JP5077599B2 - ビーム電流密度分布の調整目標設定方法及びイオン注入装置 - Google Patents
ビーム電流密度分布の調整目標設定方法及びイオン注入装置 Download PDFInfo
- Publication number
- JP5077599B2 JP5077599B2 JP2010103203A JP2010103203A JP5077599B2 JP 5077599 B2 JP5077599 B2 JP 5077599B2 JP 2010103203 A JP2010103203 A JP 2010103203A JP 2010103203 A JP2010103203 A JP 2010103203A JP 5077599 B2 JP5077599 B2 JP 5077599B2
- Authority
- JP
- Japan
- Prior art keywords
- ion
- glass substrate
- current density
- density distribution
- ion implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000009826 distribution Methods 0.000 title claims description 102
- 238000005468 ion implantation Methods 0.000 title claims description 70
- 238000000034 method Methods 0.000 title claims description 29
- 238000010884 ion-beam technique Methods 0.000 claims description 193
- 239000000758 substrate Substances 0.000 claims description 91
- 239000011521 glass Substances 0.000 claims description 90
- 238000012545 processing Methods 0.000 claims description 27
- 150000002500 ions Chemical class 0.000 description 26
- 230000008569 process Effects 0.000 description 10
- 238000004458 analytical method Methods 0.000 description 8
- 230000032258 transport Effects 0.000 description 8
- 238000002513 implantation Methods 0.000 description 6
- 238000004364 calculation method Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 3
- 238000012935 Averaging Methods 0.000 description 2
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/10—Lenses
- H01J37/12—Lenses electrostatic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
- H01J37/243—Beam current control or regulation circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/065—Source emittance characteristics
- H01J2237/0656—Density
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Description
6.第1のイオンビーム
10.ガラス基板
16.第2のイオンビーム
25.制御装置
26.ユーザーインターフェース
36.第3のイオンビーム
46.第4のイオンビーム
Claims (4)
- 複数のイオンビーム供給装置の各々から処理室内に供給されるリボン状イオンビームの長辺方向と略直交する方向にガラス基板を搬送させ、ガラス基板の全面に渡って、各リボン状イオンビームによる照射領域を重ね合わせて、前記ガラス基板上に略均一なイオン注入量分布を形成するイオン注入装置において、各リボン状イオンビームに対するビーム電流密度分布の調整目標を設定する方法であって、
前記イオン注入装置に設定されるイオン注入条件に基づいて、均一性の調整が短時間で済むようなイオンビームの集まりや精度の良い均一性の調整が可能となるイオンビームの集まりである調整目標設定データを検索し、前記調整目標設定データ内に前記イオン注入条件と合致するデータがある場合には、前記各リボン状イオンビームのうち少なくとも1本のリボン状イオンビームのビーム電流密度分布の調整目標を、当該調整目標設定データから読み出したビーム電流の値を用いて設定することを特徴とするビーム電流密度分布の調整目標設定方法。 - 前記検索は、前記ガラス基板に照射されるイオンビームのイオン種とエネルギーを検索項目として行われることを特徴とする請求項1に記載のビーム電流密度分布の調整目標設定方法。
- 複数のイオンビーム供給装置の各々から処理室内に供給されるリボン状イオンビームの長辺方向と略直交する方向にガラス基板を搬送させ、ガラス基板の全面に渡って、各リボン状イオンビームによる照射領域を重ね合わせて、前記ガラス基板上に略均一なイオン注入量分布を形成するイオン注入装置であって、
前記イオン注入装置に設定されるイオン注入条件に基づいて、均一性の調整が短時間で済むようなイオンビームの集まりや精度の良い均一性の調整が可能となるイオンビームの集まりである調整目標設定データを検索し、前記調整目標設定データ内に前記イオン注入条件と合致するデータがある場合には、前記各リボン状イオンビームのうち少なくとも1本のリボン状イオンビームのビーム電流密度分布の調整目標を、当該調整目標設定データから読み出したビーム電流の値を用いて設定する機能を有する制御装置を備えていることを特徴とするイオン注入装置。 - 前記検索は、前記ガラス基板に照射されるイオンビームのイオン種とエネルギーを検索項目として行われることを特徴とする請求項3に記載のイオン注入装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010103203A JP5077599B2 (ja) | 2010-04-28 | 2010-04-28 | ビーム電流密度分布の調整目標設定方法及びイオン注入装置 |
CN201010264799.7A CN102237244B (zh) | 2010-04-28 | 2010-08-27 | 设定束电流密度分布的调整目标的方法和离子注入装置 |
KR1020100088744A KR101161087B1 (ko) | 2010-04-28 | 2010-09-10 | 빔 전류 밀도 분포의 조정 목표 설정 방법 및 이온 주입 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010103203A JP5077599B2 (ja) | 2010-04-28 | 2010-04-28 | ビーム電流密度分布の調整目標設定方法及びイオン注入装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011233387A JP2011233387A (ja) | 2011-11-17 |
JP5077599B2 true JP5077599B2 (ja) | 2012-11-21 |
Family
ID=44887785
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010103203A Active JP5077599B2 (ja) | 2010-04-28 | 2010-04-28 | ビーム電流密度分布の調整目標設定方法及びイオン注入装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5077599B2 (ja) |
KR (1) | KR101161087B1 (ja) |
CN (1) | CN102237244B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6195538B2 (ja) * | 2014-04-25 | 2017-09-13 | 住友重機械イオンテクノロジー株式会社 | イオン注入方法及びイオン注入装置 |
JP7111084B2 (ja) * | 2019-03-25 | 2022-08-02 | 日新イオン機器株式会社 | イオンビーム照射装置及びイオンビーム照射装置用プログラム |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2530398Y2 (ja) * | 1988-10-20 | 1997-03-26 | 日新電機株式会社 | イオン注入装置の制御装置 |
US5825038A (en) * | 1996-11-26 | 1998-10-20 | Eaton Corporation | Large area uniform ion beam formation |
US6323497B1 (en) * | 2000-06-02 | 2001-11-27 | Varian Semiconductor Equipment Assoc. | Method and apparatus for controlling ion implantation during vacuum fluctuation |
JP2006032930A (ja) * | 2004-06-14 | 2006-02-02 | Semiconductor Energy Lab Co Ltd | ドーピング装置 |
US20070063147A1 (en) * | 2004-06-14 | 2007-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Doping device |
US7777206B2 (en) * | 2005-02-24 | 2010-08-17 | Ulvac, Inc. | Ion implantation device control method, control system thereof, control program thereof, and ion implantation device |
KR100785725B1 (ko) * | 2006-05-23 | 2007-12-18 | 닛신 이온기기 가부시기가이샤 | 이온 빔 계측 방법 및 이온 주입 장치 |
GB2438893B (en) * | 2006-06-09 | 2010-10-27 | Applied Materials Inc | Ion beams in an ion implanter |
US7663125B2 (en) * | 2006-06-09 | 2010-02-16 | Varian Semiconductor Equipment Associates, Inc. | Ion beam current uniformity monitor, ion implanter and related method |
US8153513B2 (en) * | 2006-07-25 | 2012-04-10 | Silicon Genesis Corporation | Method and system for continuous large-area scanning implantation process |
JP2008039987A (ja) * | 2006-08-03 | 2008-02-21 | Kobe Steel Ltd | イオンビーム加工方法およびイオンビーム加工装置 |
-
2010
- 2010-04-28 JP JP2010103203A patent/JP5077599B2/ja active Active
- 2010-08-27 CN CN201010264799.7A patent/CN102237244B/zh active Active
- 2010-09-10 KR KR1020100088744A patent/KR101161087B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN102237244A (zh) | 2011-11-09 |
KR20110120186A (ko) | 2011-11-03 |
CN102237244B (zh) | 2014-08-27 |
JP2011233387A (ja) | 2011-11-17 |
KR101161087B1 (ko) | 2012-06-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104658843B (zh) | 高能量离子注入装置、射束电流调整装置及射束电流调整方法 | |
US9466467B2 (en) | Ion implantation apparatus | |
CN104183446B (zh) | 高能量离子注入装置 | |
TWI662581B (zh) | 高能量離子植入裝置、射束平行化器及射束平行化方法 | |
TWI585829B (zh) | 離子植入方法及離子植入設備 | |
KR102085386B1 (ko) | 고에너지 이온주입장치 | |
KR20140140479A (ko) | 고에너지 이온주입장치 | |
JP5648919B2 (ja) | イオン注入装置 | |
KR20190096283A (ko) | 이온 주입 장치 및 이온 주입 방법 | |
TWI654643B (zh) | 離子植入系統及用於離子植入的方法 | |
JP5077599B2 (ja) | ビーム電流密度分布の調整目標設定方法及びイオン注入装置 | |
TW201826315A (zh) | 離子植入方法以及離子植入裝置 | |
KR20150040757A (ko) | 플라즈마 cvd 장치 | |
JP5316899B2 (ja) | イオン注入方法およびイオン注入装置 | |
KR101122823B1 (ko) | 이온 주입 장치 및 빔 전류 밀도 분포의 조정 방법 | |
JP2011129332A (ja) | イオンビーム照射装置 | |
JP5477652B2 (ja) | イオン注入方法及びイオン注入装置 | |
KR101420058B1 (ko) | 마스크 및 이온빔 조사 장치 | |
JP5989601B2 (ja) | プラズマ蒸発装置 | |
Ninomiya et al. | Productivity Improvement for the SHX—SEN’s Single‐Wafer High‐Current Ion Implanter | |
JP2014082175A (ja) | マスク及びイオンビーム照射装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20111125 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120412 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120417 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120604 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120801 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120814 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150907 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5077599 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150907 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150907 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150907 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |