JP2006022103A - 自己組織化デンドロン単分子膜の製造 - Google Patents
自己組織化デンドロン単分子膜の製造 Download PDFInfo
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
【解決手段】本発明のデンドロン(2)は、中心点(4)と複数のフッ素化末端基をもつことを特徴とし、前記デンドロンは、基板(3)への化学吸着に適した成分、チオール、シラン、カルボン酸及びホスホン酸塩などを前記中心点に有する。また、本発明の自己組織化単分子膜は、デンドロンが複数基板上に固着していることを特徴とする。また、そのような自己組織化単分子膜からなるデバイスを提供する。
【選択図】図2
Description
Y
/
[F2C]m
/
CF2
/
[H2C]n
/
CH2
/
X
ここで、Xは(これに限定されないが)、R−SH,RS−SR、またはR−S−R(ここでRは、残りの分子を表す)である。より好ましくは、Xは、チオールである。
Y
/
[F2C]m
/
CF2
/
[H2C]n
/
CH2
/
Si
ここで、Siは(これに限定されないが)、SiCl3、Si(OCH3)3、Si(OCH2CH2CH3)3、Si(OCH3)2ClまたはSi(CH2CH3)2Clでもよい。より好ましくは、SiはSiCl3である。m及びnは、それぞれフッ化炭素及び非フッ化炭素原子の数を表し、1−20の範囲のいずれかの値をとる。Yは、好ましくは、CF3官能基である。Yは、一つまたは複数の置換基をさらに組み込むようにさせてもよく、例えば、ビニル基、スチル基、アクリロイル基、メタクリロイル基またはアルキン基などの置換基を、さらなる機能化もしくは架橋結合を行うために組み込んでもよい。また、一つまたは複数のスペーサーとなる分子、例えば、CH2などを持たせることで、結合を促進させてもよい。
Claims (30)
- 中心点と複数のフッ素化末端基をもつことを特徴とするデンドロン。
- 基板への化学吸着に適した成分、シラン、カルボン酸、ホスホン酸塩などを前記中心点に有することを特徴とする請求項1に記載のデンドロン。
- 前記中心点にチオールを有することを特徴とする請求項1に記載のデンドロン。
- 前記デンドロンが第一世代であることを特徴とする請求項1乃至3のいずれか一項に記載のデンドロン。
- 例1に示すデンドロンチオール構造を有することを特徴とする請求項4に記載のデンドロン。
- 例4に示すデンドロンチオール構造を有することを特徴とする請求項4に記載のデンドロン。
- 例7に示すデンドロンチオール構造を有することを特徴とする請求項4に記載のデンドロン。
- 前記デンドロンが第二世代であることを特徴とする請求項1乃至3のいずれか一項に記載のデンドロン。
- 例2に示すデンドロンチオール構造を有することを特徴とする請求項8に記載のデンドロン。
- 例5に示すデンドロンチオール構造を有することを特徴とする請求項8に記載のデンドロン。
- 前記デンドロンが第三世代もしくは、それより上の世代であることを特徴とする請求項1乃至3のいずれか一項に記載のデンドロン。
- 例3に示すデンドロンチオール構造を有することを特徴とする請求項11に記載のデンドロン。
- 例6に示すデンドロンチオール構造を有することを特徴とする請求項11に記載のデンドロン。
- 上記請求項のうちいずれか一項にかかる前記デンドロンが複数基板上に固着していることを特徴とする自己組織化単分子膜。
- 前記基板は、金属酸化物またはシリカやガラスのような他の酸化物からなり、前記複数のデンドロンは、シランを前記中心点としてもつデンドロンを含むことを特徴とする請求項14に記載の自己組織化単分子膜。
- 前記基板は金属からなり、前記複数のデンドロンは、チオールを前記中心点としてもつデンドロンを含むことを特徴とする請求項14に記載の自己組織化単分子膜。
- ジクロロメタン、及び/または、オクタフルオロトルエンのデンドロン溶液に基板をさらすことによって形成されることを特徴とする請求項16に記載の自己組織化単分子膜。
- 前記デンドロン溶液の濃度は、1mM程度、もしくはそれ以上の濃度であることを特徴とする請求項17に記載の自己組織化単分子膜。
- 前記基板を前記溶液にさらす際の温度が、およそ10℃から65℃の間であることを特徴とする請求項17、または請求項18に記載の自己組織化単分子膜。
- 前記基板を前記溶液にさらす際の温度が、およそ10℃から25℃の間であることを特徴とする請求項17、または請求項18に記載の自己組織化単分子膜。
- 前記基板を前記溶液にさらす時間が、およそ1分間から24時間の間であることを特徴とする請求項17乃至20のいずれか一項に記載の自己組織化単分子膜。
- 前記基板を前記溶液にさらす時間が、およそ30分間以下であることを特徴とする請求項17乃至20いずれか一項に記載の自己組織化単分子膜。
- 圧縮二酸化炭素中のデンドロンに前記基板をさらすことによって形成されることを特徴とする請求項16に記載の自己組織化単分子膜。
- 前記二酸化炭素は、超臨界二酸化炭素であることを特徴とする請求項23に記載の自己組織化単分子膜。
- 前記基板の表面と前記デンドロンとを、密封された容器内に置き、二酸化炭素を前記容器内に導入させたり排出させたりすることによって形成されることを特徴とする請求項23または請求項24に記載の自己組織化単分子膜。
- 前記二酸化炭素は1000psi以下の圧力で導入されることを特徴とする請求項25に記載の自己組織化単分子膜。
- 前記基板表面と前記デンドロンとを、密封された容器に置く工程と、二酸化炭素を1000psi以下の圧力で導入し、また前記二酸化炭素を前記容器から排出する工程とを、3回以上繰り返すことを特徴とする請求項25または請求項26に記載の自己組織化単分子膜。
- 上記請求項14乃至27のいずれか一項に記載の自己組織化単分子膜を含むことを特徴とするデバイス。
- 前記デバイスは、流体を蒸着させる装置であることを特徴とする請求項28に記載のデバイス。
- 前記デバイスは、インクジェットプリンターのヘッド、もしくは、インクジェットプリンターであることを特徴とする請求項29に記載のデバイス。
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JP2006160715A (ja) * | 2004-11-12 | 2006-06-22 | Institute Of Physical & Chemical Research | アゾベンゼン誘導体化合物、粒子およびその製造方法 |
KR20220002141A (ko) | 2020-06-30 | 2022-01-06 | 가부시키가이샤 후지킨 | 볼트 보유 지지 부재, 볼트 및 볼트 보유 지지 부재의 조합체, 및 장착 방법 |
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US6312809B1 (en) * | 1996-04-24 | 2001-11-06 | Sandia Corporation | Dendrimer monolayer films |
US6652779B1 (en) * | 1998-07-27 | 2003-11-25 | Pacific Wave Industries, Inc. | Polymers containing polyene-based second-order nonlinear optical chromophores and devices incorporating the same |
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KR20220002141A (ko) | 2020-06-30 | 2022-01-06 | 가부시키가이샤 후지킨 | 볼트 보유 지지 부재, 볼트 및 볼트 보유 지지 부재의 조합체, 및 장착 방법 |
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