JP2006024601A - 電界効果型ｍｏｓトランジスタ - Google Patents

電界効果型ｍｏｓトランジスタ Download PDF

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Publication number
JP2006024601A
JP2006024601A JP2004198932A JP2004198932A JP2006024601A JP 2006024601 A JP2006024601 A JP 2006024601A JP 2004198932 A JP2004198932 A JP 2004198932A JP 2004198932 A JP2004198932 A JP 2004198932A JP 2006024601 A JP2006024601 A JP 2006024601A
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JP
Japan
Prior art keywords
polycrystalline silicon
type
mos transistor
field effect
type region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004198932A
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English (en)
Japanese (ja)
Other versions
JP2006024601A5 (enExample
Inventor
Hirobumi Harada
博文 原田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP2004198932A priority Critical patent/JP2006024601A/ja
Priority to US11/172,696 priority patent/US7282768B2/en
Publication of JP2006024601A publication Critical patent/JP2006024601A/ja
Publication of JP2006024601A5 publication Critical patent/JP2006024601A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2004198932A 2004-07-06 2004-07-06 電界効果型ｍｏｓトランジスタ Withdrawn JP2006024601A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004198932A JP2006024601A (ja) 2004-07-06 2004-07-06 電界効果型ｍｏｓトランジスタ
US11/172,696 US7282768B2 (en) 2004-07-06 2005-07-01 MOS field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004198932A JP2006024601A (ja) 2004-07-06 2004-07-06 電界効果型ｍｏｓトランジスタ

Publications (2)

Publication Number Publication Date
JP2006024601A true JP2006024601A (ja) 2006-01-26
JP2006024601A5 JP2006024601A5 (enExample) 2007-05-31

Family

ID=35540410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004198932A Withdrawn JP2006024601A (ja) 2004-07-06 2004-07-06 電界効果型ｍｏｓトランジスタ

Country Status (2)

Country Link
US (1) US7282768B2 (enExample)
JP (1) JP2006024601A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7605059B2 (en) 2006-05-31 2009-10-20 Fujifilm Corporation Semiconductor device and method of manufacturing the semiconductor device
JP2015207642A (ja) * 2014-04-18 2015-11-19 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5460279B2 (ja) * 2009-12-11 2014-04-02 株式会社日立製作所 半導体装置およびその製造方法
DE102016004338B4 (de) * 2016-04-13 2019-03-21 Drägerwerk AG & Co. KGaA Verwendung eines Gassensor für Anästhesiegasse
US10886405B2 (en) 2016-12-07 2021-01-05 Macronix International Co., Ltd. Semiconductor structure

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54101294A (en) * 1978-01-27 1979-08-09 Hitachi Ltd Dummy mos semiconductor device
JPH05308139A (ja) * 1992-04-01 1993-11-19 Nec Corp 半導体装置
JPH07202181A (ja) * 1993-12-28 1995-08-04 Rohm Co Ltd ゲート絶縁膜保護ダイオードを有するｍｏｓｆｅｔおよびｍｏｓｆｅｔの層間絶縁膜形成方法
JPH0945905A (ja) * 1995-07-28 1997-02-14 Nec Kansai Ltd 半導体装置およびその製造方法
JPH1041526A (ja) * 1996-07-18 1998-02-13 New Japan Radio Co Ltd 半導体装置およびその製造方法
JPH11330467A (ja) * 1998-05-20 1999-11-30 Fujitsu Ltd 半導体装置
JP2001217420A (ja) * 2000-02-01 2001-08-10 Mitsubishi Electric Corp 半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3999212A (en) * 1967-03-03 1976-12-21 Hitachi, Ltd. Field effect semiconductor device having a protective diode
US5536958A (en) * 1995-05-02 1996-07-16 Motorola, Inc. Semiconductor device having high voltage protection capability

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54101294A (en) * 1978-01-27 1979-08-09 Hitachi Ltd Dummy mos semiconductor device
JPH05308139A (ja) * 1992-04-01 1993-11-19 Nec Corp 半導体装置
JPH07202181A (ja) * 1993-12-28 1995-08-04 Rohm Co Ltd ゲート絶縁膜保護ダイオードを有するｍｏｓｆｅｔおよびｍｏｓｆｅｔの層間絶縁膜形成方法
JPH0945905A (ja) * 1995-07-28 1997-02-14 Nec Kansai Ltd 半導体装置およびその製造方法
JPH1041526A (ja) * 1996-07-18 1998-02-13 New Japan Radio Co Ltd 半導体装置およびその製造方法
JPH11330467A (ja) * 1998-05-20 1999-11-30 Fujitsu Ltd 半導体装置
JP2001217420A (ja) * 2000-02-01 2001-08-10 Mitsubishi Electric Corp 半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7605059B2 (en) 2006-05-31 2009-10-20 Fujifilm Corporation Semiconductor device and method of manufacturing the semiconductor device
JP2015207642A (ja) * 2014-04-18 2015-11-19 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
US7282768B2 (en) 2007-10-16
US20060006470A1 (en) 2006-01-12

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