JP2005539404A5 - - Google Patents

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Publication number
JP2005539404A5
JP2005539404A5 JP2005501049A JP2005501049A JP2005539404A5 JP 2005539404 A5 JP2005539404 A5 JP 2005539404A5 JP 2005501049 A JP2005501049 A JP 2005501049A JP 2005501049 A JP2005501049 A JP 2005501049A JP 2005539404 A5 JP2005539404 A5 JP 2005539404A5
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JP
Japan
Prior art keywords
nanoscale
wiring
microscale
wirings
memory array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005501049A
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English (en)
Japanese (ja)
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JP2005539404A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/US2003/023199 external-priority patent/WO2004034467A2/en
Publication of JP2005539404A publication Critical patent/JP2005539404A/ja
Publication of JP2005539404A5 publication Critical patent/JP2005539404A5/ja
Pending legal-status Critical Current

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JP2005501049A 2002-07-25 2003-07-24 サブパターン転写ナノスケールメモリ構造 Pending JP2005539404A (ja)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US39894302P 2002-07-25 2002-07-25
US40039402P 2002-08-01 2002-08-01
US41517602P 2002-09-30 2002-09-30
US42901002P 2002-11-25 2002-11-25
US44199503P 2003-01-23 2003-01-23
US46535703P 2003-04-25 2003-04-25
US46738803P 2003-05-02 2003-05-02
PCT/US2003/023199 WO2004034467A2 (en) 2002-07-25 2003-07-24 Sublithographic nanoscale memory architecture

Publications (2)

Publication Number Publication Date
JP2005539404A JP2005539404A (ja) 2005-12-22
JP2005539404A5 true JP2005539404A5 (cg-RX-API-DMAC7.html) 2006-09-07

Family

ID=32097212

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2005501049A Pending JP2005539404A (ja) 2002-07-25 2003-07-24 サブパターン転写ナノスケールメモリ構造
JP2005508519A Pending JP2006512782A (ja) 2002-07-25 2003-07-24 サブパターン転写ナノスケールインターフェースの確率的組立体

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2005508519A Pending JP2006512782A (ja) 2002-07-25 2003-07-24 サブパターン転写ナノスケールインターフェースの確率的組立体

Country Status (7)

Country Link
US (2) US6900479B2 (cg-RX-API-DMAC7.html)
EP (3) EP1525586B1 (cg-RX-API-DMAC7.html)
JP (2) JP2005539404A (cg-RX-API-DMAC7.html)
AT (2) ATE360873T1 (cg-RX-API-DMAC7.html)
AU (2) AU2003298530A1 (cg-RX-API-DMAC7.html)
DE (2) DE60325903D1 (cg-RX-API-DMAC7.html)
WO (2) WO2004061859A2 (cg-RX-API-DMAC7.html)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1314189B1 (en) * 2000-08-22 2013-02-27 President and Fellows of Harvard College Electrical device comprising doped semiconductor nanowires and method for its production
US20060175601A1 (en) * 2000-08-22 2006-08-10 President And Fellows Of Harvard College Nanoscale wires and related devices
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
WO2002048701A2 (en) * 2000-12-11 2002-06-20 President And Fellows Of Harvard College Nanosensors
US7073157B2 (en) * 2002-01-18 2006-07-04 California Institute Of Technology Array-based architecture for molecular electronics
WO2004010552A1 (en) 2002-07-19 2004-01-29 President And Fellows Of Harvard College Nanoscale coherent optical components
EP1525586B1 (en) 2002-07-25 2007-04-25 California Institute of Technology Sublithographic nanoscale memory architecture
EP1388521B1 (en) * 2002-08-08 2006-06-07 Sony Deutschland GmbH Method for preparing a nanowire crossbar structure
JP5336031B2 (ja) 2002-09-30 2013-11-06 ナノシス・インク． 大面積ナノ可能マクロエレクトロニクス基板およびその使用
US7135728B2 (en) * 2002-09-30 2006-11-14 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
US7274208B2 (en) * 2003-06-02 2007-09-25 California Institute Of Technology Nanoscale wire-based sublithographic programmable logic arrays
US7242601B2 (en) * 2003-06-02 2007-07-10 California Institute Of Technology Deterministic addressing of nanoscale devices assembled at sublithographic pitches
US7692952B2 (en) * 2003-07-24 2010-04-06 California Institute Of Technology Nanoscale wire coding for stochastic assembly
WO2005084164A2 (en) * 2003-08-13 2005-09-15 Nantero, Inc. Nanotube-based switching elements and logic circuits
US7018549B2 (en) * 2003-12-29 2006-03-28 Intel Corporation Method of fabricating multiple nanowires of uniform length from a single catalytic nanoparticle
US20090227107A9 (en) * 2004-02-13 2009-09-10 President And Fellows Of Havard College Nanostructures Containing Metal Semiconductor Compounds
US7049626B1 (en) * 2004-04-02 2006-05-23 Hewlett-Packard Development Company, L.P. Misalignment-tolerant electronic interfaces and methods for producing misalignment-tolerant electronic interfaces
US7310004B2 (en) * 2004-05-28 2007-12-18 California Institute Of Technology Apparatus and method of interconnecting nanoscale programmable logic array clusters
WO2006107312A1 (en) * 2004-06-15 2006-10-12 President And Fellows Of Harvard College Nanosensors
JP2008505476A (ja) * 2004-06-30 2008-02-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ナノワイヤによってコンタクトがとられる導電性材料の層を有する電子装置を製造する方法
US7495942B2 (en) 2004-08-13 2009-02-24 University Of Florida Research Foundation, Inc. Nanoscale content-addressable memory
EP1792320A4 (en) * 2004-09-21 2010-08-04 Nantero Inc RESISTANCE ELEMENTS WITH CARBON NANOTUBES
US7544977B2 (en) * 2006-01-27 2009-06-09 Hewlett-Packard Development Company, L.P. Mixed-scale electronic interface
JP2008523590A (ja) * 2004-12-06 2008-07-03 プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ ナノスケールワイヤベースのデータ格納装置
US8883568B2 (en) 2008-06-10 2014-11-11 Brown University Research Foundation Method providing radial addressing of nanowires
US8072005B2 (en) * 2005-02-04 2011-12-06 Brown University Research Foundation Apparatus, method and computer program product providing radial addressing of nanowires
US7211503B2 (en) * 2005-02-24 2007-05-01 Hewlett-Packard Development Company, L.P. Electronic devices fabricated by use of random connections
DE102005016244A1 (de) * 2005-04-08 2006-10-19 Infineon Technologies Ag Speicherzelle, Speichereinrichtung und Verfahren zu deren Herstellung
US7786467B2 (en) * 2005-04-25 2010-08-31 Hewlett-Packard Development Company, L.P. Three-dimensional nanoscale crossbars
US20100227382A1 (en) 2005-05-25 2010-09-09 President And Fellows Of Harvard College Nanoscale sensors
WO2006132659A2 (en) 2005-06-06 2006-12-14 President And Fellows Of Harvard College Nanowire heterostructures
WO2007002297A2 (en) * 2005-06-24 2007-01-04 Crafts Douglas E Temporary planar electrical contact device and method using vertically-compressible nanotube contact structures
US9159417B2 (en) * 2005-12-20 2015-10-13 The Invention Science Fund I, Llc Deletable nanotube circuit
US7989797B2 (en) * 2005-12-20 2011-08-02 The Invention Science Fund I, Llc Connectible nanotube circuit
US7696505B2 (en) * 2005-12-20 2010-04-13 Searete Llc Connectible nanotube circuit
US7786465B2 (en) * 2005-12-20 2010-08-31 Invention Science Fund 1, Llc Deletable nanotube circuit
US9965251B2 (en) * 2006-04-03 2018-05-08 Blaise Laurent Mouttet Crossbar arithmetic and summation processor
US7302513B2 (en) * 2006-04-03 2007-11-27 Blaise Laurent Mouttet Programmable crossbar signal processor
US7576565B2 (en) * 2006-04-03 2009-08-18 Blaise Laurent Mouttet Crossbar waveform driver circuit
US8183554B2 (en) * 2006-04-03 2012-05-22 Blaise Laurent Mouttet Symmetrical programmable memresistor crossbar structure
US20070233761A1 (en) * 2006-04-03 2007-10-04 Mouttet Blaise L Crossbar arithmetic processor
AU2007309660A1 (en) 2006-06-12 2008-05-02 President And Fellows Of Harvard College Nanosensors and related technologies
US7763932B2 (en) * 2006-06-29 2010-07-27 International Business Machines Corporation Multi-bit high-density memory device and architecture and method of fabricating multi-bit high-density memory devices
TWI307677B (en) * 2006-07-18 2009-03-21 Applied Res Lab Method and device for fabricating nano-structure with patterned particle beam
US7393739B2 (en) * 2006-08-30 2008-07-01 International Business Machines Corporation Demultiplexers using transistors for accessing memory cell arrays
WO2008033303A2 (en) 2006-09-11 2008-03-20 President And Fellows Of Harvard College Branched nanoscale wires
US8063450B2 (en) 2006-09-19 2011-11-22 Qunano Ab Assembly of nanoscaled field effect transistors
US8130007B2 (en) * 2006-10-16 2012-03-06 Formfactor, Inc. Probe card assembly with carbon nanotube probes having a spring mechanism therein
US7778061B2 (en) * 2006-10-16 2010-08-17 Hewlett-Packard Development Company, L.P. Crossbar-memory systems and methods for writing to and reading from crossbar memory junctions of crossbar-memory systems
TWI463713B (zh) 2006-11-09 2014-12-01 Nanosys Inc 用於奈米導線對準及沈積的方法
US8575663B2 (en) 2006-11-22 2013-11-05 President And Fellows Of Harvard College High-sensitivity nanoscale wire sensors
US9806273B2 (en) * 2007-01-03 2017-10-31 The United States Of America As Represented By The Secretary Of The Army Field effect transistor array using single wall carbon nano-tubes
US7608854B2 (en) * 2007-01-29 2009-10-27 Hewlett-Packard Development Company, L.P. Electronic device and method of making the same
US7763978B2 (en) * 2007-03-28 2010-07-27 Hewlett-Packard Development Company, L.P. Three-dimensional crossbar array systems and methods for writing information to and reading information stored in three-dimensional crossbar array junctions
US7872334B2 (en) * 2007-05-04 2011-01-18 International Business Machines Corporation Carbon nanotube diodes and electrostatic discharge circuits and methods
US7492624B2 (en) * 2007-06-29 2009-02-17 Stmicroelectronics S.R.L. Method and device for demultiplexing a crossbar non-volatile memory
JP2011523200A (ja) * 2008-04-15 2011-08-04 クナノ アーベー ナノワイヤラップゲートデバイス
EP2351083B1 (en) * 2008-10-20 2016-09-28 The Regents of the University of Michigan A silicon based nanoscale crossbar memory
WO2010126468A1 (en) * 2009-04-30 2010-11-04 Hewlett-Packard Development Company, L.P. Dense nanoscale logic circuitry
WO2010138506A1 (en) 2009-05-26 2010-12-02 Nanosys, Inc. Methods and systems for electric field deposition of nanowires and other devices
US9297796B2 (en) 2009-09-24 2016-03-29 President And Fellows Of Harvard College Bent nanowires and related probing of species
KR101161060B1 (ko) * 2009-11-30 2012-06-29 서강대학교산학협력단 나노입자를 기둥형태로 조직화시키기 위한 배열장치 및 그 배열방법
US9181089B2 (en) 2010-01-15 2015-11-10 Board Of Regents Of The University Of Texas System Carbon nanotube crossbar based nano-architecture
US7982504B1 (en) 2010-01-29 2011-07-19 Hewlett Packard Development Company, L.P. Interconnection architecture for multilayer circuits
US9324718B2 (en) 2010-01-29 2016-04-26 Hewlett Packard Enterprise Development Lp Three dimensional multilayer circuit
US9368599B2 (en) 2010-06-22 2016-06-14 International Business Machines Corporation Graphene/nanostructure FET with self-aligned contact and gate
US8872176B2 (en) 2010-10-06 2014-10-28 Formfactor, Inc. Elastic encapsulated carbon nanotube based electrical contacts
US9273004B2 (en) 2011-09-29 2016-03-01 International Business Machines Corporation Selective placement of carbon nanotubes via coulombic attraction of oppositely charged carbon nanotubes and self-assembled monolayers
US9442695B2 (en) 2014-05-02 2016-09-13 International Business Machines Corporation Random bit generator based on nanomaterials
US9720772B2 (en) * 2015-03-04 2017-08-01 Kabushiki Kaisha Toshiba Memory system, method for controlling magnetic memory, and device for controlling magnetic memory
CN107564946A (zh) * 2016-07-01 2018-01-09 清华大学 纳米晶体管
CN107564947A (zh) * 2016-07-01 2018-01-09 清华大学 纳米异质结构
CN107564917B (zh) * 2016-07-01 2020-06-09 清华大学 纳米异质结构
CN107564910B (zh) * 2016-07-01 2020-08-11 清华大学 半导体器件
EP3820880A4 (en) * 2018-07-11 2022-03-23 The Regents Of The University Of California Nucleic acid-based electrically readable, read-only memory

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2264928T3 (es) 1999-02-12 2007-02-01 Board Of Trustees Operating Michigan State University Nanocapsulas que contienen particulas cargadas, sus usos y procedimientos de preparacion de las mismas.
US6256767B1 (en) * 1999-03-29 2001-07-03 Hewlett-Packard Company Demultiplexer for a molecular wire crossbar network (MWCN DEMUX)
US6128214A (en) * 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6314019B1 (en) * 1999-03-29 2001-11-06 Hewlett-Packard Company Molecular-wire crossbar interconnect (MWCI) for signal routing and communications
US6383784B1 (en) 1999-12-03 2002-05-07 City Of Hope Construction of nucleoprotein based assemblies comprising addressable components for nanoscale assembly and nanoprocessors
WO2002003482A1 (de) * 2000-07-04 2002-01-10 Infineon Technologies Ag Feldeffekttransistor
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
WO2002103753A2 (en) 2000-11-01 2002-12-27 Myrick James J Nanoelectronic interconnection and addressing
CN1306619C (zh) * 2001-03-30 2007-03-21 加利福尼亚大学董事会 纳米线以及由其制造的器件
AU2002307129A1 (en) * 2001-04-03 2002-10-21 Carnegie Mellon University Electronic circuit device, system and method
US6385075B1 (en) * 2001-06-05 2002-05-07 Hewlett-Packard Company Parallel access of cross-point diode memory arrays
US6706402B2 (en) * 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US7073157B2 (en) * 2002-01-18 2006-07-04 California Institute Of Technology Array-based architecture for molecular electronics
US6760245B2 (en) * 2002-05-01 2004-07-06 Hewlett-Packard Development Company, L.P. Molecular wire crossbar flash memory
EP1525586B1 (en) * 2002-07-25 2007-04-25 California Institute of Technology Sublithographic nanoscale memory architecture
US6682951B1 (en) * 2002-09-26 2004-01-27 International Business Machines Corporation Arrangements of microscopic particles for performing logic computations, and method of use

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