JP4901203B2 - イオンビームの照射方法及び薄膜トランジスタをもつ基板の製造装置 - Google Patents

イオンビームの照射方法及び薄膜トランジスタをもつ基板の製造装置 Download PDF

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Publication number
JP4901203B2
JP4901203B2 JP2005357469A JP2005357469A JP4901203B2 JP 4901203 B2 JP4901203 B2 JP 4901203B2 JP 2005357469 A JP2005357469 A JP 2005357469A JP 2005357469 A JP2005357469 A JP 2005357469A JP 4901203 B2 JP4901203 B2 JP 4901203B2
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Prior art keywords
ion beam
substrate
ion
region
opening
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Expired - Fee Related
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JP2005357469A
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Japanese (ja)
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JP2007163640A (ja
JP2007163640A5 (enExample
Inventor
篤 武田
誠二 筒井
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Japan Display Central Inc
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Toshiba Mobile Display Co Ltd
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Priority to JP2005357469A priority Critical patent/JP4901203B2/ja
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Publication of JP2007163640A5 publication Critical patent/JP2007163640A5/ja
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JP2005357469A 2005-12-12 2005-12-12 イオンビームの照射方法及び薄膜トランジスタをもつ基板の製造装置 Expired - Fee Related JP4901203B2 (ja)

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JP2005357469A JP4901203B2 (ja) 2005-12-12 2005-12-12 イオンビームの照射方法及び薄膜トランジスタをもつ基板の製造装置

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JP2005357469A JP4901203B2 (ja) 2005-12-12 2005-12-12 イオンビームの照射方法及び薄膜トランジスタをもつ基板の製造装置

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JP2007163640A JP2007163640A (ja) 2007-06-28
JP2007163640A5 JP2007163640A5 (enExample) 2010-02-25
JP4901203B2 true JP4901203B2 (ja) 2012-03-21

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4530032B2 (ja) * 2007-11-29 2010-08-25 日新イオン機器株式会社 イオンビーム照射方法およびイオンビーム照射装置
JP2009152002A (ja) * 2007-12-19 2009-07-09 Nissin Ion Equipment Co Ltd イオンビーム照射装置
US9006688B2 (en) * 2009-04-08 2015-04-14 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate using a mask
US9076914B2 (en) 2009-04-08 2015-07-07 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate
US8900982B2 (en) 2009-04-08 2014-12-02 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate
JP5071499B2 (ja) * 2010-03-16 2012-11-14 日新イオン機器株式会社 イオンビーム照射方法およびイオンビーム照射装置
JP5311681B2 (ja) * 2010-05-26 2013-10-09 日新イオン機器株式会社 イオン注入装置
US8461556B2 (en) 2010-09-08 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Using beam blockers to perform a patterned implant of a workpiece
JP6028515B2 (ja) * 2012-10-18 2016-11-16 日新イオン機器株式会社 イオンビーム照射装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11339711A (ja) * 1998-05-29 1999-12-10 Ulvac Corp イオン注入装置
JP4553076B2 (ja) * 1998-09-24 2010-09-29 ソニー株式会社 半導体装置の製造方法
JP2003249189A (ja) * 2002-02-26 2003-09-05 Hitoshi Mikami イオン注入法
JP2004311618A (ja) * 2003-04-04 2004-11-04 Toshiba Corp レーザアニール方法とその装置、マスクならびに表示装置の製造方法
JP2005294584A (ja) * 2004-03-31 2005-10-20 Eudyna Devices Inc 半導体装置および不純物導入用マスクならびに半導体装置の製造方法

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