JP2006060568A - 局部発振回路 - Google Patents
局部発振回路 Download PDFInfo
- Publication number
- JP2006060568A JP2006060568A JP2004240989A JP2004240989A JP2006060568A JP 2006060568 A JP2006060568 A JP 2006060568A JP 2004240989 A JP2004240989 A JP 2004240989A JP 2004240989 A JP2004240989 A JP 2004240989A JP 2006060568 A JP2006060568 A JP 2006060568A
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- JP
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- Prior art keywords
- oscillation
- terminal
- circuit
- transistor
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1209—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier having two current paths operating in a differential manner and a current source or degeneration circuit in common to both paths, e.g. a long-tailed pair.
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
- H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/003—Circuit elements of oscillators
- H03B2200/0048—Circuit elements of oscillators including measures to switch the frequency band, e.g. by harmonic selection
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
- Superheterodyne Receivers (AREA)
Abstract
【解決手段】 発振トランジスタ11、12を内部に構成すると共に、発振トランジスタ11、12のベースとコレクタとにそれぞれ結合された第1及び第2の端子10a、10bを有する集積回路10と、集積回路10の外部に設けられ、第1及び第2の端子10a、10b間に結合される共振回路30とを備え、集積回路10内には各端子10a、10bにカソードが接続され、アノードが接地された静電破壊防止用の保護ダイオード19、20を設け、保護ダイオード19、20のカソードには、VHFローバンド受信時に電圧を印加せず、ハイバンド受信時に逆バイアス用の電圧を印加した。
【選択図】 図1
Description
10a:第1の端子
10b:第2の端子
10c:第3の端子
11、12:発振トランジスタ
13:定電流源
14〜17結合コンデンサ
18:第1の抵抗
19、20:保護ダイオード
21:第2の抵抗
22:スイッチトランジスタ
23:給電抵抗
24:切替手段
30:共振回路
30a:インダクタンス素子
30b:バラクタダイオード
30c:コンデンサ
31:結合用バラクタダイオード
32:直流カットコンデンサ
Claims (4)
- 発振トランジスタを内部に構成すると共に、前記発振トランジスタのベースとコレクタとにそれぞれ結合された第1及び第2の端子を有する集積回路と、前記集積回路の外部に設けられ、前記第1及び第2の端子間に結合される共振回路とを備え、前記集積回路内には前記各端子にカソードが接続され、アノードが接地された静電破壊防止用の保護ダイオードを設け、前記保護ダイオードのカソードには、VHFローバンド受信時に電圧を印加せず、ハイバンド受信時に逆バイアス用の電圧を印加したことを特徴とする局部発振回路。
- 前記共振回路の一端を結合用のバラクタダイオードを介して前記第1の端子に結合すると共に、他端を前記第2の端子に結合し、前記バラクタダイオードのアノードを直流的に接地し、カソードには、VHFローバンド受信時に電圧を印加せず、ハイバンド受信時に逆バイアス用の電圧を印加したことを特徴とする請求項1に記載の局部発振回路。
- 前記集積回路内には前記第2の端子に一端が接続されると共に、前記共振回路に直列に介挿された第1の抵抗と、前記第1の抵抗の他端にコレクタが接続されると共に、エミッタが接地されたスイッチトランジスタと、コレクタと前記第1の端子との間に接続された第2の抵抗とを設け、前記スイッチトランジスタのコレクタに給電抵抗を介して電源電圧を印加し、前記スイッチトランジスタをハイバンド受信時にオフ、ローバンド受信時にオンに切り替えたことを特徴とする請求項2に記載の局部発振回路。
- 前記発振トランジスタは第1及び第2の発振トランジスタを有し、前記第1の発振トランジスタのベースと前記第2の発振トランジスタのコレクタをそれぞれ第1の結合コンデンサ、第2の結合コンデンサを介して前記第1の端子に結合し、前記第1の発振トランジスタのコレクタと前記第2の発振トランジスタのベースをそれぞれ第3の結合コンデンサ、第4の結合コンデンサを介して前記第1の抵抗の他端に結合したことを特徴とする請求項3に記載の局部発振回路。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004240989A JP4365749B2 (ja) | 2004-08-20 | 2004-08-20 | 局部発振回路 |
US11/204,118 US7312672B2 (en) | 2004-08-20 | 2005-08-15 | Local oscillating circuit for receiving high-band and low-band signal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004240989A JP4365749B2 (ja) | 2004-08-20 | 2004-08-20 | 局部発振回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006060568A true JP2006060568A (ja) | 2006-03-02 |
JP4365749B2 JP4365749B2 (ja) | 2009-11-18 |
Family
ID=35909076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004240989A Expired - Fee Related JP4365749B2 (ja) | 2004-08-20 | 2004-08-20 | 局部発振回路 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7312672B2 (ja) |
JP (1) | JP4365749B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012090098A (ja) * | 2010-10-20 | 2012-05-10 | Lapis Semiconductor Co Ltd | 発振回路 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ITMI20090125A1 (it) * | 2009-02-03 | 2010-08-04 | Milano Politecnico | Oscillatore elettronico con ridotto rumore di fase |
US9071194B1 (en) | 2013-06-04 | 2015-06-30 | Pmc-Sierra Us, Inc. | Electro-mechanical oscillator and method for generating a signal |
US9413341B1 (en) | 2013-12-23 | 2016-08-09 | Microsemi Storage Solutions (U.S.), Inc. | Electro-mechanical voltage-controlled oscillator and a method for generating tunable balanced oscillations |
US9515605B1 (en) | 2015-08-25 | 2016-12-06 | Microsemi Storage Solutions (U.S.), Inc. | Variable gain electro-mechanical oscillator and method for starting balanced oscillations |
US9490746B1 (en) | 2015-08-27 | 2016-11-08 | Maxlinear Asia Singapore PTE LTD | Voltage-controlled oscillator and a method for tuning oscillations |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3105078B2 (ja) | 1992-06-12 | 2000-10-30 | 株式会社東芝 | 半導体記憶装置 |
JP3930307B2 (ja) | 2001-12-11 | 2007-06-13 | アルプス電気株式会社 | 発振器用集積回路 |
-
2004
- 2004-08-20 JP JP2004240989A patent/JP4365749B2/ja not_active Expired - Fee Related
-
2005
- 2005-08-15 US US11/204,118 patent/US7312672B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012090098A (ja) * | 2010-10-20 | 2012-05-10 | Lapis Semiconductor Co Ltd | 発振回路 |
Also Published As
Publication number | Publication date |
---|---|
JP4365749B2 (ja) | 2009-11-18 |
US20060038629A1 (en) | 2006-02-23 |
US7312672B2 (en) | 2007-12-25 |
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