JP4801407B2 - 表示装置の作製方法 - Google Patents

表示装置の作製方法 Download PDF

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Publication number
JP4801407B2
JP4801407B2 JP2005285804A JP2005285804A JP4801407B2 JP 4801407 B2 JP4801407 B2 JP 4801407B2 JP 2005285804 A JP2005285804 A JP 2005285804A JP 2005285804 A JP2005285804 A JP 2005285804A JP 4801407 B2 JP4801407 B2 JP 4801407B2
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JP
Japan
Prior art keywords
insulating film
electrode
forming
film
semiconductor film
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Expired - Fee Related
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JP2005285804A
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English (en)
Japanese (ja)
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JP2006128666A5 (enrdf_load_stackoverflow
JP2006128666A (ja
Inventor
舜平 山崎
慎志 前川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005285804A priority Critical patent/JP4801407B2/ja
Publication of JP2006128666A publication Critical patent/JP2006128666A/ja
Publication of JP2006128666A5 publication Critical patent/JP2006128666A5/ja
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Publication of JP4801407B2 publication Critical patent/JP4801407B2/ja
Expired - Fee Related legal-status Critical Current
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  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2005285804A 2004-09-30 2005-09-30 表示装置の作製方法 Expired - Fee Related JP4801407B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005285804A JP4801407B2 (ja) 2004-09-30 2005-09-30 表示装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004287935 2004-09-30
JP2004287935 2004-09-30
JP2005285804A JP4801407B2 (ja) 2004-09-30 2005-09-30 表示装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006128666A JP2006128666A (ja) 2006-05-18
JP2006128666A5 JP2006128666A5 (enrdf_load_stackoverflow) 2007-11-08
JP4801407B2 true JP4801407B2 (ja) 2011-10-26

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005285804A Expired - Fee Related JP4801407B2 (ja) 2004-09-30 2005-09-30 表示装置の作製方法

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JP (1) JP4801407B2 (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5041903B2 (ja) * 2006-07-28 2012-10-03 株式会社半導体エネルギー研究所 表示装置の作製方法
KR101576813B1 (ko) * 2007-08-17 2015-12-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US9666719B2 (en) * 2008-07-31 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP2515337B1 (en) 2008-12-24 2016-02-24 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
KR101457837B1 (ko) * 2009-06-30 2014-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
KR101672072B1 (ko) * 2009-09-04 2016-11-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR101108158B1 (ko) * 2009-11-30 2012-01-31 삼성모바일디스플레이주식회사 유기 발광 표시장치 및 그 제조 방법
KR101685716B1 (ko) 2010-09-21 2016-12-12 가부시키가이샤 제이올레드 박막 트랜지스터 어레이 장치, 박막 트랜지스터 어레이 장치의 제조 방법
CN102549636B (zh) 2010-09-21 2016-08-03 株式会社日本有机雷特显示器 薄膜晶体管阵列装置、薄膜晶体管阵列装置的制造方法
US8922464B2 (en) 2011-05-11 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device and driving method thereof
JP6306832B2 (ja) * 2012-07-06 2018-04-04 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3539821B2 (ja) * 1995-03-27 2004-07-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4101340B2 (ja) * 1997-12-12 2008-06-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000353666A (ja) * 1999-06-11 2000-12-19 Matsushita Electric Ind Co Ltd 半導体薄膜およびその製造方法
TW456048B (en) * 2000-06-30 2001-09-21 Hannstar Display Corp Manufacturing method for polysilicon thin film transistor liquid crystal display panel
JP2002324808A (ja) * 2001-01-19 2002-11-08 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4741192B2 (ja) * 2003-01-17 2011-08-03 株式会社半導体エネルギー研究所 半導体装置の作製方法

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Publication number Publication date
JP2006128666A (ja) 2006-05-18

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