JP2006024601A5 - - Google Patents
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- Publication number
- JP2006024601A5 JP2006024601A5 JP2004198932A JP2004198932A JP2006024601A5 JP 2006024601 A5 JP2006024601 A5 JP 2006024601A5 JP 2004198932 A JP2004198932 A JP 2004198932A JP 2004198932 A JP2004198932 A JP 2004198932A JP 2006024601 A5 JP2006024601 A5 JP 2006024601A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- type
- insulating film
- type region
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims 30
- 239000000758 substrate Substances 0.000 claims 30
- 239000002184 metal Substances 0.000 claims 18
- 230000002457 bidirectional effect Effects 0.000 claims 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 12
- 150000004767 nitrides Chemical class 0.000 claims 7
- 230000001681 protective effect Effects 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000011241 protective layer Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004198932A JP2006024601A (ja) | 2004-07-06 | 2004-07-06 | 電界効果型ｍｏｓトランジスタ |
| US11/172,696 US7282768B2 (en) | 2004-07-06 | 2005-07-01 | MOS field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004198932A JP2006024601A (ja) | 2004-07-06 | 2004-07-06 | 電界効果型ｍｏｓトランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006024601A JP2006024601A (ja) | 2006-01-26 |
| JP2006024601A5 true JP2006024601A5 (enExample) | 2007-05-31 |
Family
ID=35540410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004198932A Withdrawn JP2006024601A (ja) | 2004-07-06 | 2004-07-06 | 電界効果型ｍｏｓトランジスタ |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7282768B2 (enExample) |
| JP (1) | JP2006024601A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007324305A (ja) | 2006-05-31 | 2007-12-13 | Fujifilm Corp | 半導体素子、半導体素子の製造方法 |
| JP5460279B2 (ja) * | 2009-12-11 | 2014-04-02 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
| JP6270607B2 (ja) * | 2014-04-18 | 2018-01-31 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
| DE102016004338B4 (de) * | 2016-04-13 | 2019-03-21 | Drägerwerk AG & Co. KGaA | Verwendung eines Gassensor für Anästhesiegasse |
| US10886405B2 (en) | 2016-12-07 | 2021-01-05 | Macronix International Co., Ltd. | Semiconductor structure |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3999212A (en) * | 1967-03-03 | 1976-12-21 | Hitachi, Ltd. | Field effect semiconductor device having a protective diode |
| JPS54101294A (en) * | 1978-01-27 | 1979-08-09 | Hitachi Ltd | Dummy mos semiconductor device |
| JPH05308139A (ja) * | 1992-04-01 | 1993-11-19 | Nec Corp | 半導体装置 |
| JPH07202181A (ja) * | 1993-12-28 | 1995-08-04 | Rohm Co Ltd | ゲート絶縁膜保護ダイオードを有するｍｏｓｆｅｔおよびｍｏｓｆｅｔの層間絶縁膜形成方法 |
| US5536958A (en) * | 1995-05-02 | 1996-07-16 | Motorola, Inc. | Semiconductor device having high voltage protection capability |
| JP3489602B2 (ja) * | 1995-07-28 | 2004-01-26 | 関西日本電気株式会社 | 半導体装置およびその製造方法 |
| JPH1041526A (ja) * | 1996-07-18 | 1998-02-13 | New Japan Radio Co Ltd | 半導体装置およびその製造方法 |
| JP3758366B2 (ja) * | 1998-05-20 | 2006-03-22 | 富士通株式会社 | 半導体装置 |
| JP4054155B2 (ja) * | 2000-02-01 | 2008-02-27 | 三菱電機株式会社 | 半導体装置 |
-
2004
- 2004-07-06 JP JP2004198932A patent/JP2006024601A/ja not_active Withdrawn
-
2005
- 2005-07-01 US US11/172,696 patent/US7282768B2/en not_active Expired - Lifetime
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