JP2007163640A5 - - Google Patents

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Publication number
JP2007163640A5
JP2007163640A5 JP2005357469A JP2005357469A JP2007163640A5 JP 2007163640 A5 JP2007163640 A5 JP 2007163640A5 JP 2005357469 A JP2005357469 A JP 2005357469A JP 2005357469 A JP2005357469 A JP 2005357469A JP 2007163640 A5 JP2007163640 A5 JP 2007163640A5
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JP
Japan
Prior art keywords
ion beam
substrate
opening
film transistor
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005357469A
Other languages
English (en)
Japanese (ja)
Other versions
JP4901203B2 (ja
JP2007163640A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005357469A priority Critical patent/JP4901203B2/ja
Priority claimed from JP2005357469A external-priority patent/JP4901203B2/ja
Publication of JP2007163640A publication Critical patent/JP2007163640A/ja
Publication of JP2007163640A5 publication Critical patent/JP2007163640A5/ja
Application granted granted Critical
Publication of JP4901203B2 publication Critical patent/JP4901203B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005357469A 2005-12-12 2005-12-12 イオンビームの照射方法及び薄膜トランジスタをもつ基板の製造装置 Expired - Fee Related JP4901203B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005357469A JP4901203B2 (ja) 2005-12-12 2005-12-12 イオンビームの照射方法及び薄膜トランジスタをもつ基板の製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005357469A JP4901203B2 (ja) 2005-12-12 2005-12-12 イオンビームの照射方法及び薄膜トランジスタをもつ基板の製造装置

Publications (3)

Publication Number Publication Date
JP2007163640A JP2007163640A (ja) 2007-06-28
JP2007163640A5 true JP2007163640A5 (enExample) 2010-02-25
JP4901203B2 JP4901203B2 (ja) 2012-03-21

Family

ID=38246625

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005357469A Expired - Fee Related JP4901203B2 (ja) 2005-12-12 2005-12-12 イオンビームの照射方法及び薄膜トランジスタをもつ基板の製造装置

Country Status (1)

Country Link
JP (1) JP4901203B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4530032B2 (ja) * 2007-11-29 2010-08-25 日新イオン機器株式会社 イオンビーム照射方法およびイオンビーム照射装置
JP2009152002A (ja) * 2007-12-19 2009-07-09 Nissin Ion Equipment Co Ltd イオンビーム照射装置
US8900982B2 (en) * 2009-04-08 2014-12-02 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate
US9076914B2 (en) * 2009-04-08 2015-07-07 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate
US9006688B2 (en) * 2009-04-08 2015-04-14 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate using a mask
JP5071499B2 (ja) * 2010-03-16 2012-11-14 日新イオン機器株式会社 イオンビーム照射方法およびイオンビーム照射装置
JP5311681B2 (ja) * 2010-05-26 2013-10-09 日新イオン機器株式会社 イオン注入装置
US8461556B2 (en) 2010-09-08 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Using beam blockers to perform a patterned implant of a workpiece
JP6028515B2 (ja) * 2012-10-18 2016-11-16 日新イオン機器株式会社 イオンビーム照射装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11339711A (ja) * 1998-05-29 1999-12-10 Ulvac Corp イオン注入装置
JP4553076B2 (ja) * 1998-09-24 2010-09-29 ソニー株式会社 半導体装置の製造方法
JP2003249189A (ja) * 2002-02-26 2003-09-05 Hitoshi Mikami イオン注入法
JP2004311618A (ja) * 2003-04-04 2004-11-04 Toshiba Corp レーザアニール方法とその装置、マスクならびに表示装置の製造方法
JP2005294584A (ja) * 2004-03-31 2005-10-20 Eudyna Devices Inc 半導体装置および不純物導入用マスクならびに半導体装置の製造方法

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