JP2006060044A5 - - Google Patents
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- JP2006060044A5 JP2006060044A5 JP2004240838A JP2004240838A JP2006060044A5 JP 2006060044 A5 JP2006060044 A5 JP 2006060044A5 JP 2004240838 A JP2004240838 A JP 2004240838A JP 2004240838 A JP2004240838 A JP 2004240838A JP 2006060044 A5 JP2006060044 A5 JP 2006060044A5
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Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004240838A JP2006060044A (ja) | 2004-08-20 | 2004-08-20 | 磁気抵抗効果素子の製造方法 |
US11/161,675 US7652852B2 (en) | 2004-08-20 | 2005-08-11 | Magnetoresistance effect device and a preform therefor |
US12/117,753 US7727409B2 (en) | 2004-08-20 | 2008-05-09 | Magnetoresistance effect device and method of production thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004240838A JP2006060044A (ja) | 2004-08-20 | 2004-08-20 | 磁気抵抗効果素子の製造方法 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008290569A Division JP4448185B2 (ja) | 2008-11-13 | 2008-11-13 | 磁気抵抗効果素子の製造方法 |
JP2008290578A Division JP2009081451A (ja) | 2008-11-13 | 2008-11-13 | 磁気抵抗効果素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006060044A JP2006060044A (ja) | 2006-03-02 |
JP2006060044A5 true JP2006060044A5 (ja) | 2006-04-20 |
Family
ID=35908860
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004240838A Pending JP2006060044A (ja) | 2004-08-20 | 2004-08-20 | 磁気抵抗効果素子の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (2) | US7652852B2 (ja) |
JP (1) | JP2006060044A (ja) |
Families Citing this family (23)
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JP2006060044A (ja) * | 2004-08-20 | 2006-03-02 | Canon Anelva Corp | 磁気抵抗効果素子の製造方法 |
US7838436B2 (en) * | 2006-09-28 | 2010-11-23 | Magic Technologies, Inc. | Bottom electrode for MRAM device and method to fabricate it |
JPWO2008129605A1 (ja) * | 2007-03-30 | 2010-07-22 | キヤノンアネルバ株式会社 | 磁性素子の製造法 |
US8679301B2 (en) * | 2007-08-01 | 2014-03-25 | HGST Netherlands B.V. | Repeatability for RF MgO TMR barrier layer process by implementing Ti pasting |
JP2009094104A (ja) | 2007-10-03 | 2009-04-30 | Toshiba Corp | 磁気抵抗素子 |
JPWO2009084445A1 (ja) * | 2007-12-27 | 2011-05-19 | キヤノンアネルバ株式会社 | ドライエッチング方法、磁気抵抗効果素子とその製造方法及び製造装置 |
JP2009295737A (ja) * | 2008-06-04 | 2009-12-17 | Renesas Technology Corp | 半導体装置及び半導体装置の製造方法 |
US8138561B2 (en) * | 2008-09-18 | 2012-03-20 | Magic Technologies, Inc. | Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM |
CN102224610A (zh) * | 2009-01-21 | 2011-10-19 | 佳能安内华股份有限公司 | 磁性膜加工室的清洁方法、磁性器件的制造方法及基板处理设备 |
JP2010182824A (ja) * | 2009-02-04 | 2010-08-19 | Toshiba Corp | 磁気ランダムアクセスメモリの製造方法及び混載メモリの製造方法 |
JP5169893B2 (ja) * | 2009-02-06 | 2013-03-27 | 富士通株式会社 | 成型加工品の製造方法及び記憶媒体の製造方法 |
JP5782715B2 (ja) * | 2011-01-07 | 2015-09-24 | ソニー株式会社 | 記憶素子及び記憶装置 |
JP5768498B2 (ja) * | 2011-05-23 | 2015-08-26 | ソニー株式会社 | 記憶素子、記憶装置 |
JP5689967B2 (ja) * | 2011-06-24 | 2015-03-25 | キヤノンアネルバ株式会社 | 磁気抵抗効果素子の製造方法 |
JP5914007B2 (ja) * | 2012-01-20 | 2016-05-11 | 昭和電工株式会社 | 磁気記録媒体の製造方法 |
JP2014052190A (ja) * | 2012-09-04 | 2014-03-20 | Ulvac Japan Ltd | 抵抗測定方法 |
JP5919183B2 (ja) | 2012-12-17 | 2016-05-18 | 株式会社日立ハイテクノロジーズ | プラズマエッチング方法 |
JP5635666B2 (ja) * | 2013-10-24 | 2014-12-03 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
CN105470384A (zh) * | 2015-12-31 | 2016-04-06 | 江苏森尼克电子科技有限公司 | 用于InSb磁敏器件的薄膜材料结构及制造工艺 |
JP2017212330A (ja) * | 2016-05-25 | 2017-11-30 | 富士通株式会社 | 磁気記憶素子の製造方法および磁気記憶素子 |
WO2018052062A1 (ja) * | 2016-09-14 | 2018-03-22 | Tdk株式会社 | 磁気抵抗効果デバイスおよび磁気抵抗効果モジュール |
US10939756B2 (en) | 2018-06-22 | 2021-03-09 | Product Miniature, Inc. | Modular shelf system |
US11009570B2 (en) * | 2018-11-16 | 2021-05-18 | Samsung Electronics Co., Ltd. | Hybrid oxide/metal cap layer for boron-free free layer |
Family Cites Families (39)
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US4421785A (en) * | 1980-08-18 | 1983-12-20 | Sperry Corporation | Superconductive tunnel junction device and method of manufacture |
JPS59168950A (ja) * | 1983-03-17 | 1984-09-22 | Ricoh Co Ltd | 光磁気記録媒体 |
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JP3131595B2 (ja) | 1997-09-22 | 2001-02-05 | 科学技術庁金属材料技術研究所長 | 反応性イオンエッチング用のマスク |
US6919168B2 (en) * | 1998-01-13 | 2005-07-19 | Applied Materials, Inc. | Masking methods and etching sequences for patterning electrodes of high density RAM capacitors |
US6303218B1 (en) * | 1998-03-20 | 2001-10-16 | Kabushiki Kaisha Toshiba | Multi-layered thin-film functional device and magnetoresistance effect element |
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JP3959881B2 (ja) | 1999-02-08 | 2007-08-15 | Tdk株式会社 | 磁気抵抗効果センサの製造方法 |
US6462919B1 (en) * | 1999-04-28 | 2002-10-08 | Seagate Technology Llc | Spin valve sensor with exchange tabs |
JP2001028442A (ja) | 1999-05-12 | 2001-01-30 | Matsushita Electric Ind Co Ltd | 薄膜デバイス及び薄膜デバイスの製造方法 |
JP3433721B2 (ja) | 2000-03-28 | 2003-08-04 | ティーディーケイ株式会社 | ドライエッチング方法及び微細加工方法 |
JP4605554B2 (ja) | 2000-07-25 | 2011-01-05 | 独立行政法人物質・材料研究機構 | ドライエッチング用マスク材 |
DE10042235A1 (de) * | 2000-08-28 | 2002-04-18 | Infineon Technologies Ag | Verfahren zur Herstellung einer elektrisch leitenden Verbindung |
JP2002109707A (ja) | 2000-09-29 | 2002-04-12 | Toshiba Corp | ヨーク型磁気再生ヘッドおよびその製造方法ならびに磁気ディスク装置 |
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US6709767B2 (en) * | 2001-07-31 | 2004-03-23 | Hitachi Global Storage Technologies Netherlands B.V. | In-situ oxidized films for use as cap and gap layers in a spin-valve sensor and methods of manufacture |
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JP3843837B2 (ja) | 2001-12-28 | 2006-11-08 | Tdk株式会社 | スピンバルブ磁気抵抗効果センサの製造方法及び薄膜磁気ヘッドの製造方法 |
US6821907B2 (en) * | 2002-03-06 | 2004-11-23 | Applied Materials Inc | Etching methods for a magnetic memory cell stack |
US6911346B2 (en) * | 2002-04-03 | 2005-06-28 | Applied Materials, Inc. | Method of etching a magnetic material |
US7009235B2 (en) * | 2003-11-10 | 2006-03-07 | Unity Semiconductor Corporation | Conductive memory stack with non-uniform width |
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US6872467B2 (en) * | 2002-11-12 | 2005-03-29 | Nve Corporation | Magnetic field sensor with augmented magnetoresistive sensing layer |
US7105361B2 (en) * | 2003-01-06 | 2006-09-12 | Applied Materials, Inc. | Method of etching a magnetic material |
JP3822569B2 (ja) * | 2003-02-28 | 2006-09-20 | 株式会社東芝 | 半導体装置およびその製造方法 |
US6924519B2 (en) * | 2003-05-02 | 2005-08-02 | Kabushiki Kaisha Toshiba | Semiconductor device with perovskite capacitor |
US6812141B1 (en) * | 2003-07-01 | 2004-11-02 | Infineon Technologies Ag | Recessed metal lines for protective enclosure in integrated circuits |
US7041551B2 (en) * | 2003-09-30 | 2006-05-09 | Infineon Technologies Ag | Device and a method for forming a capacitor device |
US20050070043A1 (en) * | 2003-09-30 | 2005-03-31 | Koji Yamakawa | Semiconductor device and method for manufacturing the same |
US7446985B2 (en) * | 2003-12-19 | 2008-11-04 | Agency For Science Technology And Research | Epitaxial oxide cap layers for enhancing GMR performance |
US7190557B2 (en) * | 2004-04-14 | 2007-03-13 | Hitachi Global Storage Technologies Netherlands B.V. | Current-in-the-plane spin valve magnetoresistive sensor with dual metal oxide capping layers |
US7186658B2 (en) * | 2004-05-24 | 2007-03-06 | Winbond Electronics Corporation | Method and resulting structure for PCMO film to obtain etching rate and mask to selectively by inductively coupled plasma |
JP2006060044A (ja) | 2004-08-20 | 2006-03-02 | Canon Anelva Corp | 磁気抵抗効果素子の製造方法 |
JP2006093451A (ja) * | 2004-09-24 | 2006-04-06 | Toshiba Corp | 半導体装置 |
US7381343B2 (en) * | 2005-07-08 | 2008-06-03 | International Business Machines Corporation | Hard mask structure for patterning of materials |
-
2004
- 2004-08-20 JP JP2004240838A patent/JP2006060044A/ja active Pending
-
2005
- 2005-08-11 US US11/161,675 patent/US7652852B2/en not_active Expired - Fee Related
-
2008
- 2008-05-09 US US12/117,753 patent/US7727409B2/en not_active Expired - Fee Related