JP2006117980A5 - - Google Patents

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Publication number
JP2006117980A5
JP2006117980A5 JP2004305204A JP2004305204A JP2006117980A5 JP 2006117980 A5 JP2006117980 A5 JP 2006117980A5 JP 2004305204 A JP2004305204 A JP 2004305204A JP 2004305204 A JP2004305204 A JP 2004305204A JP 2006117980 A5 JP2006117980 A5 JP 2006117980A5
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JP
Japan
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acid
bismuth
tin
anode
acids
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JP2004305204A
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English (en)
Japanese (ja)
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JP2006117980A (ja
JP4605359B2 (ja
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Priority claimed from JP2004305204A external-priority patent/JP4605359B2/ja
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Publication of JP2006117980A5 publication Critical patent/JP2006117980A5/ja
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JP2004305204A 2004-10-20 2004-10-20 鉛フリーの酸性スズ−ビスマス系合金電気メッキ浴 Active JP4605359B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004305204A JP4605359B2 (ja) 2004-10-20 2004-10-20 鉛フリーの酸性スズ−ビスマス系合金電気メッキ浴

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004305204A JP4605359B2 (ja) 2004-10-20 2004-10-20 鉛フリーの酸性スズ−ビスマス系合金電気メッキ浴

Publications (3)

Publication Number Publication Date
JP2006117980A JP2006117980A (ja) 2006-05-11
JP2006117980A5 true JP2006117980A5 (ko) 2008-07-10
JP4605359B2 JP4605359B2 (ja) 2011-01-05

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Family Applications (1)

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JP2004305204A Active JP4605359B2 (ja) 2004-10-20 2004-10-20 鉛フリーの酸性スズ−ビスマス系合金電気メッキ浴

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JP (1) JP4605359B2 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004034427A2 (en) 2002-10-08 2004-04-22 Honeywell International Inc. Semiconductor packages, lead-containing solders and anodes and methods of removing alpha-emitters from materials
DE102005016819B4 (de) * 2005-04-12 2009-10-01 Dr.-Ing. Max Schlötter GmbH & Co KG Elektrolyt, Verfahren zur Abscheidung von Zinn-Wismut-Legierungsschichten und Verwendung des Elektrolyten
EP3181656B1 (en) * 2008-01-09 2018-12-12 Akzo Nobel Chemicals International B.V. Acidic aqueous solution containing a chelating agent
EP2221396A1 (en) * 2008-12-31 2010-08-25 Rohm and Haas Electronic Materials LLC Lead-Free Tin Alloy Electroplating Compositions and Methods
CN101899691B (zh) * 2010-07-16 2012-05-23 施吉连 一种在微波高频电路板上电镀锡铈铋合金的方法
US9850588B2 (en) * 2015-09-09 2017-12-26 Rohm And Haas Electronic Materials Llc Bismuth electroplating baths and methods of electroplating bismuth on a substrate
KR102617125B1 (ko) * 2021-12-24 2023-12-27 주식회사 호진플라텍 저온 솔더를 위한 인듐-비스무스 합금용 전기 도금액
KR102617129B1 (ko) * 2022-11-23 2023-12-27 주식회사 호진플라텍 비스무스 치환 방지 성능이 향상된 저온 솔더를 위한 인듐-비스무스 합금용 전기 도금액

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0663110B2 (ja) * 1988-09-22 1994-08-17 上村工業株式会社 ビスマス―錫合金電気のめっき浴
JP2819180B2 (ja) * 1990-02-22 1998-10-30 信康 土肥 すず―鉛―ビスマス合金めっき浴
JPH08225985A (ja) * 1995-02-15 1996-09-03 Okuno Chem Ind Co Ltd ビスマス−スズ合金めっき浴
JPH1025595A (ja) * 1996-07-12 1998-01-27 Ishihara Chem Co Ltd スズ及びスズ合金めっき浴
US6176996B1 (en) * 1997-10-30 2001-01-23 Sungsoo Moon Tin alloy plating compositions
JP3871013B2 (ja) * 1998-11-05 2007-01-24 上村工業株式会社 錫−銅合金電気めっき浴及びそれを使用するめっき方法
JP3368860B2 (ja) * 1999-02-01 2003-01-20 上村工業株式会社 電気錫合金めっき方法及び電気錫合金めっき装置
JP2000265294A (ja) * 1999-03-15 2000-09-26 Matsushita Electric Ind Co Ltd 錫及び錫合金めっき浴、めっき皮膜及び半導体装置用のリードフレーム
JP2001172791A (ja) * 1999-12-16 2001-06-26 Ishihara Chem Co Ltd スズ−銅系合金メッキ浴、並びに当該メッキ浴によりスズ−銅系合金皮膜を形成した電子部品
JP3871018B2 (ja) * 2000-06-23 2007-01-24 上村工業株式会社 錫−銅合金電気めっき浴及びそれを使用するめっき方法
JP2002339095A (ja) * 2001-05-16 2002-11-27 Dr Ing Max Schloetter Gmbh & Co Kg スズ−ビスマス−銅合金の析出方法
JP2004183091A (ja) * 2002-07-25 2004-07-02 Shinriyou Denshi Kk 錫−銀−銅含有めっき液、電解めっき方法、錫−銀−銅含有めっき被膜、並びにこのめっき被膜を使用したはんだ付け方法
JP4441726B2 (ja) * 2003-01-24 2010-03-31 石原薬品株式会社 スズ又はスズ合金の脂肪族スルホン酸メッキ浴の製造方法

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