JP2006128665A5 - - Google Patents
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- Publication number
- JP2006128665A5 JP2006128665A5 JP2005285796A JP2005285796A JP2006128665A5 JP 2006128665 A5 JP2006128665 A5 JP 2006128665A5 JP 2005285796 A JP2005285796 A JP 2005285796A JP 2005285796 A JP2005285796 A JP 2005285796A JP 2006128665 A5 JP2006128665 A5 JP 2006128665A5
- Authority
- JP
- Japan
- Prior art keywords
- forming
- electrode
- semiconductor film
- gate
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 76
- 238000005530 etching Methods 0.000 claims 40
- 239000010410 layer Substances 0.000 claims 40
- 230000003197 catalytic effect Effects 0.000 claims 35
- 239000004973 liquid crystal related substance Substances 0.000 claims 15
- 238000004519 manufacturing process Methods 0.000 claims 15
- 238000000034 method Methods 0.000 claims 15
- 239000012535 impurity Substances 0.000 claims 11
- 239000011241 protective layer Substances 0.000 claims 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 229910017052 cobalt Inorganic materials 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- 229910052735 hafnium Inorganic materials 0.000 claims 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052758 niobium Inorganic materials 0.000 claims 2
- 239000010955 niobium Substances 0.000 claims 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 229910052720 vanadium Inorganic materials 0.000 claims 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 2
- 239000011787 zinc oxide Substances 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 239000003054 catalyst Substances 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005285796A JP4801406B2 (ja) | 2004-09-30 | 2005-09-30 | 液晶表示装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004287879 | 2004-09-30 | ||
| JP2004287879 | 2004-09-30 | ||
| JP2005285796A JP4801406B2 (ja) | 2004-09-30 | 2005-09-30 | 液晶表示装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006128665A JP2006128665A (ja) | 2006-05-18 |
| JP2006128665A5 true JP2006128665A5 (enrdf_load_stackoverflow) | 2007-11-08 |
| JP4801406B2 JP4801406B2 (ja) | 2011-10-26 |
Family
ID=36722959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005285796A Expired - Fee Related JP4801406B2 (ja) | 2004-09-30 | 2005-09-30 | 液晶表示装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4801406B2 (enrdf_load_stackoverflow) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2038684B1 (en) | 2006-05-31 | 2016-03-16 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| CN101479777B (zh) | 2006-05-31 | 2011-07-06 | 株式会社半导体能源研究所 | 显示设备和电子装置 |
| JP5148170B2 (ja) * | 2006-05-31 | 2013-02-20 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP5172178B2 (ja) * | 2007-03-15 | 2013-03-27 | 三菱電機株式会社 | 薄膜トランジスタ、それを用いた表示装置、及びそれらの製造方法 |
| JP5104057B2 (ja) * | 2007-06-21 | 2012-12-19 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| JP5377940B2 (ja) * | 2007-12-03 | 2013-12-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI626744B (zh) * | 2008-07-31 | 2018-06-11 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| EP2172804B1 (en) * | 2008-10-03 | 2016-05-11 | Semiconductor Energy Laboratory Co, Ltd. | Display device |
| WO2010038820A1 (en) | 2008-10-03 | 2010-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| JP5587591B2 (ja) * | 2008-11-07 | 2014-09-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI585955B (zh) * | 2008-11-28 | 2017-06-01 | 半導體能源研究所股份有限公司 | 光感測器及顯示裝置 |
| CN105513644B (zh) * | 2009-09-24 | 2019-10-15 | 株式会社半导体能源研究所 | 驱动器电路、包括驱动器电路的显示设备以及包括显示设备的电子电器 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3539821B2 (ja) * | 1995-03-27 | 2004-07-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4101340B2 (ja) * | 1997-12-12 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2000353666A (ja) * | 1999-06-11 | 2000-12-19 | Matsushita Electric Ind Co Ltd | 半導体薄膜およびその製造方法 |
| TW456048B (en) * | 2000-06-30 | 2001-09-21 | Hannstar Display Corp | Manufacturing method for polysilicon thin film transistor liquid crystal display panel |
| JP2002324808A (ja) * | 2001-01-19 | 2002-11-08 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP4741192B2 (ja) * | 2003-01-17 | 2011-08-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2005
- 2005-09-30 JP JP2005285796A patent/JP4801406B2/ja not_active Expired - Fee Related
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