JP2006128666A5 - - Google Patents
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- Publication number
- JP2006128666A5 JP2006128666A5 JP2005285804A JP2005285804A JP2006128666A5 JP 2006128666 A5 JP2006128666 A5 JP 2006128666A5 JP 2005285804 A JP2005285804 A JP 2005285804A JP 2005285804 A JP2005285804 A JP 2005285804A JP 2006128666 A5 JP2006128666 A5 JP 2006128666A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- forming
- semiconductor film
- gate
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 78
- 239000010410 layer Substances 0.000 claims 53
- 238000005530 etching Methods 0.000 claims 40
- 230000003197 catalytic effect Effects 0.000 claims 36
- 238000004519 manufacturing process Methods 0.000 claims 17
- 238000000034 method Methods 0.000 claims 17
- 239000012535 impurity Substances 0.000 claims 11
- 238000010438 heat treatment Methods 0.000 claims 10
- 239000011241 protective layer Substances 0.000 claims 10
- 239000000126 substance Substances 0.000 claims 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 229910017052 cobalt Inorganic materials 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- 229910052735 hafnium Inorganic materials 0.000 claims 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052758 niobium Inorganic materials 0.000 claims 2
- 239000010955 niobium Substances 0.000 claims 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 229910052720 vanadium Inorganic materials 0.000 claims 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 2
- 239000011787 zinc oxide Substances 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 239000003054 catalyst Substances 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005285804A JP4801407B2 (ja) | 2004-09-30 | 2005-09-30 | 表示装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004287935 | 2004-09-30 | ||
| JP2004287935 | 2004-09-30 | ||
| JP2005285804A JP4801407B2 (ja) | 2004-09-30 | 2005-09-30 | 表示装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006128666A JP2006128666A (ja) | 2006-05-18 |
| JP2006128666A5 true JP2006128666A5 (enrdf_load_stackoverflow) | 2007-11-08 |
| JP4801407B2 JP4801407B2 (ja) | 2011-10-26 |
Family
ID=36722960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005285804A Expired - Fee Related JP4801407B2 (ja) | 2004-09-30 | 2005-09-30 | 表示装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4801407B2 (enrdf_load_stackoverflow) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5041903B2 (ja) * | 2006-07-28 | 2012-10-03 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| KR101576813B1 (ko) * | 2007-08-17 | 2015-12-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| US9666719B2 (en) * | 2008-07-31 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| EP2515337B1 (en) | 2008-12-24 | 2016-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit and semiconductor device |
| KR101457837B1 (ko) * | 2009-06-30 | 2014-11-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작 방법 |
| KR101672072B1 (ko) * | 2009-09-04 | 2016-11-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| KR101108158B1 (ko) * | 2009-11-30 | 2012-01-31 | 삼성모바일디스플레이주식회사 | 유기 발광 표시장치 및 그 제조 방법 |
| KR101685716B1 (ko) | 2010-09-21 | 2016-12-12 | 가부시키가이샤 제이올레드 | 박막 트랜지스터 어레이 장치, 박막 트랜지스터 어레이 장치의 제조 방법 |
| CN102549636B (zh) | 2010-09-21 | 2016-08-03 | 株式会社日本有机雷特显示器 | 薄膜晶体管阵列装置、薄膜晶体管阵列装置的制造方法 |
| US8922464B2 (en) | 2011-05-11 | 2014-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device and driving method thereof |
| JP6306832B2 (ja) * | 2012-07-06 | 2018-04-04 | 株式会社半導体エネルギー研究所 | 半導体装置および半導体装置の作製方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3539821B2 (ja) * | 1995-03-27 | 2004-07-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4101340B2 (ja) * | 1997-12-12 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2000353666A (ja) * | 1999-06-11 | 2000-12-19 | Matsushita Electric Ind Co Ltd | 半導体薄膜およびその製造方法 |
| TW456048B (en) * | 2000-06-30 | 2001-09-21 | Hannstar Display Corp | Manufacturing method for polysilicon thin film transistor liquid crystal display panel |
| JP2002324808A (ja) * | 2001-01-19 | 2002-11-08 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP4741192B2 (ja) * | 2003-01-17 | 2011-08-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2005
- 2005-09-30 JP JP2005285804A patent/JP4801407B2/ja not_active Expired - Fee Related
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