酸無水物系硬化剤は、その分子量が、140〜200程度のものが好ましく、また、無色ないし淡黄色の酸無水物が好ましい。 Acid anhydride curing agent has a molecular weight, preferably of about 140 to 200, also anhydride colorless or pale yellow is preferred.

これらの硬化剤は単独で用いても、二種以上併用しても良い。 It is used These curing agents alone or in combination of two or more. エポキシ樹脂と、硬化剤との配合割合は、エポキシ樹脂中のエポキシ基1当量に対して、硬化剤におけるエポキシ基と反応可能な活性基(酸無水基または水酸基)が0.5〜1.5当量となるような割合であることが好ましく、0.7〜1.2当量となるような割合であることがより好ましい。 An epoxy resin, mixing ratio of the curing agent is an epoxy of the epoxy group equivalent of the resin, capable of reacting active group and an epoxy group in the curing agent (acid anhydride group or a hydroxyl group) is 0.5 to 1.5 is preferably a proportion of about equivalent, and more preferably a ratio such that 0.7 to 1.2 equivalents. 活性基が0.5当量未満の場合には、エポキシ樹脂組成物の硬化速度が遅くなるとともに、得られる硬化体のガラス転移温度が低くなる場合があり、一方、1.5当量を超える場合には、耐湿性が低下する場合がある。 If the active group is less than 0.5 equivalent, with cure rate of the epoxy resin composition becomes slow, there is a case where the glass transition temperature of the cured product obtained becomes low, whereas, if it exceeds 1.5 equivalents may moisture resistance is lowered.

上記(C)硬化促進剤としては、特に限定されるものではなく、例えば、1,8−ジアザ−ビシクロ(5,4,0)ウンデセン−7、トリエチレンジアミン、トリ−2,4,6−ジメチルアミノメチルフェノールなどの3級アミン類、2−エチル−4−メチルイミダゾール、2−メチルイミダゾールなどのイミダゾール類、トリフェニルホスフィン、テトラフェニルホスホニウムテトラフェニルボレート、テトラ−n−ブチルホスホニウム−o,o−ジエチルホスホロジチオエートなどのリン化合物、4級アンモニウム塩、有機金属塩類、およびこれらの誘導体などが挙げられる。 As the (C) curing accelerator is not particularly limited, for example, 1,8-diaza - bicyclo (5,4,0) undecene-7, triethylenediamine, tri-2,4,6-dimethyl tertiary amines such as aminomethyl phenol, 2-ethyl-4-methylimidazole, 2-imidazoles such as methylimidazole, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetra -n- butyl phosphonium -o, o- phosphorus compounds such as diethyl phosphorodithioate, quaternary ammonium salts, organometallic salts, and derivatives thereof. これらは単独で使用してもよく、あるいは、併用してもよい。 These may be used alone, or may be used in combination. これら硬化促進剤の中では、3級アミン類、イミダゾール類、リン化合物を用いることが好ましい。 Among these curing accelerators, tertiary amines, imidazoles, it is preferable to use a phosphorus compound.

硬化促進剤の含有率は、エポキシ樹脂に対して、0.01〜8.0重量%であることが好ましく、より好ましくは、0.1〜3.0重量%である。 The content of the curing accelerator for the epoxy resin is preferably from 0.01 to 8.0 wt%, more preferably 0.1 to 3.0 wt%. 硬化促進剤の含有率が、0.01重量%未満では、充分な硬化促進効果を得られない場合があり、また、8.0重量%を超えると、得られる硬化体に変色が見られる場合がある。 If the content of the curing accelerator is less than 0.01 wt%, there may not be obtained a sufficient curing accelerating effect, also it exceeds 8.0 wt%, the discoloration in the cured product obtained is observed there is.

上記(D)無機充填材としては、例えば、シリカ、アルミナ、酸化マグネシウム、酸化アンチモン、水酸化アルミニウム、硫酸バリウム、炭酸マグネシウム、炭酸バリウムなどを挙げることができ、単独でも、併用しても構わない。 As the inorganic filler (D), for example, silica, alumina, magnesium oxide, antimony oxide, aluminum hydroxide, barium sulfate, magnesium carbonate, etc. can be mentioned barium carbonate, alone, may be used in combination . 熱伝導性、光反射特性、成型性、難燃性の点からは、シリカ、アルミナ、酸化アンチモン、水酸化アルミニウムのうちの2種以上の混合物であることが好ましい。 Thermal conductivity, optical reflection characteristics, moldability, in view of flame retardancy, silica, alumina, antimony oxide, is preferably a mixture of two or more of aluminum hydroxide. また、無機充填材の粒径は、特に限定されるものではないが、白色顔料とのパッキング効率を考慮すると、中心粒径が1〜100μmの範囲であることが好ましい。 The particle size of the inorganic filler is not particularly limited, considering the packing efficiency of the white pigment is preferably a center particle size is in the range of 1 to 100 [mu] m.

上記(E)白色顔料としては、例えば、アルミナ、酸化マグネシウム、酸化アンチモン、水酸化アルミニウム、硫酸バリウム、炭酸マグネシウム、炭酸バリウムなどを挙げることができ、単独でも、併用しても構わない。 The (E) as a white pigment, for example, alumina, magnesium oxide, antimony oxide, aluminum hydroxide, barium sulfate, magnesium carbonate, etc. can be mentioned barium carbonate, alone, it may be used in combination. 熱伝導性、光反射特性の点からは、アルミナ、酸化マグネシウム、またはそれらの混合物であることが好ましい。 Thermal conductivity, in terms of light reflection characteristics, alumina is preferably magnesium oxide or mixtures thereof. また、白色顔料の粒径は、中心粒径が0.1〜5μmの範囲にあることが好ましい。 The particle size of the white pigment is preferably a center particle size in the range of 0.1 to 5 [mu] m. 中心粒径が0.1μm未満であると粒子が凝集しやすく、分散性が悪くなる傾向があり、5μmを超えると反射特性が十分に得られなくなる傾向がある。 Median particle size particles tend to agglomerate is less than 0.1 [mu] m, there is a tendency that dispersibility becomes poor, there is a tendency that the reflection characteristics can not be obtained sufficiently exceeds 5 [mu] m.

上記(D)無機充填材と上記(E)白色顔料の合計量は、樹脂組成物全体に対して、85重量%〜95重量%の範囲であることが好ましい。 The inorganic filler (D) and the (E) the total amount of the white pigment, based on total resin composition is preferably in the range of 85% to 95% by weight. この合計量が85重量%未満であると熱伝導性や光反射特性が不十分になる恐れがあり、95重量%を超えると樹脂組成物の成型性が悪くなり、光半導体搭載用基板の作製が困難となる。 There is a possibility that the thermal conductivity and light reflection characteristics this total amount is less than 85% by weight is insufficient, more than 95% by weight deteriorates the moldability of the resin composition, the production of optical semiconductor mounting board It becomes difficult.

上記(F)カップリング剤としては、特に限定されないが、例えば、シラン系カップリング剤やチタネート系カップリング剤等を用いることができ、シランカップリング剤としては、例えば、エポキシシラン系、アミノシラン系、カチオニックシラン系、ビニルシラン系、アクリルシラン系、メルカプトシラン系、およびこれらの複合系等を用いることができる。 As the (F) a coupling agent is not particularly limited, for example, it can be used a silane coupling agent or a titanate coupling agent, the silane coupling agent, for example, epoxy silane, amino silane , cationic silane, vinylsilane, acrylic silane, mercapto silane, and these can be used a composite system, and the like. カップリング剤の種類や処理条件は特に限定しないが、カップリング剤の配合量は5重量%以下であることが好ましい。 The type and processing conditions of the coupling agent is not particularly limited, it is preferable amount of the coupling agent is 5 wt% or less.

また、本発明の樹脂組成物には、必要に応じて、酸化防止剤、離型剤、イオン補足剤等の添加剤を添加してもよい。 Further, the resin composition of the present invention may optionally contain antioxidants, releasing agents, it may be added additives such as ion scavengers.

以上のような成分を含有する本発明の樹脂組成物は、熱硬化前、室温において加圧成形可能であり、熱硬化後の、波長800nm〜350nmにおける光反射率が80%以上であり、かつ熱伝導率が1〜10W/mKの範囲である。 The resin composition of the present invention comprising components as described above, before thermal curing, it is possible pressing at room temperature, after thermal curing, and the light reflectance is 80% or more at a wavelength 800Nm~350nm, and thermal conductivity in the range of 1 to 10 W / mK. 上記加圧成形は、例えば、室温(約25℃)において、0.5〜2MPa、1〜5秒程度の条件下で行うことができればよい。 The pressure molding, for example, at room temperature (about 25 ° C.), 0.5 to 2 MPa, it is sufficient be performed under conditions of about 1 to 5 seconds. また、上記光反射率が80%未満であると、光半導体装置の輝度向上に十分寄与できない傾向がある。 Further, when the reflectance is less than 80%, it tends not to be sufficiently contribute to brightness improvement of the optical semiconductor device. より好ましくは、光反射率は90%以上である。 More preferably, the light reflectance is 90% or more. また、熱伝導率が1W/mK未満であると光半導体素子から発生する熱を十分に逃がすことができず、封止樹脂等を劣化させてしまう恐れがある。 Further, it is impossible to escape the heat thermal conductivity is generated is less than 1W / mK from the optical semiconductor element sufficiently, which may deteriorates the sealing resin.

本発明の光半導体素子搭載用基板は、光半導体素子搭載領域となる凹部が1つ以上形成されており、少なくとも前記凹部の内周側面が本発明の光反射用熱硬化性樹脂組成物からなることを特徴とするものである。 The optical semiconductor element mounting substrate of the present invention, a concave portion serving as the optical semiconductor element mounting region is formed of one or more inner peripheral side surface of at least the concave portion made of a light reflecting thermosetting resin composition of the present invention it is characterized in. 本発明の光半導体素子搭載用基板の一実施形態を図1に示す。 One embodiment of an optical semiconductor element mounting substrate of the present invention shown in FIG.

本発明の光半導体素子搭載用基板の製造方法は、特に限定されないが、例えば、本発明の光反射用熱硬化性樹脂組成物をトランスファー成型により成型し、製造することができる。 Method for manufacturing an optical semiconductor element mounting substrate of the present invention is not particularly limited, for example, a light reflecting thermosetting resin composition of the present invention is molded by transfer molding, it can be produced. より具体的には、例えば、図2(a)に示すように、金属箔から打ち抜きやエッチング等の公知の方法により金属配線105を形成し、ついで、該金属配線105を所定形状の金型301に配置し(図2(b))、金型301の樹脂注入口300から本発明の樹脂組成物を注入し、これを好ましくは金型温度170〜190℃で60〜120秒、アフターキュア温度120℃〜180℃で1〜3時間の条件にて熱硬化させた後、金型301を外し、硬化した樹脂組成物からなるリフレクター103に周囲を囲まれてなる光半導体素子搭載領域(凹部)200の所定位置に、電気めっきによりNi/銀めっき104を施すことで製造することができる(図2(c))。 More specifically, for example, as shown in FIG. 2 (a), by a known method such as punching or etching a metal foil to form a metal wiring 105, then, the mold having a predetermined shape said metal wires 105 301 disposed (FIG. 2 (b)), the resin composition of the present invention from the resin injection port 300 of the mold 301 is injected, which preferably 60-120 seconds at a mold temperature of 170 to 190 ° C., after-curing temperature after heat-cured at 1-3 hours conditions at 120 ° C. to 180 ° C., the mold 301 removed, cured composed surrounded by the reflector 103 made of a resin composition optical semiconductor element mounting region (recess) in position 200, it can be produced by subjecting a Ni / silver plating 104 by electroplating (Fig. 2 (c)).

また、本発明の光半導体装置は、例えば、図3および図4に示すように、本発明の光半導体素子搭載用基板110の光半導体素子搭載領域(凹部)200の所定位置に光半導体素子100を搭載し、該光半導体素子100と金属配線105とをボンディングワイヤ102やはんだバンプ107などの公知の方法により電気的に接続した後、公知の蛍光体106を含む透明封止樹脂101により該光半導体素子100を覆うことで製造することができる。 Further, the optical semiconductor device of the present invention, for example, as shown in FIGS. 3 and 4, the optical semiconductor element 100 in a predetermined position of the optical semiconductor element mounting region (recess) 200 of the photosemiconductor element mounting board 110 of the present invention mounted, after electrically connecting by a known method and optical semiconductor element 100 and the metal interconnection 105, such as a bonding wire 102 or solder bump 107, the light by a transparent sealing resin 101 containing a known fluorescent substance 106 it can be produced by covering the semiconductor device 100.

以下、本発明を実施例によって詳述する。 Hereinafter, examples illustrate the invention.

(光反射用樹脂組成物の作製) (Preparation of light-reflecting resin composition)
(実施例1) (Example 1)
下記組成の材料を混練温度20〜30℃、混練時間10分の条件でロール混練し、光反射用樹脂組成物を作製した。 Material kneading temperature 20 to 30 ° C. the following composition was roll-kneaded under conditions of a kneading time of 10 minutes, to prepare a light reflecting resin composition.
エポキシ樹脂:トリグリシジルイソシアヌレート 100重量部(エポキシ当量100) Epoxy resin: 100 parts by weight of triglycidyl isocyanurate (epoxy equivalent 100)
硬化剤:ヘキサヒドロ無水フタル酸 140重量部硬化促進剤:テトラ−n−ブチルホスホニウム− Curing agent: hexahydrophthalic anhydride 140 weight parts curing accelerator: tetra -n- butyl phosphonium -
o,o−ジエチルホスホロジチオエート 0.4重量部無機充填剤:溶融シリカ(中心粒径20μm) 1118重量部 o, o-diethyl phosphorodithioate 0.4 parts by weight of an inorganic filler: molten silica (center particle size 20 [mu] m) 1118 parts by weight
アルミナA(中心粒径40μm) 660重量部白色顔料:アルミナB(中心粒径1μm) 627重量部カップリング剤:エポキシシラン 3重量部酸化防止剤:9,10−ジヒドロ−9−オキサ− Alumina A (median particle size 40 [mu] m) 660 parts by weight white pigment: alumina B (median particle size 1 [mu] m) 627 parts by weight of coupling agent: Epoxy silane 3 parts by weight antioxidant: 9,10-dihydro-9-oxa -
10−ホスファフェナントレン−10−オキシド 1重量部 10 phospha-phenanthrene-10-oxide 1 part by weight

(実施例2) (Example 2)
無機充填剤:溶融シリカ(中心粒径20μm) 373重量部 Inorganic filler: molten silica (center particle size 20 [mu] m) 373 parts by weight
アルミナA(中心粒径40μm) 1881重量部白色顔料:アルミナB(中心粒径1μm) 660重量部とした以外は実施例1と同様にして光反射用樹脂組成物を作製した。 Alumina A (median particle size 40 [mu] m) 1881 weight parts white pigment: except that the alumina B (median particle size 1 [mu] m) 660 parts by weight in the same manner as in Example 1 was fabricated a light reflecting resin composition.

(実施例3) (Example 3)
無機充填剤:溶融シリカ(中心粒径20μm) 1088重量部 Inorganic filler: molten silica (center particle size 20 [mu] m) 1088 parts by weight
アルミナA(中心粒径40μm) 610重量部白色顔料:酸化マグネシウム(中心粒径0.2μm) 544重量部とした以外は実施例1と同様にして光反射用樹脂組成物を作製した。 Alumina A (median particle size 40 [mu] m) 610 parts by weight white pigment: a except for using magnesium oxide (median particle size 0.2 [mu] m) 544 parts by weight in the same manner as in Example 1 to prepare a light reflecting resin composition.

(比較例1) (Comparative Example 1)
無機充填剤:溶融シリカ(中心粒径20μm) 419重量部 Inorganic filler: molten silica (center particle size 20 [mu] m) 419 parts by weight
アルミナA(中心粒径40μm) 235重量部白色顔料:アルミナB(中心粒径1μm) 247重量部とした以外は実施例1と同様にして光反射用樹脂組成物を作製した。 Alumina A (median particle size 40 [mu] m) 235 parts by weight white pigment: except that the alumina B (median particle size 1 [mu] m) 247 parts by weight in the same manner as in Example 1 was fabricated a light reflecting resin composition.

(比較例2) (Comparative Example 2)
無機充填剤:溶融シリカ(中心粒径20μm) 623重量部 Inorganic filler: molten silica (center particle size 20 [mu] m) 623 parts by weight
アルミナA(中心粒径40μm) 3147重量部白色顔料:アルミナB(中心粒径1μm) 1105重量部とした以外は実施例1と同様にして光反射用樹脂組成物を作製した。 Alumina A (median particle size 40 [mu] m) 3147 weight parts white pigment: except that the alumina B (median particle size 1 [mu] m) 1105 parts by weight in the same manner as in Example 1 was fabricated a light reflecting resin composition.

(光反射率および熱伝導率の測定) (Measurement of light reflectance and thermal conductivity)
各実施例及び各比較例の光反射用樹脂組成物を、金型温度180℃、キュア時間90秒の条件でトランスファー成形を行った後、150℃の温度で2時間ポストキュアを行うことによって厚み0.5mmのテストピースを作製した。 A light reflecting resin compositions of Examples and Comparative Examples, a mold temperature of 180 ° C., after transfer molding under the conditions of curing time 90 seconds, thickness by performing 2 hours post-cured at a temperature of 0.99 ° C. to prepare a test piece of 0.5mm. ついで、各テストピースの、波長350〜800nmにおける光反射率を積分球型分光光度計V−570型(日本分光株式会社製)を用いて測定した。 Then, each test piece was measured reflectance using an integrating sphere-type spectrophotometer V-570 type (manufactured by JASCO Corporation) at a wavelength of 350 to 800 nm. また、150℃、72時間熱処理後の各テストピースの光反射特性も合わせて評価した。 Further, 0.99 ° C., was evaluated also to the light reflectance properties of each test piece after 72 hours heat treatment. 評価基準は下記のとおりである。 The evaluation criteria are as follows. 結果を表1に示す。 The results are shown in Table 1.
<光反射率の評価基準> <Evaluation Criteria of light reflectance>
○:光反射率80%以上 △:光反射率70%以上、80%未満 ×:光反射率70%未満 ○: light reflectance of 80% or more △: light reflectance of 70% or more and less than 80% ×: light reflectance less than 70%

さらに、各テストピースの熱拡散率を熱拡散率測定装置LFA447Nanoflash(ネッチゲレイテバウ社製)を用いて測定し、熱伝導率を下記式1に基づいて計算した。 Furthermore, the thermal diffusivity of the test piece was measured using a thermal diffusivity measuring apparatus LFA447Nanoflash (manufactured by Network soup Leyte bow Inc.) was calculated based on the thermal conductivity by the following formula 1. 結果を表1に示す。 The results are shown in Table 1.
λ=α×Cp×ρ (式1) λ = α × Cp × ρ (Equation 1)
λ:熱伝導率 α:熱拡散率 Cp:熱容量(比熱) lambda: thermal conductivity alpha: thermal diffusivity Cp: heat capacity (specific heat)
ρ:密度 ρ: Density

(タブレット作製) (Tablet manufacturing)
各実施例及び各比較例の光反射用樹脂組成物について、室温(25℃)でタブレット成型できるものを○、タブレット成型できないものを×として評価した。 The light reflecting resin compositions of Examples and Comparative Examples were evaluated ○ what can tabletting at room temperature (25 ° C.), those which can not tabletting as ×. なお、タブレットの成型は、MTV−I−37((株)丸七鉄工所製、商品名)を用い、0.7MPa、2秒の条件で行った。 In addition, the molding of the tablet, MTV-I-37 ((Ltd.) round seven Iron Works, Ltd., trade name) was used, 0.7MPa, was carried out in two seconds conditions.

表1に示したように、各実施例は各比較例と比べて、反射特性、熱伝導率、作業性(タブレット成型性)に優れている。 As shown in Table 1, the examples are compared with each Comparative Example, has excellent reflective properties, thermal conductivity, workability (tablet moldability). したがって、本発明に係る光反射用熱硬化性樹脂組成物を用いると、可視光から近紫外光領域において高い反射率を有する高放熱性の光半導体素子搭載用基板を効率的に得ることができる。 Therefore, when this light reflecting thermosetting resin composition according to the present invention, it is possible to obtain a high heat radiation of the optical semiconductor element mounting board having a high reflectance in the near-ultraviolet light from visible light efficiently .

本発明の光半導体素子搭載用基板の一実施形態を示す断面図と斜視図である。 It is a cross-sectional view and a perspective view showing an embodiment of an optical semiconductor element mounting substrate of the present invention. 本発明の光半導体素子搭載用基板を製造する工程の一実施形態を示す概略図である。 It is a schematic diagram showing one embodiment of a process for manufacturing an optical semiconductor element mounting substrate of the present invention. 本発明の光半導体装置の一実施形態を示す断面図である。 It is a cross-sectional view showing an embodiment of an optical semiconductor device of the present invention. 本発明の光半導体素子搭載用基板に光半導体素子を搭載した状態の一実施形態を示す斜視図である。 Is a perspective view showing an embodiment of a state in which mounting the optical semiconductor element on a photosemiconductor element mounting board of the present invention.

符号の説明 DESCRIPTION OF SYMBOLS

100・・・・・光半導体素子(LED素子) 100 ----- optical semiconductor element (LED element)
101・・・・・封止樹脂102・・・・・ボンディングワイヤ103・・・・・リフレクター104・・・・・Ni/Agめっき105・・・・・金属配線106・・・・・蛍光体107・・・・・はんだバンプ110・・・・・光半導体素子搭載用基板200・・・・・光半導体素子搭載領域(凹部) 101 ----- sealing resin 102 ----- bonding wires 103 ----- reflector 104 ----- Ni / Ag plating 105 ----- metal wiring 106 ..... phosphor 107 ----- solder bumps 110 ----- optical semiconductor element mounting board 200 ----- optical semiconductor element mounting region (recess)
300・・・・・樹脂注入口301・・・・・金型 300 ----- resin injection port 301 ..... mold

Claims (8)

  1. (A)エポキシ樹脂、(B)硬化剤、(C)硬化触媒、(D)無機充填剤、(E)白色顔料、および(F)カップリング剤を含有する熱硬化性樹脂組成物において、 (A) an epoxy resin, (B) a curing agent, (C) a curing catalyst, (D) an inorganic filler, in (E) white pigment, and (F) a thermosetting resin composition containing a coupling agent,
    熱硬化後の、波長800nm〜350nmにおける光反射率が80%以上であり、かつ熱伝導率が1〜10W/mKの範囲であり、熱硬化前には室温において加圧成形可能である、ことを特徴とする光反射用熱硬化性樹脂組成物。 After thermal curing, and the light reflectance is 80% or more at a wavelength 800Nm~350nm, and ranges thermal conductivity of 1 to 10 W / mK, prior to thermal curing can be pressing at room temperature, it light reflecting thermosetting resin composition characterized.
  2. 前記(D)無機充填剤が、シリカ、アルミナ、酸化マグネシウム、酸化アンチモン、水酸化アルミニウム、硫酸バリウム、炭酸マグネシウム、炭酸バリウムからなる群から選択される1種以上であることを特徴とする請求項1に記載の光反射用熱硬化性樹脂組成物。 The (D) inorganic filler, silica, alumina, magnesium oxide, antimony oxide, aluminum hydroxide, claims, characterized in that at least one member selected from the group consisting of barium sulfate, magnesium carbonate, from barium carbonate light reflecting thermosetting resin composition according to 1.
  3. 前記(E)白色顔料が、アルミナ、酸化マグネシウム、酸化アンチモン、水酸化アルミニウム、硫酸バリウム、炭酸マグネシウム、炭酸バリウムからなる群から選択される1種以上であることを特徴とする請求項1または2に記載の光反射用熱硬化性樹脂組成物。 The (E) white pigment, alumina, magnesium oxide, antimony oxide, aluminum hydroxide, according to claim 1 or 2, characterized in that at least one member selected from the group consisting of barium sulfate, magnesium carbonate, from barium carbonate light reflecting thermosetting resin composition according to.
  4. 前記(E)白色顔料の中心粒径が0.1〜5μmの範囲にあることを特徴とする請求項1〜3のいずれか1項記載の光反射用熱硬化性樹脂組成物。 The (E) white pigment median particle size of the light reflecting thermosetting resin composition of any one of claims 1 to 3, characterized in that in the range of 0.1~5μm of.
  5. 前記(D)無機充填剤と前記(E)白色顔料の合計量が、樹脂組成物全体に対して85重量%〜95重量%の範囲であることを特徴とする請求項1〜4のいずれか1項記載の光反射用熱硬化性樹脂組成物。 Wherein (D) the inorganic filler (E) the total amount of the white pigment, any one of the preceding claims, characterized in that in the range of 85% to 95% by weight relative to the whole resin composition light reflecting thermosetting resin composition according paragraph 1.
  6. 光半導体素子搭載領域となる凹部が1つ以上形成されている光半導体素子搭載用基板であって、少なくとも前記凹部の内周側面が請求項1〜5のいずれか1項記載の光反射用熱硬化性樹脂組成物からなることを特徴とする光半導体素子搭載用基板。 An optical semiconductor element mounting substrate recess to serve as the optical semiconductor element mounting region is formed of one or more heat for the light reflection of the inner peripheral surface of either one of claims 1 to 5 of at least the recess the optical semiconductor element mounting board, characterized in that a cured resin composition.
  7. 光半導体素子搭載領域となる凹部が1つ以上形成されている光半導体素子搭載用基板の製造方法であって、少なくとも前記凹部を請求項1〜5のいずれか1項記載の光反射用熱硬化性樹脂組成物を用いたトランスファー成型により形成することを特徴とする光半導体搭載用基板の製造方法。 A method for manufacturing an optical semiconductor element mounting substrate recess to serve as the optical semiconductor element mounting region are formed one or more, thermal curing light reflection in any one of claims 1 to 5 at least the recess method of manufacturing an optical semiconductor mounting substrate, which comprises forming by transfer molding using a sexual resin composition.
  8. 請求項6に記載の光半導体素子搭載用基板または請求項7に記載の製造方法により製造された光半導体素子搭載用基板と、 An optical semiconductor element mounting substrate manufactured by the method according to the optical semiconductor element mounting substrate or claim 7 according to claim 6,
    前記光半導体素子搭載用基板の凹部底面に搭載される光半導体素子と、 An optical semiconductor element mounted on the recess bottom surface of the optical element mounting substrate,
    前記光半導体素子を覆うように形成される封止樹脂と、 A sealing resin formed to cover the optical semiconductor element,
    を備える光半導体装置。 Optical semiconductor device comprising a.
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