JP2006032930A5 - - Google Patents

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Publication number
JP2006032930A5
JP2006032930A5 JP2005174372A JP2005174372A JP2006032930A5 JP 2006032930 A5 JP2006032930 A5 JP 2006032930A5 JP 2005174372 A JP2005174372 A JP 2005174372A JP 2005174372 A JP2005174372 A JP 2005174372A JP 2006032930 A5 JP2006032930 A5 JP 2006032930A5
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JP
Japan
Prior art keywords
substrate
chamber
doping
ion
cross
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005174372A
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English (en)
Japanese (ja)
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JP2006032930A (ja
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Publication date
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Priority to JP2005174372A priority Critical patent/JP2006032930A/ja
Priority claimed from JP2005174372A external-priority patent/JP2006032930A/ja
Publication of JP2006032930A publication Critical patent/JP2006032930A/ja
Publication of JP2006032930A5 publication Critical patent/JP2006032930A5/ja
Withdrawn legal-status Critical Current

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JP2005174372A 2004-06-14 2005-06-14 ドーピング装置 Withdrawn JP2006032930A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005174372A JP2006032930A (ja) 2004-06-14 2005-06-14 ドーピング装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004176230 2004-06-14
JP2005174372A JP2006032930A (ja) 2004-06-14 2005-06-14 ドーピング装置

Publications (2)

Publication Number Publication Date
JP2006032930A JP2006032930A (ja) 2006-02-02
JP2006032930A5 true JP2006032930A5 (enExample) 2008-07-10

Family

ID=35898846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005174372A Withdrawn JP2006032930A (ja) 2004-06-14 2005-06-14 ドーピング装置

Country Status (1)

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JP (1) JP2006032930A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5520436B2 (ja) * 2007-05-15 2014-06-11 株式会社ジャパンディスプレイ 半導体膜の結晶化方法
JP2011129332A (ja) * 2009-12-17 2011-06-30 Nissin Ion Equipment Co Ltd イオンビーム照射装置
JP5077599B2 (ja) * 2010-04-28 2012-11-21 日新イオン機器株式会社 ビーム電流密度分布の調整目標設定方法及びイオン注入装置
JP5477652B2 (ja) * 2010-09-07 2014-04-23 日新イオン機器株式会社 イオン注入方法及びイオン注入装置
KR102470044B1 (ko) * 2016-05-13 2022-11-24 삼성디스플레이 주식회사 플렉서블 표시 장치 및 이의 제조 방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58140961A (ja) * 1982-02-17 1983-08-20 Hitachi Ltd ウエ−ハ搬送装置
JPH03262130A (ja) * 1990-03-13 1991-11-21 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPH05182923A (ja) * 1991-05-28 1993-07-23 Semiconductor Energy Lab Co Ltd レーザーアニール方法
JP3293039B2 (ja) * 1991-10-28 2002-06-17 カシオ計算機株式会社 薄膜トランジスタの製造方法
JPH05275693A (ja) * 1992-03-25 1993-10-22 Sanyo Electric Co Ltd Ｍｏｓ型ｆｅｔの製造方法
JP4036278B2 (ja) * 1992-03-26 2008-01-23 株式会社半導体エネルギー研究所 イオンドーピング装置
JP2664121B2 (ja) * 1993-02-23 1997-10-15 株式会社ジーティシー イオン注入装置
JP3326013B2 (ja) * 1994-07-14 2002-09-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH08162063A (ja) * 1994-12-06 1996-06-21 Mitsubishi Electric Corp イオン注入装置
US5793050A (en) * 1996-02-16 1998-08-11 Eaton Corporation Ion implantation system for implanting workpieces
JP3265227B2 (ja) * 1996-05-15 2002-03-11 株式会社半導体エネルギー研究所 ドーピング装置およびドーピング処理方法
US5898179A (en) * 1997-09-10 1999-04-27 Orion Equipment, Inc. Method and apparatus for controlling a workpiece in a vacuum chamber
JP2003045993A (ja) * 2001-07-31 2003-02-14 Hitachi Ltd 半導体集積回路装置の製造方法
JP2005174871A (ja) * 2003-12-15 2005-06-30 Mitsui Eng & Shipbuild Co Ltd イオン注入装置

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