JP2006121062A5 - - Google Patents

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Publication number
JP2006121062A5
JP2006121062A5 JP2005276315A JP2005276315A JP2006121062A5 JP 2006121062 A5 JP2006121062 A5 JP 2006121062A5 JP 2005276315 A JP2005276315 A JP 2005276315A JP 2005276315 A JP2005276315 A JP 2005276315A JP 2006121062 A5 JP2006121062 A5 JP 2006121062A5
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JP
Japan
Prior art keywords
conductive layer
insulating layer
layer
transistor
semiconductor device
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Application number
JP2005276315A
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English (en)
Japanese (ja)
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JP4749102B2 (ja
JP2006121062A (ja
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Publication date
Application filed filed Critical
Priority to JP2005276315A priority Critical patent/JP4749102B2/ja
Priority claimed from JP2005276315A external-priority patent/JP4749102B2/ja
Publication of JP2006121062A publication Critical patent/JP2006121062A/ja
Publication of JP2006121062A5 publication Critical patent/JP2006121062A5/ja
Application granted granted Critical
Publication of JP4749102B2 publication Critical patent/JP4749102B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005276315A 2004-09-24 2005-09-22 半導体装置の作製方法 Expired - Fee Related JP4749102B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005276315A JP4749102B2 (ja) 2004-09-24 2005-09-22 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004277533 2004-09-24
JP2004277533 2004-09-24
JP2005276315A JP4749102B2 (ja) 2004-09-24 2005-09-22 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006121062A JP2006121062A (ja) 2006-05-11
JP2006121062A5 true JP2006121062A5 (enExample) 2007-01-25
JP4749102B2 JP4749102B2 (ja) 2011-08-17

Family

ID=36538603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005276315A Expired - Fee Related JP4749102B2 (ja) 2004-09-24 2005-09-22 半導体装置の作製方法

Country Status (1)

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JP (1) JP4749102B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7736964B2 (en) 2004-11-22 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method for manufacturing the same
JP5072217B2 (ja) * 2004-11-22 2012-11-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN101385039B (zh) * 2006-03-15 2012-03-21 株式会社半导体能源研究所 半导体器件
JP5581106B2 (ja) 2009-04-27 2014-08-27 株式会社半導体エネルギー研究所 半導体装置の作製方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4244120B2 (ja) * 2001-06-20 2009-03-25 株式会社半導体エネルギー研究所 発光装置及びその作製方法
JP4671600B2 (ja) * 2002-12-27 2011-04-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2004247373A (ja) * 2003-02-12 2004-09-02 Semiconductor Energy Lab Co Ltd 半導体装置

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