JP2006003775A - ディスプレイ用基板 - Google Patents
ディスプレイ用基板 Download PDFInfo
- Publication number
- JP2006003775A JP2006003775A JP2004182264A JP2004182264A JP2006003775A JP 2006003775 A JP2006003775 A JP 2006003775A JP 2004182264 A JP2004182264 A JP 2004182264A JP 2004182264 A JP2004182264 A JP 2004182264A JP 2006003775 A JP2006003775 A JP 2006003775A
- Authority
- JP
- Japan
- Prior art keywords
- display substrate
- wiring
- thin plate
- thermal expansion
- resin layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 75
- 239000011347 resin Substances 0.000 claims abstract description 55
- 229920005989 resin Polymers 0.000 claims abstract description 55
- 230000003746 surface roughness Effects 0.000 claims abstract description 17
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 13
- 239000000956 alloy Substances 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 9
- 230000009477 glass transition Effects 0.000 claims abstract description 8
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims description 56
- 239000002184 metal Substances 0.000 claims description 56
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 239000011651 chromium Substances 0.000 claims description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 238000007788 roughening Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 abstract description 8
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical class [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 description 15
- 239000010408 film Substances 0.000 description 11
- 239000011521 glass Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- VNTLIPZTSJSULJ-UHFFFAOYSA-N chromium molybdenum Chemical compound [Cr].[Mo] VNTLIPZTSJSULJ-UHFFFAOYSA-N 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910001182 Mo alloy Inorganic materials 0.000 description 4
- 229910000990 Ni alloy Inorganic materials 0.000 description 4
- 229910000531 Co alloy Inorganic materials 0.000 description 3
- 229910000599 Cr alloy Inorganic materials 0.000 description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000788 chromium alloy Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000002966 varnish Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- XBCSKPOWJATIFC-UHFFFAOYSA-N cobalt iron nickel Chemical compound [Fe][Ni][Fe][Co] XBCSKPOWJATIFC-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Gas-Filled Discharge Tubes (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004182264A JP2006003775A (ja) | 2004-06-21 | 2004-06-21 | ディスプレイ用基板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004182264A JP2006003775A (ja) | 2004-06-21 | 2004-06-21 | ディスプレイ用基板 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006003775A true JP2006003775A (ja) | 2006-01-05 |
| JP2006003775A5 JP2006003775A5 (https=) | 2007-02-01 |
Family
ID=35772194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004182264A Pending JP2006003775A (ja) | 2004-06-21 | 2004-06-21 | ディスプレイ用基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006003775A (https=) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011233858A (ja) * | 2010-04-09 | 2011-11-17 | Dainippon Printing Co Ltd | 薄膜素子用基板の製造方法、薄膜素子の製造方法、薄膜トランジスタの製造方法、薄膜素子、および薄膜トランジスタ |
| US9024312B2 (en) | 2009-09-30 | 2015-05-05 | Dai Nippon Printing Co., Ltd. | Substrate for flexible device, thin film transistor substrate for flexible device, flexible device, substrate for thin film element, thin film element, thin film transistor, method for manufacturing substrate for thin film element, method for manufacturing thin film element, and method for manufacturing thin film transistor |
| JPWO2015005263A1 (ja) * | 2013-07-11 | 2017-03-02 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子及びその製造方法 |
| US10050225B2 (en) | 2010-11-29 | 2018-08-14 | Samsung Display Co., Ltd. | Organic light emitting diode display |
| JP2020079448A (ja) * | 2020-02-06 | 2020-05-28 | 大日本印刷株式会社 | 蒸着マスク準備体の製造方法、フレーム付き蒸着マスク準備体の製造方法、フレーム付き蒸着マスク準備体、及び樹脂板 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09179106A (ja) * | 1995-12-21 | 1997-07-11 | Dainippon Printing Co Ltd | 薄型ディスプレイ用基板とこれを使用したフィルム液晶ディスプレイおよびフィールドエミッションディスプレイ |
| JPH10293293A (ja) * | 1997-04-18 | 1998-11-04 | Dainippon Printing Co Ltd | ディスプレイ用可撓性基板およびその製造方法 |
| JP2003280553A (ja) * | 2002-03-22 | 2003-10-02 | Sharp Corp | アクティブマトリクス基板 |
| JP2003531487A (ja) * | 2000-04-18 | 2003-10-21 | イー−インク コーポレイション | 薄膜トランジスタを製造するためのプロセス |
| JP2004148566A (ja) * | 2002-10-29 | 2004-05-27 | Fuji Photo Film Co Ltd | ガスバリア性フィルム並びに該ガスバリア性フィルムからなる基板、該ガスバリア性フィルムを有する画像表示素子 |
-
2004
- 2004-06-21 JP JP2004182264A patent/JP2006003775A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09179106A (ja) * | 1995-12-21 | 1997-07-11 | Dainippon Printing Co Ltd | 薄型ディスプレイ用基板とこれを使用したフィルム液晶ディスプレイおよびフィールドエミッションディスプレイ |
| JPH10293293A (ja) * | 1997-04-18 | 1998-11-04 | Dainippon Printing Co Ltd | ディスプレイ用可撓性基板およびその製造方法 |
| JP2003531487A (ja) * | 2000-04-18 | 2003-10-21 | イー−インク コーポレイション | 薄膜トランジスタを製造するためのプロセス |
| JP2003280553A (ja) * | 2002-03-22 | 2003-10-02 | Sharp Corp | アクティブマトリクス基板 |
| JP2004148566A (ja) * | 2002-10-29 | 2004-05-27 | Fuji Photo Film Co Ltd | ガスバリア性フィルム並びに該ガスバリア性フィルムからなる基板、該ガスバリア性フィルムを有する画像表示素子 |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9024312B2 (en) | 2009-09-30 | 2015-05-05 | Dai Nippon Printing Co., Ltd. | Substrate for flexible device, thin film transistor substrate for flexible device, flexible device, substrate for thin film element, thin film element, thin film transistor, method for manufacturing substrate for thin film element, method for manufacturing thin film element, and method for manufacturing thin film transistor |
| JP2011233858A (ja) * | 2010-04-09 | 2011-11-17 | Dainippon Printing Co Ltd | 薄膜素子用基板の製造方法、薄膜素子の製造方法、薄膜トランジスタの製造方法、薄膜素子、および薄膜トランジスタ |
| US10050225B2 (en) | 2010-11-29 | 2018-08-14 | Samsung Display Co., Ltd. | Organic light emitting diode display |
| US11251396B2 (en) | 2010-11-29 | 2022-02-15 | Samsung Display Co., Ltd. | Organic light emitting diode display |
| JPWO2015005263A1 (ja) * | 2013-07-11 | 2017-03-02 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子及びその製造方法 |
| JP2020079448A (ja) * | 2020-02-06 | 2020-05-28 | 大日本印刷株式会社 | 蒸着マスク準備体の製造方法、フレーム付き蒸着マスク準備体の製造方法、フレーム付き蒸着マスク準備体、及び樹脂板 |
| JP7120262B2 (ja) | 2020-02-06 | 2022-08-17 | 大日本印刷株式会社 | 蒸着マスク準備体の製造方法、フレーム付き蒸着マスク準備体の製造方法、及びフレーム付き蒸着マスク準備体 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20061212 |
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| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070517 |
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| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100625 |
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| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100819 |
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| A02 | Decision of refusal |
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