|
US3737824A
(en)
*
|
1972-08-11 |
1973-06-05 |
Nasa |
Twisted multifilament superconductor
|
|
US4421785A
(en)
*
|
1980-08-18 |
1983-12-20 |
Sperry Corporation |
Superconductive tunnel junction device and method of manufacture
|
|
JPS59168950A
(ja)
*
|
1983-03-17 |
1984-09-22 |
Ricoh Co Ltd |
光磁気記録媒体
|
|
US4499119A
(en)
*
|
1983-07-06 |
1985-02-12 |
Sperry Corporation |
Method of manufacturing super-conductive tunnel junction devices with precise junction area control
|
|
KR100239417B1
(ko)
*
|
1996-12-03 |
2000-01-15 |
김영환 |
반도체 소자의 커패시터 및 그의 제조방법
|
|
JP3131595B2
(ja)
|
1997-09-22 |
2001-02-05 |
科学技術庁金属材料技術研究所長 |
反応性イオンエッチング用のマスク
|
|
US6919168B2
(en)
*
|
1998-01-13 |
2005-07-19 |
Applied Materials, Inc. |
Masking methods and etching sequences for patterning electrodes of high density RAM capacitors
|
|
US6303218B1
(en)
*
|
1998-03-20 |
2001-10-16 |
Kabushiki Kaisha Toshiba |
Multi-layered thin-film functional device and magnetoresistance effect element
|
|
US6277760B1
(en)
*
|
1998-06-26 |
2001-08-21 |
Lg Electronics Inc. |
Method for fabricating ferroelectric capacitor
|
|
SG79292A1
(en)
*
|
1998-12-11 |
2001-03-20 |
Hitachi Ltd |
Semiconductor integrated circuit and its manufacturing method
|
|
US6483691B1
(en)
*
|
1999-02-04 |
2002-11-19 |
Rohm Co., Ltd. |
Capacitor and method for manufacturing the same
|
|
JP3959881B2
(ja)
|
1999-02-08 |
2007-08-15 |
Tdk株式会社 |
磁気抵抗効果センサの製造方法
|
|
US6462919B1
(en)
*
|
1999-04-28 |
2002-10-08 |
Seagate Technology Llc |
Spin valve sensor with exchange tabs
|
|
JP2001028442A
(ja)
|
1999-05-12 |
2001-01-30 |
Matsushita Electric Ind Co Ltd |
薄膜デバイス及び薄膜デバイスの製造方法
|
|
JP3433721B2
(ja)
|
2000-03-28 |
2003-08-04 |
ティーディーケイ株式会社 |
ドライエッチング方法及び微細加工方法
|
|
JP4605554B2
(ja)
|
2000-07-25 |
2011-01-05 |
独立行政法人物質・材料研究機構 |
ドライエッチング用マスク材
|
|
DE10042235A1
(de)
*
|
2000-08-28 |
2002-04-18 |
Infineon Technologies Ag |
Verfahren zur Herstellung einer elektrisch leitenden Verbindung
|
|
JP2002109707A
(ja)
|
2000-09-29 |
2002-04-12 |
Toshiba Corp |
ヨーク型磁気再生ヘッドおよびその製造方法ならびに磁気ディスク装置
|
|
US6518673B2
(en)
*
|
2001-06-15 |
2003-02-11 |
Trw Inc. |
Capacitor for signal propagation across ground plane boundaries in superconductor integrated circuits
|
|
US6709767B2
(en)
*
|
2001-07-31 |
2004-03-23 |
Hitachi Global Storage Technologies Netherlands B.V. |
In-situ oxidized films for use as cap and gap layers in a spin-valve sensor and methods of manufacture
|
|
JP2003198002A
(ja)
*
|
2001-12-25 |
2003-07-11 |
Fujitsu Ltd |
磁気抵抗効果膜および強磁性積層構造体
|
|
JP3843837B2
(ja)
|
2001-12-28 |
2006-11-08 |
Tdk株式会社 |
スピンバルブ磁気抵抗効果センサの製造方法及び薄膜磁気ヘッドの製造方法
|
|
US6821907B2
(en)
*
|
2002-03-06 |
2004-11-23 |
Applied Materials Inc |
Etching methods for a magnetic memory cell stack
|
|
US6911346B2
(en)
*
|
2002-04-03 |
2005-06-28 |
Applied Materials, Inc. |
Method of etching a magnetic material
|
|
US7009235B2
(en)
*
|
2003-11-10 |
2006-03-07 |
Unity Semiconductor Corporation |
Conductive memory stack with non-uniform width
|
|
JP2004146552A
(ja)
|
2002-10-24 |
2004-05-20 |
Fujitsu Ltd |
微細レジストパターンの形成方法
|
|
US6872467B2
(en)
*
|
2002-11-12 |
2005-03-29 |
Nve Corporation |
Magnetic field sensor with augmented magnetoresistive sensing layer
|
|
US7105361B2
(en)
*
|
2003-01-06 |
2006-09-12 |
Applied Materials, Inc. |
Method of etching a magnetic material
|
|
JP3822569B2
(ja)
*
|
2003-02-28 |
2006-09-20 |
株式会社東芝 |
半導体装置およびその製造方法
|
|
US6924519B2
(en)
*
|
2003-05-02 |
2005-08-02 |
Kabushiki Kaisha Toshiba |
Semiconductor device with perovskite capacitor
|
|
US6812141B1
(en)
*
|
2003-07-01 |
2004-11-02 |
Infineon Technologies Ag |
Recessed metal lines for protective enclosure in integrated circuits
|
|
US7041551B2
(en)
*
|
2003-09-30 |
2006-05-09 |
Infineon Technologies Ag |
Device and a method for forming a capacitor device
|
|
US20050070043A1
(en)
*
|
2003-09-30 |
2005-03-31 |
Koji Yamakawa |
Semiconductor device and method for manufacturing the same
|
|
US7446985B2
(en)
*
|
2003-12-19 |
2008-11-04 |
Agency For Science Technology And Research |
Epitaxial oxide cap layers for enhancing GMR performance
|
|
US7190557B2
(en)
*
|
2004-04-14 |
2007-03-13 |
Hitachi Global Storage Technologies Netherlands B.V. |
Current-in-the-plane spin valve magnetoresistive sensor with dual metal oxide capping layers
|
|
US7186658B2
(en)
*
|
2004-05-24 |
2007-03-06 |
Winbond Electronics Corporation |
Method and resulting structure for PCMO film to obtain etching rate and mask to selectively by inductively coupled plasma
|
|
JP2006060044A
(ja)
|
2004-08-20 |
2006-03-02 |
Canon Anelva Corp |
磁気抵抗効果素子の製造方法
|
|
JP2006093451A
(ja)
*
|
2004-09-24 |
2006-04-06 |
Toshiba Corp |
半導体装置
|
|
US7381343B2
(en)
*
|
2005-07-08 |
2008-06-03 |
International Business Machines Corporation |
Hard mask structure for patterning of materials
|