JP2006013368A - 回路装置およびその製造方法 - Google Patents
回路装置およびその製造方法 Download PDFInfo
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- JP2006013368A JP2006013368A JP2004191882A JP2004191882A JP2006013368A JP 2006013368 A JP2006013368 A JP 2006013368A JP 2004191882 A JP2004191882 A JP 2004191882A JP 2004191882 A JP2004191882 A JP 2004191882A JP 2006013368 A JP2006013368 A JP 2006013368A
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- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
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- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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Abstract
【解決手段】 本発明の回路装置は、クラッド材で形成された金属性の基材140と、基材140の上に設けられた絶縁樹脂膜122と、絶縁樹脂膜122に埋め込まれた複数の複数の半導体素子142a、半導体素子142bや受動素子144とを備える。基材140は、熱伝導性が良好な金属と低熱膨張金属とが組み合わせたクラッド材で構成されることが望ましい。熱伝導性が良好な金属とは、熱伝導率が200〜500W/mKの金属であり、Al、Au、Ag、Cuおよびその合金が例示される。また、低熱膨張金属とは、熱膨張係数が0.5〜5.0x10-6/Kの金属であり、Fe、Ni、Coの合金が例示される。
【選択図】図6
Description
Claims (5)
- クラッド材で形成された金属性の基材と、
前記基材の上に設けられた絶縁樹脂膜と、
前記絶縁樹脂膜に埋め込まれた複数の回路素子と、
を備えることを特徴とする回路装置。 - 前記基材は、熱伝導性が良好な金属と低熱膨張金属とが組み合わせたクラッド材で構成されたことを特徴とする請求項1に記載の回路装置。
- 前記熱伝導性が良好な金属が、熱伝導率が200〜500W/mKの金属であり、前記低熱膨張金属が、熱膨張係数が0.5〜5.0x10-6/Kの金属であることを特徴とする請求項2に記載の回路装置。
- 前記基材の表面に絶縁膜が形成されていることを特徴とする請求項1乃至3のいずれか1項に記載の回路装置。
- 複数の回路素子を絶縁樹脂膜に埋め込む工程と、
前記絶縁樹脂膜をクラッド材で形成された金属性の基材の表面に接合する工程と、
を備えることを特徴とする回路装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004191882A JP2006013368A (ja) | 2004-06-29 | 2004-06-29 | 回路装置およびその製造方法 |
TW094120741A TW200605169A (en) | 2004-06-29 | 2005-06-22 | Circuit device and process for manufacture thereof |
CN2008102128216A CN101419949B (zh) | 2004-06-29 | 2005-06-29 | 电路装置及其制造方法 |
US11/168,655 US8022533B2 (en) | 2004-06-29 | 2005-06-29 | Circuit apparatus provided with asperities on substrate surface |
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JP2004191882A JP2006013368A (ja) | 2004-06-29 | 2004-06-29 | 回路装置およびその製造方法 |
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JP2006013368A true JP2006013368A (ja) | 2006-01-12 |
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JP2004191882A Pending JP2006013368A (ja) | 2004-06-29 | 2004-06-29 | 回路装置およびその製造方法 |
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61240665A (ja) * | 1985-04-17 | 1986-10-25 | Sanyo Electric Co Ltd | 半導体装置 |
JPH08125117A (ja) * | 1994-10-19 | 1996-05-17 | Sanyo Electric Co Ltd | 混成集積回路装置およびその製造方法 |
JPH08162573A (ja) * | 1994-12-08 | 1996-06-21 | Nitto Denko Corp | 半導体装置 |
JPH10223832A (ja) * | 1997-02-04 | 1998-08-21 | Hitachi Ltd | マルチチップモジュールおよびその製造方法 |
JPH11126868A (ja) * | 1997-08-19 | 1999-05-11 | Hitachi Ltd | マルチチップモジュール用ベース基板の作製方法 |
JP2001110959A (ja) * | 1999-10-13 | 2001-04-20 | Hitachi Ltd | 半導体装置及びそれを用いた電子装置 |
JP2001267340A (ja) * | 2000-03-16 | 2001-09-28 | Hitachi Ltd | 半導体装置の製造方法 |
JP2001274312A (ja) * | 2000-03-28 | 2001-10-05 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP2004047543A (ja) * | 2002-07-09 | 2004-02-12 | Fujitsu Ltd | 半導体装置の製造方法 |
-
2004
- 2004-06-29 JP JP2004191882A patent/JP2006013368A/ja active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61240665A (ja) * | 1985-04-17 | 1986-10-25 | Sanyo Electric Co Ltd | 半導体装置 |
JPH08125117A (ja) * | 1994-10-19 | 1996-05-17 | Sanyo Electric Co Ltd | 混成集積回路装置およびその製造方法 |
JPH08162573A (ja) * | 1994-12-08 | 1996-06-21 | Nitto Denko Corp | 半導体装置 |
JPH10223832A (ja) * | 1997-02-04 | 1998-08-21 | Hitachi Ltd | マルチチップモジュールおよびその製造方法 |
JPH11126868A (ja) * | 1997-08-19 | 1999-05-11 | Hitachi Ltd | マルチチップモジュール用ベース基板の作製方法 |
JP2001110959A (ja) * | 1999-10-13 | 2001-04-20 | Hitachi Ltd | 半導体装置及びそれを用いた電子装置 |
JP2001267340A (ja) * | 2000-03-16 | 2001-09-28 | Hitachi Ltd | 半導体装置の製造方法 |
JP2001274312A (ja) * | 2000-03-28 | 2001-10-05 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP2004047543A (ja) * | 2002-07-09 | 2004-02-12 | Fujitsu Ltd | 半導体装置の製造方法 |
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